Nepal College of Information Technology ii) P.I.V.

Unit Test
Fall 2010 4. a) For the given ckt. Below
Program: B.E.CE/ELX Time: 2 hrs
Semester: Fall (III) FM: 70
Subject: Electronic Device PM: 35
Attempt all questions
1. a. What is doping? Discuss about N-type and P-type semiconductors in
detail.
b. Describe the process of formation of depletion layer in brief. i) Sketch the output waveform. 4
2. a. What is zener diode? Describe the V-I characteristics of zener diode. ii) Describe the process. 3
b. For the network below, determine; b) Sketch the output waveform for the ckt. given below. It is given that
discharging time constant is much greater than the time
period of input wave.

i) The range of and that will result in being maintained at

10V.
ii) Maximum power rating of the diode.

3. a. What is rectifier? Describe the working principle of bridge fullwave 5. Write short notes on
rectifier. a) Hole current
b. Figure shows circuit of centre tapped fullwave rectifier. b) Varactor diode
c) Zener diode as voltage regulator.

Determine:
i) Average power delivered to load.