BUK7J1R4-40H: 1. General Description

BUK7J1R4-40H
N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

5 July 2018 Product data sheet
1. General description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in an enhanced LFPAK56E package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features and benefits

• Fully automotive qualified to AEC-Q101:
• 175 °C rating suitable for thermally demanding environments
• Trench 9 Superjunction technology:
• Reduced cell pitch enables enhanced power density and efficiency with lower RDSon in
same footprint
• Improved SOA and avalanche capability compared to standard TrenchMOS
• Tight VGS(th) limits enable easy paralleling of MOSFETs
• LFPAK Gull Wing leads:
• High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
• Visual (AOI) soldering inspection, no need for expensive x-ray equipment
• Easy solder wetting for good mechanical solder joint
• LFPAK copper clip technology:
• Improved reliability, with reduced Rth and RDSon
• Increases maximum current capability and improved current spreading
3. Applications
• 12 V automotive systems
• Motors, lamps and solenoid control
• Start-Stop micro-hybrid applications
• Transmission control
• Ultra high performance power switching
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V
ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - - 190 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 395 W
Nexperia BUK7J1R4-40H

Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.74 1.06 1.4 mΩ
resistance Fig. 11
Dynamic characteristics
QGD gate-drain charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 13 27 nC
Fig. 13; Fig. 14
Source-drain diode
Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 39 - nC
VDS = 20 V
S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 0.7 -
VDS = 20 V; Tj = 25 °C
[1] 190A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 S source D
2 S source
G
3 S source
4 G gate mbb076 S
mb D mounting base; connected to

drain
1 2 3 4
LFPAK56E; Power-
SO8 (SOT1023)
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK7J1R4-40H LFPAK56E; plastic, single-ended surface-mounted package (LFPAK56); 4 SOT1023
Power-SO8 leads; 1.27 mm pitch
7. Marking
Table 4. Marking codes
Type number Marking code
BUK7J1R4-40H 71H440
BUK7J1R4-40H All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2018. All rights reserved
Product data sheet 5 July 2018 2 / 12

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V
VGS gate-source voltage DC; Tj ≤ 175 °C -10 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 395 W
ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 190 A
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 190 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 600 A
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
Source-drain diode
IS source current Tmb = 25 °C [2] - 145 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 600 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain- ID = 190 A; Vsup ≤ 40 V; RGS = 50 Ω; [3] [4] - 154 mJ
source avalanche VGS = 10 V; Tj(init) = 25 °C; unclamped;
energy Fig. 4
[3] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer to application note AN10273 for further information.

03na19 aaa-025649
120 400
ID
(A)
Pder
(%)
300
80
200
(1)
40
100
0 0
0 50 100 150 200 0 25 50 75 100 125 150 175 200
Tmb (°C) Tmb (°C)
VGS ≥ 10 V
(1) 190A continuous current has been successfully
demonstrated during application tests. Practically
Fig. 1. Normalized total power dissipation as a the current will be limited by PCB, thermal design
function of mounting base temperature and operating temperature.
Fig. 2. Continuous drain current as a function of
mounting base temperature
aaa-026108
103
ID tp = 10 us
Limit RDSon = VDS / ID
(A)
102 100 us
DC
10
1 ms
10 ms
1
100 ms
10-1
10-1 1 10 102
VDS (V)
Tmb = 25 °C; IDM is a single pulse

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

aaa-025650
103
IAL
(A)
102
(1)
(2)
10
(3)
10-1
10-3 10-2 10-1 1 10
tAL (ms)
(1) Tj (init) = 25 °C; (2) Tj (init) = 150 °C; (3) Repetitive Avalanche
Fig. 4. Avalanche rating; avalanche current as a function of avalanche time
9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-mb) thermal resistance Fig. 5 - 0.29 0.38 K/W
from junction to
mounting base
aaa-026110
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1
0.2
0.1
0.05
tp
10-2 P δ=
0.02 T
single shot
tp t
T
10-3
10-6 10-5 10-4 10-3 10-2 10-1 1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 42 - V
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -40 °C - 39.6 - V
ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 38.9 - V
VGS(th) gate-source threshold ID = 1 mA; VDS=VGS; Tj = 25 °C; Fig. 9; 2.4 3 3.6 V
voltage Fig. 10
ID = 1 mA; VDS=VGS; Tj = -55 °C; Fig. 9 - - 4.3 V
ID = 1 mA; VDS=VGS; Tj = 175 °C; Fig. 9 1 - - V
IDSS drain leakage current VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.1 1 µA
VDS = 16 V; VGS = 0 V; Tj = 125 °C - 2.4 10 µA
VDS = 40 V; VGS = 0 V; Tj = 175 °C - 240 500 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; 0.74 1.06 1.4 mΩ
resistance Fig. 11
VGS = 10 V; ID = 25 A; Tj = 105 °C; 1.05 1.57 2.23 mΩ
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 125 °C; 1.16 1.74 2.45 mΩ
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 °C; 1.46 2.18 3.05 mΩ
Fig. 12
RG gate resistance f = 1 MHz; Tj = 25 °C 0.4 1 2.5 Ω
Dynamic characteristics
QG(tot) total gate charge ID = 25 A; VDS = 32 V; VGS = 10 V; - 73 103 nC
Fig. 13; Fig. 14
QGS gate-source charge - 21 32 nC
QGD gate-drain charge - 13 27 nC
Ciss input capacitance VDS = 25 V; VGS = 0 V; f = 1 MHz; - 5436 7610 pF
Tj = 25 °C; Fig. 15
Coss output capacitance - 1314 1840 pF
Crss reverse transfer - 238 524 pF
capacitance
td(on) turn-on delay time VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; - 19 - ns
RG(ext) = 5 Ω
tr rise time - 17 - ns
td(off) turn-off delay time - 43 - ns
tf fall time - 21 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16 - 0.8 1.2 V


trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 37 - ns
VDS = 20 V
Qr recovered charge - 39 - nC
S softness factor IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 0.7 -
VDS = 20 V; Tj = 25 °C
IS = 25 A; dIS/dt = -500 A/µs; VGS = 0 V; - 0.56 -
VDS = 20 V; Tj = 25 °C
aaa-026805 aaa-026112
300 5
ID 10 V RDSon
(A) (mΩ)
VGS = 5.5 V
240 4
5V
180 3
120 2
4.5 V
60 1
4V
0 0
0 1 2 3 4 0 4 8 12 16 20
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; ID = 25 A
Fig. 6. Output characteristics; drain current as a Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values of gate-source voltage; typical values
aaa-026113 aaa-018139
360 5
ID VGS(th)
(A) (V)
300
4
Max
240
3 Typ
180
2
120 Min
25°C 1
60
175°C
Tj = -55°C
0 0
0 1 2 3 4 5 6 7 -60 -30 0 30 60 90 120 150 180
VGS (V) Tj (°C)
VDS = 8 V ID = 1 mA ; VDS = VGS

Fig. 8. Transfer characteristics; drain current as a Fig. 9. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values junction temperature

aaa-018138 aaa-026114
10-1 10
ID RDSon
(A) (mΩ) VGS = 4.5 V 5V
10-2 8
Min Typ Max

10-3 6
5.5 V
10-4 4
6V
10-5 2
8V
10 V
10-6 0
0 1 2 3 4 5 0 50 100 150 200 250 300
VGS (V) ID (A)
Tj = 25 °C; VDS = 5V Tj = 25 °C
Fig. 10. Sub-threshold drain current as a function of Fig. 11. Drain-source on-state resistance as a function
gate-source voltage of drain current; typical values
aaa-026897 aaa-026115
2.4 10
a VGS
(V)
2
8
1.6
6
1.2 VDS = 14 V
32 V
4
0.8
2
0.4
0 0
-60 -30 0 30 60 90 120 150 180 0 10 20 30 40 50 60 70 80
Tj (°C) QG (nC)
Tj = 25 °C; ID = 25 A
Fig. 13. Gate-source voltage as a function of gate
Fig. 12. Normalized drain-source on-state resistance charge; typical values
factor as a function of junction temperature

aaa-026116
104
VDS C
(pF) Ciss
ID
Coss
VGS(pl) 103
VGS(th) Crss
VGS
QGS2 102
QGS1
QGS QGD
QG(tot)
003aaa508
Fig. 14. Gate charge waveform definitions 10

10-1 1 10 102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
aaa-026117
300
IS
(A)
240
180
120
60 175°C Tj = 25°C
0
0 0.2 0.4 0.6 0.8 1 1.2
VSD (V)
VGS = 0 V
Fig. 16. Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values

11. Package outline

Plastic single-ended surface-mounted package (LFPAK56E); 4 leads SOT1023
E A A E1
b2
b1 c1
(3x)
mounting
base D1
D
H
1 2 3 4 X
e b w A c
A1 C
Lp y C
detail X
0 2.5 5 mm
Dimensions scale
Unit A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) e H L Lp w y θ
max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30 3.7 6.2 1.3 0.85 8°
mm nom 0.85 1.27 0.25 0.1
min 0.95 0.00 0.35 3.62 0.19 0.24 4.45 4.95 3.5 5.9 0.8 0.40 0°
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included. sot1023_po
Outline References European

Issue date
version IEC JEDEC JEITA projection
13-03-05
SOT1023
17-07-31
Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)

Suitability for use in automotive applications — This Nexperia product

has been qualified for use in automotive applications. Unless otherwise
12. Legal information agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
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no liability for inclusion and/or use of Nexperia products in such equipment or
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Quick reference data — The Quick reference data is an extract of the
Objective [short] Development This document contains data from
product data given in the Limiting values and Characteristics sections of this
data sheet the objective specification for
document, and as such is not complete, exhaustive or legally binding.
product development.
Applications — Applications that are described herein for any of these
Preliminary [short] Qualification This document contains data from products are for illustrative purposes only. Nexperia makes no representation
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Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Package outline........................................................ 10
12. Legal information.......................................................11
© Nexperia B.V. 2018. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 5 July 2018

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BUK7J1R4-40H

N-channel 40 V, 1.4 mΩ standard level MOSFET in LFPAK56E

2. Features and benefits

4. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

mb D mounting base; connected to

Product data sheet 5 July 2018 2 / 12

Product data sheet 5 July 2018 3 / 12

Tmb = 25 °C; IDM is a single pulse

Product data sheet 5 July 2018 4 / 12

Product data sheet 5 July 2018 5 / 12

Product data sheet 5 July 2018 6 / 12

Symbol Parameter Conditions Min Typ Max Unit

VDS = 8 V ID = 1 mA ; VDS = VGS

Product data sheet 5 July 2018 7 / 12

Min Typ Max

Product data sheet 5 July 2018 8 / 12

Fig. 14. Gate charge waveform definitions 10

Product data sheet 5 July 2018 9 / 12

11. Package outline

Unit A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) e H L Lp w y θ

Outline References European

Fig. 17. Package outline LFPAK56E; Power-SO8 (SOT1023)

Product data sheet 5 July 2018 10 / 12

Suitability for use in automotive applications — This Nexperia product

Product data sheet 5 July 2018 11 / 12

© Nexperia B.V. 2018. All rights reserved

Product data sheet 5 July 2018 12 / 12

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