This theoretical model uses a one-dimensional structure to analyze a device in a simple way, with a substrate characterized by a constant dopant concentration and a depletion region width w that depends on VG. Charges are neglected and the layers are considered individually starting from the substrate.
This theoretical model uses a one-dimensional structure to analyze a device in a simple way, with a substrate characterized by a constant dopant concentration and a depletion region width w that depends on VG. Charges are neglected and the layers are considered individually starting from the substrate.
This theoretical model uses a one-dimensional structure to analyze a device in a simple way, with a substrate characterized by a constant dopant concentration and a depletion region width w that depends on VG. Charges are neglected and the layers are considered individually starting from the substrate.
In order to keep this analysis as simple as possible we consider a one-dimensional structure
where the substrate is characterized by a constant dopant concentration and a depletion region width w, the latter obviously dependent on VG. In this model moving charges are neglected .and the layers in the stack are considered one by one, starting from the substrate