Pmv65Xp: 1. General Description

PMV65XP
3
T2
SO
20 V, single P-channel Trench MOSFET
12 February 2013 Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits

• Low threshold voltage
• Low on-state resistance
• Trench MOSFET technology
3. Applications
• Low power DC-to-DC converters
• Load switching
• Battery management
• Battery powered portable equipment
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - -20 V
VGS gate-source voltage -12 - 12 V
ID drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ
resistance
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NXP Semiconductors PMV65XP
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D
2 S source
G
3 D drain 1 2
TO-236AB (SOT23) S
017aaa257
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PMV65XP TO-236AB plastic surface-mounted package; 3 leads SOT23
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
PMV65XP %M9
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - -20 V
VGS gate-source voltage -12 12 V
ID drain current VGS = -4.5 V; Tsp = 25 °C - -4.3 A
VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A
VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -16 A
Ptot total power dissipation Tamb = 25 °C [2] - 480 mW

[1] - 833 mW
Tsp = 25 °C - 4165 mW
PMV65XP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved
Product data sheet 12 February 2013 2 / 14

Symbol Parameter Conditions Min Max Unit

Tj junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
IS source current Tsp = 25 °C - -1.6 A
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123 017aaa124
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
- 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175
Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of junction temperature function of junction temperature

017aaa838
-102
ID Limit RDSon = VDS/ID

(A)
-10
tp = 1 ms
-1
tp = 10 ms
DC; Tsp = 25 °C
-10-1 tp = 100 ms
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
-10-2
-10-1 -1 -10 -102
VDS (V)
IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance in free air [1] - 230 260 K/W
from junction to [2] - 125 150 K/W
ambient
Rth(j-sp) thermal resistance - 25 30 K/W
from junction to solder
point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm .
2

017aaa839
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
0.5
102
0.33
0.25
0.2
0.1
0.05
10
0.02
0
0.01
1
10-3 10-2 10-1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa840
103
Zth(j-a)
(K/W)
duty cycle = 1
102 0.75
0.5
0.33 0.25
0.2
0.1
0.05
10
0 0.02
0.01
1
10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for drain 6 cm
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = -250 µA; VGS = 0 V; Tj = 25 °C -20 - - V
breakdown voltage
VGSth gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C -0.47 -0.65 -0.9 V
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C - - -1 µA
VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA



IGSS gate leakage current VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA
VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ

resistance
VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C - 82 105 mΩ
VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 67 92 mΩ
VGS = -1.8 V; ID = -1 A; Tj = 25 °C - 87 135 mΩ
gfs forward VDS = -10 V; ID = -2.8 A; Tj = 25 °C - 15 - S

transconductance
Dynamic characteristics
QG(tot) total gate charge VDS = -6 V; ID = -2.8 A; VGS = -4.5 V; - 7.7 - nC
QGS gate-source charge Tj = 25 °C - 1 - nC
QGD gate-drain charge - 1.65 - nC
Ciss input capacitance VDS = -20 V; f = 1 MHz; VGS = 0 V; - 744 - pF
Coss output capacitance Tj = 25 °C - 65 - pF
Crss reverse transfer - 53 - pF

capacitance
td(on) turn-on delay time VDS = -6 V; VGS = -4.5 V; RG(ext) = 6 Ω; - 7 - ns
tr rise time Tj = 25 °C; ID = -1 A - 18 - ns
td(off) turn-off delay time - 135 - ns
tf fall time - 68 - ns
Source-drain diode
VSD source-drain voltage IS = -0.9 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V
017aaa841 017aaa850
-12 10-3
-4.5 V VGS = -1.8 V
ID -2.5 V
(A) ID
-2 V
(A)
-1.7 V
-9
10-4
-1.6 V
min typ max
-6 -1.5 V
10-5
-3 -1.3 V
0 10-6
0 -1.25 -2.50 -3.75 -5.00 0 0.2 0.4 0.6 0.8 1.0
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; VDS = -5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage

017aaa842 017aaa843
300 300
RDSon -1.4 V -1.5 V -1.6 V -1.7 V -1.8 V RDSon

(mΩ) (mΩ)
200 200
-2 V
100 100 Tj = 150 °C
-2.5 V
VGS = -4.5 V Tj = 25 °C
0 0
0 -5 -10 -15 0 -2 -4 -6 -8
ID (A) VGS (V)
Tj = 25 °C ID = -2.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
017aaa844 017aaa845
-12 2.0
ID a
(A)
-9 1.5
-6 1.0
-3 0.5
Tj = 150 °C Tj = 25 °C
0 0
0 -0.5 -1.0 -1.5 -2.0 -60 0 60 120 180
VGS (V) Tj (°C)
VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance

Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical
function of gate-source voltage; typical values values

017aaa846 017aaa847
-2.0 103
Ciss
VGS(th)
(V)
C
-1.5 (pF)
-1.0 102
max Coss
Crss
typ
-0.5
min
0 10
-60 0 60 120 180 -10-1 -1 -10 -102
Tj (°C) VDS (V)
ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical
values
017aaa848
-5
VDS
VGS
(V)
-4 ID
VGS(pl)
-3
VGS(th)
-2 VGS
QGS1 QGS2
QGS QGD
-1
QG(tot)
017aaa137
0
0 2.5 5.0 7.5 10.0 Fig. 15. Gate charge waveform definitions
QG (nC)
ID = -2.8 A; VDS = -6 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate
charge; typical values

017aaa849
-12
IS
(A)
-9
-6
Tj = 150 °C Tj = 25 °C
-3
0
0 -0.5 -1.0 -1.5
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test information
P t1
duty cycle δ =
t2 t2
t1
t
006aaa812
Fig. 17. Duty cycle definition

12. Package outline
3.0 1.1
2.8 0.9
0.45
0.15
2.5 1.4
2.1 1.2
1 2
0.48 0.15
0.38 0.09
1.9
Dimensions in mm 04-11-04
Fig. 18. Package outline TO-236AB (SOT23)
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
3 1.7 2
solder paste
0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1 sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6 2.6 solder resist
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMV65XP v.2 20130212 Product data sheet - PMV65XP v.1
Modifications: • Pinning information corrected
PMV65XP v.1 20120921 Product data sheet - -

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -
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whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
Document Product Definition customer for the products described herein shall be limited in accordance
status [1][2] status [3] with the Terms and conditions of commercial sale of NXP Semiconductors.
Objective Development This document contains data from Right to make changes — NXP Semiconductors reserves the right to
[short] data the objective specification for product make changes to information published in this document, including without
sheet development. limitation specifications and product descriptions, at any time and without
Preliminary Qualification This document contains data from the notice. This document supersedes and replaces all information supplied prior
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Product Production This document contains the product authorized or warranted to be suitable for use in life support, life-critical or
[short] data specification. safety-critical systems or equipment, nor in applications where failure or
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to result in personal injury, death or severe property or environmental
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completing a design. inclusion and/or use of NXP Semiconductors products in such equipment or
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changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on Quick reference data — The Quick reference data is an extract of the
the Internet at URL http://www.nxp.com. product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these

15.2 Definitions products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
Preview — The document is a preview version only. The document is still specified use without further testing or modification.
subject to formal approval, which may result in modifications or additions.
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data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
NXP Semiconductors and its customer, unless NXP Semiconductors and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the NXP Semiconductors product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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Notice: All referenced brands, product names, service names and
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HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................4
10 Characteristics ....................................................... 5
11 Test information ..................................................... 9
12 Package outline ................................................... 10
13 Soldering .............................................................. 10
14 Revision history ................................................... 11
15 Legal information .................................................12
15.1 Data sheet status ............................................... 12
15.2 Definitions ...........................................................12
15.3 Disclaimers .........................................................12
15.4 Trademarks ........................................................ 13
© NXP B.V. 2013. All rights reserved

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 February 2013

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2. Features and benefits

4. Quick reference data

VGS gate-source voltage -12 - 12 V

ID drain current VGS = -4.5 V; Tsp = 25 °C - - -4.3 A

[1] % = placeholder for manufacturing site code

VGS gate-source voltage -12 12 V

ID drain current VGS = -4.5 V; Tsp = 25 °C - -4.3 A

VGS = -4.5 V; Tamb = 25 °C [1] - -2.8 A

VGS = -4.5 V; Tamb = 100 °C [1] - -1.8 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -16 A

Ptot total power dissipation Tamb = 25 °C [2] - 480 mW

Product data sheet 12 February 2013 2 / 14

Symbol Parameter Conditions Min Max Unit

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Product data sheet 12 February 2013 3 / 14

ID Limit RDSon = VDS/ID

IDM = single pulse

Product data sheet 12 February 2013 4 / 14

FR4 PCB, standard footprint

VDS = -20 V; VGS = 0 V; Tj = 150 °C - - -100 µA

Product data sheet 12 February 2013 5 / 14

Symbol Parameter Conditions Min Typ Max Unit

VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA

RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 58 74 mΩ

VGS = -2.5 V; ID = -2.3 A; Tj = 25 °C - 67 92 mΩ

VGS = -1.8 V; ID = -1 A; Tj = 25 °C - 87 135 mΩ

gfs forward VDS = -10 V; ID = -2.8 A; Tj = 25 °C - 15 - S

QGS gate-source charge Tj = 25 °C - 1 - nC

QGD gate-drain charge - 1.65 - nC

Ciss input capacitance VDS = -20 V; f = 1 MHz; VGS = 0 V; - 744 - pF

Coss output capacitance Tj = 25 °C - 65 - pF

Crss reverse transfer - 53 - pF

tr rise time Tj = 25 °C; ID = -1 A - 18 - ns

td(off) turn-off delay time - 135 - ns

Product data sheet 12 February 2013 6 / 14

RDSon -1.4 V -1.5 V -1.6 V -1.7 V -1.8 V RDSon

VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance

Product data sheet 12 February 2013 7 / 14

ID = -0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V

ID = -2.8 A; VDS = -6 V; Tamb = 25 °C

Product data sheet 12 February 2013 8 / 14

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 12 February 2013 9 / 14

12. Package outline

Fig. 18. Package outline TO-236AB (SOT23)

0.7 0.6 occupied area

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)

Product data sheet 12 February 2013 10 / 14

4.6 2.6 solder resist

preferred transport direction during soldering

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

14. Revision history

Product data sheet 12 February 2013 11 / 14

In no event shall NXP Semiconductors be liable for any indirect, incidental,

Applications — Applications that are described herein for any of these

Terms and conditions of commercial sale — NXP Semiconductors

Product data sheet 12 February 2013 12 / 14

grant, conveyance or implication of any license under any copyrights, patents

Export control — This document as well as the item(s) described herein

Non-automotive qualified products — Unless this data sheet expressly