Professional Documents
Culture Documents
Frequency Sensitivity
Device (MHz) (lm2=ng) Advantages Disadvantages
Bulk acoustic Thickness shear mode (TSM) 5–10 1.4 Robust nature, avail- Limited frequency
wave (BAW) ability, high mass range, low q-factor,a
resonators sensitivity fragility during
fabrication
Shear horizontal acoustic 25–200 1.5 Design to operate in __
plate mode (SH-APM) liquid
Surface acoustic Rayleigh 30–300 13.3 Working in gas __
wave (SAW) Shear horizontal surface 30–300 18 __ Higher energy loss in
resonators acoustic wave (SH-SAW) aqueous environment
Love wave 30–300 22.1 High sensitivity __
Flexural plate wave (FPW) 5–20 49 High q-factor, low __
energy loss in liquid
at a low resonant
frequency
a
Q-factor is a dimensionless parameter that compares the energy stored to the rate of energy dissipation. A higher Q indicates a lower rate of energy dissi-
pation. Generally Q is defined as: Q ¼ 2p (Energy Stored)=( Energy dissipated per cycle).
and
0 12
@Cn ðr Þ K2 B 1 C
¼ CM ¼B C (7)
@r 0
K1 d2 þ K2 d1 @ K2 r A
1
K1 d2 þ K2 d1
@Cn ðr Þ K2
¼ CM
0 ¼ 1 þ A1 r þ A1 r 2 þ (8)
@r K 1 d2 þ K 2 d1
2
K2 K2
where A1 ¼ , A2 ¼ 3 ;…
K 1 d2 þ K 2 d1 K 1 d2 þ K 2 d1
Fig. 6 Equivalent circuit of disk resonator and its electrodes For the present purpose of obtaining a linear model for the disk
using to calculate the motional resistance (Rx) resonator, @Cn ðr Þ=@r can be approximated by the first term in
Eq. (8)
requires an expensive fabrication process (such as E-Beam Li-
@Cn ðr Þ K2
thography). However, as mentioned in Sec. 2.3, we propose a CM
0 (9)
method to decrease Rx without making the smaller d0. The idea is @r K 1 d2 þ K 2 d1
to fill the gap space by depositing a dielectric material, such as sil-
icon nitride (Si3N4), using chemical vapor deposition (CVD) pro- With Eqs. (3), (6), and (9), the motional resistance of the reduce
cess. Filling the capacitive gap with silicon nitride helps to gap RCDR is
achieve smaller gap distance in comparison with air gap counter-
parts [11]. A schematic figure of the reduced gap with silicon ðK1 d2 þ K2 d1Þ4 ceq
nitride deposition is shown in Fig. 5. The dielectric material helps Rx ¼ (10)
e20 A2 VP2 K22 K24
to reduce fabrication cost and improve the electrical characteris-
tics of the capacitor at the same time.
An analytical equation is derived and validated with a COM- The obtained results for motional resistance in Eq. (10) are plotted
SOL simulation model to calculate the motional resistance of the in Fig. 7. The dashed line shows the motional resistance of a reso-
reduced gap RCDR with a dielectric material layer. The RCDR nator with initial gap of 2 lm and different thicknesses for Si3N4.
shown in Fig. 1 is replaced with its equivalent electrical circuit as The solid line shows the motional resistance of RCDR without
shown in Fig. 6. any insulating layer (i.e., d2 ¼ 0; d0 ¼ d1), which is used by
The motional resistance of disk resonator can be calculated Clark et al. [11].
using the following equation [28]: As shown in Fig. 7, the motional resistance with 2 lm air gap is
over 500 M-Ohm, for which the output signal is not measurable.
Rx ¼ ceq =ðg1 g2 Þ (3) Making the small gap sizes leads to low level of motional resist-
ance (solid line). However, the motional resistance of the reduced
where ceq is a damping element of the disk identified based on gap (dashed line) is still in the acceptable range while avoiding
Ref. [11]. The Q-factor for calculating ceq can be estimated using the expensive and difficult fabrication processes.
Fig. 8 The motional resistance of the RCDR versus bias volt- 4.1 Constraints for Design Exploration. In addition to the
age at Vac50.1 V; from the top, simulation for air gap, theoreti- two main performance of the RCDR, additional design constraints
cal equation for air gap by Clark et al., Eq. (10) for reduced gap are identified. In our fabrication process, lithography is one of the
and simulation for reduced gap main processes applied, which can achieve trenches and holes
Fig. 10 Kriging model of mass sensitivity based on sampling points obtained from simulation
Given
x ¼ fD; t; SDgð3r~x ¼ 10% of mean sizeÞ
Uncertain design variables (control factors with noise): ~
Deterministic design variables (control factors without noise): x¼fVp, Vac, d2g
Uncertain fixed parameters (noise factor): d0 (ld0 ¼ 2, 3rd0 ¼ 0:2)
FSm: Kriging model for mass sensitivity developed in Sec. 4.2
LNRx: Model for log motional resistance developed in Sec. 3.2
Find
l~x and x
Satisfy
(1) Design space:
lD ¼ 100 þ 3rD; 1000 3rD ; lt ¼ 2 þ 3rt; 40 3rt ; lSD ¼ 2 þ 3rSD; 40 3rsD ;
d2 ¼ ½0:5; 1:5; Vp ¼ ½1; 40; and Vac ¼ ½0:01; 1
(2) Constraints for fabrication limit, dynamic stability, and breakdown voltage
URL lgi
EMIgi ¼ 1; where i ¼ 1; …; 7 ðnumber of constraintsÞ
3rgi sffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
ffi
2
P3 @gi @gi 2 2
URL ¼ 0; lgi ¼ giðl~x ; x; ld0 Þ and rgi ¼ r2x~j þ rd0
j¼1 @~ xj @d0
(3) EMI formulation for the RCDR performances
EM ISm ¼ ðlSm LRLSm Þ=3rSm 1; where LRLSm ¼ 60; lSm ¼ FSm ðl~x Þ, and
vffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
uX
u 3 @FSm 2 2
rSm t rx~j
j¼1
@~ xj
EM IRx ¼ URLRx exp lRx þ 0:5r2Rx =DRxupper 1; where URLRx ¼ 500 106 lRx
¼ LNRx ðlD ; lt ; ld0 ; xÞ; DRxupper ¼ expðlRx Þ expðlRx þ 3rRx Þ and
s ffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi
ffi
@LNRx 2 2 @LNRx 2 2 @LNRx 2 2
rRx ¼ rD þ rt þ rd0
@D @t @d0
Minimize
z ¼ w1 dEM I Sm þ w2 dEM I Rx
where dEM I Sm ¼ 1 EM ISm =EM ISm goal and dEM I Rx ¼ 1 EM IRx =EM IRx goal
lognormal distribution are calculated in a numerical manner. In located behind of that of deterministic optimization, and the per-
our case, the numerical second moment method is a reasonable formances gap between the two design results is much larger at
approach for uncertainty analysis because our system performan- higher mass sensitivity. It is because the two RCDR performances
ces are not highly nonlinear and the standard deviations of the are much more sensitive to the fabrication uncertainty at the
design ables are small enough. This assumption will be validated smaller scale.
in the next section. From the EMI robust design exploration, combinations of the
two performances among the Pareto sets are list in Table 5. The
motional resistances achieved in the design are lower than the
4.4 Design Results and Discussion. For the purpose of com- URL (i.e., 500 M-Ohm). Therefore, it is better to select the higher
parison, we consider two scenarios, the RCDR biosensors w/o mass sensitivity design among the solution sets, which is bold
Si3N4. First, the design exploration results with Si3N4 are illus- faced in the table. The mean of achieved mass sensitivity of the
trated in Fig. 12. As expected, the results of the EMI based robust RCDR biosensors reaches up to 261.2 lm2/ng, which is about five
design (Table 4) are more conservative than those of deterministic times higher than those of existing BAW/SAW sensors. In addi-
optimization (Table 3). The Pareto frontier of the robust design is tion, with 99.9% confidence, it is designed to have the minimum
sensitivity of 253.6 lm2/ng even if fabrication tolerances are the
worst. In case of using a measurement device with lower accu-
racy, the design for lower motional resistance would be the better
selection. The mean of motional resistance may decrease down to
6.484 M-Ohm and the upper bound 14.74 M-Ohm with 99.9%
confidence.
We have discussed the uncertain constraints (from g2 to g5)
due to the limited knowledge in RCDR dynamic stability condi-
tion in Sec. 4.1. We believe that it should be a safer choice to find
a solution with the higher EMI for the uncertain constraints while
selecting the best robust design. The minimum EMIs (i.e., mini-
mum[EMIg2-5]) among the four EMI constraint evaluations at the
Pareto optimum sets are also listed in Table 5. Among the Pareto
optimum sets, minimum[EMIg2-5] at the selected (i.e., bold faced)
RCDR design are the largest; therefore, our selection would be a
safer choice under the potential errors in the dynamic stability
constraints.
In the EMI-based robust design formulation in Table 4, the
uncertainty analyses for the constraints and performances are per-
Fig. 12 Feasible region of deterministic and EMI based robust formed in a numerical manner for efficient design exploration. For
design with Si3N4 layer the nonlinear models (i.e., breakdown voltage constraint, motional
680 32 38 1.30 40 0.01 1.006 59.77 1.765 72.70 60.08 6.484 14.74
680 32 39 1.30 40 0.01 1.007 59.77 1.765 73.29 60.09 6.484 14.74
700 31 36 1.30 40 0.01 1.502 59.60 1.072 74.38 64.81 6.502 14.78
… … … … … … … … … … … … …
110 6 8 1.30 40 0.01 26.68 1.053 3.636 261.2 253.6 221.9 486.0
Mean Lower limit (99.9%) Upper limit (99.9%) Mean Lower limit (99.9%) Upper limit (99.9%)