85HF / 85HFR

NAINA
SILICON POWER DIODE

DO-5

FEATURES
• Diffused Series
7
• Available in Normal & Reverse Polarity POLARITY
• Industrial Grade A C Ø 4.0
27
• Available In Avalanche Characteristic C A 12
Normal Reverse
* Available in metric and UNF thread 17 A/F 11.5

ELECTRICAL SPECIFICATIONS M8 x 1.25

16
IF Maximum Average Forward 85A
Current T=1250C Ø 8.0
V FM Maximum peak forward 1.4V
voltage drop @ Rated IF(AV) POLARITY
IFSM Maximum peak one cycle 1270 A A C
(non-rep) surge current 10 m sec C A
Normal Reverse
IFRM Maximum peak repetitive surge current 405 A
32
12
I2t Maximum I2t rating (non-rep.) for 5 to 10 8064 17 A/F
11.5
msec. A2 Sec M 8 x 1.25

THERMAL MECHANICAL SPECIFICATIONS

θ JC Maximum thermal resistance Junction to case 0.500C/W

Tj Operating Junction Temp. -650C to 1500C
Tstg Storage temperature -650C to 2000C
Mounting torque 0.4 M-kg min,
(Non-lubricated threads) 0.6 M-kg max
W Approx, weight 13.5 & 30 gms.
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ELECTRICAL RATINGS

TYPE 85HF/HFR 10 20 40 60 80 100 120 140 160

VRRM Max. repetitive peak reverse 100 200 400 600 800 1000 1200 1400 1600
voltage (v)

VR(RMS) Max. R.M.S. reverse voltage(V) 70 140 280 420 560 700 840 980 1120

VR Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600

Recommended R.M.S. working

40 80 160 240 320 400 480 560 640
Voltage(v)
IR(AV) Max. Average reverse leakage
200 200 200 200 200 200 200 200 200
current @ VRRM Tc 250C uA

NAINA SEMICONDUCTOR LTD.,

D-95,SECTOR 63 NOIDA(INDIA)
e-mail: sales@nainasemi.com , web site: www.nainasemi.com