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  • 2SA968Y Transistors: Si PNP Power BJT

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    constantin visinescu
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    This document provides specifications for a Si PNP power BJT transistor. It lists the transistor's maximum breakdown voltages, current and power ratings, gain ranges, frequency response, and timing parameters. Key specs include a V(BR)CEO of 160V, I(C) Max of 1.5A, power dissipation of 25W, and minimum current gain of 120 at 100mA collector current and 5V collector-emitter voltage.

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    This document provides specifications for a Si PNP power BJT transistor. It lists the transistor's maximum breakdown voltages, current and power ratings, gain ranges, frequency response, and timing parameters. Key specs include a V(BR)CEO of 160V, I(C) Max of 1.5A, power dissipation of 25W, and minimum current gain of 120 at 100mA collector current and 5V collector-emitter voltage.

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    9 views1 page

    2SA968Y Transistors: Si PNP Power BJT

    Uploaded by

    constantin visinescu
    This document provides specifications for a Si PNP power BJT transistor. It lists the transistor's maximum breakdown voltages, current and power ratings, gain ranges, frequency response, and timing parameters. Key specs include a V(BR)CEO of 160V, I(C) Max of 1.5A, power dissipation of 25W, and minimum current gain of 120 at 100mA collector current and 5V collector-emitter voltage.

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    © All Rights Reserved
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    2SA968Y Transistors

    Si PNP Power BJT

    Military/High-RelN

    V(BR)CEO (V)160

    V(BR)CBO (V)160

    I(C) Max. (A)1.5

    Absolute Max. Power Diss. (W)25

    Maximum Operating Temp (øC)

    I(CBO) Max. (A)

    @V(CBO) (V) (Test Condition)

    V(CE)sat Max. (V)

    @I(C) (A) (Test Condition)

    @I(B) (A) (Test Condition)

    h(FE) Min. Current gain.120

    h(FE) Max. Current gain.240

    @I(C) (A) (Test Condition)100m

    @V(CE) (V) (Test Condition)5.0

    f(T) Min. (Hz) Transition Freq100M

    @I(C) (A) (Test Condition)

    @V(CE) (V) (Test Condition)

    t(d) Max. (s) Delay time.

    t(r) Max. (s) Rise time

    t(on) Max. (s) On time.

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