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    26 views16 pages

    EE 08 B - Industrial Electronics and Instrumentation PPDF 2

    Uploaded by

    KENNED SABANILLA

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    © All Rights Reserved
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    faa ore nod EE 08-B: INDUSTRIAL ELECTRONICS AND INSTRUMENTATION TT ~— Thyrsters 2 Measurement Notere = Bridge Circuits oe COMPANION REVs: 0 E5803, £r8.04 EGE THYRISTOR = fefers te family offou-layer semiconducior devices tolid stata devices used ae a suiteh in applications that handles larger valtage and currents ‘THYRISTORS CHARACTERISTIC CURVE: ir FORWARD BREAKOVER VOLTAGE = value of Vetage needed to switch tom FER to FoR ‘SWITCHING CURRENT = yalue of current needed to switch rom FBR to FcR HOLDING CURRENT = minimum value of current needed to maintain at FOR Gi PERGoC Learnhub EE 8B: industrial Electronics and Instrumentation Tar cus rH You have the schematic éagram of several types of circuits. Which of these Circuits most Ikely uses a tiac? Aan oscilator B. aprogrammablo escilator ©. an as moter contol D. an ampifie: ‘The symbat in ngure is for sus sas cs Shozkley cod Younave a tght-aimmer ereut using an SOR. In testing the circuit, you find that IS = 0 mA and the light is stl on. You ‘conclude that he trouble right be one of the ‘ollwing: {A the SCR Is open, the awitch faulty ©. the gate circus is shertes D. this $ normal, nothing is wrong Given a relaxation eseltator circuit with soutce vollage of 12V, Rus=5 KO, =0.6, We 4V, vet0mA, he=49 BA, R1=S0 ko, 4 pF, R2=0.1 KO. Calculate Ray and Razat A 3KO, 240 B.2ka,3ka. ©. 40, 6k D.6KO, 4k You need a very affcient thyrstor to contol the speed of an AC fan moter. A ‘good device to use would be A-ad-layer diode B atriee C.aPUT. Dabur. ICT Integrated ECE Review ELECTRONICS 2_RASEE. SILICON CONTROLLED RECTIFIER (SCR) 6. Your bose has ackod you to recommond most commonly used and most popular a thyristor that wil enable you fo turn ton ‘hynstor with a pulse and also turn it off wah a ‘hree-terminal unilateral device used to control pulse, Which of te following should you large currents toa load Fecomnend? Aan SCR B an sos ©. aPUT D. atriac f= | 7. Tho intinsic stand-off rato for a UST determined te be 06 If the infer-base acura One resistance is 10 kilo ohms, what is the solic aetath &.2konms IMPORTANT PARAMETERS: B. Gkohms © A konme SCR's Conduction Angle (CA) D. 8konms ‘The angular cegiees of an AC cycle duiing which tne SOR ie tumod on. 8. Determine Roy for a slicon UAT Ir itIs etermined that n= 0.84, Ve = 11.2 V, SCR's Firing Delay Angle (FDA) Angular degrees of an AC cyde that elapses before A 125k. SOR istuined on. 525.25 k0 ©. 325Ko Turning ON an SCR D. 46.25 ka. “L.Apply enough gate tiggering current 2 Apply anode voltage equal o break-over 9. The circuit shown in the figure uses voltage variable resistor R, to change the ‘equency of pulses detvered at Viu..The Turning OFF an SCR variable resistor is intialy set at Sic and 4. Anode current interruption is than adjusted fo 10 KO. Determine the 2. Forced commutation fiequercy of he voltage spkes produced “tins for 10 KO seting, Triowe AC sated DIAC " 2 three-terminal device used to contol the amount of current fowirg 19 aloaa os an conduct current in either direction when i is turned on s0 itis a bidresticnal thyritor 7 equivalentto a two SCR's connectedin nverse parallel A128 HE " B eisH e ©. 128 kite D645 KH GV PERGCoc Learnhub ICT Integrated ECE Review faa ore nod RUS EE 8.8: Incustral Electronics ancl Instrumentation _3 BREAK.OVER DEVICES ‘all thyrsiors which are normally not used to Suilch the main load current Useful as triggering devices SHOCKLEY DIODE a 4-layer dlode constructed like an SCR but vwihout gate terminal Unilateral, tvo-terminal triggering device " ome Characteristic Curve ping Diode AC constucted lke a TRIAC but without a gate terminal used fo tigger TRIAC circus ‘wo-termina bilateral symmetrical tigger device ashlet rast See, see Gi PERGoC Learnhub 10. 2 18, 1“ 15, The total rumber of leads in SUS, SBS and SCS respecively are A334 89,93 e233 D335 ‘he ___ the anode gate current, tne The required ancde-o-cathode ‘ollage to ture the SCS device on ‘A higher, higher B. lower, higher . higher, ower lower, ower ‘An SOR diffe from the 4-layer diode because ‘A ithas a gate terminal 1B. itis not a thyristor CC. itdose not have four layer D-iteannet be turned on and off “The methed(s) for turing off an SCR is (are) categorized as K. anode voltage intaruption 8. forced commutation ©. both A and . None of the apove Refer to the igure bolow. This symbol ie an example of a(n) TRIAG Is equivalent to 5. wo DIACS in paralle! ©. athyrisior with a gate lead Wo SCRS in paral ICT Integrated ECE Review 4_RNS-EE 4.2: Inchwtrial Blectronios and Instrumentation SILICON CONTROLLED swITcH (scs) 16 + simiar constriction to SCR = has twe gate terminals = ean beturmed “on” cn ether gate Smart, fe = see Eauraien sonoma Scnerranesyreey SILICON UNILATERAL SWITCH (SUS) 18 < similar to a 4layer diode with a typical break. over voltage of 8 vols ~ interms of ring, ithas faster rate than Shockley diove anode Gate ag Cathode) SILICON BILATERAL SWITCH (SBS) < abfateral or bidiecsional break-over device ‘equivalent to two SUS connected back fo back in parallel = has lover break-over voltages than giacs Tp Tenminal cate FE 7 Terminal 20, 1 PERCoe Learnhub ELECTRONICS Which of the following devices has two gates? BSCR B.scs sus D.SBS For a relaxation oscilator orcult wth source vollage of 12V, Ruu-SkO. 9-016 Wa 4V, hat0mA, Ip=iD a, 1-50 kO, 1 pF R2=0.1 KO. Calculate the voltage necessary to tum on the UJT. ABV 5.ov cay Dv ‘The minimum anode current that keeps a Inyristor tured on is called the A Holding current B. Trigger current ©. Breskover current D. Low-current drop out The canbe externally programmed fo tum on at a desired ‘anode-o-gate voltage leve! AWT PUT c.scr D.scs The tae is 4. like a biirectional SOR 8. afour-terminal device not a thyristor D. answers (a) and (o) ICT Integrated ECE Review faa ore nod GATE TURN OFF SWITCH (STO) similar to the SCR except that it can be turned on or of from the gate oe UNUUNCTION TRANSISTOR (UIT) ~ 2laver,three-terminal treek-over type switching deve = dauble-based diode + semiconducter device consisting of thin slicon bar on which a PN junetion acting as emir is formed near one end ~ operates in the negative resistance region UST PARAMETERS: Inter-Base Resistance Rep = Roi + Ri Intrinsic Stand-Off Ratio ies ring Potentat Ve = Ven + Vou Gi PERGoC Learnhub 2 2. 23 24, 25, — EE 8.8: Industrial Electronics and Instrumentation _8 nan SCR the anode current consisis or 4. only notes 1. both electrons and holes © nly electrans D.elther electrons or holes ‘The minimum gate current whien can turn on SCR is called 4 tigger current 8. juncion current ©. holding current D. breakover current Determine the necessary supply voltage fora silcon PUT ifn-03, Vo=10.3 Vand Rus=5 kA. bv c.10v B.ov Di2v \Which ofthe following devices has a negative-resistance region in és characterstios curve? SCR 5. Unijunotion Transister cscs D. Phoiotransistor After fring an SCR, the gang pulse is removed. The ewrent in the SCR il 4. remain ihe same 5 rseup . immediately fall to zer0 D. sea ltle an then fall zero ICT Integrated ECE Review ELECTRONICS 6 _RNS—EE 8.3: Incheorial Electronics and Instrumentation PROGRAMMABLE UNLIUNCTION TRANSISTOR (Put) ~simiar in operating characteristics as UJT but not in constructen = Hayerthree-terminal device \ Ye en ‘| PUT Firing Potent: W=Ve+ Wo Ve= 0 Va +Vb Ra Y= tame USTIPUT RELAXATION OSCILLATOR: 1 PERCoe Learnhub IcT 26. Deletmine RDI fora sicon PUT if itis determined that h 0.84, VP = 11.2V, and RE2 =5 KO. 412.65 kD 5 15.25 ka 20.00 ka. 26.25 ka. 27. entity the symbot /— Asc 8 PUT .LASCR, D.SOR 20, Determine the necessary supply voltage fora silcon PUT ifq=0 8, Ve=t0.3 Vand 28. An SCR acts to control the speed of an elearie motor oy ine of the pulse delivered to the motor ‘A varying, width B increasing, amplitude ©. decreasing, gate wictn none ofthese 30. AnSCRisa ‘A four layer, four junction device 8. four layer, three juncion device ©. fourlayer, ve junction device D. three layer, single junction device Integrated ECE Review faa ore nod D’ARSONVAL NETER MOVEMENT = also known as = the most sensitive deflecting movement * ype ofmeter movement that aperates upon the Imeracion of the magnellc Nelds Deween a permanent magret and an electremagnat = the amount of the movement is proportional to the current = teatts directly to current + ean measure current (rect findredlly), and resistance (indivecty) = ean measure DCiditectly) and AC(indirect) * patented by JACQUES d’ARSONVAL in 1281 = the accuracy is 0.1 02% Pemanent seg Mov i Representation R,,- Meter internal resistance Gi PERGoC Learnhub PERMANENT-MAGNET MOVING-COL (PMMC) meter movernent = most popular and most widely used deflecting EE 8: Industrial Electrons and Instrumentation _1 m 2 voltage Ey 34 35 “The tw transister model ofa thyristor consists oftwo transistors A one npn and other p-n-p 8. both p-r-p ©. bothnp-n Done n-pn and other UIT A relaxation oscilater circuit with source 6) 41 pF, 2=0.1 KO. Determine the fiequency of escilation if Rai=100 0 curing the discharge phase i he forward votage drop across the diode is Ignored A106 He Bt ae .131Hz D.2tgHe Younesd to docign a relaxation cscilator circuit. The mest likely device to use might be Aan SCR Bast © atria D ad-taver diode Choose the false statement. A, SCRis a buirectional device E. SCRie a controlled covico In SCR the gate isthe controling terminal SCR are used for high-power eppicaiions| Ina thyristor, he forward breakover voltage 2. isconstant 8. may be constant or may deperd cn gate current € decreases as gate current increased 1D increases as cate current is increase ICT Integrated ECE Review Barron od 8_RNS—EES-3: Inchctrial Electronics and Instrumentation THREE FORCES INVOLVED IN THE OPERATION of PMMC METER MOVEMENT: 1 Deftectng Force 2. Controling Force 3. Damping Force BASIC METERS 1 Ammeter 2. Voltmeter 3. Ohmmeter AMMETER ~ a device that indicates the amount of current Towing ‘connected in SERIES when measuring curent cIRCUTT: METER 1 PERCoe Learnhub SHUNT 4 precision resistor connected across the meter movement ter tne purpose of stunting, or bypassing a specinc fraction of the circuits ‘current around the mater movement Effect: extond the range of he ammeter 36. The symbel in figures for .sus B sas cscs 1. None of the above 37, The Uke a diae with 2 gate terminal A. trae E.SOR cscs 1B none ofthe above 38. The SCS (Silicon Controlled Switeh)is 2 two terminal device E. three terminal device ©. fourterminal device fire terminal davice 39 device from the thyristor Tamiy Fas its gate terminal connected to the n-type maicrial near the anode. ASCR GTO PUT Dsus 40. The Js tke a diae with 2 gste terminal A. tae SCR ¢.scs none ofthe atove ICT Integrated ECE Review faa ore nod AYRTON SHUNT. = alse known as UNIVERSAL SHUNT = used for mulipe-range ammeter oe —_ 38 a AMMETER ERROR: Errors in Ammeter reading due to INSERTION effests. wore: = a current meter should have very low resistance compared vith the circuit where the current is being measured- te avoid current meter loading or insertion effect! Gi PERGoC Learnhub a 42, 43 45. — EE 8.8: Industrial Electronics and Instrumentation _9 ity the oymbot A wae PUT © ses D.SOR The SCS (Silicon Contes Switen) Is 2 4. to terminal davieo E three terminal device . fourterminal device . five terminal device In the SOR structure the gate terminal located 2 near the anode terminal . near the cathode terminal . in between tne anode & canoce terminal 1D none ofthe mentioned ‘he intinsic stand-of ratio fora UJTis cetermnes tone 0.6. Ifthe inter-base resistance is 40 klo ohms, what is the values of Fo, #2 konme E.G konms ¢. 4konms 1. 8 kohms Determine Rs: fora silicon UsT iit is cetermines that n= 0.84, Vp = 11.2, and Re: 4 128k0 2825 ko ©. 325k0. 43.25 ka. ICT Integrated ECE Review 10 _RNS—EE 8.B: Industrial Electronics ena ln VOLTMETER ~ a instument used for measuring electrical potential dfference between two points in an eomne circu = connected i SHUNTPARALLEL mmeacuring voltages when ciRcUT: MULTIPLIER RESISTOR

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