IPZ60R017C7

MOSFET
600VCoolMOSªC7PowerTransistor PG-TO247-4

CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.

600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ
MOSFETsupplierwithhighclassinnovation.

The600VC7isthefirsttechnologyeverwithRDS(on)*Abelow1Ohm*mm².

Features
•Suitableforhardandsoftswitching(PFCandhighperformanceLLC)
•IncreasedMOSFETdv/dtruggednessto120V/ns Drain
•IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg Pin 1

•BestinclassRDS(on)/package
•Easytouse/drive Gate
•Pb-freeplating,halogenfreemoldcompound Pin 4
Driver
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 Source
Power
andJESD22) Pin 3
Source
•4pinkelvinsourceconcept Pin 2

Benefits
•IncreasedeconomiesofscalebyuseinPFCandPWMtopologiesinthe
application
•Higherdv/dtlimitenablesfasterswitchingleadingtohigherefficiency
•Enablinghighersystemefficiencybylowerswitchinglosses
•Increasedpowerdensitysolutionsduetosmallerpackages
•Suitableforapplicationssuchasserver,telecomandsolar
•Upto0.5%betterfullloadefficiency@100kHzcomparedtoconventional
3pinpackage

Applications
PFCstagesandPWMstages(TTF,LLC)forhighpower/performance
SMPSe.g.Computing,Server,Telecom,UPSandSolar.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj,max 650 V
RDS(on),max 17 mΩ
Qg.typ 240 nC
ID,pulse 495 A
ID,continuous @ Tj<150°C 129 A
Eoss@400V 30 µJ
Body diode di/dt 200 A/µs

Type/OrderingCode Package Marking RelatedLinks

IPZ60R017C7 PG-TO 247-4 60C7017 see Appendix A

Final Data Sheet 1 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Final Data Sheet 2 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 109 TC=25°C
Continuous drain current1) ID A
- - 69 TC=100°C
Pulsed drain current2) ID,pulse - - 495 A TC=25°C
Avalanche energy, single pulse EAS - - 582 mJ ID=12.6A; VDD=50V; see table 10
Avalanche energy, repetitive EAR - - 2.91 mJ ID=12.6A; VDD=50V; see table 10
Avalanche current, single pulse IAS - - 12.6 A -
MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400V
Gate source voltage (static) VGS -20 - 20 V static;
Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)
Power dissipation Ptot - - 446 W TC=25°C
Storage temperature Tstg -55 - 150 °C -
Operating junction temperature Tj -55 - 150 °C -
Mounting torque - - - 60 Ncm M3 and M3.5 screws
Continuous diode forward current IS - - 109 A TC=25°C
Diode pulse current 2)
IS,pulse - - 495 A TC=25°C
VDS=0...400V,ISD<=12.6A,Tj=25°C
Reverse diode dv/dt3) dv/dt - - 20 V/ns
see table 8
VDS=0...400V,ISD<=12.6A,Tj=25°C
Maximum diode commutation speed dif/dt - - 200 A/µs
see table 8
Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1)
Limited by Tj max.
2)
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch
Final Data Sheet 3 Rev.2.0,2016-03-01
 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 0.28 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W n.a.
for SMD version
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s
only allowed at leads

Final Data Sheet 4 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
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3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 3 3.5 4 V VDS=VGS,ID=2.91mA
- - 2 VDS=600,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 50 - VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V
- 0.015 0.017 VGS=10V,ID=58.2A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 0.033 - VGS=10V,ID=58.2A,Tj=150°C
Gate resistance RG - 0.45 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 9890 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 200 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 375 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 3840 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=58.2A,
Turn-on delay time td(on) - 30 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=58.2A,
Rise time tr - 13 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=58.2A,
Turn-off delay time td(off) - 106 - ns
RG=1.8Ω;seetable9
VDD=400V,VGS=13V,ID=58.2A,
Fall time tf - 3 - ns
RG=1.8Ω;seetable9

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 50 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate to drain charge Qgd - 85 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate charge total Qg - 240 - nC VDD=400V,ID=58.2A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=400V,ID=58.2A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 5 Rev.2.0,2016-03-01
 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=58.2A,Tj=25°C
VR=400V,IF=58.2A,diF/dt=100A/µs;
Reverse recovery time trr - 630 - ns
see table 8
VR=400V,IF=58.2A,diF/dt=100A/µs;
Reverse recovery charge Qrr - 18 - µC
see table 8
VR=400V,IF=58.2A,diF/dt=100A/µs;
Peak reverse recovery current Irrm - 55 - A
see table 8

Final Data Sheet 6 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
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4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
500 103 100 µs 10 µs 1 µs
1 ms
450 10 ms
102
400
DC
350
101

300
Ptot[W]

ID[A]
250 100

200

10-1
150

100
10-2

50

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
3
10 100
10 µs 1 µs
100 µs
1 ms
10 ms
2
10

DC 0.5

101 10-1
0.2
ZthJC[K/W]

0.1
ID[A]

100

0.05

10-1 10-2 0.02

0.01

single pulse
10-2

10-3 10-3
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 7 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
800 450
20 V

700 20 V 400
10 V
10 V 8V
350 7V
600 8V

300 6V
7V
500

250
ID[A]

ID[A]
400
200 5.5 V
300
6V 150

200 5V
100
5.5 V

100 4.5 V
5V 50

4.5 V
0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
0.07 0.040
5.5 V 6.5 V 6V
7V

0.035

0.06
0.030
10 V

20 V 0.025
RDS(on)[Ω]

RDS(on)[Ω]

0.05 98%

0.020

typ
0.015
0.04

0.010

0.03 0.005
0 50 100 150 200 250 300 350 400 450 500 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=58.2A;VGS=10V

Final Data Sheet 8 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
800 12

120 V
700
25 °C 10 400 V

600

8
500

VGS[V]
ID[A]

400 6

150 °C
300
4

200

2
100

0 0
0 2 4 6 8 10 12 0 50 100 150 200 250 300
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=58.2Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy
3
10 600

550

500

102 450
125 °C 25 °C 400

350
EAS[mJ]
IF[A]

101 300

250

200

100 150

100

50

10-1 0
0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 25 50 75 100 125 150
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj EAS=f(Tj);ID=12.6A;VDD=50V

Final Data Sheet 9 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances
700 105

680
Ciss
104
660

640

103
620
VBR(DSS)[V]

C[pF]
Coss

600
102

580

560
101
Crss
540

520 100
-60 -30 0 30 60 90 120 150 0 100 200 300 400
Tj[°C] VDS[V]
VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy
30

25

20
Eoss[µJ]

15

10

0
0 100 200 300 400
VDS[V]
Eoss=f(VDS)

Final Data Sheet 10 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
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5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

V ,I
Rg1 VDS( peak)
VDS
VDS

VDS IF
trr
tF tS
Rg 2 dIF / dt
IF t
QF QS 10 %Irrm
IF dIrr / dt trr =tF +tS
Irrm Qrr = QF + QS
Rg1 = Rg 2

Table9switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS

ID VDS

VDS VDS
ID

Final Data Sheet 11 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

6PackageOutlines

Figure1OutlinePG-TO247-4

Final Data Sheet 12 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

7AppendixA

Table11RelatedLinks
• IFXCoolMOSTMC7Webpage:www.infineon.com

• IFXCoolMOSTMC7applicationnote:www.infineon.com

• IFXCoolMOSTMC7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 13 Rev.2.0,2016-03-01

 600VCoolMOSªC7PowerTransistor
IPZ60R017C7

RevisionHistory
IPZ60R017C7

Revision:2016-03-01,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-03-01 Release of final version

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.

LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).

Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

Final Data Sheet 14 Rev.2.0,2016-03-01