Report #: S220912-228

PN33QF2DQ submitted five NTND31015NZTAG NFET XLLGA6 20V 200MA 1.5O's for analysis. The customer's
problem statement read: "Please perform full FA for SHORT(5UNIT) & GOOD(1UNIT).".

onsemi inspected the units thoroughly under an optical microscope and package markings were captured. No
problems were found during package inspection. X-ray analysis was conducted and no problems were found.
Scanning Acoustic Tomography (SAT) was conducted. No package delamination was detected. Curve Trace testing
per the device test specification document was conducted. The units SN1 were confirmed to fail short IDSS and Vth
parameter for Die2 while the remaining unit failed short IDSS and Vth parameter for Die 1 during curve trace testing.

SN5 was subjected to backside polishing in preparation for backside Photoemission Microscopy (PEM) analysis. PEM
site was detected at the active area of die. IR inspection showed sign of wafer fab defect at the PEM site area.

Another unit SN4 were removed the mold compound, optical and scanning electron microscope (SEM) inspection
showed wafer fab defect observed on the active area.

In conclusion, the cause of IDSS/VTH short failure was due to wafer fab defect.

Mohamad Izuan Abd Aziz

onsemi (M) Sdn. Bhd.Lot 122, Senawang Industrial Estate70450 Seremban, Negeri Sembilan, MalaysiaTel: +606-682 1870
 Product Analysis Laboratory
Report #: S220912-228

PIN1 PIN1

Figure 1: (SN5) Optical image of topside package / Figure 2: (SN5) Optical image of backside package /
package markings. No damage or defects present. package markings. No damage or defects present.

Figure 3: (SN5) Xray image of unit, top view. No Figure 4: (SN5) Xray image of unit, side view. No
problems found. problems found.

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 Product Analysis Laboratory
Report #: S220912-228

Figure 5: SAT analysis images, topside reflection mode, focus on top of the die/leads. Images in top window are
peak amplitude images. Images in bottom window are phase inversion (delamination) images.
Unit order, left to right: CONTROL,
No Delamination (red pixels) detected.

UNIT DIE1 DIE2

IDSS IGSS -IGSS VTH IDSS IGSS -IGSS VTH
KGU 44.60nA 2.51nA -27.30nA 0.36V 80.50nA 2.86nA -32.70nA 0.41V
SN1 44.40nA 4.76nA -31.0nA 0.44V SHORT 5.15nA -22.30nA SHORT
SN2 SHORT 9.80nA 24.40nA SHORT -0.55nA 8.40nA -26.80nA 0.54V
SN3 SHORT -0.60nA -15.50nA SHORT -6.0nA 0.90nA -28.60nA 0.55V
SN4 SHORT 5.80nA -28.0nA SHORT -4.0nA 9.05nA -25.0nA 0.58V
SN5 SHORT 100uA@4 100uA@- SHORT -0.24nA 6.40nA -26.80nA 0.60V
.90V 4.18V

# PASS # FAILED

Test condition:-
IDSS<100nA@16.0V
IGSS<100nA@5.0V
-IGSS<-100nA@5.0V
VTH=0.40V-1.0V@ID=250uA

Figure 6: Summary of electrical verification.

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Product Analysis Laboratory
Report #: S220912-228
Figure 7: (SN5) Photoemission
Microscopy (PEM) analysis site
identified with die biased
IDSS=25uA@1.80V. Abnormal die
pattern observed.

Figure 8: (SN5) Close up view image at

the emission site area. Abnormal
pattern observed.

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 Product Analysis Laboratory
Report #: S220912-228

Figure 9: (SN5) IR image inspection showed sign of wafer fabrication defect.

DIE1 LEFT RIGHT

DIE2

Figure 10: (SN4) Overall view of the unit after removed Figure 11: (SN4) Close up view image at Die 1. No
the mold compound. anomaly.

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 Product Analysis Laboratory
Report #: S220912-228

Normal
Abnormal
Pattern
pattern

LEFT RIGHT

Figure 12: (SN4) Close up view image at left side as Figure 13: (SN4) Close up view image at right side.
reference. Anomalous pattern observed.

Normal Abnormal
pattern pattern

LEFT RIGHT

Figure 14: (SN4) Close up view scanning electron Figure 15: (SN4) Close up view scanning electron
microscope (SEM) image at left side as reference. microscope (SEM) image at right side. Wafer fab defect
observed.

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 Product Analysis Laboratory
Report #: S220912-228

Figure 16: (SN4) High magnified view image at left side Figure 17: (SN4) High magnified view image at the
as reference. defect area.

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