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Artificial Retina Using Thin-Film Transistors Driven by Wireless Power Supply

Article  in  IEEE Sensors Journal · August 2011


DOI: 10.1109/JSEN.2010.2096807 · Source: IEEE Xplore

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IEEE SENSORS JOURNAL 1

Artificial Retina using Thin-Film Transistors


driven by Wireless Power Supply
Yuta Miura, Tomohisa Hachida, and Mutsumi Kimura, Member, IEEE

 Fig. 1. Electronic photodevices and circuits are integrated on


Abstract—We have evaluated an artificial retina using thin-film the artificial retina, which is implanted on the inside surface of
transistors driven by wireless power supply. It is found that the the living retina at the back part of the human eyeballs. Since
illumination profile can be correctly detected as the output the irradiated light comes from one side of the artificial retina
voltage profile even if it is driven using unstable power source
generated by inductive coupling, diode bridge, and Zener diodes.
and the stimulus signal goes out of the other side, the
This means the feasibility to implant the artificial retina into transparent substrate is preferable. Moreover, since the human
human eyeballs. eyeballs are curved, the flexible substrate is also preferable. It is
possible to make spherical shape by designing a petal-like
Index Terms—Artificial retina, thin-film transistor (TFT), pattern. As a result, the artificial retina using TFTs are suitable
wireless poser supply, implant. for the epiretinal implant on the curved human eyeballs.
Until now, wired power supply has been used to drive the
artificial retina using TFTs to ensure reliable operations.
I. INTRODUCTION However, the wired power supply harms quality of life of the

A rtificial retinas have been ardently desired to recover the


sight sense for sight-handicapped people [1]. Recently,
artificial retinas using external cameras, stimulus electrodes,
sight-handicapped people because of bothersome connection
wires between the artificial retina and external equipments.
Therefore, wireless power supply is requisite to eliminate the
and three-dimensional LSIs have been actively developed for connection wires and to realize complete artificial internal
patients suffering from retinitis pigmentosa and age-related organs to improve the quality of life. In this paper, we have
macular degeneration [2]-[8]. In these cases, electronic evaluated an artificial retina using TFTs driven by wireless
photodevices and circuits substitute for deteriorated power supply. It is found that the illumination profile can be
photoreceptor cells. The implant methods can be classified to correctly detected as the output voltage profile even if it is
four types: epiretinal implant, subretinal implant, driven using unstable wireless power supply.
suprachoroidal stimulation, and transretinal stimulation.
Among these implant methods, the epiretinal implant has II. ARTIFICIAL RETINA USING THIN-FILM TRANSISTORS
features that the image resolution can be high because the The artificial retina using TFTs is fabricated using the same
stimulus signal can be directly conducted to neuron cells and fabrication processes as conventional poly-Si TFTs [11]-[13]
that living retinas are not seriously damaged. and encapsulated using SiO2 in order to perform in corrosive
In our research, we have proposed an artificial retina using enviroments. Although the artificial retina is fabricated on the
thin-film transistors (TFTs) [9],[10], which can be fabricated glass substrate here to confirm the elementary functions, it can
on transparent and flexible substrates. The concept model of be fabricated on the plastic substrate [14]. The artificial retina
the artificial retina fabricated on a transparent and flexible using TFTs is shown in Fig. 2. The retina array includes
substrate and implanted using epiretinal implant is shown in matrix-like multiple retina pixels. Although large contact pads
are located for fundamental evaluation, a principal part is
Manuscript received Month Date, Year. This work was supported in part by
a collaborative research with Seiko Epson Corporation, research project of the 27300 m2, which corresponds to 154 ppi. The retina pixel
Joint Research Center for Science and Technology of Ryukoku University, consists of a photo transistor, current mirror, and load
grant for research facility equipment for private universities from the Ministry resistance. The photo transistor is optimized to achieve high
of Education, Culture, Sports, Science and Technology (MEXT), grant for
special research facilities from the Faculty of Science and Technology of efficiency [15],[16], and the current mirror and load resistance
Ryukoku University, and Grant-in-Aid for Scientific Research from the Japan are designed by considering the transistor characteristic of
Society for the Promotion of Science (JSPS). TFTs [17]. The photosensitivity of the reverse-biased p/i/n
Y. Miura and T. Hachida were with the Department of Electronics and
Informatics, Ryukoku University, Seta, Otsu 520-2194, Japan. They graduated
poly-Si phototransistor is 150 pA at 1000 lx for white light and
from Ryukoku University. proper values for all visible color lights [18]. The field effect
M. Kimura is with the Department of Electronics and Informatics, Ryukoku mobility and the threshold voltage of the n-type and p-type
University, Seta, Otsu 520-2194, Japan, Joint Research Center for Science and
poly-Si TFT were 93 cm2V-1s-1, 3.6 V, 47 cm2V-1s-1 and -2.9 V,
Technology, Ryukoku University, Seta, Otsu 520-2194, Japan, and Innovative
Materials and Processing Research Center, High-Tech Research Center, Seta, respectively. First, the photo transistor perceives the irradiated
Otsu 520-2194, Japan (phone: +81-77-543-5111; fax: +81-77-543-7794; light (Lphoto) and induce the photo-induced current (Iphoto).
e-mail: mutsu@rins.ryukoku.ac.jp).
IEEE SENSORS JOURNAL 2

Power Retina
transmitter v pixel
Wireless Human
power eyeball
supply

Power
receiver

Artificial
retina

Irradiated Stimulus
light signal

Transparent and flexible substrate


Fig. 1. Concept model of the artificial retina fabricated on a transparent and flexible substrate and implanted using epiretinal implant.

Next, the current mirror amplifies Iphoto to the mirror current insulator substrates, has little parasitic capacitance, and is
(Imirror). Finally, the load resistance converts Imirror to the subject to the influence of noise. Therefore, it is necessary to
output voltage (Vout). Consequently, the retina pixels confirm whether the artificial retina can be correctly operated
irradiated with bright light output a higher Vout, whereas the even using the unstable power source.
retina pixels irradiated with darker light output a lower Vout.
IV. DETECTED RESULT OF ILLUMINATION PROFILE
III. WIRELESS POWER SUPPLY USING INDUCTIVE COUPLING The artificial retina with the wireless power supply system is
The wireless power supply using inductive coupling is located in a light-shield chamber, and Vout in each retina pixel
shown in Fig. 3. The right graph in Fig. 3 is a measured stability is probed by a manual prober and voltage meter. White light
of the supply voltage. This system includes a power transmitter, from a metal halide lamp is diaphragmmed by a pinhole slit,
power receiver, diode bridge, and Zener diodes. The power focused through a convex lens, reflected by a triangular prism
transmitter consists of an AC voltage source and induction coil. and irradiated through the glass substrate to the back surfaces
The Vpp of the AC voltage source is 10V, and the frequency is of the artificial retina on a rubber spacer. The real image of the
34kHz, which is a resonance frequency of this system. The pinhole slit is reproduced on the back surface. The detected
material of the induction coil is an enameled copper wire, the result of Lphoto profile versus Vout profile is shown in Fig. 4.
diameter is 1.8 cm, and the winding number is 370 times. The It is found that the Lphoto profile can be correctly detected as
power receiver also consists of an induction coil, which is the the Vout profile even if it is driven using the unstable power
same as the power transmitter and located face to face. The source, although shape distortion is slightly observed, which is
diode bridge rectifies the AC voltage to the DC voltage, and the due to the misalignment of the optical system or characteristic
Zener diodes regulate the voltage value. The diode bridge and variation of TFTs.
Zener diodes are discrete devices and encapsulated in epoxy
resin. Although the current system should be downsized and V. CONCLUSION
bio-compatibility has to be inspected, the supply system is in We have evaluated an artificial retina using TFTs driven by
principle very simple to implant it into human eyeballs. As a wireless power supply. It was found that the Lphoto profile can
result, the generated power is not so stable as shown in Fig. 3, be correctly detected as the Vout profile even if it is driven
which may be because the artificial retina is fabricated on a using unstable power source generated by inductive coupling,

Iphoto Vdd Imirror


Current
mirror

Vout

Lphoto
resistance
Load

Vbias
transistor
Photo

Vadjust

Retina array Retina pixel

Fig. 2. Artificial retina using thin-film transistors.


IEEE SENSORS JOURNAL 3

Power 5.5
receiver Power
Power Zener receiver
transmitter diode Vdd

Vdd (V)
Diode Artificial 5
bridge retina 5.0140.012
Inductive Diode Zener
coupling bridge diode
GND
Artificial 4.5
retina 0 5 10
Vpp=10V
34kHz 1cm t (s)

Fig. 3. Wireless power supply using inductive coupling.

diode bridge, and Zener diodes. In order to apply the artificial 3244-3247, 2008.
[5] T. Tokuda, K. Hiyama, S. Sawamura, K. Sasagawa, Y. Terasawa, K.
retina to an actual artificial internal organ, we should further Nishida, Y. Kitaguchi, T. Fujikado, Y. Tano, and J. Ohta, "CMOS-based
develop a pulse signal generator appropriate as photorecepter multichip networked flexible retinal stimulator designed for image-based
cells, consider the interface between the stimulus electrodes retinal prosthesis," IEEE Trans. Electron Devices, vol. 56, pp. 2577-2585,
2009.
and neuron cells, investigate the dependence of Vout on Lphoto,
[6] A. Caspi, J. D. Dorn, K. H. McClure, M. S. Humayun, R. J. Greenberg,
which realizes grayscale sensing, etc. However, we think that and M. J. McMahon, "Feasibility study of a retinal prosthesis," Arch.
the above result means the feasibility to implant the artificial Ophthalmol., vol. 127, pp. 398-401, 2009
retina into human eyeballs. [7] Y. T. Wong, S. C. Chen, J. M. Seo, J. W. Morley, N. H. Lovell, and G. J.
Suaning, "Focal activation of the feline retina via a suprachoroidal
electrode array ," Vision Research, vol. 49, pp. 825-833, 2009.
ACKNOWLEDGMENT [8] K. Chen, Z. Yang, L. Hoang, J. Weiland, M. Humayun, and W. Liu, "An
integrated 256-channel epiretinal prosthesis," IEEE J. Solid-State Circuits,
The authors thank Drs. Hiroyuki Hara, Satoshi Inoue, vol. 45, pp. 1946-1956, 2010.
Hitoshi Fukushima, and Tomoyuki Kamakura of Seiko Epson, [9] M. Kimura, T. Shima, T. Okuyama, S. Utsunomiya, W. Miyazawa, S.
Drs. Shin Koide, Yutaka Kobashi, and Tomoyuki Ito of Epson Inoue, and T. Shimoda, "Artificial retina using thin-film photodiodes and
thin-film transistors, " Jpn. J. Appl. Phys., vol. 45, pp. 4419-4422, 2006.
Imaging Devices, Dr. Tsuneo Munakata of Jedat, and some [10] M. Kimura, T. Shima, T. Yamashita, Y. Nishizaki, H. Hara, and S. Inoue,
members in Mutsu laboratory of Ryukoku University. "Evaluation of thin-film photodevices and application to artificial retina,"
J. SID, vol. 16, pp. 661-667, 2008.
REFERENCES [11] S. Inoue, M. Matsuo, T. Hashizume, H. Ishiguro, T. Nakazawa, and H.
Ohshima, "Low temperature CMOS self-aligned poly-Si TFTs and circuit
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Zrenner, K. U. Bartz-Schmidt, and F. Gekeler, "Extraocular surgery for annealing in wet atmosphere," IEEE Electron Device Lett., vol. 16, pp.
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Tomita, H. Kurino, T. Tanaka, M. Tamai, and M. Koyanagi, "Power 22nd International Display Research Conference (Euro Display ‘02)
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stacked retinal prosthesis chip," Jpn. J. Appl. Phys., vol. 47, pp. [15] T. Yamashita, T. Shima, Y. Nishizaki, M. Kimura, H. Hara, and S. Inoue,

Optical
Artificial microscope
retina Shield
chamber
Metal
halide Pinhole Convex Rubber Manual prober
lamp slit lens spacer Voltage
Illuminance meter 4V
controller White Light
xyz xy table 3V
stage 2V
Triangular 0V 1V
prism
Vibration isolator Vibration isolator
Irradiated light Output voltage
Fig. 4. Detected result of the illumination profile versus the output voltage profile.
IEEE SENSORS JOURNAL 4

"Evaluation of thin-film photodiodes and development of thin-film He is a member of Society for Information Display (SID), Japan Society of
phototransistor," Jpn. J. Appl. Phys., vol. 47, pp. 1924-1929, 2008. Applied Physics (JSAP), and Institute of Electronics, Information and
[16] M. Kimura, Y. Miura, T. Ogura, S. Ohno, T. Hachida, Y. Nishizaki, T. Communication Engineers (EIC). He is also a chair or member of the technical
Yamashita, and T. Shima, "Device characterization of p/i/n thin-film committee of IEEE Electron Devices Society Kansai Chapter, the steering and
phototransistor for photosensor applications," IEEE Electron Device Lett., program committee of AM-FPD, AMD workshop of IDW, and organizing
vol. 31, pp. 984-986, 2010. committee of Thin Film Materials and Devices Meeting. He received
[17] M. Kimura, T. Shima, and T. Yamashita, "Artificial retina using thin-film Outstanding Poster Paper Award of Asia Display / IDW ’01, Best Paper Award
photodiode and thin-film transistor," ECS Trans., vol. 3, pp. 325-331, of AM-LCD ’05, Best Paper Award of 4th Thin Film Materials and Devices
2006. Meeting, Outstanding Poster Paper Award of IDW ’07, Outstanding Poster
[18] Y. Miura, T. Ogura, T. Hachida, Y. Nishizaki, T. Yamashita, T. Shima, Paper Award of IDW ’09, and 2010th Materials and Structures Laboratory
and M. Kimura, "Color sensitivity of thin-film phototransistor using Director's Award.
polycrystalline-silicon film with p/i/n structure, " Jpn. J. Appl. Phys., vol.
49, 03CA01, 2010.

Yuta Miura received his B. E. degree in Electronics and Informatics from


Ryukoku University in 2010. He had been working on research and
development of artificial retinas using TFTs. He is currently a graduate student
at Nara Institute of Science and Technology.

Tomohisa Hachida received his B. E. degree in Electronics and Informatics


from Ryukoku University in 2009. He had been working on research and
development of artificial retinas using TFTs. He is currently a graduate student
at Nara Institute of Science and Technology.

Mutsumi Kimura (M’10) received his B. E. and M. E. degrees in Physical


Engineering from Kyoto University in 1989 and 1991, respectively. He joined
Matsushita Electric Industrial Co., Ltd. in 1991 and Seiko Epson Corp. in 1995.
He received his Ph. D. degree in Electrical and Electric Engineering from
Tokyo University of Agriculture and Technology in 2001. He joined Ryukoku
University in 2003. He has been working on TFT characteristic analysis, TFT
simulator development, TFT-OLED development, and their advanced
applications.

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