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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
BUK9E06-55A
N-channel TrenchMOS logic level FET
Rev. 04 — 31 May 2010 Product data sheet
1. Product profile
1.3 Applications
12 V and 24 V loads Motors, lamps and solenoids
Automotive and general purpose
power switching
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
mb D
2 D drain
3 S source
G
mb D mounting base; connected to
drain mbb076 S
1 2 3
SOT226 (I2PAK)
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK9E06-55A I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V
VDGR drain-gate voltage RGS = 20 kΩ - - 55 V
VGS gate-source voltage -15 - 15 V
ID drain current VGS = 5 V; Tj = 25 °C; [1] - - 154 A
see Figure 3; see Figure 1 [2] - - 75 A
VGS = 5 V; Tj = 100 °C; see Figure 1 [2] - - 75 A
IDM peak drain current Tmb = 25 °C; tp ≤ 10 µs; pulsed; - - 616 A
see Figure 3
Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 300 W
Tstg storage temperature -55 - 175 °C
Tj junction temperature -55 - 175 °C
Source-drain diode
IS source current Tmb = 25 °C [1] - - 154 A
[2] - - 75 A
ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - - 616 A
Avalanche ruggedness
EDS(AL)S non-repetitive ID = 75 A; Vsup ≤ 55 V; RGS = 50 Ω; - - 1.1 J
drain-source VGS = 5 V; Tj(init) = 25 °C; unclamped
avalanche energy
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
03ne93 03na19
200 120
ID
(A) Pder
(%)
150
80
100
40
50 Capped at 75 A due to package
0 0
25 50 75 100 125 150 175 200 0 50 100 150 200
Tmb (°C) Tmb (°C)
Fig 1. Normalized continuous drain current as a Fig 2. Normalized total power dissipation as a
function of mounting base temperature function of mounting base temperature
03nf02
103
RDSon = VDS/ID
ID
(A) tp = 10 μs
102 100 μs
D.C.
tp 10 ms
10 P δ=
T
100 ms
tp t
T
1
1 10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance see Figure 4 - - 0.5 K/W
from junction to
mounting base
Rth(j-a) thermal resistance vertical in still air - 60 - K/W
from junction to
ambient
03nf03
1
Zth(j-mb)
(K/W) δ = 0.5
10−1 0.2
0.1
0.05
0.02 tp
10−2 P δ=
T
single shot
tp t
T
10−3
10−6 10−5 10−4 10−3 10−2 10−1 1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - V
breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V
VGS(th) gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C; 1 1.5 2 V
voltage see Figure 11
ID = 1 mA; VDS = VGS; Tj = -55 °C; - - 2.3 V
see Figure 11
ID = 1 mA; VDS = VGS; Tj = 175 °C; 0.5 - - V
see Figure 11
IDSS drain leakage current VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µA
VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
IGSS gate leakage current VDS = 0 V; VGS = 10 V; Tj = 25 °C - 2 100 nA
VDS = 0 V; VGS = -10 V; Tj = 25 °C - 2 100 nA
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
03ne99 03ne98
400 8
ID 10 6 5
(A) 7 RDSon
350
(mΩ)
300 7
VGS (V) = 4
250
200 6
150
100 3 5
50
2.4
0 4
0 2 4 6 8 10 2 4 6 8 10
VDS (V) VGS (V)
Fig 5. Output characteristics: drain current as a Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values
03aa36 03ne96
10-1 140
gfs
ID
(S)
(A) 120
10-2
100
10-3
80
min typ max
60
10-4
40
10-5
20
10-6 0
0 1 2 3 0 20 40 60 80 100
VGS (V) ID (A)
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
03ne97 03ne95
100 5
ID VGS
(A) (V)
80 4
VDD = 14 V VDD = 44 V
60 3
40 2
20 1
Tj = 175 °C Tj = 25 °C
0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120
VGS (V) QG (nC)
Fig 9. Transfer characteristics: drain current as a Fig 10. Gate-source voltage as a function of gate
function of gate-source voltage; typical values charge; typical values
03aa33 03nf00
2.5 8
VGS(th)
RDSon
(V)
(mΩ)
2 max VGS (V) = 3
7
3.2
1.5 typ 3.4
3.6
6
4
1 min
5
5
0.5
0 4
-60 0 60 120 180 0 20 40 60 80 100
Tj (°C) ID (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature of drain current; typical values
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
03ne89 03nf01
2 18000
C (pF)
a 16000 Ciss
14000
1.5
12000 Coss
10000
1
Crss
8000
6000
0.5
4000
2000
0 0
-60 0 60 120 180 10−2 10−1 1 10 102
Tj (°C) VDS (V)
Fig 13. Normalized drain-source on-state resistance Fig 14. Input, output and reverse transfer capacitances
factor as a function of junction temperature as a function of drain-source voltage; typical
values
03ne94
100
IS
(A)
80
60
40
20
Tj = 175 °C Tj = 25 °C
0
0 0.2 0.4 0.6 0.8 1.0
VSD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
7. Package outline
A
D1 E A1
mounting
base
D
L1
Q
b1
L
1 2 3
b c
e e
0 5 10 mm
scale
UNIT A A1 b b1 c D D1 E e L L1 Q
max
4.5 1.40 0.85 1.3 0.7 1.6 10.3 15.0 3.30 2.6
mm 11 2.54
4.1 1.27 0.60 1.0 0.4 1.2 9.7 13.5 2.79 2.2
06-02-14
SOT226 TO-262
09-08-25
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
8. Revision history
Table 7. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BUK9E06-55A v.4 20100531 Product data sheet - BUK9506_9606_9E06_55A-03
Modifications: • The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number BUK9E06-55A separated from data sheet
BUK9506_9606_9E06_55A-03.
BUK9506_9606_9E06_55A-03 20010723 Product data sheet - -
(9397 750 08416)
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
9. Legal information
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Right to make changes — NXP Semiconductors reserves the right to make No offer to sell or license — Nothing in this document may be interpreted or
changes to information published in this document, including without construed as an offer to sell products that is open for acceptance or the grant,
limitation specifications and product descriptions, at any time and without conveyance or implication of any license under any copyrights, patents or
notice. This document supersedes and replaces all information supplied prior other industrial or intellectual property rights.
to the publication hereof.
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Export control — This document as well as the item(s) described herein may Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
be subject to export control regulations. Export might require a prior FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
authorization from national authorities. ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
9.4 Trademarks
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Notice: All referenced brands, product names, service names and trademarks Corporation.
are the property of their respective owners.
BUK9E06-55A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
11. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .5
7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
9.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
10 Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.