Microwave Solidsate Devices and Microstrip Line

MICROWAVE ENGINEERING
COURSE CODE: ECE304
Dr.G.Venkat Babu
ECE/SEEE
UNIT III
MICROWAVE SOLID STATE
DEVICES AND STRIP LINES
•Transferred Electron Devices (TED)
•Gunn diode- working
•Modes
•IMPATT
•TRAPATT
•Microstrip lines- Characteristic impedance, losses, quality factor
•Parallel strip lines- Characteristic impedance
•Attenuation losses
•Coplanar strip line
•Shielded strip lines
Problems
Microwave Devices and Circuits Third
* Edition SAMUEL Y.LIAO 2
Transferred Electron Devices (TED)
⚫ TED’s are semiconductor devices with no
junctions and gates.
⚫ They are fabricated from compound

semiconductors like GaAs, InP, CdTe etc.
⚫ TED’s operate with hot electrons whose

energy is much greater than the thermal
energy.
Gunn Characteristics
⚫ Power: 1W (Between 4GHz and 16GHz)
⚫ Gain Bandwidth product : >10dB
⚫ Average gain : 1 – 12 dB
⚫ Noise figure : 15 dB

Gunn Diode
⚫ Invented by J.B Gunn

Gunn Effect:
⚫ Above some critical voltage (Corresponding
to Electric field of 2k-4k V/cm) the current
passing through n-type GaAs becomes a
periodic fluctuating function of time.
⚫ Frequency of oscillation is determined mainly
by the specimen, not by the external circuit.
⚫ Period of oscillation is inversely proportional
to the specimen length and is equal to the
transit time of electrons between the
electrodes
⚫ The current waveform was produced by
applying a voltage pulse of 16V and 10ns
duration to an n-type GaAs of 2.5 x 10-3 cm
length. The oscillation frequency was 4.5Ghz

RWH Theory
⚫ Explanation for Gunn Effect:
Ridley – Watkins – Hilsum (RWH)
Theory
⚫ Two concepts related with RWH Theory.

◦ Differential negative resistance
◦ Two valley model

Differential negative resistance
⚫ Fundamental concept of RWH Theory.
⚫ Developed in bulk solid state III-V
compound when a voltage is applied

⚫ Differential negative resistance make the
sample electrically unstable.

Two valley model theory

InP Diode

⚫ Data for two valleys in GaAs

Electron transfer mechanism

⚫ Conductivity of n-type GaAs:
⚫ e = Electron charge
⚫ μ = Electron mobility
⚫ = Electron density in the lower valley
⚫ = Electron density in the upper valley
⚫ is the electron density

Peak to valley current ratio

⚫ According to RWH theory, in order to exhibit
negative resistance the energy band structure of
semiconductor should satisfy
◦ The energy difference between two valleys must be

several times larger than the thermal energy (KT ~
0.0259eV)
◦ The energy difference between the valleys must be
smaller than the bandgap energy (Eg)
◦ Electron in lower valley must have a higher mobility
and smaller effective mass than that of in upper valley
⚫ Possessed by GaAs, InP, CdTe etc

Vd=fL

* 30
* 31
Modes of Operation
Gunn Oscillation Mode:
◦ (f x L) = 107 cm/s and (n x L) > 1012 /cm2
◦ Cyclic formation of High field domain
Stable Amplification Mode
◦ (f x L) = 107 cm/s and 1011/cm2 < (n x L)
>1012/cm2
LSA Oscillation Mode
◦ (f x L) >107 cm/s and 2 x 104 < (n/f) > 2
X105/cm2
Bias-circuit
◦ (f x L) is small. L is very small. When E=Eth
current falls as Gunn oscillation begins, leads to
oscillation in bias circuit (1KHz to 100MHz)
* 32
⚫ There are three domain modes for Gunn
oscillation modes.
1. Transit time domain mode, (Gunn mode)
* 33
2. Delayed domain mode
◦ Here domain is collected while

◦ New domain cannot form until E rises above
threshold again.
◦ Also called inhibited mode.
◦ Efficiency: 20%
* 34
3. Quenched domain mode:
◦ If bias field drops below Es, domain collapses

before it reaches anode.
◦ When the bias field swings above Eth, a new
domain starts and process repeats.
◦ Frequency of oscillation is determined by resonant
circuit.
◦ Efficiency : 13%
* 35
⚫ Limited Space charge Accumulation Mode
(LSA)
Most Important mode for Gunn oscillator.

Domain is not allowed to form.
Efficiency : 20%
* 36
Applications of Gunn Diode
⚫ In radar transmitters
⚫ Air traffic control (ATC) and Industrial
Telemetry
⚫ Broadband linear amplifier
⚫ Fast combinational and sequential logic
circuit
⚫ Low and medium power oscillators in
microwave receivers
⚫ As pump sources
Avalanche transit time devices
* 41
Principle of operation
⦿ Negative resistance is achieved by creating a
delay (1800 Phase shift) between the voltage and
current.
⦿ Delay is achieved by,
◼ Delay in generating the avalanche current
multiplication
◼ Delay due to transit time through the material
⦿ So called Avalanche transit time (ATT)
devices
⦿ Avalanche is generated by Carrier impact
ionization
⦿ TT is due to the drift in the high field domain
* 42
Features
⚫ Presence of P-N junctions
⚫ Diode is reverse biased
⚫ High field (potential gradient) is applied of
the order 400 KV/cm
Two modes of ATT
◦ IMPATT- Impact ionization ATT (Efficiency
5-10%)
◦ TRAPATT- Trapped plasma ATT (Efficiency
20-60%)
* 43
IMPATT
(IMPact Ionization Avalanche Transit Time)

“Avalanche transit time diode oscillators rely
on the effect of voltage breakdown across a
reverse p-n junction to produce a supply of
holes and electrons”
dc-RF conversion is 5 % to 10 % is less

compared with TRAPATT
Frequency as high as 100 GHz with silicon

diodes
Basic operating principle of IMPATT is a dc

electric filed distribution that exists when a
large reverse bias is applied across the diode
with doping profile n+-p-i-p+ * Microwave Devices and Circuits Third
Edition SAMUEL Y.LIAO 45
Read diode(IMPATT)
* 46
* 50
APPLICATIONS
Intruder alarms
Basic forms of radar
General detectors using RF technology
* 51
Power Efficiency

Microwave Solidsate Devices and Microstrip Line

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MICROWAVE ENGINEERING

COURSE CODE: ECE304

⚫ They are fabricated from compound

⚫ TED’s operate with hot electrons whose

Microwave Devices and Circuits Third

⚫ Invented by J.B Gunn

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

⚫ Two concepts related with RWH Theory.

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

Microwave Devices and Circuits Third

◦ The energy difference between two valleys must be

⚫ Possessed by GaAs, InP, CdTe etc

Microwave Devices and Circuits Third

◦ Here domain is collected while

◦ If bias field drops below Es, domain collapses

Most Important mode for Gunn oscillator.

(IMPact Ionization Avalanche Transit Time)

Microwave Devices and Circuits Third

dc-RF conversion is 5 % to 10 % is less

Frequency as high as 100 GHz with silicon

Basic operating principle of IMPATT is a dc

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