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Abstract—This paper presents a theoretical analysis of both utility assessment and utility control, with the maximisa-
harmonically-terminated high-efficiency power rectifiers and ex- tion of utility as the governing principle. Utility management
perimental validation on a class-C single Schottky-diode rectifier has been used to help influence the goals and objectives
and a class-F−1 GaN transistor rectifier. The theory is based
on a Fourier analysis of current and voltage waveforms which of education, with an emphasis on maximising utility and
arise across the rectifying element when different harmonic promoting efficient usage.
terminations are presented at its terminals. An analogy to In light of the challenges confronting the publishing in-
harmonically-terminated power amplifier theory is discussed. dustry, utility management has emerged as a key concept for
From the analysis, one can obtain an optimal value for the DC article management. By analysing and managing the effective
load given the RF circuit design. An upper limit on rectifier
efficiency is derived for each case as a function of the device on- use of articles, utility management can assist in addressing
resistance. Measured results from fundamental frequency source- issues such as the lack of multi-level and multi-regional con-
pull measurement of a Schottky diode rectifier with short-circuit tent, the proliferation of substandard and offensive material,
terminations at the second and third harmonic are presented. and the lack of comprehensive data on book sales, reading
A maximal device rectification efficiency of 72.8% at 2.45 GHz patterns, and citations. It can also aid in the production and
matches the theoretical prediction. A 2.14 GHz GaN pHEMT
rectifier is designed based on a class-F−1 power amplifier. The dissemination of original academic texts in Mandarin and other
gate of the transistor is terminated in an optimal impedance languages.
for self-synchronous rectification. Measurements of conversion In this term paper, we will examine in greater depth
efficiency and output DC voltage for varying gate RF impedance, the concept of utility management, including its theoretical
DC load and gate bias are shown with varying input RF power at foundations, practical applications, and prospective limitations.
the drain. The rectifier demonstrates an efficiency of 85% for a
10 W input RF power at the transistor drain, with a DC voltage In addition, we will investigate case studies and examples of
of 30 V across a 98 Ω resistor. utility management in action, including how it has been used to
address some of the challenges facing the publishing industry.
Summary of the paper The purpose of this analysis is to provide a comprehensive
overview of utility management and its potential to enhance
the efficient use of articles and other products.
I. I NTRODUCTION
and the utility function can serve as a primary method for its effectiveness, but it can still be determined based on
evaluation and become an essential part of utility management. use variables.
The Bellman equation in utility functions, which features • To optimise the quantity of utilisation at each stage, it is
multi-stage decision-making under uncertainty modeling, is possible to reduce the multivariate of total use behaviours
particularly suited to evaluating the collection and use of books to a single variable function with time t. This is due to
in library management. the fact that the quantity of preservation is not directly
The utility management is useful in evaluating the practical proportional to the amount of utilisation. For this purpose,
value of books, which can vary by region. To achieve this, a an exponential relationship can be postulated.
new mathematical model was proposed by incorporating the
y(x, t) = Ke−ax + c t (K ̸= 0, a ̸= 0)
(10)
Bellman equation,
Taking partial differential with respect to time
U (x) = max [U (x0 , y0 , t)]
nP0<t≤∞ o (9) Ke−ax + c = 0 (11)
n r
+ max βU x (te ), yj (t), t
0≤te ≤∞ j=1 j 1 −c
x = − . ln (12)
a K
The equation (9) for the utility function consists of two terms:
the basic utility U (x0 , y0 ) and the factor utility U (xrj , yj ), Here the amount of the preservation is x =
both contributing to the optimal utility value U (x). The basic (x1 , x2 , x3 , ..., xn ), which the n is places of the preser-
utility of books reflects their inherent and heritage value, with vation, the a is species of books, the x is copies, and ax
the collection time (t = te ) determining the initial state of all is the total copies of every species.
books. The factor utility, on the other hand, is uncertain and • By taking the partial derivative with respect to U (xj ),
varies across different library collections, with the substitution ∂U (x) 1
elasticity constant (r) determining the level of uncertainty. = (13)
∂U (xj ) β
The β parameter, which is less than one, represents the
discount factor for the use effect by readers. In the future, the discount factor β can be considered as a practical
book purchases can be optimized using the HJB equation in utility factor, such as the book usage factor (BUF), which
decision-making, while the preservation variable (xj ) and the can be obtained through empirical data.
use variable (yj ) by readers are discrete random variables h i−1
∂U (x)
BU F = ∂U
that are dependent on the certain value of preservation (x) (xj )
and time (te ). The factor utility can be further categorized (14)
into collection-related utility, which includes loan, download checkout number of one kind books
= total checkout number of same class book
within the network, guided reading, recommendation, com-
munication, and display, among others. On the other hand, • The total usage of books can be simplified to a single
there is utility that is not related to the collection, such as variable that is a function of time and the book usage
references, reviews, and awards. If A is the quantity matrix half-life. This is shown in the following equation:
of preservation, and B is action matrix of the usage, then dx
r= = kxn
U = |A|.|B| dt
Now, dx
dt = − n
x = (x1 , x2 , x3 , ..., xn ) kx
Z t Z x
a = (a1 , a2 , a3 , ..., an ) dx
dt = −
y = (y1 , y2 , y3 , ..., yn ) 0 x0 kx
For n = 1, at t = 0, the total amounts of checkout books
Where x denotes all the species of book distributed vector, is x0
a denotes volume quantity in the preservation and y denotes
1
usage vector, when collected time t = te , then utility time t = − [ln x − ln x0 ]
t(> te ) is the use time of readers. The factor utility of books k
x
is set U = U (xr , y, t) where the r is constant. −kt =
x0
According to management effect, ∆U P = |U0 (x, y0 , T ) −
U (xj , yj , t| ≤ ϵ. When t ≤ t0 , A = xj aj . And when x = x0 e−kt
te < t ≤ T , actual usage quantity = ym (x) ln 2
T 21 = (15)
Let S(y) be a usage function. Then U (ym ) = B. Since k
|S(y) − B| < ϵ, it shows that limy→ym S(y) = B. Which The T 21 as BUHL and k as a decay constant in (15), here
implies limy→ym U (y) = U (ym ) exists an an extreme value k can be identified as a total number of loan-able volumes
in the factor utility. Now, deriving some explicit functions in the library.
• If the maximum value of the overall factor utility • When making decisions, individuals aim to maximize
U (xrj , yj ) is 1, then the discount factor β is applicable their expected utility, which is a measure of their satis-
and can be artificially set as a utility weight. However, if faction or benefit. The utility function is not necessarily
a different value is selected, the discount factor β loses based on the maximum benefits or usage, but rather on
MCL361, ASSIGNMENT-1 4
the maximum value of expected utility or preference. In produce synthetic utility. This evaluation takes into consider-
cases where the satisfaction u is a function of the usage ation the management factors that can predict various factors
amount y, the utility function has a first derivative equal for maximum utility.
to zero and a second derivative less than zero. The risk
aversion constant a can be used to express the function In the library application, utility management can improve
as u(y) = y a , and the use variable consists of different the design of methods for a large amount of data, such as new
kinds of utilities. The calculation may omit or disregard digital literature resources. In high-speed all-optical networks
some minimum utility values, such as when some utility and on cloud resources service platforms, data storage utility
values gain the maximum value. The use risk may be has been given the method on resource allocation and service
replaced by another risk aversion constant α, which is management. The evaluation indexes used in needs analysis
smaller. and the regional public scheme of literature resources have
• The factor utility is of substitution. If the r denoted a been proposed for independent, characteristics, and dispersible
substitution elasticity coefficient literature. This management mode will be carried out through
unified management of the third party data trusteeship, pro-
∆yi ∆yj
r= / (16) curement, processing, storage, and logistics. The public man-
xi xj agement and user access service method will be carried out
The substitution elasticity constant r shows that the use for independent literature.
quantities of paper books xi and electronic books xj are
different at a particular time. In the past, paper books The data resource will realize the multipoint distribution
were more commonly used than electronic books, but and storage according to the configuration principle of read
currently, their usage is almost equal, and sometimes quantity to copy and transfer and smooth and concise multi
electronic books have even surpassed paper books, caus- points to multi points as the service goal. The primary technol-
ing a decrease in the value of r. When the usage of ogy in strip technology from the start of data storage format.
electronic resources xj increased, their use quantity ∆yj Data format will be converted from a single-band storage
remained the same, while some paper books xi were technology to multi-band storage now and put forward specific
removed from the collection, leading to an unchanged design requirements for cloud storage by calculating mode.
use quantity ∆yi . Consequently, the value of r increased, The system can automatically statistically analyze the reading
and this resulted in more readers being interested in paper data use quantity as soon as the data is memorized. It can
resources. Therefore, readers choose literature resources complete data migration, replication, and backup according to
based on their preference for one type over another. the analysis results that have realized multi-points to multi-
• In order to measure the total utility U of a collection of points read request.
articles, we need to consider the quantity and species of
The utility management has been applied to books, and it
articles used within a certain time frame. The utility time
can get rid of the dilemma between library and book supply.
T is the duration between the starting time t0 and ending
It also provides a measure model for the traditional book
time tn , and the total utility U is affected by the sum
evaluation or assessment and provides an optimal path for
total K of articles used and the quantity y of each species
the effective preservation of cultural resources and full use of
used. A function relationship y = f (x, t) is established
existing resources. Study on the book utility evaluation based
between the use quantity y and time t, and the area
on utility value theory has applied to taking knowledge as a
covered by this relationship represents the total utility
carrier. It has designed a conversion equation of book loan
U. However, since different articles have different usage
standards for consistent statistical data and has proposed the
behaviors and each usage quantity contributes differently
book usage factor as a utility evaluation method that judges
to the total utility, we need to assign using weights β
readers’ learned degree from book content and appraised
for different purposes to obtain the total utility equation
utility value of the book. It has expounded book usage half-
U = U (y1 , y2 , ..., yn , K, T ).
life to predict a trend of reading books for some class. All
Pn Pm
U (y1 , y2 , ..., yn , K, T ) = i=1 βi ui j=1 (y, aj , xj , t) mathematical equations need many empirical data to illustrate
s.t. n ≤ m,
P
aj xj = K, and
P
βi = 1 reliability and can set an evaluation early alarm for the using
(17) fluctuation between paper book and e-book in the long run.
degree and appraised utility value of the book. rectifier, the fundamental frequency component of the current
( through the rectifying element I(f0 ) is
∞, v > 0
R(v) = (18) 2Pin
0, v≤0 I(f0 ) = (22)
V (f0 )
where v and i are the instantaneous voltage across and current and, since there is no mechanism by which the rectifier itself
through the rectifying element, respectively. The rectifying can dissipate power (Ron = 0 at this point), all of the
element depicted by R(v) in Fig. ?? can in general be any available input power must be dissipated in the DC load and
nonlinear device that acts as a switch, such as a diode or a the conversion efficiency is 100%. Therefore,
transistor. When a non-zero on-resistance Ron and non-zero
threshold voltage Vtr are taken into account, the resistance of Pin = VDC IDC (23)
the rectifying element is given by
Substituting in (22) and rearranging gives the expression of
( the current at the fundamental input frequency and the DC
∞, v > −Vtr rectified current, which is I(f0 ) = 2IDC . When all available
R(v) = (19)
Ron , v ≤ −Vtr input power is delivered to the rectifier, the RF-DC conversion
efficiency is 100% because the rectifying element is ideal and
The analysis of different classes of power rectifiers will next cannot dissipate power itself. In order for all available input
be analyzed based on the harmonic terminations presented power to be delivered to the rectifier, it is straightforward to
to the rectifying element, and independent of the physical show that the DC load must be set relative to the fundamental
nonlinear device which performs the rectification. frequency load as
RDC = 2Rs (f0 ) (24)
B. Class-C Rectifier Analysis
A harmonic balance simulation of an approximately ideal
In Fig. ??, a sinusoidal microwave power source with rectifier with short-circuited harmonic terminations was per-
voltage magnitude Vs and impedance Rs drives the rectifying formed in Microwave Office® using the SPICE diode model
element of resistance R(v) above. The DC load seen by the with no parasitics (PNIV) as the rectifying element. The device
rectifying element is RDC while the load at the fundamental temperature was set to 1◦ K to approximate an ideal switch.
frequency f0 and successive harmonics is set by the matching The fundamental frequency excitation was set to 1 W at 1 GHz
network. Assume the matching circuit presents Rs (f0 ) to the with the first 200 harmonics terminated in short-circuits. The
rectifying element with all subsequent harmonics terminated in diode was presented with 50 Ω at the fundamental frequency
short circuits. This is equivalent to the harmonic terminations and the DC load was swept from 5 Ω to 200 Ω. The simulated
for a canonical reduced conduction angle power amplifier. data is then normalized to generalize the simulation results.
This class is useful for Schottky diode rectifiers because these The ideal time-domain current and voltage waveforms across
diodes have nonlinear junction capacitance. Short-circuiting the diode are shown in Fig. 1 with the RF-DC conversion
the harmonics fixes the harmonic terminations at the intrinsic efficiency as a function of RDC /Rs (f0 ) for varying rectifier
diode by shorting this junction capacitance. on-resistance shown in Fig. 2. It is clear that the mechanism
When the incident RF voltage at the ideal rectifier swings of operation in the ideal case agrees with the theory presented
negative, it is clipped at zero given (18). The enforced har- above. The reduction in RF-DC conversion efficiency when
monic terminations force the voltage waveform to contain only the DC load is not set according to (24) is due to impedance
a DC and fundamental frequency component. Therefore, a DC mismatch, and is given by
component must be produced by the rectifying element such 2
that the voltage waveform maintains its sinusoidal nature. The RDC − 2Rs (f0 )
η =1− (25)
voltage across the rectifying element can now be expressed as RDC + 2Rs (f0 )
1.0
must sum to the DC component, and the current is given by
v(θ) [V]
(
0.8 0, 0≤θ<π
i(θ) = (29)
0.6 2IDC , π ≤ θ < 2π
0.4 The DC component of the current waveform Fourier expansion
is found to be
π
0.2 IDC = I(f0 ) (30)
i(θ) [A]
4
0.0 The DC load consistent with (27) and (29) is given by
-0.2 8V (f0 ) 8
0 50 100 150 200 250 300 350 400 RDC = 2
= 2 R(f0 ) (31)
θ(degrees) π I(f0 ) π
The conversion efficiency, defined as the ratio of the DC
Fig. 1. Ideal normalized voltage (dashed) and current (solid) waveforms power dissipated in the load resistor to the available funda-
for reduced conduction angle half-wave rectifier. The waveforms have been
normalized to their peak values. mental frequency RF power, is evaluated as
60
function of RDC /Rs (f0 ) was simulated in Microwave Office®
for varying rectifier on-resistance and is shown in Fig. 3. The
40
harmonic balance settings were identical to those used for the
On Resistance = 0 class-C rectifier above. The peak efficiency as a function of
20 on-resistance is higher than for the class-C rectifier, although
On Resistance = 4% of Rs(f0)
On Resistance = 10% of Rs(f0)
the efficiency degrades more quickly when the non-ideal DC
0 load is applied.
0 0.5 1 1.5 2 2.5 3 3.5 4 The waveforms including parasitic on-resistance and thresh-
RDC / Rs(f0)
old voltage are next investigated assuming the rectifier
impedance from (19). The time domain voltage and current
Fig. 2. Simulated efficiency of reduced conduction angle half-wave rectifier waveforms are approximated as
versus RDC /Rs (f0 ) for varying rectifier on-resistance. (
Vmax sin θ, v(θ) > −Vtr
v(θ) = (33)
−Vtr − Imax Ron , v(θ) ≤ −Vtr
zero. This condition must be met through the addition of DC (
0, V (θ) > −Vtr
and only even harmonic voltage components, and therefore the i(θ) = (34)
voltage waveform is expressed as Imax , v(θ) ≤ −Vtr
(
2V (f0 ) sin θ, 0 ≤ θ < π
v(θ) = (27) 100
0, π ≤ θ < 2π
80
A Fourier expansion of (27) expresses the DC component
of the voltage waveform as
Efficiency (%)
60
2V (f0 )
VDC = (28)
π 40
In the first half of the RF cycle, the current through the On Resistance = 0
20
rectifying element is zero, given (18). This condition is met On Resistance = 4% of Rs(f0)
through the addition of a DC current and odd harmonic current On Resistance = 10% of Rs(f0)
components. With the current direction as in Fig. ??, the 0
0 0.5 1 1.5 2 2.5 3 3.5 4
DC component of the current must be positive. Therefore, RDC / Rs(f0)
in the first half of the RF cycle, the remaining harmonics
must sum to a constant value equivalent to the negative of the
Fig. 3. Simulated efficiency of class-F−1 rectifier versus RDC /Rs (f0 ) for
DC component. Since the function which is the sum of the varying rectifier on-resistance.
remaining harmonics is odd, the second half of the RF cycle
MCL361, ASSIGNMENT-1 7
1.0 with α = Vmax arcsin VVmax tr
+ π2 + k VVmax
tr
.
0.8 In the case where Ron is zero, (44) simplifies to
0.6 π2
Imax = Pin (45)
0.4
kVmax arcsin VVmax
tr
+ π
2 + k VVmax
tr
0.2
and Vtr = 0, therefore
0.0
2πPin
Imax,ideal = (46)
-0.2 Vmax
0 50 100 150 200 250 300 350 400
θ(degrees) Now that Imax is fully expressed given known rectifier
parameters, VDC and IDC , V (f0 ) and I(f0 ) may be calcu-
Fig. 4. Non-ideal class-F−1 voltage (solid) and current (dashed) waveforms,
normalized to their peak respective values. lated, and from this, the DC load and the load at fundamental
frequency determined from the following expressions:
MCL361, ASSIGNMENT-1 8
Z0 = 135 Ohms
1.0
Swp Max
0.8
VDC 77.6433
RDC = (47)
6
0.
IDC
0
2.
p1: Efficiency = 60.0 p5
4 p3 p6
V (f0 ) bv 0.
p2: Efficiency = 62.5
p2 3.
0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
efficiency is given by
PDC VDC IDC Fig. 5. Source-pull contours with available input power to the diode set to
η= = (49) 6 dBm. The impedance is referenced to the junction capacitance of the diode,
Pin Pin therefore the lead inductance of the package has been compensated for. Setting
RDC to 1080 Ω was found to result in the optimal efficiency for this input
power. The highest efficiency of 77.6% is obtained at Zp6 = (68 + j245)Ω
D. Design example based on class-F−1 theory with VDC =1.82 V.
To understand the usefulness of the presented theory, as-
sume the rectifying element has the following parameters:
Vmax = 10 V, Ron = 5 Ω, Vtr = 0.7 V and P (f0 ) = 1 W. 75
First, (44) is used to calculate Imax = 456.7 mA. Next, the
DC voltage and current are evaluated using (36) and (39), 70
respectively, to give VDC = 1.75 V and IDC = 218.2 mA.
The fundamental frequency voltage and current Fourier co-
65
Efficiency (%)
efficients are then calculated to be V (f0 ) = 6.896 V and
I(f0 ) = −290 mA, respectively. The DC and fundamental - VDC +
60
frequency resistances are then calculated using (47) and (48)
to be RDC = 8.02 Ω and R(f0 ) = 23.77 Ω, respectively. The 0 dBm
efficiency is then calculated using (49) to be η = 38.18 %. 55 2 dBm
2f0 Short
If the input power is selected as 0.1 W rather than 1 W, the f0 4 dBm
RFIN Diode
50
Match 6 dBm
resultant efficiency is 72.43 % instead. A specific rectification
8 dBm
device will always have an approximate input drive level at
3f0 Short 10 dBm
which it can be most efficient, just as with power transistors in 45
200 400 600 800 1000 1200
power amplifiers. To maximize efficiency, the goal is always to DC Load (Ω)
minimize the amount of power dissipation in the on-resistance
of the rectifying element and maximize the power dissipated Fig. 6. RF-DC conversion efficiency versus DC load for fixed available
in the DC load resistor. input powers with 0.6 dB matching network loss de-embedded. The maximum
efficiency of 72.8% occurred at 8 dBm with RDC = 742 Ω and VDC =1.91 V,
which is lower than the 1080 Ω found during source-pull. However, the effi-
IV. S CHOTTKY-D IODE C LASS -C R ECTIFIER ciency at 1080 Ω is 69.9% which is very close to the peak value.
The Skyworks SMS7630 Schottky diode in the SC-79 pack-
age was selected for the half-wave rectifier. Source-pull was
performed at 2.45 GHz with 0-10 dBm available input power size and allow tunability. The reduction in efficiency relative
for various DC loads in order to identify the combination to the source-pull measurements is due to the matching circuit
of input power, fundamental load and DC load resulting in not presenting the ideal impedance found during source-pull.
highest efficiency. The best case occurred at 6 dBm input The class-C rectifier can be applied to improving the ef-
power, with the source-pull contours being shown in Fig. 5. ficiency of a wireless powering reception device as demon-
The on-resistance of the SMS7630 is 20 Ω with the optimal strated in [1] with a dual-linearly polarized patch rectenna,
DC load of 1080 Ω. Therefore Ron is approximately 2% of with a rectifier circuit for each polarization. In this circuit, the
RDC , which in theory is 4% of Rs (f0 ). From Fig. 2, a peak first 5 harmonics are shorted and the impedances are validated
efficiency of 87% occurs with infinite harmonic terminations, by calibrated measurements and are presented in [1].
therefore the achieved 77.6% is very reasonable considering
only the 2nd and 3rd harmonics were explicitly terminated.
V. T RANSISTOR C LASS -F−1 R ECTIFIER
Measurements of a rectifier designed using the source-pull
data show a maximum RF-DC conversion efficiency of 72.8% To prove experimentally the duality between harmonically
when matched to 50Ω, obtained after the 0.6 dB matching terminated PAs and rectifiers, a high-efficiency class-F−1 PA
network loss is de-embedded. The fabricated rectifier and DC was designed, measured first as an amplifier, and then as a
load sweep measurements are shown in Fig. 6. Open circuit rectifier. In the rectifier measurements, RF power is input into
shunt stubs are used to present short-circuit terminations at the drain which is unbiased. The gate is terminated in a vari-
the second and third harmonic. A shunt capacitor is used for able impedance and biased close to pinch-off. Measurements
presenting the fundamental frequency impedance to reduce of efficiency and DC voltage are performed in time domain
MCL361, ASSIGNMENT-1 9
as a function of input RF power, gate RF load, gate bias and signal measurement instrument is a VTD SWAP four-channel
drain DC load. receiver [3]. In order to acquire time domain waveforms
at the reference plane, an 8 error term model calibration
A. Circuit design similar to the one performed for LSNA (Large Signal Network
Analyzer) measurements is applied. After an absolute VNA-
A 2.14-GHz power amplifier, pictured on Fig. 7, is designed
like calibration [4], the RF voltage and current waveforms at
using the Triquint TGF2023-02 GaN pHEMT [2]. Class F−1
the input (V1 and I1) and at the output (V2 and I2) of the DUT
harmonic terminations are implemented at the second and third
are measured at the coaxial reference plane. In this case, the
harmonic. The performance of the PA, illustrated in Fig. 8, was
RF input is the drain port of the PA, while the RF output is
characterized at 2.14 GHz with a drain voltage bias of 28 V
connected to the gate port. Thus, performing a load pull on
and a bias current of 160 mA. The PA exhibits a PAE of 84%
this device consists of varying the load at f0 at the RF gate
with an output power of 37.6 dBm and a gain of 15.7 dB under
port of the PA with a passive tuner. This kind of measurement
3 dB compression. The same PA design was used for rectifier
is similar to large signal characterization of switch devices
measurements as shown in Fig. 9. The PA is connected to
recently reported in [5], [6]. The gate DC path is connected to
an input RF source at the drain, with the drain supply dis-
a power supply so the gate bias can be varied. The drain DC
connected. The gate terminal is biased, and connected to an
bias is the output of the rectifier and is connected to a variable
impedance tuner, converting the two-port transistor PA to a
resistance RDC , and the DC voltage across it is measured with
one-port rectifier, corresponding to the generalized schematic
a voltmeter. The DC current is then found from the value of
of Fig. ??.
RDC from (47). During the measurement, several parameters
are varied systematically: the RF load impedance applied at
the PA gate port Zg (f0 ) = Vg (f0 )/Ig (f0 ); the resistor in
Gate Drain the DC drain output RDC ; and the gate bias voltage VGS .
The conversion efficiency of the rectifier and the DC power
delivered at the drain output of the rectifier PDC = VDC · IDC
are measured as these parameters are varied, and as a function
of input power at the drain port Pin (f0 ).
Drain Gate
R DC VGS Tuner
RF source
I1 I2
Die Harmonic Terminations PA
V1 V2
Fig. 7. Photograph of the class-F−1 power amplifier, working at 2.14 GHz
and presented in [2]. Attenuators
Sub-sampling
B. Measurement setup
Filter
The class-F−1 power amplifier described above is fully
characterized in large signal in a rectifier configuration with
SWAP ADC
the setup shown in Fig. 9. The commercial time-domain large
Fig. 9. Time-domain non-linear rectifier measurement block diagram. The
40 SWAP [3] performs sampling of current and voltage and the calibration refers
the sampled quantities to the reference planes at the DUT. The drain output
35 90 DC resistance RDC , the gate bias VGS and the gate RF impedance Zg are
Pout (dBm)
25 60
PAE (%)
20 45
The measurements of the rectifier are performed in self-
15 30 synchronous mode, i.e. there is no input RF power incident
10 15
externally into the gate port of the PA, unlike in previous
transistor rectifier work [7], [8]. The following parameters are
5 0 varied in order, while keeping the other parameters constant
-15 -10 -5 0 5 10 15 20 25
Pin (dBm) and sweeping the input RF power at the drain port, and the
results are described in the same order:
Fig. 8. Large-signal measurements performed on the class-F−1 power am-
plifier at f0 = 2.14 GHz, VGS = −3.8 V and VDS = 28 V 1) RF impedance at the gate, Zg ;
2) load resistance at drain bias output, RDC ;
MCL361, ASSIGNMENT-1 10
90
3) gate DC bias, VGS . 80
Z g (f0 )
(a) (b)
Efficiency (%)
The gate load-pull was performed to determine the optimum 70
impedance for maximum efficiency with a constant resistive 60
70 30
70 30
Drain VDC (V)
-3.5
60 -3.8
ACKNOWLEDGMENT
50 20 -4.1 The authors would like to thank Dr. David Root and Dr.
Jean-Pierre Teyssier at Agilent Technologies for the loan of the
40 -4.4
time-domain nonlinear measurement equipment and TriQuint
30 10 -4.7 Semiconductor for the donation of the transistors.
20 -5
10 0 R EFERENCES
10 15 20 25 30 35 40 45
[1] M. Roberg, E. Falkenstein, and Z. Popovic, “High-efficiency
Pin (dBm)
harmonically-terminated rectifier for wireless powering applications,”
in IEEE MTT-S International Microwave Symposium Digest, Montréal,
Fig. 14. Measured conversion efficiency and drain DC voltage versus input 2012.
power for several DC gate voltage biases. For this data, RDC = 58Ω and [2] M. Roberg, J. Hoversten, and Z. Popović, “GaN HEMT PA with over
Zg (f0 ) = (230 + j10) Ω. 84% power added efficiency,” Electronics Letters, vol. 46, no. 23, pp.
1553 –1554, 11 2010.
[3] VTD, “Swap-x402 data sheet.” [Online]. Available: http://www.vtd-rf.
com/pdf/productpresentation.pdf
[4] J. Verspecht, “Calibration of a measurement system for high frequency
VI. C ONCLUSION nonlinear devices,” Ph.D. dissertation, Vrije Universiteit Brussel (VUB),
1995.
In summary, this paper addresses high-efficiency power [5] G. Callet, J. Faraj, O. Jardel, C. Charbonniaud, J.-C. Jacquet,
rectifiers designed with harmonic terminations at the RF input, T. Reveyrand, E. Morvan, S. Piotrowicz, J.-P. Teyssier, and R. Quéré,
in analogy to high-efficiency power amplifier design with “A new nonlinear hemt model for algan/gan switch applications,”
International Journal of Microwave and Wireless Technologies, vol. 2,
harmonic terminations at the output. The applications of such no. Special Issue 3-4, pp. 283–291, 2010.
power rectifiers include wireless power beaming [9], recycling [6] J. Faraj, G. Callet, O. Jardel, A. El-Rafei, F. De Groote, R. Quéré, and
power in high-power circuits [10] and ultra-fast switching J. Teyssier, “Time domain large signal characterization of self-biasing
phenomena in switch-mode algan/gan hemts,” in 74th ARFTG Sympo-
integrated DC-DC converters with no magnetics [11]. sium, International Microwave Symposium Digest, Montréal, Canada,
The theory for an ideal rectification element is based on 2012.
Fourier analysis and establishes the basic design parameters [7] M. Nieves Ruiz, R. Marante, and J. A. Garcia, “A class e synchronous
rectifier based on an e-phemt device for wireless powering applications,”
such as the relationship between output DC resistance and in IEEE MTT-S International Microwave Symposium Digest, Montréal,
impedance at the fundamental frequency at the rectifier input 2012.
MCL361, ASSIGNMENT-1 12
[8] M. Kazimierczuk and J. Jozwik, “Analysis and design of class e zero- Erez Avigdor Falkenstein (S’07), Haifa, Israel in
current-switching rectifier,” Circuits and Systems, IEEE Transactions on, 1979. He earned a “Handesaie” degree (associate
vol. 37, no. 8, pp. 1000 –1009, aug 1990. degree) in electronics from Amal Handesaim School
[9] W. Brown, J. Mims, and N. Heenan, “An experimental microwave- Hadera, Israel in 1999. From 1999 to 2003 he served
powered helicopter,” in IRE International Convention Record, vol. 13, in the Israel Defense Force as part of a technological
mar 1965, pp. 225 – 235. unit. He has been at the University of Colorado
[10] X. Zhang, L. Larson, P. Asbeck, and R. Langridge, “Analysis of power at Boulder 2004 – 2012. He received concurrent
recycling techniques for rf and microwave outphasing power amplifiers,” MS/BS degrees in Electrical engineering 2010 and
Circuits and Systems II: Analog and Digital Signal Processing, IEEE a Ph.D 2012 from the University of Colorado at
Trans. on, vol. 49, no. 5, pp. 312 – 320, may 2002. Boulder. Since 2007 he has been involved with re-
[11] S. Djukic, D. Maksimovic, and Z. Popovic, “A planar 4.5-ghz dc-dc search as part of the active antenna group. Research
power converter,” Microwave Theory and Tech., IEEE Trans. on, vol. 47, emphasis: far field wireless powering for low power densities. Interests include
no. 8, pp. 1457 –1460, aug 1999. Antenna design and characterization, modeling and measurement of nonlinear
[12] M. Roberg, “Analysis & Design of Non-Linear Amplifiers for Efficient devices at microwave frequencies and power management. He is currently
Microwave Transmitters,” Ph.D. dissertation, University of Colorado at employed at Qualcomm, Incorporated, Boulder, CO.
Boulder (CU-Boulder), 2012.
[13] E. Falkenstein, M. Roberg, and Z. Popovic, “Low-power wireless power
delivery,” Microwave Theory and Techniques, IEEE Transactions on,
vol. 60, no. 7, pp. 2277 –2286, july 2012.
Zoya Popović (S’86-M’90-SM’99-F’02) received
the Dipl.Ing. degree from the University of Belgrade,
Belgrade, Serbia, Yugoslavia, in 1985, and the Ph.D.
degree from the California Institute of Technology,
Pasadena, in 1990. Since 1990, she has been with
the University of Colorado at Boulder, where she
is currently a Distinguished Professor and holds
Michael Roberg (S’09) received the B.S.E.E degree the Hudson Moore Jr. Chair with the Department
from Bucknell University, Lewisburg, PA, in 2003, of Electrical, Computer and Energy Engineering.
the M.S.E.E. degree from the University of Pennsyl- In 2001, she was a Visiting Professor with the
vania, Philadelphia, in 2006, and the Ph.D. degree Technical University of Munich, Munich, Germany.
from the University of Colorado at Boulder in 2012. Since 1991, she has graduated 44 Ph.D. students. Her research interests
From 2003 to 2009, he was an Engineer with Lock- include high-efficiency, low-noise, and broadband microwave and millimeter-
heed Martin–MS2, Moorestown, NJ, where he was wave circuits, quasi-optical millimeter-wave techniques, active antenna arrays,
involved with advanced phased-array radar systems. and wireless powering for batteryless sensors. Prof. Popović was the recipient
His current research interests include high efficiency of the 1993 and 2006 Microwave Prizes presented by the IEEE Microwave
microwave PA theory and design, microwave power Theory and Techniques Society (IEEE MTT-S) for the best journal papers
rectifiers, MMIC design, and high-efficiency radar and the 1996 URSI Issac Koga Gold Medal. In 1997, Eta Kappa Nu students
and communication system transmitters. He is currently employed by TriQuint chose her as a Professor of the Year. She was the recipient of a 2000
Semiconductor - Defense Products and Foundry Services in Richardson, TX Humboldt Research Award for Senior U.S. Scientists of the German Alexander
working on wideband high efficiency GaN MMIC PA design. von Humboldt Stiftung. She was elected a Foreign Member of the Serbian
Academy of Sciences and Arts in 2006. She was also the recipient of the 2001
Hewlett-Packard (HP)/American Society for Engineering Education (ASEE)
Terman Medal for combined teaching and research excellence.