Introduction

The purpose of this report is to provide a possible simplified analytical approach by which it
is possible to evaluate and graphically represent the width of the depletion region of a given
.MOS structure as a function of the applied voltage VG

Since we are dealing with a p-type substrate, the constant charge due to the generation of
fixed ions in the depletion region is negative. Therefore, we can deduce the electric field E in
.the depletion region by means of the integral form of Gauss’s Law