Lab Report

Course Name : Electronic Circuit-I

Course Code : EEE102
Experiment No :01
Experiment Name : I-V Characteristics and modeling of
forward conduction of a Diode

Group Number : 02
Group Members :
Name ID Signature
1. Md. Solayman Khan 2013-1-80-022 ____________
2. Faisal Ahmed 2013-1-80-016 ____________
3. Shamima Akter 2012-3-80-014 ____________

Date of Experiment : --/--/2014

Date of Submission : --/--/2014

Rony Kumer Saha __________

Instructor Name Signature

Report approval status: Approved

Partially approved
Not approved
Problem Statement:
In this experiment, we are supposed to find out the basic
characteristics of a p-n junction diode .We will also find out
the I-V characteristics and also will model the forward
conduction of a Diode.

Objective Of The Experiment:

The main objective of this experiment was to measure the I-V
characteristics and also to find the large and small signal
models of forward conduction of p-n junction diode.

Significance Of The Experiment:

The main significance of this experiment is that , this
experiment allows us to know the characteristics of p-n
junction diode.
Required Component And Instrument:
1. Diode (1pc)
2. Resistor (1K-ohm) [ Measured 0.983 K-ohm]
3. Digital multimeter

Experimental Set Up:

At first we have to set the diode and resister into the
breadboard and make a series circuit. Then we have to
connect the wears with sources. After that, we have to find the
expected values and make a graph for I-V characteristics. At
last, we have to define the errors during experiment and make
a conclusion on how to overcome.
Experimental Data Table:

V D (volt) V R (volt) I D (mA) = V R /R (K-

Ohm)
0 0 0
0.43 0.04 0.0407
0.53 0.46 0.4679
0.57 0.91 0.9257
0.59 1.39 1.414
0.60 1.91 1.943
0.61 2.41 2.451
0.62 2.92 2.970
0.63 3.36 3.4181
0.64 3.85 3.9163
0.64 4.34 4.415
0.65 4.84 4.9237
0.65 5.34 5.4323
0.66 5.83 5.9308
0.66 6.32 6.4292
0.67 6.81 6.9277
0.67 7.32 7.4465
0.67 7.80 7.9348
0.68 8.33 8.4740
0.68 8.79 8.9420
0.68 9.32 9.4811
0.68 9.82 9.9898
0.69 10.30 10.4781
0.69 10.83 11.0103
0.69 11.32 11.515
Required Calculation:
From the data table we know,
If V D = 0.6 volt then V R = 1.91 volt and R=0.983 K-ohm (by
measured)
To find I D we use,
I D = V R /R
1.91
Or, I D = 0.983
= 1.943 A
We always get the value of I D by using this equation. There
are another equations which required to solve the lab but that
part will include in appendices and lab report question.
Result:
In the experiment, We find I D =1.91 mA For V R = 1.91volt

Result Analysis:
If we consider theoretically than R = 1 K-ohm (given in lab
manual )
Then if V R = 1.91volt
1.91
We find I D = 1 = 1.91 mA

The difference between measured and theoretical value is =

(1.943 – 1.91) mA
=
0.033 mA

Recommendation:
1. The error is not significant because due to equipment error
such as in lab manual there given that R is 1 K-ohm but by
measuring we find that R is 0.983 k-ohm. For that there is no
trouble during the time of lab. It is too little difference, so
there no effect on resistor and it gives proper value.
 Report Question And Answer
Answer to the question no 1
14
I(mA)

12

10

Y-Values

0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

-2

Graph-1: Graph of the I-V characteristics using

experimental Data
 Answer to the question no 2
When I D1 = 2mA then V D1 = 0.6040 V
And I D2 = 2.5mA then V D2 = 0.6145 V

Now to find n we can use this equation ,

V D2 -V D1 =nV T ln(I D2 /I D1 )
=>n =V D2 -V D1 /V T ln(I D2 /I D1 )
(0.6145 −0.6040)
=>n= 2.5
0.0259 ln ( )
2

=>n =1.82
I D = I Se[V D \nV T ]
=>I S = I D / e^[V D /nV T ]
=>I S = 2/ e^[0.604/1.82×0.0259]
= 0.0058 mA

Answer to the question no 3

Here the cut in or built in voltage is V DO = 0.56 V

 Answer to the question no 4

When I D = 2mA, V D = 0.6040 V

Now, V D = V DO + I D r D
r D = (V D -V D0 )/I D
= (0.6040 – 0.56)/2
= 0.022 K

Answer to the question no 5

Small signal resistance, r d=nV T / ID

=(1.82×0.0259)/2
=0.0234K
Value of r d Value of r D
0.0234K 0.022K

Comment: The values of r D andrd are same . There is a little bit

difference between (0.0234 -0.022) K = 0.001 which must be
avoidable.
 Answer to the question no :6

Figure1:Figure for the experimental circuit

Figure2:Simulated result of circuit 1

Conclusion:
From this lab , we have learned about the characteristics of
diodes. From this experiment we’ve learn that Diodes will
prevent currents in reverse directions. From the I vs. V
characteristics we know about forward, reverse and no bias
concept. Our concept is increasedabout diode and I vs. V
characteristics by doing this experiment .

Reference:
1. Electrical devices and circuit theory by Robert L. boylestad
and L.nashelsky.
2. Microelectronic Circuits by Sedra Smith .
3. http://en.wikipedia.org/diodes
Appendix:
1. To do the experiment easily ohms law helps us. By using
ohms law we can easily find voltage and current.
2. We can easily find the I vs. V characteristics by using
Shockley ideal equation.
The equation state that,

Where,
I is the diode current
I S is the reverse bias saturation current (or scale current)
V D is the voltage across the diode
V T is the thermal voltage, and
n is the ideality factor.
3. We can also use piecewise linear model to understand the
lab easily.
The equation is VD = V DO + I D r D
Attachments:
These items are attached on the end of the report--
1.Signed data sheet
2.Signed graph paper