Canal N - PSMN050-80PS

PSMN050-80PS
B
0A
-22
TO
N-channel 80 V 46 mΩ standard level MOSFET

Rev. 2 — 28 November 2011 Product data sheet
1. Product profile
1.1 General description

Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits

 High efficiency due to low switching  Suitable for standard level gate drive
and conduction losses sources
1.3 Applications
 DC-to-DC converters  Motor control
 Load switching  Server power supplies
1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 80 V
ID drain current Tmb = 25 °C; VGS = 10 V; see Figure 1 - - 22 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 56 W
Static characteristics
RDSon drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C [1] - 37 46 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 40 V; - 2.3 - nC
see Figure 14; see Figure 15
[1] Measured 3 mm from package.

NXP Semiconductors PSMN050-80PS
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to drain
mbb076 S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PSMN050-80PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78
hole; 3-lead TO-220AB
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 80 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 80 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tmb = 100 °C; see Figure 1 - 16 A
VGS = 10 V; Tmb = 25 °C; see Figure 1 - 22 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; see Figure 3 - 88 A
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - 56 W
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C - 22 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 88 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 22 A; - 18 mJ
avalanche energy Vsup ≤ 80 V; RGS = 50 Ω; unclamped
PSMN050-80PS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 28 November 2011 2 of 14

003aad056 03aa16
30 120
ID Pder
(A) (%)
20 80
10 40
0 0
0 50 100 150 200 0 50 100 150 200
Tmb (°C) Tmb (°C)
Fig 1. Continuous drain current as a function of Fig 2. Normalized total power dissipation as a
mounting base temperature function of mounting base temperature
003aad301
103
ID
(A)
102 Limit RDSon = VDS / ID 10 μs
10
100 μs
1
DC
1 ms
10-1 10 ms
100 ms
10-2
1 10 102 VDS (V) 103
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 - 2.2 2.7 K/W
003aad055
10
Zth(j-mb) δ = 0.5
(K/W)
1
0.2
0.1
0.05
10-1 0.02
10-2 tp
P δ=
T
single shot
-3
10
tp t
T
10-4
10-6 10-5 10-4 10-3 10-2 10-1 tp (s) 1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics
Table 6. Characteristics
Tested to JEDEC standards where applicable.
Static characteristics
V(BR)DSS drain-source breakdown ID = 250 µA; VGS = 0 V; Tj = -55 °C 73 - - V
voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 80 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 4.6 V
ID = 1 mA; VDS = VGS; Tj = 25 °C; 2 3 4 V
IDSS drain leakage current VDS = 80 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VDS = 80 V; VGS = 0 V; Tj = 125 °C - - 15 µA
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 10 A; Tj = 100 °C; - - 74 mΩ
resistance see Figure 13
VGS = 10 V; ID = 10 A; Tj = 25 °C [1] - 37 46 mΩ
RG internal gate resistance (AC) f = 1 MHz - 2 - Ω
Dynamic characteristics
QG(tot) total gate charge ID = 0 A; VDS = 0 V; VGS = 10 V - 9 - nC
ID = 25 A; VDS = 40 V; VGS = 10 V; - 11 - nC
QGS gate-source charge see Figure 14; see Figure 15 - 3.8 - nC
QGS(th) pre-threshold gate-source ID = 25 A; VDS = 40 V; VGS = 10 V; - 1.9 - nC
charge see Figure 14
QGS(th-pl) post-threshold gate-source - 1.9 - nC
charge
QGD gate-drain charge ID = 25 A; VDS = 40 V; VGS = 10 V; - 2.3 - nC
VGS(pl) gate-source plateau voltage VDS = 40 V - 5.2 - V
Ciss input capacitance VDS = 12 V; VGS = 0 V; f = 1 MHz; - 633 - pF
Coss output capacitance Tj = 25 °C; see Figure 17 - 100 - pF
Crss reverse transfer capacitance - 50 - pF
td(on) turn-on delay time VDS = 12 V; RL = 0.5 Ω; VGS = 10 V; - 9.2 - ns
tr rise time RG(ext) = 4.7 Ω - 1 - ns
td(off) turn-off delay time - 16 - ns
tf fall time - 2.4 - ns

Table 6. Characteristics …continued

Tested to JEDEC standards where applicable.
Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; - 0.86 1.2 V
Tj = 25 °C;
see Figure 16
trr reverse recovery time IS = 50 A; dIS/dt = 100 A/µs; - 32 - ns
Qr recovered charge VGS = 0 V; VDS = 40 V - 28 - nC
[1] Measured 3 mm from package.
003aad046 003aad047
40 100
20 10 VGS (V) = 5 5.5
ID 8 RDSon
5.5
(A) 6 (mΩ) 6
30 80
8
5
10
20 60
20
VGS (V) = 4.5

10 40
0 20
0 2 4 6 8 10 0 10 20 30 ID (A) 40
VDS (V)
Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of drain current; typical values

003aad052 003aad053
1000 35
gfs
C
Ciss (S)
(pF) 30
800
25
600
20
Crss
15
400
10
200
5
0 0
2 4 6 8 10 0 10 20 30 40 I (A) 50
VGS (V) D
Fig 7. Input and reverse transfer capacitances as a Fig 8. Forward transconductance as a function of
function of gate-source voltage; typical values drain current; typical values
003aad054 003aad048
100 40
RDSon ID
(mΩ) (A)
80 30
60 20
40 10 Tj = 175 °C 25 °C
20 0
0 5 10 15 VGS (V) 20 0 2 4 6 V (V) 8
GS
Fig 9. Drain-source on-state resistance as a function Fig 10. Transfer characteristics: drain current as a
of gate-source voltage; typical values function of gate-source voltage; typical values

03aa35 003aad280
10−1 5
ID VGS(th)
(A) (V)
min typ max
10−2 4
max
10−3 3
typ
10−4 2 min
10−5 1
10−6 0
0 2 4 6 −60 0 60 120 180
VGS (V) Tj (°C)
Fig 11. Sub-threshold drain current as a function of Fig 12. Gate-source threshold voltage as a function of
gate-source voltage junction temperature
003aad045
2.5
VDS
a
2.0 ID
VGS(pl)
1.5
VGS(th)
1.0 VGS
QGS1 QGS2
QGS QGD
0.5
QG(tot)
003aaa508
0.0
-60 -30 0 30 60 90 120 150 180
Tj (°C)
Fig 13. Normalized drain-source on-state resistance Fig 14. Gate charge waveform definitions
factor as a function of junction temperature

003aad050 003aad049
10 100
VGS IS
(V) VDS = 40 V (A)
8 80
6 60
4 40
175 °C
Tj = 25 °C
2 20
0 0
0 5 10 QG (nC) 15 0 0.5 1 VSD (V) 1.5
Fig 15. Gate-source voltage as a function of gate Fig 16. Source (diode forward) current as a function of
charge; typical values source-drain (diode forward) voltage; typical
values
003aad051
103
Ciss
C
(pF)
102
Coss
Crss
10
10-1 1 10 102
VDS (V)
Fig 17. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Canal N - PSMN050-80PS

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PSMN050-80PS

N-channel 80 V 46 mΩ standard level MOSFET

1.1 General description

1.2 Features and benefits

1.4 Quick reference data

[1] Measured 3 mm from package.

Product data sheet Rev. 2 — 28 November 2011 2 of 14

Product data sheet Rev. 2 — 28 November 2011 3 of 14

Product data sheet Rev. 2 — 28 November 2011 4 of 14

Product data sheet Rev. 2 — 28 November 2011 5 of 14

Table 6. Characteristics …continued

[1] Measured 3 mm from package.

VGS (V) = 4.5

Product data sheet Rev. 2 — 28 November 2011 6 of 14

Product data sheet Rev. 2 — 28 November 2011 7 of 14

Product data sheet Rev. 2 — 28 November 2011 8 of 14

Product data sheet Rev. 2 — 28 November 2011 9 of 14

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