Theoretical model used

In order to keep this analysis as simple as possible we consider a one-dimensional structure

where the substrate is characterized by a constant dopant concentration and a depletion region
width w, the latter obviously dependent on VG. In this model moving charges are neglected
.and the layers in the stack are considered one by one, starting from the substrate

Introduction
The purpose of this report is to provide a possible simplified analytical approach by which it
is possible to evaluate and graphically represent the width of the depletion region of a given
.MOS structure as a function of the applied voltage VG

Since we are dealing with a p-type substrate, the constant charge due to the generation of
fixed ions in the depletion region is negative. Therefore, we can deduce the electric field E in
.the depletion region by means of the integral form of Gauss’s Law