, One.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

HF/VHF power MOS transistor BLF242

FEATURES PIN CONFIGURATION

• High power gain
» Low noise
• Easy power control
• Good thermal stability
« Withstands full load mismatch
• Gold metallization ensures
excellent reliability.

DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor Fig.1 Simplified outline and symbol.
designed for professional transmitter
applications in the HF/VHF frequency
range.
CAUTION
The transistor is encapsulated in a
4-lead, SOT123 flange envelope, with The device is supplied in an antistatic package. The gate-source input must
a ceramic cap. All leads are isolated be protected against static charge during transport and handling.
from the flange.
WARNING
PINNING-SOT123 Product and environmental safety - toxic materials
PIN DESCRIPTION This product contains beryllium oxide. The product is entirely safe provided
1 drain that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
2 source precautions. After use, dispose of as chemical or special waste according to
3 gate the regulations applying at the location of the user. It must never be thrown
4 source out with the general or domestic waste.

QUICK REFERENCE DATA

RF performance at Th = 25 "C in a common source test circuit.

T VDS PL GP 'ID
MODE OF OPERATION
(MHz) (V) (W) (dB) (%)
CW, class-B 175 28 5 > 13 > 50
typ. 16 typ. 60

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 HF/VHF power MOS transistor BLF242

LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage - 65 V
±VGS gate-source voltage - 20 V
ID DC drain current - 1 A
Plot total power dissipation up to Tmb = 25 °C - 16 W
Tstg storage temperature -65 150 "C
Tj junction temperature - 200 JC

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

Rthj-mb thermal resistance from Tmb = 25"C;P t o t =16W 11 K/W
junction to mounting base
Rth mb-h thermal resistance from Tmb = 2 5 = C ; P t o t = 1 6 W 0.3 K/W
mounting base to heatsink

10 —

(1) Current is this area may be limited by RDS(OH) (1) Continuous operation
(2) Tmb = 25°C (2) Short-time operation during mismatch.

Fig.2 DC SOAR. Fig.3 Power/temperature derating curves.

 HF/VHF power MOS transistor BLF242

CHARACTERISTICS
Ti = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage VGs = 0; |D = 0-1 mA 65 - - V
IDSS drain-source leakage current VGs = 0; VDS = 28 V - - 10 HA
IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 - - 1 HA

Vcs(th) gate-source threshold voltage ID = 3mA; VDS = 10V 2 - 4.5 V

9fs forward transconductance ID = 0.3 A; VDS = 10V 0.16 0.24 _ S

Ros(on) drain-source on-state resistance ID = 0.3 A; VGS =1 V - 3.3 5 n

IDSX on-state drain current VGS = 10V; VGS = 10V - 1.2 - A
Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 13 - PF
Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 9.4 - PF
Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 1.7 - pF

1.5 r
T.C.
(mV/K)

,D(mA) V GS( V)

VDS = 10V.
V DS = 1

Fig.4 Temperature coefficient of gate-source Fig.5 Drain current as a function of gate-source

voltage as a function of drain current, typical voltage, typical values.
values.
 HF/VHF power MOS transistor BLF242

PACKAGE OUTLINE

Flanged ceramic package; 2 mounting holes; 4 leads SOT123A

T
I i F

, j—, f

I ..L FFI

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
]
UNIT A b c D D ) Q q "1
U2 U3 W1 w2

mm
747 582 0,18 973 g.e 2.72 20.71 5,61 33 4,63
18.42
2515 661 ! 978 051 1 02
6,37 5.56 010 947 9.t 231 1993 5 16 34 411 24.38 6.09 : 939
45°
0,294 0.229 0007 0383 0.3 0.107 0815 0 2 2 1 31 0182 099 0 26 i 0.385
inches 0725 002 004
0251 0219 0,004 0.373 0,3 0.091 0785 0203 20 0162 096 0 24 ' 0.370
_.._!... ._ ...

OUTLINE REFER ENCES EUROPEAN

VERSION IEC JEDEC EIAJ PROJECTION

SOT123A e3® 97-06-28