APM4354KP

N-Channel Enhancement Mode MOSFET

Features Pin Description

• 30V/70A, D D
D
D
RDS(ON) =4.5mΩ (typ.) @ VGS = 10V
G
RDS(ON) =6mΩ (typ.) @ VGS = 4.5V S
• Super High Dense Cell Design S
S

• Avalanche Rated
Top View of KPAK
• Reliable and Rugged
• Lead Free and Green Devices Available DD DD

(RoHS Compliant)

Applications G

• Power Management in Notebook Computer, or

Decktop Computer.
S S S

N-Channel MOSFET

Ordering and Marking Information

APM4354 Package Code
KP : KPAK
Assembly Material Operating Junction Temperature Range
Handling Code C : -55 to 150 oC
Temperature Range Handling Code
Package Code TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device

APM4354 KP : APM4354 XXXXX - Date Code

XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termina-
tion finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 30
V
VGSS Gate-Source Voltage ±20
TJ Maximum Junction Temperature 150 °C
TSTG Storage Temperature Range -55 to 150 °C
IS Diode Continuous Forward Current TC=25°C 50 A
TC=25°C 150
IDP 300µs Pulse Drain Current Tested A
TC=100°C 90
Mounted on Large Heat Sink
TC=25°C 70
ID Continuous Drain Current A
TC=100°C 40
TC=25°C 50
PD Maximum Power Dissipation W
TC=100°C 20
RθJC Thermal Resistance-Junction to Case 2.5 °C/W
2
Mounted on PCB of 1in pad area
TA=25°C 17
ID Continuous Drain Current A
TA=100°C 11
TA=25°C 2.5
PD Maximum Power Dissipation W
TA=100°C 1
RθJA Thermal Resistance-Junction to Ambient 50 °C/W
Mounted on PCB of Minimum Footprint
TA=25°C 14
ID Continuous Drain Current A
TA=100°C 8
TA=25°C 1.5
PD Maximum Power Dissipation W
TA=100°C 0.5
RθJA Thermal Resistance-Junction to Ambient 75 °C/W

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM4354KP
Symbol Parameter Test Conditions Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V
VDS=24V, VGS=0V - - 1
IDSS Zero Gate Voltage Drain Current µA
Tj=85°C - - 30
VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 1.8 2.5 V
IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA

a VGS=10V, IDS=30A - 4.5 5.5

RDS(ON) Drain-Source On-state Resistance mΩ
VGS=4.5V,IDS=20A - 6 8
Diode Characteristics
a
VSD Diode Forward Voltage ISD=20A, VGS=0V - 0.75 1.1 V
trr Reverse Recovery Time - 36 - ns
IDS=20A, dlSD/dt=100A/µs
Qrr Reverse Recovery Charge - 29 - nC
b
Gate Charge Characteristics
Qg Total Gate Charge - 63 88
VDS=15V, VGS=10V,
Qgs Gate-Source Charge - 10 - nC
IDS=30A
Qgd Gate-Drain Charge - 19 -
b
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1 - Ω
Ciss Input Capacitance - 3350 -
VGS=0V,
Coss Output Capacitance VDS=15V, - 425 - pF
Frequency=1.0MHz
Crss Reverse Transfer Capacitance - 330 -
td(ON) Turn-on Delay Time - 24 44
tr Turn-on Rise Time VDD=15V, RL=15Ω, - 23 42
IDS=1A, VGEN=10V, ns
td(OFF) Turn-off Delay Time RG=6Ω - 73 132
tf Turn-off Fall Time - 27 50
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Typical Operating Characteristics

Power Dissipation Drain Current

60 80

70
50
60

ID - Drain Current (A)

40
Ptot - Power (W)

50

30 40

30
20
20

10
10
o
TC=25 C
o TC=25 C,VG=10V
0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)

Safe Operation Area Thermal Transient Impedance

400 2
Normalized Transient Thermal Resistance

1 Duty = 0.5
100 it
Lim 0.2
n)
s(o 1ms
ID - Drain Current (A)

Rd 0.1
10ms 0.05
0.1
10 0.02
100ms

1s 0.01
DC
0.01 Single Pulse
1

2
Mounted on 1in pad
o o
TC=25 C RθJA :50 C/W
0.1 1E-3
0.1 1 10 80 1E-4 1E-3 0.01 0.1 1 10 100

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Typical Operating Characteristics (Cont.)

Output Characteristics Drain-Source On Resistance

150 12
VGS= 5,6,7,8,9,10V

10

RDS(ON) - On - Resistance (mΩ)

120 4.5V
VGS=4.5V
ID - Drain Current (A)

8
90

4V 6
VGS=10V
60
4

3.5V
30
2
3V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 30 60 90 120 150

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Gate-Source On Resistance Gate Threshold Voltage

16 1.6
ID=30A IDS =250µA
14 1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)

12 1.2

10 1.0

8 0.8

6 0.6

4 0.4

2 0.2

0 0.0
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)

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Rev. A.2 - Jan., 2009
APM4354KP

Typical Operating Characteristics (Cont.)

Drain-Source On Resistance Source-Drain Diode Forward

1.8 200
VGS = 10V

1.6 IDS = 30A 100

Normalized On Resistance

1.4

IS - Source Current (A)

o
Tj=150 C

1.2
o
Tj=25 C

1.0 10

0.8

0.6
o
RON@Tj=25 C: 4.5mΩ
0.4 1
-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5 1.8

Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge

5000 10
Frequency=1MHz VDS= 15V
4500 9
ID= 30A
VGS - Gate - source Voltage (V)

4000 8

3500 7
C - Capacitance (pF)

Ciss
3000 6

2500 5

2000 4

1500 3

1000 2

500 Coss 1
Crss
0 0
0 5 10 15 20 25 30 0 10 20 30 40 50 60 70

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Avalanche Test Circuit and Waveforms

VDS
L VDSX(SUS)
tp
DUT VDS
IAS
RG
VDD
VDD
tp IL EAS
0.01Ω

tAV

Switching Time Test Circuit and Waveforms

VDS
RD
VDS
DUT 90%

VGS
RG
VDD

10%
tp VGS
td(on) tr td(off) tf

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.2 - Jan., 2009
APM4354KP

Package Information
KPAK

F1
F

H
E1

G1
G

D
A
C

e B

S KPAK
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 1.00 1.20 0.039 0.047

B 0.38 0.51 0.015 0.020

C 0.19 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 5.90 6.10 0.232 0.240

E1 5.70 5.80 0.224 0.228

e 1.27 BSC 0.050 BSC

F 0.05 0.15 0.002 0.006

F1 0.35 0.45 0.014 0.018

G 0.05 0.15 0.002 0.006

G1 0.35 0.45 0.014 0.018

H 3.49 3.69 0.137 0.145

K 1.60 0.063

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Rev. A.2 - Jan., 2009
APM4354KP

Carrier Tape & Reel Dimensions

OD0 P0 P2 P1 A

E1
F

W
B0

K0 A0 OD1 B A
B

SECTION A-A

T
SECTION B-B

d
H
A

T1

Application A H T1 C d D W E1 F

330.0±2.00 50 MIN. 12.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.10
-0.00 -0.20
KPAK P0 P1 P2 D0 D1 T A0 B0 K0

4.0±0.10 8.0±
0.10 2.0±0.10 1.5+0.10 1.5 MIN. 0.3±0.05 6.5±0.10 5.3±0.10 1.4±0.10
-0.00
(mm)

Devices Per Unit

Package Type Unit Quantity
KPAK Tape & Reel 2500

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Rev. A.2 - Jan., 2009
APM4354KP

Taping Direction Information

KPAK

USER DIRECTION OF FEED

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
TL to TP
Ramp-up

TL
Temperature

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 °C to Peak
25

Time
Reliability Test Program
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245°C, 5 sec
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125°C
PCT JESD-22-B, A102 168 Hrs, 100%RH, 121°C
TST MIL-STD-883D-1011.9 -65°C~150°C, 200 Cycles

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Rev. A.2 - Jan., 2009
APM4354KP

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3°C/second max. 3°C/second max.
(TL to TP)
Preheat
100°C 150°C
- Temperature Min (Tsmin)
150°C 200°C
- Temperature Max (Tsmax)
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183°C 217°C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5°C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6°C/second max. 6°C/second max.
Time 25°C to Peak Temperature 6 minutes max. 8 minutes max.
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3 3
Package Thickness Volume mm Volume mm
<350 ≥350
<2.5 mm 240 +0/-5°C 225 +0/-5°C
≥2.5 mm 225 +0/-5°C 225 +0/-5°C

Table 2. Pb-free Process – Package Classification Reflow Temperatures

3 3 3
Package Thickness Volume mm Volume mm Volume mm
<350 350-2000 >2000
<1.6 mm 260 +0°C* 260 +0°C* 260 +0°C*
1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C*
≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.

Customer Service

Anpec Electronics Corp.

Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838

Copyright  ANPEC Electronics Corp. 11 www.anpec.com.tw

Rev. A.2 - Jan., 2009