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Màng Oxit Kim Loại Chuyển Tiếp
Màng Oxit Kim Loại Chuyển Tiếp
METAL OXIDES
Tjipke Hibma
Materials Science Centre, University of Groningen, The Netherlands
Contents
Ultimate goal:
Epitaxial growth of perfect thin layers with atomic
precision onto (selected parts of) a single
crystalline substrate, in order to manipulate
materials properties (or to design ultrathin
devices).
Introduction
Manipulation of materials properties by
• Substrate influence
enforcement of geometric, magnetic and electronic structure
(metastable phases, exchange bias, proximity effects, ..)
• Finite size
thickness < characteristic length
(quantum wells, ballistic transport,..)
• Epitaxial strain
deformation
(bandgap, level splittings)
• Artificial stacking
new layered compounds or structures
(high-Tc, new ferromagnetic(-electric) compounds)
Introduction
LaCrO3-LaFeO3 Atomic Superlattices
K.Ueda, H.Tabata, T. Kawai, Science 280 (1998) 1064
Goodenough-Kanamori rules:
Cr3+-O-Fe3+ (d3-d5) 180°-superexchange
interaction is Ferromagnetic
Thin film deposition
Advantages of MBE :
• High purity elemental
sources
• Abrupt interfaces
• RHEED growth control
• In-situ surface analysis
Disadvantages of MBE :
• Slow
• Sophisticated and
expensive UHV
equipment
• Multi-element rate
control difficult
Thin film deposition
(UHV-) Pulsed Laser Deposition (PLD)
Advantages of PLD :
• Suitable for complex
materials
• Fast and flexible
• (RHEED growth control)
• (In-situ surface
analysis)
Disadvantages of PLD :
• Particulates
• Loss of volatile elements
• Small area deposition
Atomic layer-by-layer growth
Growth processes
Main Growth Parameters
Deposition
Energies En
Growth
Diffusion Nucleation
Mixing Temperature T
Atomic layer-by-layer growth
Epitaxy Substrate
Atomic absorption
flux control and
computer controlled
shuttering of
individual K-cell.
Kiểm soát cân bằng
Stoichiometry Control hóa học
Stoichiometric MnOm
excess oxygen
Nonstoichiometric MxOy
vary FM/FO, determine x afterwards:
• Fe3-dO4, Moessbauer Spectroscopy
• CrOx , XPS
• VOx, TiOx (0.8<x<1.3), 18O-RBS
Stoichiometry Control
18O- RBS
V O /A l2O V O x
capped
2 3 3
I n t e n s it y ( a r b .u n it s )
I n te n s ity (a r b . u n its )
18
O
1 6
O
5 1
1 8 V
O
2 7
A l V O uncapped
x
16
O 18
O
B a c k s c a tte r in g e n e r g y (k e V ) B a c k s c a tte r in g e n e r g y (k e V )
1 .4
1 .3
x -O x y g e n c o n te n t
1 .2
1 .1
1 .0
0 .9
0 .8
0 .7
0 .6
0 .5
0 .4
3 4 3 2 3 0 2 8 2 6 2 4 2 2 2 0 1 8 1 6 1 4 1 2 1 0 8
O x y g en p ressu re (m V )
Surface “Chemistry”
• Elements
surface diffusion, nucleation
• Binary Oxides
diffusing species: M, O, MO ??
• Complex Oxides
?????
Epitaxy
• Epitaxy
= Well-defined orientation relationship between
substrate and film lattice.
• Coherent epitaxy
a||film = a||substrate
strain:
|| = f
2
⊥ = − || − f
1−
(misfit f = Da/a)
Epitaxy
Critical Thickness
Energy E →
Strain
Dislocation formation energy
Dislocation
energy
tc thicknes t →
Critical thickness:
b(1 − cos2 ) FG IJ
tc
tc =
8 f o (1 + ) sin cos
ln
H K
b
Epitaxy
Critical Thickness of CoO/MgO(001)
k K k’
2q
0.010 Experiment
Strain in the CoO/MgO
Theory 10000
0.008 2
1000
0.006 100
10
0.004 5
36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 46.0
0.002
(002)- reflections of
0.000 film and substrate
0 200 400 600 800 1000
Layer thickness (A)
Epitaxy
K
Non-specular diffraction spots k’
k
coherent growth 2q
Reciprocal space
K
Epitaxy
K
Non-specular diffraction spots k’
k
relaxed growth 2q
Reciprocal space
Morphology
The three growth modes
“Wetting Criterion”
Layer-by-layer film
+ int erface substrate b
substrate + C ln p / p0 g
supersaturation favors lbl growth
Layer + 3D islands
3D-islands
Morphology
RHEED
MgO(001) Fe3O4/MgO(001)
k’
k
Morphology
RHEED
Patterns Reciprocal
Lattice
Reciprocal
Lattice
Rods Rods
Allowed
Reciprocal Reciprocal
Lattice lattice
Vectors points
TiOx/MgAl2O4(001)
vacancy ordered phase
Morphology
RHEED Oscillations
Do not explain
- phase shifts !!!
- in-/out of phase
amplitude
- damping
due to dynamic and
incoherent scattering
effects)
1
Intensity (arb units, log. scale)
Reflectivity (experiment)
0
Simulation
-1
-2 k K k’
-3
-4 2q
-5
-6
-7
0 1 2 3 4
Theta (degr.)
Manipulation of properties
• Substrate influence
enforcement of geometric, magnetic and electronic structure
(metastable phases, exchange bias, proximity effects, ..)
• Finite size
thickness < characteristic length
(quantum wells, ballistic transport,..)
• Epitaxial strain
deformation
(bandgap, level splittings)
• Artificial stacking
new layered compounds or structures
(high-Tc, new ferromagnetic(-electric) compounds)
Manipulation of properties
Transition metal oxides TMO
• Substrate influence
- new phases, CrOx, TiOx ,Sr(N,O)
- Anti-Phase Boundaries, Fe3O4
• Finite size
- Electronic structure of NiO
- Superparamagnetism in Fe3O4
• Epitaxial strain
- MI-transition in VOx
- Tetragonal distortion in CoO
• Artificial stacking
- OFeOFeO non-polar initial phase on Al2O3
- new ferro-magnetic(electric) materials
Substrate influence
Metastable Chromium Monoxide CrxO
(O. Rogojanu)
(0 0 4) Refinement of
data collected
(-1-1 3) at ID10,ESRF:
1/3 Cr-sites
LEED pattern of are vacant
CrOx/MgO(001) (-2-2 2) (0 0 2)
c
(-1-1 1) z
Areal XRD picture y x
of CrOx/MgO(001). (-2-2 0) a
b
Epitaxial Strain
Coherent VOx layers on MgO and STO
(002)MgO
VOx on MgO
(004)MgO
(aMgO=4.21 Å)
(002)VOx VO(113) tensile strain
(004)VOx
MgO(113)
MgO(113)
(002)STO
STO(113) VOx on STO
(004)STO
(aSTO=3.90 Å)
VO(113) compressive strain
(002)VOx
(004)VOx
(004)VOx
2Theta-omega scan
Epitaxial Strain
MI-transition in strained VOx layers
(A.D.Rata)
SC
x = 0 .8 2
c m )
H = 0 T
R e s is t iv it y ( o h m
-4
1 0 H = 5 T
-5
1 0
0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0
T (K )
Epitaxial Strain
XMLD of strained CoO (S. Csiszar, M. Haverkort, H. Tjeng)
+
0.3
t2g 0.2
dxy 0.1
0.0
Photon energy h
Stretched CoO layer, 2.5
-1.0
770 775 780 785
a-Al2O3(0001)
Fe3O4 (111)
FeO type
reciprocal lattice (111)
(0,3)
(1,1)
b* a*
End
t ~ 105s
Start
t = 0s
Final remarks
MSC-cooperations :
Tjeng, Sawatzky (electron spectroscopy)
Niesen, Boerma (Moessbauer spectroscopy, RBS)
Palstra (transport measurements)