Logic Failure Analysis 65/45nm Device Using

ReI & Nano Scale Probe

S.1. Cho, T.E. Kim, J.K. Hong, J.T. Hong, H.S. Kim, Y.W. Han, S.D. Kwon, Y.S. Oh
{ Samsung Electronics Co., Ltd. Semiconductor Business, System LSI Division, Failure Analysis Group}
{ San #24, Nongseo-Dong , Giheung-Gu, Yongin-City, Gyeonggi-Do, Korea 449-711}
Phone: (+82)10-8985-2117 . Fax: (+82)31-209-5886 . Email: seongjun73@yahoo .com

Abstract-Scan chain failure analysis is more difficult and
complicated compared to memory analysis and analysis of defect
monitoring test element group (DTEG) which has a large area is
also difficult. This paper has verified that various defects of logic
process sub 6Snm device are easily analyzed through Resistive
Contrast Imaging (RCI) and nanoprobe. In addition, MetalS (MS)
bridge defect (Short case) was detected in failure of scan ATPG
(Automatic Test Pattern Generation) which has long failing nets
and by discovering Via4 (V4) open defect (Open case) by Unetch,
it was confirmed that it is possible to analyze high resistance Via
failure. And it was verified that position of Cu line void of metal7
(M7) can be localized at high level metal layer. It is judged that it
will be used usefully in failure analysis sub 6Snm in the future as a
technique utilizing principle of RCI and nanoprobe and also it will
make lots of contributions to improvement of yield
I. INTRODUCTION
Recently, device failure analysis becomes difficult gradually
as device scaling becomes smaller and especially, it is necessary
to research on methods finding out accurately failure
localization in logic circuit having complicate layout & circuit,
multi layer structure, long nets, and low via height. For defect
analysis in this time, principle of RCI (Resistive Contrast
Imaging) was investigated and EBAC (Electron beam absorbed
current, Hitachi) equipment was used. RCI is a scanning
electron microscopy (SEM) imaging mode that generates a
relative resistance map between metal interconnect of CMOS
device or test structure (Fig.I) . RCI generates absorbed current
imaging as a current divider to visualize metal interconnecting
LSI chip for open and resistance failure analysis. [1-5]
EI. ella n Bum Amplln. r
o III. CASE STUDIES
used. It is very important to have ability ofscan failure diagnosis
because scan failure is one of the highest yield loss. [6] Since
scan failure needs not only a process of extracting electrical nets
of electrical defect position but also tracing of position of
physical defect, ability of defect analysis by using nanoprobe
and electron beam of RCI (EBAC, Hitachi) was improved on
this work. The purpose of this paper is to investigate EBAC
condition using RCI method through tests regarding each defect
and to find out a new failure analysis method of BEOL.
(Back-end of Line) sub 65nm process.
II. EXPERIMENTAL METHOD
Measurement specimen has used scan ATPG failure
(Sample 1, Sample2), where defect was generated in
combinational logic connected to scan flip-flop , and open
defect sample ofDTEG (Sample 3) as device less than 65nm. In
case of scan failure, long failing nets which was difficult to
apply SEM inspection that was an existing failure analysis
method, was selected and in case ofDTEG, M7 open defect was
selected. After de-processing up to metal step which will probe
in a physical lapping method, it was probed using nanoprobe
(N-6000, Hitachi) in metal level and DTEG has probed meta18
(M8) pad. After transforming into EBAC mode for RCI,
optimum condition was found out per each defect by using
Acceleration voltage (Vacc, 0-30keV), Beam current (0-30uA),
Condenser lens (0-9), and Aperture lens(1-4). After localizing
points of occurrences of defects alongside of metal line by
comparing to normal highlighted layout using EBAC reaction
image and CAD navigation software, physical analysis was
carried out with SEM (S-4800, Hitachi) and TEM. (Technica,
FEI)

1 GtID
Fig. I Principle of open failure site detection using RCI with nanoprobe [4]
Microelectronic device composes scan chains connected
with registers within logic block and a test method with ATPG is
A. Scan ATPG Failure (Short)
It was extracted failure analysis candidates by processing
diagnosis using ATPG tool after carrying out wafer level test.
As the result of confirming log data of failure analysis
candidates, it was confirmed that sample 1 was a systematic
defect which most of dies have same failure nets. Fig. 2 is the
result of highlighting nets using CAD navigation software and
as length of net was over 1500um and was a total of 6 metals
from metal 1 to meta16. SEM inspection, which is an traditional
method, was difficult and as IDS failure was not accompanied, it
could not localize failure point with emission equipment.

9781-4244-3912-6/09/$25.00 ©2009 IEEE IEEE Proceedings of 16th IPFA - 2009, China

 After de-processing up to metal6 (M6) which was top layer of
suspected failing nets, M6 line was probed with one nanoprobe .
Conditions for obtaining optimum EBAC reaction image after
transforming into EBAC mode are Vacc 17keV, Ebeam current
20uA, Condenser lens 1, and Aperture lens 3 and reaction image
like Fig. 3 was obtained .
By comparing layout image in Fig. 2 and EBAC reaction
image (Fig. 3), unexpected net was detected and a point
expected as M5 short defect was confirmed by carefully
reviewing layout and M5 bridge bridging two nets like Fig. 4
could be found out by using SEM inspection.
Fig. 2 Layout image showing the suspected failing nets for sample I
Fig. 3 EBAC reaction image of the failing net for samplel . Unexpected net
connected to the suspected failing net
Fig. 4 SEM picture showing Metal bridge at metal5 .
9781-4244-3912-6/09/$25.00 ©2009 IEEE
B. Scan ATPG Failure (Open)
Sample2 having scan ATPG failures indicates one suspected
failing net (Fig. 5) and M6 is a top metal in layout tracing. This
test was also probed after de-processing up to M6 just like the
same as short failure.
EBAC condition used Vacc 17keV, Ebeam current 15uA,
Condenser lens 2, and Aperture lens 3 and just like in Fig. 6, it
was confirmed as a point to be connected to meta14 (M4)
through V4 from M5 as the result by analyzing layout review by
discovering a point where EBAC reaction disappeared .
As the result of analyzing a point detected at EBAC using
TEM cross-section, Via4 open defect by Unetch was confirmed
(Fig. 7). As device scaling becomes smaller, Via defect analysis
was not easy by traditional de-processing method due to lower
structural characteristics of via height at 65nm process but in
this test, Via open defect was detected using RCI method.
Fig. 5 Layout image showing the suspected failing net for sample2
Fig. 6 EBAC reaction image of the failing net for sample2
Fig. 7 TEM cross-section picture showing Via open at Via4
IEEE Proceedings of 16th IPFA - 2009, China
C. DTEG Open Failure
Sample3 was tested using Personal Kalos2 tester which can
detect metal open and short using DTEG of serpentine type and
sample with occurrences ofM7 open was selected. It is structure
of M7 serpentine type and pattern size is 4930um * 80um. In
general, DTEG analysis proceeds defect analysis by FIB PVC
(passive Voltage Contrast) after de-processing up to relevant
layer in flat and as large area has a limit in de-processing in flat
with a traditional method and it is difficult to localize in FIB
PVC analysis method.
For localizing position of defect caused M7 open, PAD
probing was carried out at metal8 (M8) and differential mode
using 2 probing was used for increasing detection rate of soft
defects. EBAC conditions were set as Vacc 20keV, Ebeam
current 15uA, Condenser lens 1, and Aperture lens3. Fig. 8 is
EBAC reaction image of M7 seen at M8 and a point where
contrast is changed to dark at the position of open defect was
confirmed. As the result of SEM inspection after de-processing
M8 for suspicious points of existence of defects, Cu line void
(Fig. 9) defect was observed and with this, it was verified that
DTEG with large area was possible to localize at higher layer
using RCI method. Fig. 10 EBAC reaction image of the DTEG for sample4

Fig. 8 EBAC reaction image of the DTEG for sample3 Fig. II SEM picture showing Metal Oxide Bridge at MI.

IV. CONCLUSION

In this paper, for localizing defect point of Cu metal lines,

Fig. 9 SEM picture showin g Cu line void at metal7.
Sample4 is Ml nested pattern and for localizing position of
defect caused M1 open, PAD probing was carried out at M2 and
current mode using 1 probing was used . Fig. 10 is EBAC
reaction image ofMl seen at M2. According to physical failure
analysis, we found Ml oxide bridge at suspicious point.(Fig.ll)
failure analysis was attempted by selecting logic scan ATPG
failure having long failing nets difficult to analyze defect in
de-processing, wet etching, SEM inspection which are
traditional methods, and DTEG with large area. It was found out
that failure localization was possible through RCI method after
probing at metal level using nanoprobe. Image quality became
better as ebeam current was high and as condenser lens was
lower. At this time, aperture lens was fixed at 3. In particular,
RCI analysis method was possible to analyze Open/Short failure
of scan ATPG failure with long failing nets over 1500um and
DTEG open failure was also possible to analyze defects like Via
open failure at higher metal layer. And it is believed that they are
useful for scan ATPG and BEOL failure, which are the highest
yield loss, and are considered as new analysis methods.

9781-4244-3912-6/09/$25.00 ©2009 IEEE IEEE Proceedings of 16th IPFA - 2009, China

 ACKNOWLEDGMENT
The authors would like to thank Dr. Yasuhiro Mitsui for his
advice and discussion.
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