Photocoupler

K101 • K102 • K104

These Photocouplers consist of a Gallium Arsenide Infrared Emitting

Diode and a Silicon NPN Phototransistor per a channel.
The K101 has one channel in a 4-pin mini-flat SMD package.
The K102 has two channels in a 8-pin mini-flat SMD package.
The K104 has four channels in a 16-pin mini-flat SMD package.

FEATURES
• Mini-Flat Package
• Collector-Emitter Voltage : Min.50V
• Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V)
• Electrical Isolation Voltage : AC3750Vrms

APPLICATIONS
• Interface between two circuits of different potential
• Cordless Phone
• Programmable Logic Control
• Microcomputer

DIMENSION (Unit : mm)

K101 K102
4 3 8 7 6 5
0.2

0.2
4.4

4.4

1 2 1 2 3 4

Orientation Mark Orientation Mark

7.0 0.5 7.0 0.5

3.6 0.2 8.7 0.2
5.2 0.2
0.05

5.2 0.2
0.2
0.2

0.15

2.5
2.5

0.4Min.
0.1

0.4 0.1 0.4Min.

0.05

2.54 2.54
0.1

2.54 0.25
0.15

K104
16 15 14 13 12 11 10 9
0.2
4.4

1 2 3 4 5 6 7 8

Orientation Mark

7.0 0.5
18.8 0.2
5.2 0.2
0.2
2.5

0.1

0.4Min.
0.05

2.54 2.54
0.1

0.15

1/3
Photocoupler

K101 • K102 • K104

MAXIMUM RATINGS (Ta=25℃ )

Parameter Symbol Rating Unit
Forward Current IF 50 mA
Reverse Voltage VR 5 V
Input *1
Peak Forward Current IFP 1 A
Power Dissipation PD 70 mW
Collector-Emitter Breakdown Voltage BVCEO 50 V
Emitter-Collector Breakdown Voltage BVECO 6 V
Output
Collector Current IC 50 mA
Collector Power Dissipation PC 150 mW
*2
Input to Output Isolation Voltage Viso AC3750 Vrms
Storage Temperature Tstg -55~+125 ℃
Operating Temperature Topr -30~+100 ℃
Lead Soldering Temperature *3
Tsol 260 ℃
Total Power Dissipation Ptot 200 mW
*1. Input current with 100µs pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ , unless otherwise noted)

Parameter Symbol Condition Min. Typ. Max. Unit.
Forward Voltage VF IF=10mA - 1.15 1.30 V
Input Reverse Current IR VR=5V - - 10 ㎂
Capacitance CT V=0, f=1MHz - 30 - pF
Collector-Emitter Breakdown Voltage BVCEO IC=0.5mA 50 - - V
Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V
Output
Collector Dark Current ICEO IF=0, VCE=24V - - 100 nA
Capacitance CCE VCE=0, f=1MHz - 10 - pF
*4
Current Transfer Ratio CTR IF=5mA, VCE=5V 50 - 600 %
Collector-Emitter Saturation Voltage VCE(SAT) IF=5mA, IC=1mA - 0.15 0.4 V
Input-Output Capacitance CIO V=0, f=1MHz - 1 - pF
Coupled
Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 10 11
- Ω
Rise Time tr VCE=5V, RL=100 - 3 - ㎲
Fall Time tf IC=2mA - 3 - ㎲
*4. CTR=(IC/IF) X 100 (%)

2/3
Photocoupler

K101 • K102 • K104

Forward Current vs. Collector Power Dissipation vs. Forward Current vs.
Ambient Temperature Ambient Temperature Forward Voltage
50 250 100

Collector Power Dissipation P C (mW)

Forward Current I F (mA)

40 200 80

Forward Current I F (mA)

30 150 60

Ta =70℃
20 100 40
T a=25℃

10 50 20

T a=-55℃
0 0 0
-20 0 20 40 60 80 100 -20 0 20 40 60 80 100 0.4 0.8 1.2 1.6
Ambient Temperature Ta (℃ ) Ambient Temperature Ta (℃ ) Forward Voltage VF (V)

Collector Current vs. Dark Current vs. Collector Current vs.

Collector-Emitter Voltage Ambient Temperature Ambient Temperature
1 100
T a =25℃

I F =30mA
40 Collector Current I C (mA) I F =20mA
Dark Current I CEO (㎂ )
Collector Current I C (mA)

V CE =24V
0.1 10 I F =10mA
I F =20mA
30
I F =5mA

P C(max.)
20 I F =10mA
0.01 1
I F =5mA
I F =1mA
10

I F =1mA
0.001 0
0 2 4 6 8 10 0 20 40 60 80 100 -20 0 20 40 60 80
Collector-Emitter Voltage VCE (V)
Ambient Temperature Ta (℃ ) Ambient Temperature Ta (℃ )

Response Time vs. Collector Current vs. Switching Time Test Circuit
Load Resistance Forward Current V CC
RL
500 V CE =5V 100 R
Ta =25℃ V IN
I C=2mA V CE =5V VO
Ta =25℃
100 10
Collector Current I C (mA)
Response Time tr , tf (μs)

1
tr
10
tf Test Circuit

0.1
Input
1
0.01 Output
10%

0.1 0.001 90% tr tf

0.1 1.0 2.0 0.1 1 10 100

Load Resistance RL (㏀ ) Forward Current I F (mA) Wave form

3/3