P2N2222A

Amplifier Transistors
NPN Silicon

Features
• These are Pb−Free Devices* http://onsemi.com

COLLECTOR
1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic Symbol Value Unit 2
Collector −Emitter Voltage VCEO 40 Vdc BASE

Collector −Base Voltage VCBO 75 Vdc

3
Emitter−Base Voltage VEBO 6.0 Vdc
EMITTER
Collector Current − Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C

Total Device Dissipation @ TC = 25°C PD 1.5 W TO−92

Derate above 25°C 12 mW/°C CASE 29
STYLE 17
Operating and Storage Junction TJ, Tstg −55 to °C
Temperature Range +150
12 1
2
THERMAL CHARACTERISTICS 3 3
STRAIGHT LEAD BENT LEAD
Characteristic Symbol Max Unit
BULK PACK TAPE & REEL
Thermal Resistance, Junction to Ambient RqJA 200 °C/W AMMO PACK

Thermal Resistance, Junction to Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum MARKING DIAGRAM
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
P2N2
222A
AYWW G
G

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
Device Package Shipping†
P2N2222AG TO−92 5000 Units/Bulk
(Pb−Free)

P2N2222ARL1G TO−92 2000/Tape & Ammo

(Pb−Free)
†For information on tape and reel specifications,
*For additional information on our Pb−Free strategy and soldering details, please including part orientation and tape sizes, please
download the ON Semiconductor Soldering and Mounting Techniques refer to our Tape and Reel Packaging Specification
Reference Manual, SOLDERRM/D. Brochure, BRD8011/D.

© Semiconductor Components Industries, LLC, 2013 1 Publication Order Number:

January, 2013 − Rev. 7 P2N2222A/D