Ref problem
No.
[1] recent progress made at CSEM
on the development of
lowtemperature processes for
the fabrication of amorphous
silicon-based passivated
contacts and for the
metallization of high-efficiency
silicon heterojunction (SHJ)
solar cells. Intrinsic a-Si:H
passivation layers were
optimized by trying to
minimize
[2] We discuss silicon
heterojunction solar
cells with
carrierselective contact
based on thin layers of
hydrogenated
amorphous silicon
(aSi:H) and on
hydrogenated
polycrystalline silicon
(poly-Si) combined with
a ultrathin silicon oxide
layer
[3] —The amorphous silicon layers
in silicon heterojunction solar
cells absorb light in the short
wavelength region of
the solar spectrum, lowering
the generation current
available
to the device
method Main findings limitation
screen-printing process of low-temperature State-of-the art passivation levels have
Ag pastes has been optimized, resulting in been achieved with the de veloped
finger width as low as 16 µm. Alternatively, a lowtemperature passivated contacts,
photolithography-free copper electroplating demonstrated by min ority carrier
process has been developed. Using inkjet lifetimes above 50 ms on lowlydoped
printing of hotmelt for patterning, 25- wafers and close to
µmwide and highly conductive fingers can be 18 ms on actual SHJ solar cell precursors.
deposited. This process was tested in SHJ cell To be compatible with such passivated
pilot production conditions, showing high contacts, lowtemperature metallization
cell performance (22.3% median efficiency) processes are re quired.
and good reproducibility. Finally, using the
developed passivated contacts and
screenprinting process, SHJ solar cells
fabricated with industrycompatible
processes showed efficiencies up to 23.1%
on large-area devices and up to 23.9% on 4
cm2 devices.
the application of carrier-selective contacts the development of high- Recombination losses at
in c-Si frontback contacted (FBC) and efficiency c-Si solar cells at c-Si/metal interface are
interdigitated back-contacted (IBC) solar Delft University of Technology. We the main limiting factor
cells with different thermal budgets are implement first high thermal budget poly- for high efficiency
shown Si carrier-selective passivating contacts homojunction c-Si
with different architectures as poly-poly, solar cells
PeRFeCT, hybrid and IBC solar cells. We
provided strategies to improve efficiency.
The highest efficiency achieved is 23.0%
for IBC poly-Si solar cell.
The Al2O3 and MoOx films were deposited In summary, we have
using the following sequence. First, the
native oxide was removed from lowlydoped successfully deposited ALD
(100 Ω-cm), (100) n-type float-zone c-Si molybdenum oxide (MoOx )
wafers (300
µm thick) using a 2 M hydroflouric (HF) acid
with a work function of 6.21
solution. A thin eV. Together
SiOx
layer (∼1 nm) was then grown in a UV-
Ozone cleaner
using techniques described in previous
literature [24], [25].
This was done to facilitate efficient ALD
Al2O3 growth. The
Al2O3 and MoOx
layers were then deposited in a thermal ALD
reactor (CtechNano, Play Series), at a
substrate temperature of
160 °C. The ALD recipe for the Al2O3
consisted of alternating
pulses of trimethylaluminum (Al(CH3
)3
, TMA) and ozone
O3
. This was repeated for 11 cycles to achieve
an Al2O3
thickness of ∼1 nm. A forming gas pulse (5%
H2
, 95% N2
)
was added after the O3 using a metering
valve to incorporate
excess hydrogen into the film. The 4 nm
MoOx deposition
was performed using alternate pulses of
Mo(CO)6
followed
by an O3 pulse according to methods
described in previous
literature [26]. The target thicknesses for the
Al2O3 and MoOx
films was confirmed via spectroscopic
ellipsometry (M2000,
JA Woollam®).
We measured the work function φ of the
ALD MoOx
layer using ultraviolet photoelectron
spectroscopy (UPS). The
spectrum was obtained using an He I (21.22
eV) excitation
as the light source with the samples biased
at -30.0 V to
observe the low-energy secondary cutoff.
The value of φ was
determined by extrapolating the linear part
of the secondary
cutoff to zero intensity and subtracting this
energy from the
He I ionization source.
The effective carrier lifetime τef f versus
injection level ∆n
of each sample was measured just after the
Al2O3 deposition
using a Sinton WCT-120 photoconductance
tester. The measurements were performed
in either the Generalized (1/64)
or Transient modes, depending on the range
of τef f being
measured. The samples were then annealed
in a muffle furnace
at 450 °C. Saturation current density J0,
implied open-circuit
voltage iVoc, and Sef f of the samples were
extracted from the
τef f versus ∆n data.
The ρc of the Al2O3
/MoOx contact stack was measured
on 1 Ω-cm p-type c-Si wafers using the
extended TLM
(ETLM). The ETLM is an extension of the
standard TLM
and corrects for the two-dimensional
pathway that the current
travels through during the measurement
due to the lack of
an emitter in the measurement sample [27].
The lack of a
TCO in the stack and the incredibly low
thickness of the
Al2O3
/MoOx films ensure lateral transport
between TLM pads
occurs through the wafer. This ensures an
accurate measure
of ρ
[4] improved stateof-the-
art parameters on the
limiting efficiency for
crystalline silicon solar
cells under 1-sun
illumination at 25 ◦C,
by following the narrow-base approximation The new
to model ideal solar cells. We also calculations that are presented in this
considered bandgap narrowing, which was study result in a
not addressed so far with respect to maximum
efficiency limitation. theoretical efficiency of 29.43% for a 110-
μm-thick solar cell made of undoped
silicon

[5] consider the dependence of
the solar module operation on
insolation and temperature.
The temperature increases
Using the Matlab Simulink program the increase solar power plant efficiency, When
authors have developed a model of an particular consideration should be given designing solar power
autonomous solar power plant. The model to the negative effect of the increased plants, many different
considers the relationship between the temperature of the solar modules during factors are taken into
heating temperature of solar modules and their operation and the efficiency of account: installation
their efficiency during operation. The model converting solar radiation into direct location, annual solar
provides an option of selecting solar module current insolation, tilt angle of
makes, the number of modules and their modules, number of
connection circuits. Depending on a solar solar modules, ambient
module make the corresponding current and temperature, shading,
voltage parameters are automatically set. natural cooling of
When the model operates, the batteries modules. The number of
connected to the solar modules are charged solar modules
and the inverter converts DC into AC. directly determines the
efficiency of a solar
power plant.

Recent developments at CSEM on the creation oflow temperature

methods for the metallization of high-efficiency silicon heterojunction
(SHJ) solar cells and the production of passivated connections based on
amorphous silicon.By attempting to minimize, intrinsic a-Si:H
passivation layers were optimized.Finger width as low as 16 m has been
achieved by the optimization of the screenprinting method for low-
temperature Ag pastes.
As an alternative, a copper electroplating method without
photolithography has been created.Hotmelt can be used for inkjet
printing to create 25-mm-wide, extremely conductive fingers.This
method was tested under pilot production circumstances using SHJ
cells , and the results showed great cell performance (a median
efficiency of 22.3%) and good repeatability. Eventually, SHJ solar cells
made with industry-compatible procedures demonstrated efficiencies
up to 23.1% on large-area devices and up to 23.9% on 4 cm2 devices
using the new passivated contacts and screenprinting technology. With
the newly developed low-temperature passivated contacts, state-of-
theart passivation levels have been attained, as shown by minimum
carrier lifetimes above 50 ms on sparsel y doped wafers and close to 18
ms on actual SHJ solar cell precursors.Lowtemperature metallization
methods are necessary to be compatible with such passivated
connections [1],but We address hydrogenated polycrystalline silicon
(poly-Si) and hydrogenated amorphous silicon (a-Si:H) thin layers paired
with an ultrathin silicon oxide layer to form silicon heterojunction solar
cells with carrier-selective contact. In c-Si front-back contacted (FBC)
and interdigitated back contacted (IBC) solar cells with various thermal
budgets, the use of carrier-selective contacts is demonstrated. the
creation of c-Si solar cells with excellent efficiency at Delft University of
Technology. Using various topologies, such as poly-poly, PeRFeCT,
hybrid, and IBC solar cells, we implement the first high thermal budget
poly-Si carrier-selective passivating contacts. We offered tactics to
boost effectiveness. IBC polySi solar cell efficiency is 23.0%, which is the
highest [2],and photoconductance tester. The mea surements were
performed in either the Generalized (1/64) or Transient modes,
depending on the range of τef f being measured. The samples were
then annealed in a muffle furnace at 450 °C. Saturation current density
J0, implied open-circuit voltage iVoc, and Sef f of the samples were
extracted,The silicon heterojunction solar cells' amorphous silicon
layers absorb light in the solar spectrum's short wavelength area,
reducing the device's generation current. The following procedure was
used to deposit the films of MoOx and Al2O3. Initially, a 2 M
hydroflouric (HF) acid solution was used to remove the native oxide
from weakly doped (100 -cm), (100) n-type float-zone c-Si wafers that
were 300 m thick. The next step involved growing a thin SiOx layer (1
nm) in a UV-Ozone cleaner using methods mentioned in earlier work.
This was carried out to promote effective ALD Al2O3 development. The
Al2O3 and MoOx layers were subsequently deposited at a substrate
temperature of 160 °C in a thermal ALD reactor (CtechNano, Play
Series). Trimethylaluminum (Al(CH3)3, TMA) and ozone O3 pulses were
alternated in the ALD procedure to create Al2O3.To achieve an Al2O3
thickness of approximately 1 nm, this was repeated 11 times. To
incorporate more hydrogen into the film, a forming gas pulse (5% H2,
95% N2) was injected following the O3. Using alternate Mo(CO)6 pulses
followed by an O3 pulse, the 4 nm MoOx deposition was carried out
[26] utilizing the techniques outlined in earlier research. Spectroscopic
ellipsometry (M2000, JA Woollam®) was used to confirm the target film
thicknesses for Al2O3 and MoOx. Using ultraviolet photoelectron
spectroscopy, we evaluated the work function of the ALD MoOx layer
(UPS). He I (21.22 eV) excitation was used as the light source, and
samples were biased at -30.0 V to examine the low-energy secondary
cutoff. . By extrapolating the linear portion of the secondary cutoff to
zero intensity and deducting this energy from the He I ionization
source, the value of was calculated. Using a Sinton WCT-120
photoconductance tester, the effective carrier lifetime (ef f) vs injection
level (n) of each sample was determined shortly after the Al2O3
deposition. Depending on the range of the effect being investigated,
the measurements were either made in the Generalized (1/64) or
Transient modes. The samples were then heated to 450 °C in a muffle
furnace for annealing. The ef f versus n data were used to get the
saturation current density J0, implied open-circuit voltage iVoc, and Sef
f of the samples. . Using the extended TLM, the c of the Al2O3/MoOx
contact stack was measured on 1-cm p-type c-Si wafers (ETLM).
Because there was no emitter in the measurement sample, the ETLM is
an extension of the traditional TLM and corrects for the two-
dimensional route that the current took during the measurement [27].
Because there isn't a TCO in the stack and the Al2O3/MoOx films are so
thin, lateral transfer between TLM pads happens through the wafer.
This guarantees a precise measurement of c. In conclusion, we have
successfully deposited 6.21 eV work function MoOx (molybdenum
oxide) via ALD [3], and By using the narrow-base approximation to
simulate perfect solar cells, it is possible to enhance the state-of-the-art
parameters on the limiting efficiency for crystalline silicon solar cells
under one sun irradiation at 25 °C. We also took into account bandgap
narrowing, which was not previously discussed in relation to efficiency
constraint. A 110-m-thick, silicon solar cell built of undoped silicon has a
maximum theoretical efficiency of 29.43% according to the new
estimates given in this paper[4],but Think about how the solar module's
operation is affected by temperature and insolation. The temperature
goes up. The authors have created a model of an autonomous solar
power plant using the Matlab Simulink application. The relationship
between the heating temperature of solar modules and their
operational efficiency is taken into account by the model. The model
offers the choice of solar module brands, quantity of modules, and
circuits for connecting them. The appropriate current and voltage
characteristics are automatically determined depending on the type of
solar module. The battery connections to the solar modules are charged
when the model is in operation, and the inverter converts DC to AC.
Several variables are taken into consideration while building solar
power plants, including the installatio n site, annual sun insolation, tilt
angle, and quantity of solar modules, as well as the ambient
temperatur e, shading, and natural cooling of modules.The
effectiveness of a solar power plant is directly correlated with the
number of solar modules installed . To boost the effectiveness of solar
power plants, specific attention should be paid to the detrimental
effects of operating solar modules at higher temperatures and the
effectiveness of converting solar energy into direct current[5], .

Refrenc

[1] P. Jain, A. Gupta, N. Kumar, G. P. Joshi, and W. Cho, “Performance Evaluation of Cooperative
OMA and NOMA Systems in 6G Deployment Scenarios,” Sensors, vol. 22, no. 11, 2022, doi:
10.3390/s22113986.