BUK6D22-30E: 1. General Description

BUK6D22-30E
30 V, N-channel Trench MOSFET

10 April 2019 Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6
(SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits

• Extended temperature range Tj = 175 °C
• Side wettable flanks for optical solder inspection
• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)
• Trench MOSFET technology
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - 30 V
VGS gate-source voltage -20 - 20 V
ID drain current VGS = 10 V; Tsp = 25 °C - - 22 A
Ptot total power dissipation Tsp = 25 °C - - 19 W
Static characteristics
RDSon drain-source on-state VGS = 10 V; ID = 7.2 A; Tj = 25 °C - 16 22 mΩ
resistance
Nexperia BUK6D22-30E
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 D drain D
1 6
2 D drain 7
2 5
3 G gate
G
4 S source 3 8 4
5 D drain Transparent top view

6 D drain DFN2020MD‑6 (SOT1220) S
7 D drain 017aaa255
8 S source
6. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BUK6D22-30E DFN2020MD‑6 plastic, leadless thermal enhanced ultra thin small outline SOT1220
package; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm
body
7. Marking
Table 4. Marking codes
Type number Marking code
BUK6D22-30E 6A
BUK6D22-30E All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. All rights reserved
Product data sheet 10 April 2019 2 / 15

8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj = 25 °C - 30 V
VGS gate-source voltage -20 20 V
ID drain current VGS = 10 V; Tsp = 25 °C - 22 A
VGS = 10 V; Tsp = 100 °C - 15.7 A
VGS = 10 V; Tamb = 25 °C [1] - 7.2 A
IDM peak drain current Tsp = 25 °C; single pulse; tp ≤ 10 µs - 89 A
Ptot total power dissipation Tsp = 25 °C - 19 W
Tamb = 25 °C [1] - 2 W
Tj junction temperature -55 175 °C
Tamb ambient temperature -55 175 °C
Tstg storage temperature -65 175 °C
Source-drain diode
IS source current Tsp = 25 °C - 19 A
Tamb = 25 °C [1] - 2 A
ISM peak source current single pulse; tp ≤ 10 µs; Tsp = 25 °C - 75 A
ESD maximum rating
VESD electrostatic discharge HBM [2] - 2000 V
voltage
Avalanche ruggedness
EDS(AL)S non-repetitive drain- Tj(init) = 25 °C; ID = 1.17 A; DUT in - 17.4 mJ
source avalanche energy avalanche (unclamped)
2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .
[2] Measured between all pins.
aaa-026120 aaa-026121
120 120
Pder Ider
(%) (%)
80 80
40 40
0 0
-75 25 125 225 -75 25 125 225
Tj (°C) Tj (°C)
Fig. 1. Normalized total power dissipation as a Fig. 2. Normalized continuous drain current as a
function of junction temperature function of junction temperature

aaa-029872
102
ID
(A) Limit RDSon = VDS/ID
tp = 10 µs
10
100 µs
DC; Tsp = 25 °C
1
1 ms
10 ms
10-1 DC; Tamb = 25 °C; 6 cm2
100 ms
10-2
10-1 1 10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage

9. Thermal characteristics
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from in free air [1] - 66 76 K/W
junction to ambient
Rth(j-sp) thermal resistance from - 4 8 K/W
junction to solder point
2
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm .
aaa-029811
10
Zth(j-sp) duty cycle = 1

(K/W)
0.75
0.50
1 0.33
0.25
0.20
0.10
0.05
0.02
10-1 0.01 0
10-2
10-5 10-4 10-3 10-2
tp (s)
Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration; typical values
aaa-022660
103
Zth(j-a)
(K/W) duty cycle = 1
0.75
0.50
102
0.33
0.25
0.20
0.10
0.05
10 0.02
0.01
0
1
10-3 10-2 10-1 1 10 102 103
tp (s)
FR4 PCB, standard footprint

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
breakdown voltage
VGSth gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C 1 1.5 2.5 V
voltage
IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA
VDS = 30 V; VGS = 0 V; Tj = 125 °C - - 20 µA
IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -20 V; VDS = 0 V; Tj = 25 °C - - -10 µA
VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 2 µA
VGS = -10 V; VDS = 0 V; Tj = 25 °C - - -2 µA
RDSon drain-source on-state VGS = 10 V; ID = 7.2 A; Tj = 25 °C - 16 22 mΩ
resistance VGS = 10 V; ID = 7.2 A; Tj = 175 °C - 28 38 mΩ
VGS = 4.5 V; ID = 6.2 A; Tj = 25 °C - 22 30 mΩ
gfs forward VDS = 10 V; ID = 7.2 A; Tj = 25 °C - 24 - S
transconductance
RG gate resistance f = 1 MHz - 2 - Ω
Dynamic characteristics
QG(tot) total gate charge VDS = 15 V; ID = 7.2 A; VGS = 10 V; - 9.5 14 nC
QGS gate-source charge Tj = 25 °C - 1 - nC
QGD gate-drain charge - 2.2 - nC
Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 440 - pF
Coss output capacitance Tj = 25 °C - 110 - pF
Crss reverse transfer - 75 - pF
capacitance
td(on) turn-on delay time VDS = 15 V; ID = 7.2 A; VGS = 10 V; - 4 - ns
tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 18 - ns
td(off) turn-off delay time - 15 - ns
tf fall time - 7 - ns
Source-drain diode
VSD source-drain voltage IS = 2 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
trr reverse recovery time IS = 2 A; dIS/dt = -100 A/µs; VGS = 0 V; - 11 - ns
Qr recovered charge VDS = 15 V; Tj = 25 °C - 4 - nC

aaa-029608 aaa-029609
20 10-3
VGS = 10 V
ID 3.0 V
(A) 4.5 V ID
(A)
15
min typ max
2.8 V
10-4
10 2.6 V
10-5
5 2.4 V
2.2 V
0 10-6
0 1 2 3 4 5 0 1 2 3
VDS (V) VGS (V)
Tj = 25 °C Tj = 25 °C; VDS = 5 V
Fig. 6. Output characteristics: drain current as a Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values gate-source voltage
aaa-029610 aaa-029611
100 200
RDSon RDSon
(m ) (mΩ)
2.6 V 2.8 V 3.0 V
75 150
50 100
3.5 V
25 50 Tj = 175 °C
4.5 V
VGS = 10 V
Tj = 25 °C
0 0
0 5 10 15 20 0 2 4 6 8 10
ID (A) VGS (V)
Tj = 25 °C ID = 5.5 A
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values

aaa-029612 aaa-029613
20 2.0
ID a
(A)
15 1.5
10 1.0
Tj = 175 °C Tj = 25 °C
5 0.5
0 0
0 1 2 3 4 -60 0 60 120 180
VGS (V) Tj (°C)
VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
aaa-029614 aaa-029615
3 103
ID max
(A) Ciss
C
(pF)
2
typ
102
Coss
Crss
1
min
0 10
-60 0 60 120 180 10-1 1 10 102
Tj (°C) VDS (V)
ID = 250 µA; VDS = VGS f = 1 MHz; VGS = 0 V

Fig. 12. Gate-source threshold voltage as a function of Fig. 13. Input, output and reverse transfer capacitances
junction temperature as a function of drain-source voltage; typical
values

aaa-029616
10
VDS
VGS
(V)
ID
8
VGS(pl)
6
VGS(th)
4 VGS
QGS2
QGS1
2 QGS QGD
QG(tot)
003aaa508
0 Fig. 15. Gate charge waveform definitions

0 2 4 6 8 10
QG (nC)
ID = 5.5 A; VDS = 15 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-029617
4
IS
(A)
Tj = 175 °C Tj = 25 °C
1
0
0 0.4 0.8 1.2
VSD (V)
VGS = 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values

11. Test information
P t1
duty cycle δ =
t2 t2
t1
t
006aaa812
Fig. 17. Duty cycle definition
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.

12. Package outline

DFN2020MD-6: plastic thermal enhanced ultra thin small outline package; no leads;
6 terminals; body 2 x 2 x 0.65 mm SOT1220
(8×)
pin 1 E B A
index area
D A
T (6×)
A1
detail X
solderable lead
end protrusion
max. 0.02 mm (6×)
C
E2 Lp y1 C y
D2 3 4
J1 e
J 2 5
bp (6×)
D1
e v A B
1 6
pin 1 X
index area E1
0 2 mm
Dimensions (mm are the original dimensions) scale
Unit A A1 bp D D1 D2 E E1 E2 e J J1 Lp T v y y1
min 0.25 1.9 1.0 0.2 1.9 1.1 0.51 0.2 0.10
mm nom 0.65 0.27 0.64 0.16 0.1 0.05 0.1
max 0.65 0.04 0.35 2.1 1.2 0.3 2.1 1.3 0.61 0.3 0.22
Note
1. Dimension A is including plating thickness. sot1220_po
Outline References European

Issue date
version IEC JEDEC JEITA projection
18-05-30
SOT1220
18-06-07
Fig. 18. Package outline DFN2020MD‑6 (SOT1220)

13. Soldering
Footprint information for reflow soldering of DFN2020MD-6 package SOT1220
0.33 (6×) 0.76
0.43 (6×) 0.66
0.53 (6×) 0.56
0.25 0.35 0.45
0.775
0.65
2.06
0.285
1.25
0.35 (6×) 0.65
1.35 1.05
0.25 (6×) 0.45 (6×)
0.9
1.1
1.2
0.935 0.935
2.5
solder land solder land plus solder paste
solder paste deposit solder resist
occupied area Dimensions in mm sot1220_fr
Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220)

14. Revision history

Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
BUK6D22-30E v.1 20190410 Product data sheet - -

equipment, nor in applications where failure or malfunction of an Nexperia
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applications and therefore such inclusion and/or use is at the customer's own
Data sheet status risk.
Quick reference data — The Quick reference data is an extract of the
Document status Product Definition product data given in the Limiting values and Characteristics sections of this
[1][2] status [3] document, and as such is not complete, exhaustive or legally binding.
Objective [short] Development This document contains data from Applications — Applications that are described herein for any of these
data sheet the objective specification for products are for illustrative purposes only. Nexperia makes no representation
product development. or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short] Qualification This document contains data from
Customers are responsible for the design and operation of their applications
data sheet the preliminary specification.
and products using Nexperia products, and Nexperia accepts no liability for
Product [short] Production This document contains the product any assistance with applications or customer product design. It is customer’s
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modifications or additions. Nexperia does not give any representations or the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
with the same product type number(s) and title. A short data sheet is
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detailed and full information. For detailed and full information see the relevant
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office. In case of any inconsistency or conflict with the short data sheet, the sold subject to the general terms and conditions of commercial sale, as
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Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 5
10. Characteristics............................................................ 6
11. Test information........................................................ 10
12. Package outline........................................................ 11
13. Soldering................................................................... 12
14. Revision history........................................................13
15. Legal information......................................................14
© Nexperia B.V. 2019. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 10 April 2019

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BUK6D22-30E

30 V, N-channel Trench MOSFET

2. Features and benefits

4. Quick reference data

5 D drain Transparent top view

Product data sheet 10 April 2019 2 / 15

Product data sheet 10 April 2019 3 / 15

Product data sheet 10 April 2019 4 / 15

Zth(j-sp) duty cycle = 1

FR4 PCB, standard footprint

Product data sheet 10 April 2019 5 / 15

Product data sheet 10 April 2019 6 / 15

Product data sheet 10 April 2019 7 / 15

VDS > ID × RDSon

ID = 250 µA; VDS = VGS f = 1 MHz; VGS = 0 V

Product data sheet 10 April 2019 8 / 15

0 Fig. 15. Gate charge waveform definitions

ID = 5.5 A; VDS = 15 V; Tamb = 25 °C

Product data sheet 10 April 2019 9 / 15

11. Test information

Fig. 17. Duty cycle definition

Product data sheet 10 April 2019 10 / 15

12. Package outline

Dimensions (mm are the original dimensions) scale

Outline References European

Fig. 18. Package outline DFN2020MD‑6 (SOT1220)

Product data sheet 10 April 2019 11 / 15

0.33 (6×) 0.76

0.43 (6×) 0.66

0.53 (6×) 0.56

0.25 0.35 0.45

0.25 (6×) 0.45 (6×)

solder land solder land plus solder paste

solder paste deposit solder resist

occupied area Dimensions in mm sot1220_fr

Fig. 19. Reflow soldering footprint for DFN2020MD‑6 (SOT1220)

Product data sheet 10 April 2019 12 / 15

14. Revision history

Product data sheet 10 April 2019 13 / 15

Product data sheet 10 April 2019 14 / 15

© Nexperia B.V. 2019. All rights reserved

Product data sheet 10 April 2019 15 / 15

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