® nd

IKW15N120T2
TrenchStop 2 generation Series

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology

with soft, fast recovery anti-parallel Emitter Controlled Diode
C
 Short circuit withstand time – 10s
 Designed for :
- Frequency Converters G
E
- Uninterrupted Power Supply

® nd
TrenchStop 2 generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
 Easy paralleling capability due to positive temperature coefficient PG-TO-247-3
in VCE(sat)
 Low EMI
 Low Gate Charge
 Very soft, fast recovery anti-parallel Emitter Controlled HE Diode

1
Qualified according to JEDEC for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package

IKW15N120T2 1200V 15A 1.75V 175C K15T1202 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DC collector current (Tj = 150°C) IC A
TC = 25C 30
TC = 110C 15
Pulsed collector current, tp limited by Tjmax ICpul s 60
Turn off safe operating area - 60
VCE  1200V, Tj  175C
Diode forward current (Tj = 150°C) IF
TC = 25C 25
TC = 110C 15
Diode pulsed current, tp limited by Tjmax IFpul s 60
Gate-emitter voltage VGE 20 V
2)
Short circuit withstand time tSC 10 s
VGE = 15V, VCC  600V, Tj, start  175C
Power dissipation Ptot 235 W
TC = 25C
Operating junction temperature Tj -40...+175 C
Storage temperature Tstg -55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
Wavesoldering only, temperature on leads only

1
J-STD-020 and JESD-022
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS 1 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.63 K/W
junction – case
Diode thermal resistance, RthJCD 1.12
junction – case
Thermal resistance, RthJA 40
junction – ambient

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µ A 1200 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 15 A
T j =2 5 C - 1.7 2.2
T j =1 5 0 C - 2.1 -
T j =1 7 5 C - 2.2 -
Diode forward voltage VF V G E = 0V , I F = 1 5 A
T j =2 5 C - 1.75 2.2
T j =1 5 0 C - 1.8 -
T j =1 7 5 C - 1.75 -
Gate-emitter threshold voltage VGE(th) I C = 0. 6m A, V C E = V G E 5.2 5.8 6.4
Zero gate voltage collector current ICES V C E = 12 0 0V , mA
V G E = 0V
T j =2 5 C - - 0.4
T j =1 5 0 C - - 4.0
T j =1 7 5 C - - 20
Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 600 nA
Transconductance gfs V C E = 20 V , I C = 15 A - 8 - S

IFAG IPC TD VLS 2 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

Dynamic Characteristic
Input capacitance Ciss V C E = 25 V , - 1000 - pF
Output capacitance Coss V G E = 0V , - 100 -
Reverse transfer capacitance Crss f= 1 MH z - 56 -
Gate charge QGate V C C = 96 0 V, I C =1 5 A - 93 - nC
V G E = 15 V
Internal emitter inductance LE - 13 - nH
measured 5mm (0.197 in.) from case
1)
Short circuit collector current IC(SC) V G E = 15 V ,t S C  10 s - - A
V C C = 6 0 0 V,
T j , s t a r t = 2 5 C 82
Tj,start = 175C 60

Switching Characteristic, Inductive Load, at Tj=25 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =2 5 C , - 32 - ns
Rise time tr V C C = 60 0 V, I C = 1 5 A, - 25 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 41 . 8, - 362 -
2)
Fall time tf L  =1 2 6n H, - 95 -
2)
Turn-on energy Eon C  = 3 4p F - 1.25 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 0.8 -
Total switching energy Ets reverse recovery. - 2.05 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =2 5 C , - 300 - ns
Diode reverse recovery charge Qrr V R = 6 00 V , I F = 1 5 A, - 1.3 µC
Diode peak reverse recovery current Irrm d i F / d t =4 5 0 A/ s - 10 A
Diode peak rate of fall of reverse d i r r /d t - 215 - A/s
recovery current during t b

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2)
Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 3 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

Switching Characteristic, Inductive Load, at Tj=175 C

Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j =1 7 5 C - 31 - ns
Rise time tr V C C = 60 0 V, I C = 1 5 A, - 30 -
V G E = 0/ 15 V ,
Turn-off delay time td(off) R G = 4 1. 8 , - 450 -
1)
Fall time tf L  =3 1 5n H, - 176 -
1)
Turn-on energy Eon C  = 3 4p F - 1.5 - mJ
Energy losses include
Turn-off energy Eoff “tail” and diode - 1.3 -
Total switching energy Ets reverse recovery. - 2.8 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time trr T j =1 7 5 C - 460 - ns
Diode reverse recovery charge Qrr V R = 6 00 V , I F = 1 5 A, - 2.65 - µC
Diode peak reverse recovery current Irrm d i F / d t =4 6 0 A/ s - 13 - A
Diode peak rate of fall of reverse d i r r /d t - 123 A/s
recovery current during t b

1)
Leakage inductance L  a nd Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS 4 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

tp=3µs

60A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

10A 10µs

40A 50µs
TC=80°C

TC=110°C 150µs
1A
Ic
20A 500µs

Ic 20ms

DC
0A 0.1A
10Hz 100Hz 1kHz 10kHz 100kHz 1V 10V 100V 1000V
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C,
(Tj  175C, D = 0.5, VCE = 600V, Tj 175C;VGE=15V)
VGE = 0/+15V, RG = 41.8)

200W
30A
Ptot, POWER DISSIPATION

IC, COLLECTOR CURRENT

150W

20A

100W

10A
50W

0W 0A
25°C 50°C 75°C 100°C 125°C 150°C 25°C 75°C 125°C
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Maximum power dissipation as a Figure 4. Maximum DC Collector current as
function of case temperature a function of case temperature
(Tj  175C) (VGE  15V, Tj  175C)

IFAG IPC TD VLS 5 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

60A 60A

50A 20V 50A 20V

VGE=17V VGE=17V
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

40A 15V 40A 15V
13V 13V

30A 11V 30A 11V

9V 9V
7V 7V
20A 20A

10A 10A

0A 0A
0V 1V 2V 3V 4V 0V 1V 2V 3V 4V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25°C) (Tj = 175°C)

60A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

3.0V IC=30A
50A
IC, COLLECTOR CURRENT

2.5V
40A

2.0V
IC=15A
30A
1.5V

20A
IC=7.5A
1.0V

10A TJ=175°C IC=2A

0.5V
25°C

0A 0.0V
0V 2V 4V 6V 8V 10V 12V
0°C 50°C 100°C 150°C
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

IFAG IPC TD VLS 6 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

td(off) 1000 ns

td(off)
tf
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns
tf
100 ns

td(on)
td(on)

10ns tr
tr 10 ns

7.5A 15.0A 22.5A      

IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω, VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

td(off)
6.5V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

6.0V
t, SWITCHING TIMES

5.5V

100ns
5.0V max.
tf
4.5V
td(on)

4.0V typ.
tr
3.5V

min.
10ns
0°C 50°C 100°C 150°C 0°C 50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE=600V, (IC = 600µA)
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)

IFAG IPC TD VLS 7 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

*) Eon and Ets include losses

7.5mJ *) Eon and Etsinclude losses
due to diode recovery
due to diode recovery
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

5.00 mJ
Ets*
Ets*

5.0mJ 3.75 mJ

Eon* Eon*
2.50 mJ
2.5mJ Eoff

1.25 mJ Eoff

0.0mJ
7.5A 15.0A 22.5A 0.00 mJ
     
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ=175°C, (inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω, VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) Eon and Ets include losses
due to diode recovery due to diode recovery

5.00mJ Ets*
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

Ets*
2.4mJ
3.75mJ Eon*

Eon*

2.50mJ
1.2mJ
Eoff
Eoff
1.25mJ

0.0mJ 0.00mJ
0°C 50°C 100°C 150°C 400V 500V 600V 700V

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE=600V, (inductive load, TJ=175°C,
VGE=0/15V, IC=15A, RG=41.8Ω, VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

IFAG IPC TD VLS 8 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

15V
1nF Ciss
VGE, GATE-EMITTER VOLTAGE

240V

c, CAPACITANCE
960V
10V

100pF Coss

5V
Crss

0V 10pF
0nC 25nC 50nC 75nC 0V 10V 20V

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=15 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT

15µs
tSC, SHORT CIRCUIT WITHSTAND TIME

100A

75A
10µs

50A

5µs

25A

0µs 0A
12V 14V 16V 18V 12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a Figure 20. Typical short circuit collector
function of gate-emitter voltage current as a function of gate-
(VCE=600V, start at TJ175°C) emitter voltage
(VCE  600V, Tj,start =175C)

IFAG IPC TD VLS 9 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series
VCE, COLLECTOR-EMITTER VOLTAGE

25A
VCE
600V 15A 600V

IC, COLLECTOR CURRENT

20A

IC
15A 400V 10A 400V

10A

200V 5A 200V

5A

IC VCE
0A 0V 0A 0V
0us 0.4us 0.8us 1.2us 0us 0.4us 0.8us 1.2us
t, TIME t, TIME
Figure 21. Typical turn on behavior Figure 22. Typical turn off behavior
(VGE=0/15V, RG=41.8Ω, Tj = 175C, (VGE=15/0V, RG=41.8Ω, Tj = 175C,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

0
10 K/W
ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

0
10 K/W
D=0.5 D=0.5
R,(K/W) , (s)
0.2 0.291 2.75*10-4
0.2 0.434 2.60*10-3
-1
10 K/W R,(K/W) , (s)
0.1 0.363 1.48*10-2
0.143 3.06*10-4
0.1 0.028 1.78*10-1
0.217 3.47*10-3
0.05 0.258 1.71*10-2 -1
10 K/W
0.017 2.63*10-1 0.05 R1 R2
0.02
0.01 R1 R2 0.02
-2 single pulse C 1 =  1 /R 1 C 2 =  2 /R 2
10 K/W 0.01

C 1 =  1 /R 1 C 2 =  2 /R 2 single pulse

-2
10 K/W
10µs 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance Figure 24. Diode transient thermal
(D = tp / T) impedance as a function of pulse
width
(D=tP/T)

IFAG IPC TD VLS 10 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

600ns

Qrr, REVERSE RECOVERY CHARGE

TJ=175°C
trr, REVERSE RECOVERY TIME

3µC
500ns

400ns
2µC
300ns
TJ=175°C
200ns TJ=25°C
1µC
TJ=25°C
100ns

0ns 0µC
400A/µs 800A/µs 1200A/µs 400A/µs 800A/µs 1200A/µs
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as Figure 24. Typical reverse recovery charge
a function of diode current slope as a function of diode current
(VR=600V, IF=15A, slope
Dynamic test circuit in Figure E) (VR=600V, IF=15A,
Dynamic test circuit in Figure E)

-600A/µs TJ=25°C
TJ=175°C
Irr, REVERSE RECOVERY CURRENT

OF REVERSE RECOVERY CURRENT

dirr/dt, DIODE PEAK RATE OF FALL

20A
-500A/µs

15A -400A/µs
TJ=25°C TJ=175°C
-300A/µs
10A

-200A/µs

5A
-100A/µs

0A -0A/µs
400A/µs 800A/µs 1200A/µs 400A/µs 800A/µs 1200A/µs

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current Figure 26. Typical diode peak rate of fall of
as a function of diode current reverse recovery current as a
slope function of diode current slope
(VR=600V, IF=15A, (VR=600V, IF=15A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

IFAG IPC TD VLS 11 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

60A

TJ=25°C
50A 2.0V IF=30A
175°C

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

15A
40A
1.5V
7.5A
30A
2A
1.0V
20A

0.5V
10A

0A 0.0V
0V 1V 2V 0°C 50°C 100°C 150°C
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as Figure 28. Typical diode forward voltage as a
a function of forward voltage function of junction temperature

IFAG IPC TD VLS 12 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

IFAG IPC TD VLS 13 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

IFAG IPC TD VLS 14 Rev. 2.2 12.06.2013

 ® nd
IKW15N120T2
TrenchStop 2 generation Series

Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.

Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.

Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.

IFAG IPC TD VLS 15 Rev. 2.2 12.06.2013