ANALOG & DIGITAL ELECTRONICS

UNIT-II
(Bipolar Junction Transistor)

by
Kumar Saliganti
Assistant Professor (C)
skjntum@gmail.com

Department of Electrical and Electronics Engineering

JNTUH University College of Engineering Manthani
Contents:
I. D io d e s a n d A p p lic a t io n s
II. B ip o la r J u n c t io n T r a n s is t o r
II I. F E Ts a n d D igit a l C ir c u it s
IV . C o m b in a t io n a l L o gic C ir c u it s
V. S e q u e n t ia l L o gic C ir c u it s

Text Books:
1 . In t e gr a t e d E le c t r o n ic s : A n a lo g a n d D igit a l C ir c u it s a n d S ys t e m s ,
2 / e , J a c c o b M illm a n , C h r is t o s H a lkia s a n d C h e t h a n D . P a r ikh ,
Ta t a M c G r a w - H ill E d u c a t io n , In d ia , 2 0 1 0 .

2 . D igit a l D e s ign , 5 / e , M o r r is M a n o a n d M ic h a e l D . C ile t t e ,

P e a r s o n , 2 0 11 .
II. Bipolar Junct ion Transist or
C ontents
➢ Tr a n s is tor ch a r a ct eris t ics : T h e ju n ct ion t r a n s is tor,
t r a n s ist or a s a n a m p lifier.
➢ C B , C E , C C con figu r a t ion s , com p a r is on of t r a n s is tor
con figu r a t ion s .
➢ O p er a t in g p oin t .
➢ S elf-b ia s or E m it t er b ia s , b ia s com p en s a t ion .
➢ T h er m a l r u n a w a y a n d s t a b ilit y.
➢ C E a m p lifier r es p on s e, ga in b a n d w idt h p r od u ct .
➢ E m it t er follow er, R C cou p led a m p lifier.
➢ Tw o ca s ca d ed C E a n d m u lt is t a ge C E a m p lifier s .
Understanding of BJT
 force – voltage/current
water flow – current
- amplification

Understanding of BJT
 Transistor Structure
▪ The BJT (bipolar junction
transistor) is constructed with
three doped semiconductor
regions separated by two pn
junctions.

▪ The three regions are called

emitter (E), base (B) and
collector (C).
 Transistor Structure (Cont. )

➢ The BJT have 2 types

1. The two n regions separated by a p

region - called ‘npn’
2. The two p regions separated by an n
region - called ‘pnp’.
 Transistor Structure (Cont. )

▪ The pn junction is joining the base

region and the emitter region is
called the base-emitter junction or
input junction.

▪ The pn junction is joining the base

region and the collector region is
called the base-collector junction
or output junction.
 Transistor Structure (Cont. )

▪ The base region is lightly doped and

very thin compared to the heavily
doped emitter and the moderately
doped collector region.
 Transistor Currents
-The arrow is always
drawn
on the emitter

-The arrow always point

toward the n-type

IC= the collector current -The arrow indicates the

IB= the base current direction of the emitter
IE= the emitter current current:
pnp:E→ B
npn: B→ E
 Basic models of BJT
npn transistor
 Transistors can be
constructed as two Diode
diodes that are
connected together.

Diode

pnp transistor

Diode

Diode

11
Basic models of BJT
 Modes of Operation

➢ Based on the bias voltages applied at the two p-n junctions,

transistors can operate in three modes:

1. Cut-off (both EB and CB junctions are reversed biased)

2. Saturation (both EB and CB junctions are forward biased)
3. Active mode (EBJ is forward biased and CBJ is reversed biased)

➢ Cut-off and Saturation modes are used in switching operation.

➢ Active mode is used in amplification purposes.
 Active Mode Operation
EBJ: CBJ:
Forward Biased Reverse Biased

◦ Forward bias of EBJ injects electrons from emitter into base (Emitter current).
◦ Most electrons shoot through the base into the collector (Collector current).
◦ Some emitted electrons recombine with holes in p-type base (Base Current)
 Active Mode Operation

• Both biasing potentials have been applied to a pnp transistor and resulting majority and
minority carrier flows indicated.
• Majority carriers (+) will diffuse across the forward-biased p-n junction into the n-type
material.
• A very small number of carriers (+) will through n-type material to the base terminal.
Resulting IB is typically in order of microamperes.
• The large number of majority carriers will diffuse across the reverse-biased junction into the
p-type material connected to the collector terminal.
 Active Mode Operation (Cont.)
• Majority carriers can cross the reverse-biased junction
because the injected majority carriers will appear as
minority carriers in the n-type material.
• Applying KCL to the transistor :
IE = IC + IB
• The comprises of two components – the majority and
minority carriers
IC = ICmajority + ICOminority
• ICO – IC current with emitter terminal open and is
called leakage current.
Operation of NPN transistor
Operation of PNP transistor
 Types of Transistor Configurations
• When transistor is to be connected in a circuit, one terminal is used as
an input terminal, the other terminal is used as an output terminal and
third terminal is common to the input and output.

• Depending upon the input, output and common terminals, a transistor

can be connected in three configurations.

• They are
1. Common base configuration (CB)
2. Common emitter configuration (CE)
3. Common collector configuration (CC)
Common Base Configuration (CB)
Common Base Configuration (CB)
 Common Base Configuration (CB)
• The common-base configuration with pnp and npn transistors
are shown in the figures in the previous slide..
• The term common-base is derived from the fact that the base
is common to both the input and output sides of the
configuration.
• The arrow in the symbol defines the direction ofemitter
current through the device.
• The applied biasing are such as to establish currentin the
direction indicated for each branch.
• That is, direction of IE is the same as the polarity of VEE and
IC to VCC .
• Also, the equation IE = IC + IB still holds.
Collector Current:
The base current is because of the recombination of the electrons and holes in the base region. The whole
emitter current will not flow through the current. The collector current increase slightly because of the
leakage current flows due to the minority charge carrier. The total collector current consists;

1.The large percentage of emitter current that reaches the collector terminal, i.e., αIE.
2.The leakage current Ileakage . The minority charge carrier is because of the flow of minority charge carrier
across the collector-base junction as the junction is heavily reversed. Its value is much smaller than αIE.

Total collector current,

if IE = 0 (when the emitter circuit is open) then still a small current flow in the collector circuit
called leakage current. This leakage current is represented by as ICBO, i.e., collector-base current
with emitter circuit is open.

The leakage current is also abbreviated as ICO i.e.,

Current gain (α)
the collector current with emitter circuit open.
 Input characteristics
• The driving point or input
parameters are shown in the
figure.
• An input current (IE) is a function of
an input voltage (VBE) for various
of output voltage (VCB ).
• This closely resembles the
characteristics of a diode.
• In the dc mode, the levels of
IC and IE at the operationpoint
are related by:
αdc = IC /IE
•Normally, α 1.
•For practical devices, α is
typically from 0.9 to 0.998.
Output characteristics
 Output characteristics
• The output set relates an output current (IC ) to an output voltage (VCB) for
various of level of input current(IE ).

There are three regions of interest:

Active region
• In the active region, the b-e junction is forward-biased, whereas the c-b junction
is reverse-biased.
• The active region is the region normally employed for linear amplifier. Also, in
this region, I C  IE

Cutoff region:
• The cutoff region is defined as that region where the collector current is 0A.
• In the cutoff region, the B-E and C-B junctions of a transistor are both reverse-
biased.

Saturation region:
• It is defined as that region of the characteristics to the left of VCB= 0 V.
• In saturation region, the B-E and C-B junctions of a transistor are both forward
biased.
 Base Width Modulation: “Early” Effect
• When bias voltages change, depletion widths change and the
effective base width will be a function of the bias voltages
• Most of the effect comes from the C-B junction since the bias on
the collector is usually larger than that on the E- B junction

Base width gets smaller as applied voltages get larger

Early Effect

Range is -100V to -200V

Converge ~ at single point called "Early Voltage".

Large "Early Voltage" = Absence of "Base WidthModulation"

Common-Emitter Configuration (CE)
– Most common configuration
of transistor is as shown
– emitter terminal is common
to input and output circuits
this is a common-emitter
configuration Figure: Common-emitter
configuration ofnpn
– we will look at the transistor
characteristics of the device
in this configuration
– The current relations are still
applicable, i.e.,
– IE = IC + IB and IC =α IE

Figure: Common-emitter configuration ofpnp

transistor
Common-Emitter Configuration (CE)
Collector Current:
In CE configuration, the input current IB and the output current
IC are related by the equation shown below.
If the base current is open (i.e., IB = 0). The collector current
is current to the emitter, and this current is abbreviated as
ICEO that means collector- emitter current with the base
open.

Substitute the value IB in equations (1), we get,

 Input characteristics
– the input takes the form of a
forward- biased pn junction
– the input characteristics are
therefore similar to those of a
semiconductor diode

An input current (IB) is a

function of an input voltage
(VBE) for various of output
voltage (VCE ).
Output characteristics
 Output characteristics
–The magnitude of IB is in μA and not as horizontal as IE in common-base
circuit.
– The output set relates an output current (IC) to an output voltage (VCE) for
various of level of input current (IB ).
• There are three portions as shown:
Active region
▪ The active region, located at upper-right quadrant, has
the greatest linearity.
▪ The curve for IB are nearly straight and equally spaced.
▪ In active region, the B-E junction is forward-biased,
whereas the C-B junction isreverse-biased.
▪ The active region can be employed for voltage, current or power amplification.
Cutoff region:
•The region below IB = 0μA is defined as cutoff
region.
•For linear amplification, cutoff region should be
avoided.
Saturation region:
• The small portion near the ordinate, is the saturation
region, which should be avoided for linear application.
• In the dc mode, the levels of IC and IB at the operation point
are related by: Normally,  ranges from 50 to 400.

 dc = IC /IB
For ac situations,  is definedas
I C
 =
I B
ac

V CE = con s tan t
 Common - Collector Configuration (CC)
• The common-collector configuration with npn
and pnp transistors are shown in the figures.

Figure: Common-collector Figure: Common- collector

configuration of npn transistor configuration of pnp transistor
Common - Collector Configuration (CC)
 Common - Collector
• It is used primarily for impedance-matching
purpose since it has a high input impedance and
low output impedance.
• The load resistor can be connected from emitter to
ground.
• The collector is tied to ground and the circuit
resembles common-emitter circuit.
• The output set relates an output current (IE) to an
output voltage (VCE) for various of level of input
current (IB ).
Emitter Current:
We know that,
 Input characteristics
• It is a curve whichshows the relationship between

• the base current,IB and the collector base voltage VCB at constant VCE This
method of determining the characteristic is as follows.
• First, a suitable voltage is applied between the emitter and
• collector.
• Next the input voltage VCB is increased in a number
of steps and corresponding values of IE are noted.
•The base current is taken on the y-axis, and the input voltage
is taken on the x-axis. Fig. shows the family of the input
characteristic at different collector- emitter voltages.
Input characteristics
 Output characteristics

• This is almost the same as the

output characteristics of common-
emitter circuit, which are the
relations between IC and VCE for
various of level of input current IB.
Since that: IE  IC .
Comparison between CB, CE & CC Configurations
THANK YOU