PRACTICAL MANUAL

FOR

ELECTRONICS I
EEC124

ELECTRICAL/ELECTRONICS ENGINEERING
DEPARTMENT
THE FEDERAL POLYTECHNIC, ILARO, OGUN STATE.

1
ELECTRONICS 1 EEC124

Experiment Number: 1

Title of Experiment:
PN Junction Diode Characteristics

Objective:
1. To plot the characteristics of a PN junction Diode
Background Theory:
A PN Junction Diode is one of the simplest semiconductor devices, and has the
characteristic of passing current in one direction only. However, unlike a resistor, a diode
does not behave linearly with respect to the applied voltage as the diode has an
exponential current-voltage ( I-V ) relationship and therefore its operation cannot be
described by simply using an equation such as Ohm’s law.
When positive voltage (forward bias) is applied between the two ends of the PN junction,
it supply free electrons and holes with the extra energy they require to cross the junction
as the width of the depletion layer around the PN junction is decreased.
Application of a negative voltage (reverse bias) results in the free charges being pulled
away from the junction resulting in the depletion layer width being increased. This has
the effect of increasing or decreasing the effective resistance of the junction itself
allowing or blocking current flow through the diode.

Equipment Required:

TPS-3321/breadboard, One PN junction diode (IN4007 or equivalent), two voltmeters,

±12V variable power supply unit

Diagram:
VVAR

-12V>>12V

1 2

1k

1N4007

GND GND

2
 Figure 1 Circuit Diagram for Experiment 1

Procedure:

Forward Bias
1. Connect the circuit as shown in Figure 1.
2. Initially, vary the power supply in steps of 0.2V and record V f . Determine V R
from V R=V s – V f .
3. Once the current start increasing vary V s from 1V to 12V in steps of 1V and
record the corresponding values of V f and I f .
4. Tabulate different forward current obtained for different forward voltages.

Reverse Bias
5. Repeat step (2) using negative values of the voltage.
6. Tabulate readings in (5)

Results:

Use the readings in Table 1 and Table 2 to plot the graph of I f against V f in each case.

Forward Bias
Table 1 Forward Bias Diode Readings
Vs Vf VR VR
If = 3
10 ×10
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8

3
Reverse Bias
Table 2 Reverse Bias Diode Readings
Vs Vf VR VR
If= 3
10 ×10
-1
-2
-3
-4
-5
-6
-7
-8

Experiment Number: 2

4
Title of Experiment:
Zener Diode Characteristics

Objective:
1. To plot the characteristics of a Zener Diode.
Background Theory:

A Zener diode is a special type of device designed to operate in the Zener breakdown
region. Zener diodes acts like normal p-n junction diodes under forward biased condition.
When forward biased voltage is applied to the Zener diode it allows large amount of
electric current and blocks only a small amount of electric current.
Zener diode is heavily doped than the normal p-n junction diode. Hence, it has very thin
depletion region. Therefore, Zener diodes allow more electric current than the normal p-n
junction diodes. Zener diode allows electric current in forward direction like a normal
diode but also allows electric current in the reverse direction if the applied reverse
voltage is greater than the Zener voltage. Zener diode is always connected in reverse
direction because it is specifically designed to work in reverse direction.

Equipment Required:
TPS-3331/breadboard, Zener diode (IN4733) or equivalent), two voltmeters, ±12V
variable power supply unit

Diagram:
VVAR

-12V>>12V

3 4

1k

1N4733A

GND GND

Figure 2 Circuit Diagram for Experiment 2

Procedure:

Forward Bias
5
 1. Connect the circuit as shown in Figure 2.
2. Initially, vary the power supply in steps of 0.2V and record
V f . Determine V R from V R=V s−V f .
3. Increase V s from 1V to 12V in steps of 1V and note down corresponding values
of
V f and I f .
4. Tabulate different forward current obtained for different forward voltages.

Reverse Bias
5. Repeat step (2) using negative values of the voltage.
6. Tabulate readings in (5)

Results:

Use the table in (4) and (6) above to plot the graph of I f against V f in each case.

Forward Bias

Table 3 Forward Bias Zener Diode Readings

Vs Vf VR VR
If = 3
10 ×10
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8

6
Reverse Bias

Table 4 Reverse Bias Zener Diode Readings

Vs Vf VR VR
If =
10 ×10 3
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10

7
 Experiment Number: 3

Title of Experiment:
Application of Zener Diode as a Voltage Regulator

Objective:
1. To understand the use of Zener diode as voltage stabilizers.

Background Theory:
A Zener diode is a p-n junction semiconductor device designed to operate in the reverse
breakdown region. The breakdown voltage of a Zener diode is carefully set by controlling
the doping level during manufacture. The name Zener diode was derived after the
American physicist Clarance Melvin Zener who discovered the Zener effect. Zener
diodes are the basic device used in electronic regulation circuits. They are widely used in
all kinds of electronic equipments. Zener diodes are mainly used to protect electronic
circuits from excessively high voltage levels.

Equipment Required:
TPS3331/breadboard, n-p-n general purpose transistor 2N2222, Zener diode IN4733A,
1KΩ, 2kΩ resistor, voltmeter, power supply unit with variable range 0-12v
Diagram:

8
 Q1
2N2222
Vin
Vout

R1
R2
2k 1k

D1
1N4733A

GND
Figure 3 Circuit Diagram for Experiment 3

Procedure:
1. Connect the circuit as shown in Figure 3.
2. Connect the variable power supply to the input of the circuit at V ¿.
3. Adjust the input voltage from 6V to 10V in steps of 1V and record value of V out .
Results:
1. Compare the change in the output voltage to the change in the input voltage and
confirm if the Zener diode in this circuit has provided voltage regulation.
2. Calculate the percentage regulation in this circuit.

Table 5 Voltage Regulator Readings

V ¿(V) V out (V)
6
7
8
9
10

9
 Experiment Number: 4

Title of Experiment:
Output Characteristics of an NPN transistor in Common Emitter Mode

Objective:
1. To plot the characteristics of an NPN transistor in Common Emitter Mode
Background Theory:
The output characteristics describes the relationship between output current (IC) and
output voltage (VCE). The output current or collector current (IC) is plotted along vertical-
axis while the output voltage (VCE) is plotted along horizontal-axis. To determine the
output characteristics, the input current or base current I B is kept constant at 0μA and the
output voltage VCE is increased from zero volts to different voltage levels. For each level
of output voltage, the corresponding output current (IC) is recorded. In common emitter
configuration, the base is the input terminal, the collector is the output terminal and the
emitter is the common terminal for both input and output. This means the base terminal
and common emitter terminal are known as input terminals whereas collector terminal
and common emitter terminal are known as output terminals. The common emitter (CE)
configuration is the most widely used transistor configuration.

Equipment Required:
TPS-3371/breadboard, n-p-n general purpose transistor, IN4007 diode, Two 200KΩ
resistor, ammeters, voltmeters, power supply unit with variable output

Diagram:

10
 Vvar (-12V>>12VDC)

+12VDC D1
1N4007

R3
10k
V!
R1 R2
200k 100k

Q1
2N2222
VCE
SW1

GND

Figure 4 Circuit Diagram for Experiment 4

Procedure:
1. Connect the circuit as shown in Figure 4.
2. Connect the power supply as shown and adjust the variable supply to 0V.
3. Open switch SW5, this set the base current I b at about 40µA.
4. Adjust the variable supply gradually from 0 V to 5V in step of 1V and record the
V1
value of IC. I c = . V1 is voltage across test point 7 and 8.
1000
5. Close switch SW5, this set the base current at 60µA and repeat step (4).

11
Results:

Table 6 NPN Common Emitter Readings

I b = 40µA I b = 60µA
V CE (V) I c (mA) V CE (V) I c (mA)
1 1
2 2

3 3

4 4

5 5

Plot output characteristics I c against V CE

12
 Experiment Number: 5

Title of Experiment:
Output Characteristics of a PNP transistor in common Emitter mode

Objective:
To plot the characteristics of an PNP transistor in Common Emitter Mode

Background Theory:
The output characteristics describe the relationship between output current (IC) and output
voltage (VCE). A vertical line and a horizontal line is drawn first. The vertical line
represents y-axis and horizontal line represents x-axis. The output current or collector
current (IC) is taken along y-axis (vertical line) and the output voltage (VCE) is taken along
x-axis (horizontal line). To determine the output characteristics, the input current or base
current IB is kept constant at 0 μA and the output voltage VCE is increased from zero volts
to different voltage levels. For each level of output voltage, the corresponding output
current (IC) is recorded. In common emitter configuration, base is the input terminal,
collector is the output terminal and emitter is the common terminal for both input and
output. That means the base terminal and common emitter terminal are known as input
terminals whereas collector terminal and common emitter terminal are known as output
terminals. The common emitter (CE) configuration is the most widely used transistor
configuration.

Equipment Required:
TPS-3371/breadboard, p-n-p general purpose transistor, IN4007 diode, two 800KΩ
resistor, ammeters, voltmeters, power supply unit with variable output,
Diagram:

13
 Vvar (-12V>>12VDC)

-12VDC
D1
1N4007

R3
10k
V1
R1 R2
800k 800k

Q1
BC557
VCE
SW1

GND
Circuit Diagram for Experiment 5

Procedure:
1. Connect the circuit as shown above
2. Connect the power supply as shown and adjust the variable supply to 0v
3. Open switch SW8, this set the base current I b at about 15µA
4. Adjust the variable supply gradually such that V CE varies from 0 to −5V in steps
V1
of −1V and record the value of I c = V 1 is voltage across test point 12 and
1000
11.
5. Close switch SW8, this sets the base current to 7.5µA and repeat step (4)

14
Results:

Table 7 PNP Common Emitter Readings

I b = 7.5µA I b = 15µA
V CE (V) I c (mA) V CE (V) I c (mA)
1 1

2 2

3 3

4 4

5 5

Plot output characteristics I c against V CE

15
 Experiment Number: 6

Title of Experiment:
Output characteristics of an NPN transistor in common Collector mode

Objective:
To plot the characteristics of an NPN transistor in common Collector mode

Background Theory:
In this configuration, the base terminal of the transistor serves as the input, the emitter
terminal is the output and the collector terminal is common for both input and output.
Therefore, it is named as common collector configuration. The input is applied between
the base and collector while the output is taken from the emitter and collector. The output
characteristics describe the relationship between output current or emitter current ( I E ) and
output voltage or emitter-collector voltage (V EC). A vertical line and a horizontal line is
drawn first. The vertical line represents y-axis and horizontal line represents x-axis.
The output current or emitter current ( I E ) is taken along y-axis (vertical line) and the
output voltage or emitter-collector voltage (V EC) is taken along x-axis (horizontal line).
To determine the output characteristics, the input current I B is kept constant at zero micro
amperes and the output voltage V EC is increased from zero volts to different voltage
levels. For each level of output voltage V EC the corresponding output current I E is noted.
A curve is then drawn between output current I E and output voltage V EC at constant input
current I B(0 μA).

Equipment Required:
TPS-3371/breadboard, n-p-n general purpose transistor, IN4001 diode, Two 200KΩ
resistor, 100KΩ resistor, ammeters, voltmeters, power supply unit with variable output,

Diagram:

16
 Vvar 0>>12VDC
+12VDC

D1
1N4001

VCE
R1 R2 Q1
2N2222
400k 100k

SW1

R3
1k V1

GND
Circuit Diagram for Experiment 6

Procedure:

1. Connect the circuit as shown above

2. Connect the power supply as shown and adjust the variable supply to 0V.
3. Open switch SW1, this sets the base current I b at about 40µA.
4. Adjust the variable supply gradually such that V CE varies from 0 to 5V in steps of
V
1V and record the value of I c = 1
1000
5. Close switch SW1, this sets the base current to 60µA and repeat step 4.

17
Results:

Table 8 NPN Common Collector Readings

I b = 40µA I b = 60µA
V CE (V) I E (mA) V CE (V) I E (mA)
1 1
2 2

3 3

4 4

5 5

Plot output characteristics I E against V CE

18
 Experiment Number: 7

Title of Experiment:
Output characteristics of an PNP transistor in common Collector mode

Objective:
To plot the characteristics of an PNP transistor in common Collector mode

Background Theory:
In this configuration, the base terminal of the transistor serves as the input, the emitter
terminal is the output and the collector terminal is common for both input and output.
Therefore, it is named as common collector configuration. The input is applied between
the base and collector while the output is taken from the emitter and collector. The output
characteristics describe the relationship between output current or emitter current ( I E ) and
output voltage or emitter-collector voltage (V EC). A vertical line and a horizontal line is
drawn first. The vertical line represents y-axis and horizontal line represents x-axis.
The output current or emitter current ( I E ) is taken along y-axis (vertical line) and the
output voltage or emitter-collector voltage (V EC) is taken along x-axis (horizontal line).
To determine the output characteristics, the input current I B is kept constant at zero micro
amperes and the output voltage V EC is increased from zero volts to different voltage
levels. For each level of output voltage V EC the corresponding output current I E is noted.
A curve is then drawn between output current I E and output voltage V EC at constant input
current I B(0 μA).

Equipment Required:
TPS-3371/breadboard, n-p-n general purpose transistor, IN4001 diode, Two 200KΩ
resistor, 100KΩ resistor, ammeters, voltmeters, power supply unit with variable output

Diagram:

19
-12VDC Vvar -12V>>12VDC

D1
1N4001

VCE
R1 R2
Q1
400k 100k BC557

SW1

R3
V1
1k

GND

20
Circuit Diagram for Experiment 7

Procedure:
1. Connect the circuit as shown above
2. Connect the power supply as shown and adjust the variable supply to 0V.
3. Open switch SW1, this sets the base current I b at about 20µA.
4. Adjust the variable supply gradually such that V CE varies from 0 to -5V in steps of
V
-1V and record the value of I c = 1
1000
5. Close switch SW1, this sets the base current to 30µA and repeat step 4.

Results:
Table 9 PNP Common Collector Readings

I b = 20µA I b = 30µA
V CE (V) I E (mA) V CE (V) I E (mA)
1 1
2 2

3 3

4 4

5 5

Plot output characteristics I E against V EC

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 Experiment Number: 8

Title of Experiment:
Output characteristics of a NPN transistor in common Base mode

Objective:
To plot the characteristics of an NPN transistor in common Base mode

Background Theory:
In common base configuration, emitter is the input terminal, collector is the output
terminal and base terminal is connected as a common terminal for both input and output.
Therefore the emitter terminal and common base terminal are known as input terminals
whereas the collector terminal and common base terminal are known as output terminals.
In common base configuration, the base terminal is grounded so the common base
configuration is also known as grounded base configuration. Sometimes common base
configuration is referred to as common base amplifier, CB amplifier, or CB
configuration. The output characteristics describe the relationship between output current
(IC) and the output voltage (VCB).
A vertical line and a horizontal line is drawn first. The vertical line represents y-axis and
horizontal line represents x-axis. The output current or collector current (IC) is taken
along the y-axis (vertical line) and the output voltage (VCB) is taken along the x-axis
(horizontal line). To determine the output characteristics, the input current or emitter
current IE is kept constant at zero mA and the output voltage VCB is increased from zero
volts to different voltage levels. For each voltage level of the output voltage VCB, the
output current (IC) is recorded. A curve is then drawn between output current IC and
output voltage VCB at constant input current IE (0 mA).

Equipment Required:
TPS-3371/breadboard, n-p-n general purpose transistor, two 10KΩ resistor, One 1KΩ
resistor, One 1KΩ resistor, ammeters, voltmeters, +/-12V variable power supply

Diagram:

22
 -12VDC Vvar -12V>>12VDC

Q1
2N2222
R1 R3
10k 1k
SW1
R2
10k V1

VCB

GND

Circuit Diagram for Experiment 8

Procedure:
1. Connect the circuit as shown above
2. Connect the power supply as shown and adjust the variable supply to 0V.
3. Open switch SW1, this sets the emitter current I b at about -1.2mA.
4. Adjust the variable supply gradually such that V CB varies from -0.6 to 5V as
V
indicated in the table and record the value of I c = 1
1000
5. Close switch SW1, this sets the emitter current to about -2.4mA.
Results:
Table 10 NPN Common Base Readings
I E = −1.2 mA I E = −2.4 m A
V CB (V) I C (mA) V CB (V) I C (mA)
-0.63 -0.63
-0.50 -0.50
0 0
1 1
2 2
3 3
4 4
5 5

Plot output characteristics I C against V CB

23
 Experiment Number: 9

Title of Experiment:
Output characteristics of a PNP transistor in common Base mode

Objective:
To plot the characteristics of an PNP transistor in common Base mode

Background Theory:
In common base configuration, emitter is the input terminal, collector is the output
terminal and base terminal is connected as a common terminal for both input and output.
Therefore the emitter terminal and common base terminal are known as input terminals
whereas the collector terminal and common base terminal are known as output terminals.
In common base configuration, the base terminal is grounded so the common base
configuration is also known as grounded base configuration. Sometimes common base
configuration is referred to as common base amplifier, CB amplifier, or CB
configuration. The output characteristics describe the relationship between output current
(IC) and the output voltage (VCB).
A vertical line and a horizontal line is drawn first. The vertical line represents y-axis and
horizontal line represents x-axis. The output current or collector current (IC) is taken
along the y-axis (vertical line) and the output voltage (VCB) is taken along the x-axis
(horizontal line). To determine the output characteristics, the input current or emitter
current IE is kept constant at zero mA and the output voltage VCB is increased from zero
volts to different voltage levels. For each voltage level of the output voltage VCB, the
output current (IC) is recorded. A curve is then drawn between output current IC and
output voltage VCB at constant input current IE (0 mA).

Equipment Required:
TPS-3371/breadboard, n-p-n general purpose transistor, two 10KΩ resistor, one 1KΩ
resistor, ammeters, voltmeters, +/-12V variable Power supply

Diagram:

24
+12VDC Vvar +12V>> -12VDC

Q1
BC557
R1 R3
10k 1k
SW1
R2
V1
10k

VCB

GND
Circuit Diagram for Experiment 9

Procedure:
1. Connect the circuit as shown above
2. Connect the power supply as shown and adjust the variable supply to 0V.
3. Open switch SW1, this sets the emitter current I b at about 1.2mA.
4. Adjust the variable supply gradually such that V CB varies from -0.7 to 5V as
V
indicated in the table and record the value of I c = 1
1000
5. Close switch SW1, this sets the emitter current to about 2.4mA.
Results:
Table 11 PNP Common Base Readings
I E = 1.2 mA I E = 2.4 m A
V CB (V) I C (mA) V CB (V) I C (mA)
0.63 0.7
0.50 0.5
0 0
-1 -1
-2 -2
-3 -3
-4 -4
-5 -5

25
Plot output characteristics I C against V CB

Experiment Number: 10

Title of Experiment:
Voltage/Current Characteristics of a Thyristor

Objective:
To plot the characteristics of a Thyristor using oscilloscope X/Y mode

Background Theory:
A Thyristor is a four layer semiconductor device of PNPN structure with three PN
junctions. It has three terminal anode, cathode and gate. When the anode voltage is made
positive with respect to cathode, two junctions are forward biased. The third junctions is
reversed biased and, only a small leakage current flows from anode to cathode. The
Thyristor is then said to be in the OFF mode. If a Anode to Cathode voltage is increased
to a sufficiently large value, the reversed biased junction will break. This is known as
avalanche breakdown and the corresponding voltage is called forward breakdown voltage
VBO. Since junctions to junctions are already forward biased, there will be free
movement of carriers across all three junctions, resulting in a large forward anode
current. The device will then be in a conducting state or on state. The voltage drop would
be due to the ohmic drop in the four layers and it is small, typically, 1V. In the on state,
the anode current is limited by an external impedance or resistance.

Equipment Required:
TPS-3321/breadboard, Electronic Device Characteristics Module, Thyristor MCR100-6,
5.1KΩ, 1KΩ, 100Ω, 6Vac supply

Diagram:

AC1
CH2
1k B

6V AC Sine Input U1
CR02AM
5.1k
A
CH1

100

AC2

Circuit Diagram for Experiment 10

26
Procedure:
1. Connect the circuit as shown above
2. Connect CH1 of the scope to point B and observe the horizontal line displayed on
the oscilloscope screen, this shows the voltage VAK across the Thyristor,
Disconnect CH1 from B.
3. Connect CH2 to point A and observe the vertical line displayed on the
oscilloscope screen this shows the current IAK through the Thyristor.
4. Connect CH1 to point B and CH2 to A and view the characteristics of the
Thyristor as displayed on the oscilloscope screen.

Results:
Sketch the characteristics has displayed on the Oscilloscope screen.

27