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    Umberto Laganà
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    The document describes a MOS stack characterized by a polysilicon n++ region with a doping concentration of 1020cm-3, an area of 6000μm2, a 6nm thick SiO2 oxide layer, and a p-type substrate with a resistivity of 20Ω/cm. Using a provided conversion table, the impurity concentration of the p-type substrate is calculated to be 7 x 1014.

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    The document describes a MOS stack characterized by a polysilicon n++ region with a doping concentration of 1020cm-3, an area of 6000μm2, a 6nm thick SiO2 oxide layer, and a p-type substrate with a resistivity of 20Ω/cm. Using a provided conversion table, the impurity concentration of the p-type substrate is calculated to be 7 x 1014.

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    10 views1 page

    2

    Uploaded by

    Umberto Laganà
    The document describes a MOS stack characterized by a polysilicon n++ region with a doping concentration of 1020cm-3, an area of 6000μm2, a 6nm thick SiO2 oxide layer, and a p-type substrate with a resistivity of 20Ω/cm. Using a provided conversion table, the impurity concentration of the p-type substrate is calculated to be 7 x 1014.

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    © All Rights Reserved
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    :The given MOS stack is characterized by

    An area of 6000µm2 •
    Polysilicon n++ regions with a doping concentration of 1020cm-3 •
    A 6nm thick oxide layer (SiO2) •
    A substrate which presents a resistivity value of 20Ω/cm •
    It is possible to convert the resistivity of the substrate into impurity concentration using the
    provided conversion table (fig.1). Since this device has a p-type substrate, if we look at the
    :correspondent curve what we get is

    NA(20 Ω/cm) = 7 x 1014

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