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PMV16XN

20 V, N-channel Trench MOSFET


11 November 2014 Product data sheet

1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

2. Features and benefits


• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• Enhanced power dissipation capability of 1200 mW

3. Applications
• LED driver
• Power management
• Low-side load switch
• Switching circuits

4. Quick reference data


Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 20 V

VGS gate-source voltage -12 - 12 V

ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 8.6 A

Static characteristics
RDSon drain-source on-state VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ
resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
Nexperia PMV16XN
20 V, N-channel Trench MOSFET

5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate 3 D

2 S source
G
3 D drain
S
1 2 017aaa253

TO-236AB (SOT23)

Table 3. Ordering information


Type number Package
Name Description Version
PMV16XN TO-236AB plastic surface-mounted package; 3 leads SOT23

6. Marking
Table 4. Marking codes
Type number Marking code
[1]

PMV16XN %BZ

[1] % = placeholder for manufacturing site code

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 2 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

7. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 20 V

VGS gate-source voltage -12 12 V

ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 8.6 A

VGS = 4.5 V; Tamb = 25 °C [1] - 6.8 A

VGS = 4.5 V; Tamb = 100 °C [1] - 4.3 A

IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 27 A

Ptot total power dissipation Tamb = 25 °C [2] - 510 mW


[1] - 1200 mW
Tsp = 25 °C - 6940 mW

Tj junction temperature -55 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

Source-drain diode
IS source current Tamb = 25 °C [1] - 1.2 A

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
2
for drain 6 cm .
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 3 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

017aaa123 017aaa124
120 120

Pder Ider
(%) (%)

80 80

40 40

0 0
- 75 - 25 25 75 125 175 - 75 - 25 25 75 125 175
Tj (°C) Tj (°C)

Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of junction temperature function of junction temperature

aaa-015214
102

lD
(A) tp = 10 µs

10 tp = 100 µs

tp = 1 ms
1
tp = 10 ms
DC; Tamb = 25 °C; 6 cm2
tp = 100 ms
10-1 DC; Tsp = 25 °C

10-2
10-1 1 10 102
VDS (V)

IDM = single pulse


Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage

8. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance in free air [1] - 208 245 K/W
from junction to [2] - 88 104 K/W
ambient
t≤5s [2] - 55 65 K/W

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 4 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

Symbol Parameter Conditions Min Typ Max Unit


Rth(j-sp) thermal resistance - 13 18 K/W
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
2

aaa-013409
103

Zth(j-a)
(K/W) duty cycle = 1
0.75
102 0.50
0.33
0.25
0.20
0.10
0.05
10
0.02

0.01
0

1
10-3 10-2 10-1 1 10 102 103
tp (s)

FR4 PCB, standard footprint


Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-013411
103
duty cycle = 1
Zth(j-a) 0.75
(K/W) 0.50
0.33
102

10

0.25
0.02 0.20
0.01 0.10
0 0.05
1
10-3 10-2 10-1 1 10 102 103
tp (s)
2
FR4 PCB, mounting pad for drain 6 cm
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 5 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

9. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 20 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C 0.4 0.65 0.9 V
voltage
IDSS drain leakage current VDS = 20 V; VGS = 0 V; Tj = 25 °C - - 1 µA

IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -100 nA

RDSon drain-source on-state VGS = 4.5 V; ID = 6.8 A; Tj = 25 °C - 16 20 mΩ


resistance
VGS = 4.5 V; ID = 6.8 A; Tj = 150 °C - 23 29 mΩ

VGS = 2.5 V; ID = 6.0 A; Tj = 25 °C - 18 24 mΩ

VGS = 1.8 V; ID = 2.1 A; Tj = 25 °C - 22 33 mΩ

gfs forward VDS = 10 V; ID = 2 A; Tj = 25 °C - 12 - S


transconductance
RG gate resistance f = 1 MHz - 2 - Ω

Dynamic characteristics
QG(tot) total gate charge VDS = 10 V; ID = 7.3 A; VGS = 4.5 V; - 13.4 20.2 nC

QGS gate-source charge Tj = 25 °C - 1.5 - nC

QGD gate-drain charge - 2.6 - nC

Ciss input capacitance VDS = 10 V; f = 1 MHz; VGS = 0 V; - 1240 - pF

Coss output capacitance Tj = 25 °C - 145 - pF

Crss reverse transfer - 125 - pF


capacitance
td(on) turn-on delay time VDS = 10 V; ID = 7.3 A; VGS = 4.5 V; - 9 - ns

tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 24 - ns

td(off) turn-off delay time - 31 - ns

tf fall time - 36 - ns

Source-drain diode
VSD source-drain voltage IS = 1.2 A; VGS = 0 V; Tj = 25 °C - 0.65 1.2 V

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 6 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

aaa-015610 017aaa796
28 10-2
ID 1.8 V
(A) ID
24 (A)
1.7 V
10-3
20 4.5 V
3.0 V
16 2.5 V min typ max
2.0 V 10-4
12 1.5 V

8
10-5

4 VGS = 1.3 V

0 10-6
0 1 2 3 4 5 0 0.4 0.8 1.2
VDS (V) VGS (V)

Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage
aaa-015611 aaa-015612
0.08 0.08

RDSon VGS = 1.4 V 1.5 V 1.6 V 1.7 V RDSon


(Ω) (Ω)

0.06 0.06

0.04 0.04
1.8 V

1.9 V Tj = 150 °C
0.02 0.02

2.0 V 2.6 V 4.5 V Tj = 25 °C


2.2 V 3.0 V
0 0
0 5 10 15 20 25 0 1 2 3 4 5
ID (A) VGS (V)

Tj = 25 °C ID = 6.8 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 7 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

aaa-015613 017aaa800
28 1.50
ID
(A) a
24

1.25
20

16
1.00
12
Tj = 150 °C
8
0.75

4
Tj = 25 °C
0 0.50
0 1 2 3 -60 0 60 120 180
VGS (V) Tj (°C)

VDS > ID × RDSon Fig. 11. Normalized drain-source on-state resistance


Fig. 10. Transfer characteristics: drain current as a as a function of junction temperature; typical
function of gate-source voltage; typical values values

017aaa801 017aaa802
1.5 104

VGS(th) C
(V) (pF)

Ciss
1.0 103

max

typ Coss
0.5 102 Crss

min

0 10
-75 -25 25 75 125 175 10-1 1 10 102
Tj (°C) VDS (V)

ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V


Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical
values

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 8 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

017aaa803
4.5
VDS

VGS
(V) ID

3.0 VGS(pl)

VGS(th)

VGS
1.5 QGS1 QGS2

QGS QGD
QG(tot)

003aaa508

0
0 5 10 15 Fig. 15. MOSFET transistor: Gate charge waveform
QG (nC) definitions
ID = 6 A; VDS = 10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-015614
5
Is
(A)
4

Tj = 150 °C
2

1
Tj = 25 °C

0
0 0.4 0.8 1.2
VSD (V)

VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values

10. Test information

P t1
duty cycle δ =
t2 t2

t1

t
006aaa812

Fig. 17. Duty cycle definition

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 9 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

11. Package outline


Plastic surface-mounted package; 3 leads SOT23

D B E A X

HE v A

A1

1 2 c

e1 bp w B Lp

e
detail X

0 1 2 mm

scale

Dimensions (mm are the original dimensions)

Unit A A1 bp c D E e e1 HE Lp Q v w

max 1.1 0.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55
mm nom 1.9 0.95 0.2 0.1
min 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45

sot023_po

Outline References European


Issue date
version IEC JEDEC JEITA projection
14-06-19
SOT23 TO-236AB 14-09-22

Fig. 18. Package outline TO-236AB (SOT23)

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 10 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

12. Soldering
3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area


(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot023_fr

Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)


2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig. 20. Wave soldering footprint for TO-236AB (SOT23)

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 11 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

13. Revision history


Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PMV16XN v.1 20141111 Product data sheet - -

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 12 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

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[short] data the objective specification for product make changes to information published in this document, including without
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Applications — Applications that are described herein for any of these


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data sheet shall define the specification of the product as agreed between the Absolute Maximum Ratings System of IEC 60134) will cause permanent
Nexperia and its customer, unless Nexperia and damage to the device. Limiting values are stress ratings only and (proper)
customer have explicitly agreed otherwise in writing. In no event however, operation of the device at these or any other conditions above those
shall an agreement be valid in which the Nexperia product given in the Recommended operating conditions section (if present) or the
is deemed to offer functions and qualities beyond those described in the Characteristics sections of this document is not warranted. Constant or
Product data sheet. repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

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PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 13 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

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14.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 14 / 15


Nexperia PMV16XN
20 V, N-channel Trench MOSFET

15. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Marking ................................................................... 2
7 Limiting values .......................................................3
8 Thermal characteristics .........................................4
9 Characteristics ....................................................... 6
10 Test information ..................................................... 9
11 Package outline ................................................... 10
12 Soldering .............................................................. 11
13 Revision history ................................................... 12
14 Legal information .................................................13
14.1 Data sheet status ............................................... 13
14.2 Definitions ...........................................................13
14.3 Disclaimers .........................................................13
14.4 Trademarks ........................................................ 14

© Nexperia B.V. 2017. All rights reserved


For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 11 November 2014

PMV16XN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved

Product data sheet 11 November 2014 15 / 15


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