Report #: S220208-039

ONRMS Rel ID:

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SBPN02QF1VR submitted six NIV2161MTTAG WDFN10 ESD Protection with Automotive Short-to-Battery/Ground
Blocking's for analysis. The customer's problem statement read: "Please Perform Full FA for reject Short.”

onsemi inspected the units thoroughly under an optical microscope and package markings were captured. No problems
were found during package inspection. Xray inspection showed no internal anomaly. Curve trace analysis showed that all
units failed for high IR leakage parameter at Pin 7 and Pin 9 with respect to Pin 8 (GND).

SN1 was further polished until half of the die to remove the N terminal of the diode. Pin to pin curve tracer analysis
between die substrate and respect to pin 8 (connected to flag) verified short junction. Top side fault isolation by using
Optical Beam Induced Resistive Change (OBIRCh) was performed and localized hotspot was detected at the edge of the
die when biasing at short junction between die substrate and respect to pin 8’.

In conclusion, the cause of failure was due to tilted die causing short/leakage from bottom die to flag area based on similar
failure signature in reference to ONPAMS# S211012-021 & S190708-082.

onsemi (M) Sdn. Bhd.Lot 122, Senawang Industrial Estate70450 Seremban, Negeri Sembilan, MalaysiaTel: +606-682 1870
 Product Analysis Laboratory
Report #: S220208-039
ONRMS Rel ID:

Figure 1: (SN1) - Optical image of topside package / package Figure 2: (SN1) - Optical image of backside package /
markings. No damage or defects present. Similar package markings. No damage or defects present. Similar
observation with other units. observation with other units.

Figure 3: (SN1) - X-ray image of unit, top view. No problems Figure 4: (SN1) - X-ray image of unit, side view. No problems
found. Similar observation with other units. found. Similar observation with other units.

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 Product Analysis Laboratory
Report #: S220208-039
ONRMS Rel ID:

Figure 5: (SN1) - Curve Tracer showed anomaly curve tracer Figure 6: The Diode die is having IR leakage as indicated by
on SN1 at Pin 7 & Pin 9 with respect to Pin 8. Similar the red box.
observation with other units.

Figure 7: (SN1) Units were performed top side polished.

Image illustration of the circuit structure after further top
side polished.

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 Product Analysis Laboratory
Report #: S220208-039
ONRMS Rel ID:

Figure 8: (SN1) Seebeck Effect Imaging (SEI) analysis site Figure 9: (SN1) Seebeck Effect Imaging (SEI) analysis site
identified with die biased 1.0uA @ 0V using 20X lens identified using 100X lens magnification.
magnification.

Figure 10: (SN1) Pin to pin curve tracer between pin8’

(connected to flag) and Die substrate showed a short
junction.

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