EXPERIMENT 3

Aim:

To determine the resistivity of the given semiconductor by four probe method.

Apparatus Required:

Four probe arrangement , oven, constant current generator, oven power supply, sample of
semiconductor crystal(Ge)

Theory:

For a slice of thickness ‘w’ and the resisitivity is computed as :

ρ(rho) = ρo/f(w/s)

The function f(w/s) is a divisor for computing resistivity which is dependent on the value of w and s.

We assume that the size of the metal tip is infinitely small and sample thickness is greater than the
distance between the probes.

ρ0 = (v/i)*2*3.14*s

where v = the potential difference between inner probes in volts.

i = current through the outer pairs of the probes.

s = spacing between the probes in meters.

Procedure:

1) initially the current was switched on.

2) The current meter was adjusted to a desired current value.

3) The oven was switched on.

4) The semiconductor was heated upto 60 degree celsius.

5) The oven was then switched off and the semiconductor was allowed to cool.

6) Readings were noted corresponding to every 5 k fall in temperature.

7) Graph was plotted between resistivity vs temperature.

Observation:

Constant current= 0.11mA

Distance between 2 probes(d)=0.2cm

Thickness of crystal(w)=0.05cm
F(w/d)=6.93

S. No. Temperature(K) Voltage(v) Ρo=(V/I)*2*3.14*d ρ = ρo/f(w/d) ln ρ Eg=2KTlnρ

(mV) (10-13)
1. 333 1.6 4.567 0.6590 -0.417 -0.383
2. 328 0.9 2.355 0.339 -1.079 -0.976
3. 323 0.9 2.826 0.406 -0.90 -0.802
4. 318 0.6 2.093 0.302 -1.197 -1.051
5. 313 0.4 1.57 0.226 -1.487 -1.284

Mean band gap: -0.8892*10-13

Result:

Graph between resistivity and temperature was drawn.

The resistivity of given semi-conductor is 0.3865 ohm cm.

The mean band gap is 0.8892*10-13.

Preacutions:

Heat the oven carefully and uniformally.

The temperature should be noted carefully.

Zero adjustment must be done before taking reading.

Sources of Error:

The probe may not be equally spaced.

There may be zero error in voltmeter.