Chapter 27

Semiconductor Electronics :
Materials Devices and Simple Circuits
1. Answer (4) 7. Answer (1)

(
y = A+B = A.B )
p n
The combination represents AND Gate Truth table.
For forward Bias, p-side must be at higher potential
A B Y
than n-side.
0 0 0
8. Answer (2)
0 1 0
For metals, resistance increases upon increase in
1 0 0
temperature. For undoped Si, resistance decreases
1 1 1 upon decrease in temperature.
2. Answer (2) 9. Answer (4)
Let input be Information based question.
vi 10. Answer (2)
OR gate as output is 1 when any of the input is 1.
T T t 11. Answer (1, 3)
2
Ie = Ib + Ic
T Ie I b
From 0  Diode is in forward bias so there  1
2 Ic Ic
will be current
T 1 1
From T Diodes is in reverse bias so current  1
2  
through resistor will be zero.

3. Answer (2) or 
1 
A 12. Answer (4)
A
A· B = A + B In common emitter configuration for n-p-n transistor,
NOT =A+B phase difference between output and input voltage
B NAND is 180°.
B
NOT
13. Answer (3)
200 
4. Answer (4)
The output is

y  ( A  B)
5. Answer (4)
3V
6. Answer (1)
V – Vdiode  ⎡ 3 – 0.7  1000 ⎤ mA
The LED emitting red colour will have a smaller I ⎢ 200 ⎥
R ⎣ ⎦
energy gap between conduction band and valance
band. Accordingly its knee voltage would be less. = 11.5 mA

  
Aakash Educational Services Limited - Regd. Office : Aakash Tower, 8, Pusa Road, New Delhi-110005 Ph.011-47623456