SOT223 NPN SILICON PLANAR MEDIUM

FZT603 POWER DARLINGTON TRANSISTOR FZT603

ISSUE 3 – NOVEMBER 1995
PACKAGE OUTLINE DETAILS FEATURES
* 2A continuous current
C
Dim Millimeters Inches * Useful hFE up to 6A
Min Max Min Max * Fast Switching

A 6.3 6.7 0.248 0.264 E

PARTMARKING DETAIL – DEVICE TYPE IN FULL
B 3.3 3.7 0.130 0.146 C
C – 1.7 – 0.067 B
D 0.6 0.8 0.024 0.031
E 2.9 3.1 0.114 0.122 ABSOLUTE MAXIMUM RATINGS.
F 0.24 0.32 0.009 0.013 PARAMETER SYMBOL VALUE UNIT

G NOM 4.6 NOM 0.181 Collector-Base Voltage VCBO 100 V

H 0.85 1.05 0.033 0.041 Collector-Emitter Voltage VCEO 80 V

K 0.02 0.10 0.0008 0.004 Emitter-Base Voltage VEBO 10 V

L 6.7 7.3 0.264 0.287 Peak Pulse Current ICM 6 A

M NOM 2.3 NOM 0.0905 Continuous Collector Current IC 2 A

Power Dissipation Ptot 2 W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO 100 240 V IC=100µA
Breakdown Voltage
Collector-Emitter V(BR)CEO 80 110 V IC=10mA*
Breakdown Voltage
Emitter-Base Breakdown V(BR)EBO 10 16 V IE=100µA
Voltage
Collector Cut-Off Current ICBO 0.01 µA VCB=80V
10 µA VCB=80V, Tamb=100°C
Emitter Cut-Off Current IEBO 0.1 µA VEB=8V
Collector Cut-Off Current ICES 10 µA VCES=80V
Collector-Emitter VCE(sat) 0.79 0.88 V IC=0.25A, IB=0.25mA*
Saturation Voltage 0.80 0.90 V IC=0.4A, IB=0.4mA*
0.88 1.00 V IC=1A, IB=1mA*
0.99 1.13 V IC=2A, IB=20mA*
0.86 V IC=2A, IB=20mA †
† Tj=150°C
 FZT603 FZT603
ELECTRICAL CHARACTERISTICS (Continued) TYPICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
1.8 -55°C 2.5 -55°C

- Gain normalised to 1 Amp

+25°C +25°C
Base-Emitter VBE(sat) 1.7 1.95 V IC=2A, IB=20mA* 1.6 +100°C
+175°C
+100°C
VCE =5V
Saturation Voltage 1.4 2.0

- (Volts)
1.2
IC /IB =100
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.75 V IC=2A, VCE=5V* 1.0
1.5

0.8

Static Forward hFE 3k 14k IC=50mA, VCE=5V*

1.0

0.6

Current Transfer Ratio 5k 15k 100k IC=500mA, VCE=5V*

V
0.4

3k 14k IC=1A, VCE=5V* 0.2

0.5

2k 10k IC=2A, VCE=5V*

2k IC=5A, VCE=5V*

h
0
0.01 0.1 1 10 0.001 0.01 0.1 1 10

750 IC=6A, VCE=5V*

IC - Collector Current (Amps) IC - Collector Current (Amps)
Transition Frequency fT 150 MHz IC=100mA, VCE=10V hFE v IC
f=20MHz VCE(sat) v IC

Output Capacitance Cibo 90 pF VEB=500mV, f=1MHz

2.2 -55°C -55°C
+25°C +25°C
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz 2.0 +100°C
+175°C
1.8 +100°C

- (Volts)
1.8
1.6

Switching Times ton 0.5 µs IC=0.5A, VCE=10V 1.6 1.4

- (Volts)
IB1=IB2=0.5mA 1.4 1.2

toff 1.6 µs 1.2

1.0 VCE =5V

IC/IB =100

V
1.0

*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%

0.8

V
Spice parameter data is available upon request for this device 0.8
0.6

0.6
0.4

0.4
0.2
0.01 0.1 1 10 0.01 0.1 1 10

IC - Collector Current (Amps)

IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC

Single Pulse Test

10
Tamb = 25 °C

1
DC
1s
100ms
10ms
1ms
0.1 100µS

0.01

0.1 1 10 100

V CE - Collector Voltage (Volts)

Safe Operating Area
 FZT603 FZT603
ELECTRICAL CHARACTERISTICS (Continued) TYPICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
1.8 -55°C 2.5 -55°C

- Gain normalised to 1 Amp

+25°C +25°C
Base-Emitter VBE(sat) 1.7 1.95 V IC=2A, IB=20mA* 1.6 +100°C
+175°C
+100°C
VCE =5V
Saturation Voltage 1.4 2.0

- (Volts)
1.2
IC /IB =100
Base-Emitter Turn-On Voltage VBE(on) 1.5 1.75 V IC=2A, VCE=5V* 1.0
1.5

0.8

Static Forward hFE 3k 14k IC=50mA, VCE=5V*

1.0

0.6

Current Transfer Ratio 5k 15k 100k IC=500mA, VCE=5V*

V
0.4

3k 14k IC=1A, VCE=5V* 0.2

0.5

2k 10k IC=2A, VCE=5V*

2k IC=5A, VCE=5V*

h
0
0.01 0.1 1 10 0.001 0.01 0.1 1 10

750 IC=6A, VCE=5V*

IC - Collector Current (Amps) IC - Collector Current (Amps)
Transition Frequency fT 150 MHz IC=100mA, VCE=10V hFE v IC
f=20MHz VCE(sat) v IC

Output Capacitance Cibo 90 pF VEB=500mV, f=1MHz

2.2 -55°C -55°C
+25°C +25°C
Output Capacitance Cobo 15 pF VCB=10V, f=1MHz 2.0 +100°C
+175°C
1.8 +100°C

- (Volts)
1.8
1.6

Switching Times ton 0.5 µs IC=0.5A, VCE=10V 1.6 1.4

- (Volts)
IB1=IB2=0.5mA 1.4 1.2

toff 1.6 µs 1.2

1.0 VCE =5V

IC/IB =100

V
1.0

*Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2%

0.8

V
Spice parameter data is available upon request for this device 0.8
0.6

0.6
0.4

0.4
0.2
0.01 0.1 1 10 0.01 0.1 1 10

IC - Collector Current (Amps)

IC - Collector Current (Amps)
VBE(sat) v IC VBE(on) v IC

Single Pulse Test

10
Tamb = 25 °C

1
DC
1s
100ms
10ms
1ms
0.1 100µS

0.01

0.1 1 10 100

V CE - Collector Voltage (Volts)

Safe Operating Area