- CHAPTER 14

Semiconductor

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Electronics

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Chapter Analysis w.r.t, Last 3 Year's Board Exams
The analysis given here gives you an analytical picture of this chapter and will helpyou to
identify the concepts of the chapter that are to befocussed more from exam point of view.
IT
Number of Questions asked in last 3 years
2015 2016 2017
Delhi All India Delhi All India Delhi All India
-
H
Very Short Answer (I mark)
f--
Short Type I Answer (2 marks) IQ
Short Type II Answer (3 marks) 2 Qs IQ IQ 2 Qs 2 Qs
Long Answer (5 marks)
Value Based Questions (4 marks)
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---
• In 2015, In Delhi set, two question of 3 marks each based on Fabrication and
CE-Transistors were asked. In All India set, one question of 2 marks based on Intrinsic
and Extrinsic Semiconductors and one questions of 3 marks based on Logic Gates
were asked.
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• In 2016, only one question of3 marks based on p-n hmction Diode in All India set.
• In 2017, in Delhi set, 2 question of 3 marks each based on p -n Junction and other is
numerical question based CE-Transistor were asked. In All India set, two question of
3 marks based on Forward and Reverse Biased, Solar Cell and Circuit based
numerical were asked.
On the basis of above analysis, it can be said that from exam point of view Fabrication,
Intrinsic and Extrinsic Semiconductors, Logic Gates, p-n Junction and Solar C-ellare most
important concepts of the chapter.
[TOPIC 1] Semiconductor, Diode and Its
Applications

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1.1Classification of Metals, Semiconductors and Insulators
On the basis of the relative value of electrical conductivity (cr)or resistivity (p = ~ J the solids are broadly
classify as

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· Metals They possess very low resistivity or high conductivity.
p _1O-2_1O-8Qm, cr-102_108Sm-1
. Semiconductors They have resistivity or conductivity intermediate to metals and insulators.
p_1O-5_1O-6Qm, cr-1O-5to 100Sm-1
· Insulators They have high resistivity or low conductivity.
p _1011_1019Qm, o _10-11_10-19 Sm-1
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Types of Semiconductors on the basis of their chemical composition are given below
(i) Elemental Semiconductors These semiconductors are available in natural form, e.g. silicon
and germanium.
(ii) Compound Semiconductors These semiconductors are made by compounding the metals,
e.g. CdS, GaAs, CdSe, Inp, anthracene, polyaniline, ete.
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1.2 Energy Band
In a crystal due to interatomic interaction, valence electrons of one atom are shared by more than one
atom. Now, splitting of energy level takes place. The collection of these closely spaced energy levels are
called an energy band.
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· Valence Band Valence band is the highest energy band which includes the energy levels of the
valence electrons.
· Conduction Band Conduction band is the energy band above the valence band. The lowest unfilled
allowed energy band next to valence band is called conduction band.
~B~:'
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· Energy Band Gap The minimum energy required for shifting electrons from
valence band to conduction band is called energy band gap (E 9)' !lEg

· Forbidden Energy Gap (LVJ 9) Energy gap between conduction band and valence VB max.
band, LVJ 9 = (CB)min- (VB)max min.

· Fermi Energy The highest energy level in the conduction band filled up with electrons at absolute
zero is called Fermi level and the energy corresponding to the Fermi level is called Fermi Energy. It
is the maximum possible energy possessed by free electrons of a material at absolute zero temperature
(i.e. 0 K).
CHAPTER 14 : Semiconductor Electronics 425

Differences between conductor, insulator and semiconductor

on the basis of energy bands
Conductor (Metal) Insulator
In conductor, either there is no In insulator, the valence band
energy gap between the is completely filled, the
conduction band which is partially conduction band is completely
filled with electrons and valence empty and energy gap is quite
Semiconductor
In semiconductor also, like insulators
the valence band is totally filled and the
conduction band is empty but the
energy gap between conduction band

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band or the conduction band and large that small energy from
valence band overlap each other. any other source cannot
overcome it.
Thus, many electrons from below Thus, electrons are bound to
the fermi level can shift to higher valence band and are not free
and valence band, unlike insulators is
very small.
Thus, at room temperature, some
electrons in the valence band acquire

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energy levels above the fermi level to move and hence, electric thermal energy greater than energy
in the conduction band and conduction is not possible in band gap and jump over to the
behave as free electrons by this type of material. conduction band where they are free
acquiring a little more energy to move under the influence of even a
from any other sources. small electric field and acquire small
conductivity.
Empty conduction band
Conduction Conduction
Electron
energyEc···················
,( band b~d !
JiJiiiffi{UjiiJJii d e>
Ev
IT >-EC~

Valence
band
!e lEg >3 eV
~ Ev Valence
For metals
UJ band

1.3 Semiconductors
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Semiconductors are the materials whose conductivity lies between metals and insulators. They are
characterised by narrow energy gap (- 1eV) between the valence band and conduction band.

Classification of Semiconductor on the Basis of Purity

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Intrinsic Semiconductors
It is a pure semiconductor without any significant dopant species present.
ne = nh = ni
where, ne and nh are number densities of electrons and holes respectively and ni is called intrinsic carrier
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concentration. An intrinsic semiconductor is also called an undoped semiconductor or i-type

semiconductor.
The total current I is the sum of the electron current I, and hole current Ih.
I=Ie+Ih·
where, L, = electron current, Ih = hole current

Extrinsic Semiconductors
Pure semiconductor when doped with the impurity, it is known as extrinsic semiconductor.
 426 o Chopterwise CBSE Solved Popers PHYSICS

Extrinsic semiconductors are basically of two types: • Formation of p-type semiconductor is shown below:
n-type Semiconductor
In this type of extrinsic semiconductor :~:::8:~:::::~e~:::::~:8~::::::::
:. .:
~.... ~.... i ~

'..
majority charge carriers are electrons and .... .. .,..
..
minority charge carriers are holes, i.e. ne > nh' ..
.. .... ..
Here, we dope Si or Ge with a pentavalent · ·8· ··@· ··8·..•..···
element, such as As, P or Sb of group V, then ....• ( ~.......•. r ·k·~:-·<~!t~ .

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four of its electrons bond with the four .. .. i>CI, • .
silicon neighbours, while fifth remains very
weakly bound to its parent atom. ::::~e:~:::::~e:~:~~~:(3::::~::::
~....
...
:. ~.
Formation of n-type semiconductor is shown .... .
"
..
"
" :

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below:
Trivalent acceptor atom (In. AI. 8. etc) doped in
.:
...···0····
~.
..···0···....··0· ..·..····
:, tetravalent Si or Ge lattice giving p -type semiconductor

··
...•
V·.......•.
V·.......•
·V· ·· Acceptor energy level lies just above the valence band
i ". ~ ': ~ ....

•.e...
··
..···8··..··..··· Conduction band
······8·..·····
. • \ ~~e-unbondedfree

....... :+: .•........ :+5•........•• +~..•.........

electron donated
by pentavalent Eg= 1 evl~:::~~~~~7~~'~-::'
A t I I 1.
i) : \ i) (+5 valency) atom T e, = 0.01 eV
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~i ~i ....
~ Valence band

:::::~e:~:::::~e:~::::~:e::::~:::::
i ~ ~'. ~\ p-type
.
.. .,
.
.. .
• At equilibrium condition, nenh = n;
Pe;:tavalent danor atam (As. sb, P. etc.) daped for
• Minimum energy required to create a hole-electron
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tetravalent Si or Ge giving n-type semiconductor
pair, hv e E 9
Donor energy level lies just below the
where, Egis energy band gap.
conduction band
. h hc
1.e.Eg= vrrtin =--
Conduction band Amax
- 1.
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Eg= 1 evL~~~~;·I:v·:s ...• · T Ed= 0.01 eV

• Electric current, I = eA (neve + nhvh)
where, A is area of cross-section and
Valence band
ve and vh are speed of electron and hole respectively.
Mobility of charge carriers.u = 2:. , where E is applied
n-type E
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electric field.
p-type Semiconductor Hence, ve = !leE and vh = !lhE
• In this semiconductor, majority charge Electrical conductivity, o = .!. = e (Jlene + nhllh)
carriers are holes and minority charge p
carriers are electrons i.e. nh > ne' where, ne and nh are concentration of electron and
• In a p-type semiconductor, doping is done hole respectively and u, and u , are mobilities of
with trivalent impurity atoms. i.e. Those electron and hole, respectively, applying the formula
V Ex! EA
atoms which have three valence electrons
in their valence shell.
1= R = p! = P
= !(neve + nhvh)
A
CHAPTER 14 : Semiconductor Electronics 427

1.4 p-n Junction I-V (Current-Voltage) Characteristic

A p-n junction is an arrangement made by a close
contact of n-type semiconductor and p-type
semiconductor.
Formatian of Depletion Region in p-n
.Junction
of p-n Junction Diode
Forward Biased Characteristic
• Junction diode is said to be forward bias when
the positive terminal of the external battery is
connected to the p -side and negative terminal to

During formation of p-n junction, due to the
concentration gradient across p and n-sides, holes
diffuse from p-side to n-side(p ~ n) and electrons
diffuse from n-side to p-side (n ~ pl.
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the n-side of the diode.
Similarly, if the positive terminal of a battery is
connected to n-side and negative terminal to the
p-side, then the p-n junction is said to be reverse
biased. The circuit diagram and I-V

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This space charge region on either side of the characteristics of a forward biased diode is
junction topr .•ier is known as depletion region. shown below:
Electrondiffusion
ElectrondrIift --
eeEllEll~~:?%~ 8

"ill I:
'~~;'~7.
.M<'II1 ~~:: v/. .

0< oc

n:
1\6{ XI
eeEllEll
00 eeEllEll ~
t"--'-::-,--=-~'-'"
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Holediffusiorl-
-Hole drift ~ 3
Li:2
Depletion region is the small region in the
vicinity of the junction which is depleted of free ~ 1
Battery
charge carriers. Width of depletion region is of the o 0.1 0.2 0.3 0.4 0.5
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order oflO-6m. The potential difference develo; j (a) Forw~sM
across the depletion region is called the poterr' I (b)
barrier.
Forward bias
Semiconductor Diodel
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p-n Junction Diode

• A semiconductor diode is basically a p-n
junction with metallic contacts provided at the
ends for the application of an external voltage.
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(i) In forward biasing width of depletion layer

• A p-n junction diode is represented
~
Anode Cathode .
• The direction of arrow indicates the
conventional direction of current (when the
diode is under forward bias).
• The graphical relations between voltage applied
across p-n junction and current flowing through
the junction are called I-V.
as
decreases.
(ii) In forward biasing resistance offered
RForward '" Ion -25n
Reverse Biased Characteristic
In reverse biased, the applied voltage supports the
flow of minority charge carriers across the
junction. So, very small current flows across the
junction due to minority charge carriers.
428 o Chapterwise CBSE Solved Papers PHYSICS

Transformer
The circuit diagram and 1- V characteristics of a p-n
+
reverse biased diode is shown below.
51 :A
--- Reverse bias M
p n -10 -8 -6 -4 -2 0 ::;
c.
--~~~~~~O~ ~ ::;
.s o

~l
2
1
Breakdown 4
6 13 ·8

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voltage 8 3l " .. ----_._.
10~ Circuit diagram for Diode as a half-wove rectifier
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a: The input and output waveforms have been
Battery given below:
'------I ~~f--:-+_.......J (a)

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InputAC
(a) (b)

..J

a:
(/)
(/)

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<ll

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(i) In reverse biasing width of depletion layer
g
increases. (b)
(ii) In reverse biasing resistance offered Input and output waveforms
5
RReverse "" 10 0

(iii) Reverse bias supports the potential barrier
and no current flows across the junction
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due to the diffusion of the majority carriers.
• The DC resistance of a junction diode, rDC =
• The dynamic resistance or AC-resistance of
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Diode as a Full-Wave Rectifier
In the full-wave rectifier, two p-n junction diodes,
Dj and D2 are used. Its working is based on the
principle that junction diode offer very low
~
I resistance in forward bias and very high resistance
in reverse bias .
Transformer

. . di10d e, rAC = -LlV

junction
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1.5 Diode as a Rectifier

The process of converting alternating
voltage/current into direct voltage/current is
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called rectification. Diode is used as a rectifier

for converting alternating current/Voltage into
direct current/voltage. There are two ways of 01
, • -.-: •• --r:.,...-. -:-.• ---j .;.t------,
using a diode as a rectifier i.e. :P1 51:

Diode as a Half-Wave Rectifier

Diode conducts corresponding to positive half
cycle and does not conduct during negative half
cycle. Hence, AC is converted by diode into
unidirectional pulsating DC. This action is known
as half-wave rectification. Circuit diagram of full-wove rectifier
CHAPTER 14 : Semiconductor Electronics 429

The input and output waveforms have Its symbol is

been given below: ~hv
<:(
Cil ~
E
.2
~

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co
Cil
E

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Due tolDue
I
to I Due tOiDue
I
to I
01 : O2 : 01 : 02 :
:
I
:
I
:
I
I: I p
I I I I
I I I I

Metaliised
contact
A forward biased LED
V-I characteristics of LED are shown below:
• The average value or DC value obtained from a
IT J(mA)
half-wave rectifier, Silicon
30
10
IDC =-
1t
20
• The average value or DC value obtained from a 15
full-wave rectifier,
10
H
21
IDC=- 0 -10V
1t --+-----t--"""'-'--.......-...,..,...- V (volt)

• The pulse ~uency of a half-wave rectifier is

equal to frequency of AC.
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• The pulse frequency of a full-wave rectifier is LEDs has the following advantages over
double to that of AC. conventional incandescent low power lamps.
(a) Fast action and no warm up time required
1.6 Optoelectronic (b) It is nearly monochromatic
Junction Devices (c) Low operational voltage and less power
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Semiconductor diodes in which carriers are consumed, long life, ruggedness

generated by photons. i.e. photo-excitation, such
devices are known as optoelectronic devices.
These are as follows:
Light Emitting Diode (LED)
It is a heavily doped forward biased p-n junction
diode which spontaneously converts electrical
energy into light energy, like infrared and visible
light.
(d) Fast ON-OFF switching capability in
nanoseconds.
Photodiode
A photo diode is a special type of junction diode
used for detecting optical signals. It is a reverse
biased p-n junction made from a photosensitive
material. Such a way that light can fall on its
junction.
430 o Chopterwise CBSE Solved Papers PHYSICS

The materials used for solar cell are Si and GaAs.

Zener Diode
Zener diode is a reverse biased heavily doped p-n
junction diode. It is operated in breakdown
region.
V-I characteristics of photodiode are shown
-cf--

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below: Its symbol is
J(mA)
V-I characteristics of Zener diode are shown
below:
Reverse bias J(mA)
v

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Reverse bias Forward bias
[(mAl Vz
We observe from the figure that current in -v
photodiode changes with the change in
light intensity (I), when reverse bias is
applied. In light operated switches.
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/ (JJ.A)
Solar Cell
Solar cell is a p-n junction diode which converts . Zener Diode as a Voltage Regulator When
solar energy into electrical energy. It is based on the applied reverse voltage (V) reaches the
the photovoltaic effect. Its symbol is breakdown voltage (V,) of the Zener diode there
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is a large change in the current. So, after the

~~
,.. breakdown voltage V" a large change in the
current can be produced by almost insignificant
change in the reverse bias voltage i.e. Zener
voltage remains constant even though the
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current through the Zener diode varies over a

wide range. The circuital arrangement is shown
here .
• This breakdown in a diode due to the band to
band tunneling is called Zener breakdown.
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p
Photo current through an illuminated p-n junction
Unregulated
V-I characteristics of solar cell are shown below: voltage
/
Load Regulated

---+--_--V
-,
Open circuit voltage(Voc)
RL voltage, Vz

Circuit diagram af Zener diode as voltage regulator

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 7. Figure shows the I- V characteristics of a
given device. Name the device and write
PREVIOUS YEARS' where it is used.
/(mA)

EXAMINATION QUESTIONS Reverse bias

Forward bias
TOPIC 1 Vz
V(volt)

o 1 Mark Questions

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/(mA)
1. The graph shown in the figure represents a Oelhl2009
plot of current versus voltage for a given
semiconductor. Identify the region, if any
over which the semiconductor has a
o 2 Marks Questions

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negative resistance. All India 2013 8. The V-I characteristic of a silicon diode is
as shown in the figure. Calculate the
B resistance of the diode at (i) I = 15 mA
and (ii) V = -10V
(1 mAl
30

20 -------- Silicon r-:

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Voltage01) \--
15
2. What is the difference between an n-type
10
and a p- type extrinsic semiconductor?
-10V o
Oelhl2012C
0.70.8 V
3. What happens to the width of depletion
H
layer of a p- n junction when it is
Foreign 2015
(i) forward biased?
(ii) reverse biased? All India 2011 9. Distinguish between 'intrinsic' and
'extrinsic' semiconductors? All India 2015
4. Why cannot we take one slab of frtype
semiconductor and physically join it to 10. Explain, with the help of a circuit
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another slab of n-type semiconductor to get diagram, the working of a p-n. junction
p-n junction? All India 2010C diode as a half-wave rectifier. All India 2014
01
11. Draw energy band diagram of n-type and
p-type semiconductor at temperature
-2V~ T> OK.Mark the donar and acceptor
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energy level with their energies. Foreign 2014

5. What is the most common use of
photo diode? All India 2009
6. State the relation between the frequency v
of radiation emitted by LED and the band
gap energy E of the semiconductor used to
fabricate it. All India 2009C
12. Distinguish between a metal and an
insulator on the basis of energy band
diagram. Foreign 2014
13. Explain, with the help of a circuit
diagram, the working of a photodiode.
Write briefly how it is used to detect the
optical signals. Oelhl 2013
432 o Chapterwise CBSE Solved Papers PHYSICS

14. Assuming that the two diodes Dl and D2 23. Explain, how a depletion region is formed
used in the electric circuit shown in the in a junction diode? Delhi 2011

figure are ideal, find out the value of the 24. Draw the circuit diagram showing how a
current flowing through 1 n resistor. p-n junction diode is
01
•... 2Q (i) forward biased (ii) reverse biased
v
How is the width of depletion layer
2Q affected in the two cases? All Indio 2011C

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1Q
25. Carbon and silicon both have four valence
electrons each, then how are they
6V Delhi 2013C distinguished? Delhi 2DllC
15. Mention the important considerations 26. Name the device, D which is used as a
voltage regulator in the given circuit and

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required while fabricating a p-ri junction
diode to be used as a Light Emitting give its symbol.
Diode (LED). What should be the order of
, band gap of an LED, if it is required to +
emit light in the visible range? Delhi 2013
16. Write two characteristics features
I
Fluet uating
R 12

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1
Const ant
to distinguish between n-type and p-type vol tage volta ge

semiconductors. All Indio 2012

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17. Give two advantages of LED's over the 1 1
conventional incandescent lamps.
Foreign 2012 Delhi 2011C

18. The current in the forward bias is known
to be more (- mA) than the current in the
H
reverse bias (- J.lA). What is the reason, to
operate the photodiode in reverse bias?
Delhi 2D12
19. How does a light emitting diode (LED)
work? Give two advantages of LED's over
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27. Draw the circuit diagram of an
illuminated photodiode in reverse bias.
How is photodiode used to measure light
intensity? Delhi 201D
28. Write the main use of the
(i) photodiode
(ii) Zener diode. All Indio 2010C

the conventional incandescent lamps.

20.
Foreign 2D12

(i) Why are Si and GaAs preferred

o 3 Marks Questions
materials for fabrication in solar 29. (i) In the following diagram, which bulb
cells? out of ~ and ~ will glow and why?
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01 O2
(ii) Draw V-I characteristic of solar cell
and mention its significance.
All Indio 2012C ~
21. Name the semiconductor device that can
be used to regulate an unregulated DC
power supply. With the help of I-V
tJrB 2

characteristics of this device, explain its (ii) Draw a diagram of an illuminated

p-ri junction solar cell.
working principle. Delhi 2011
(iii) Explain briefly the three processes
22. How is forward biasing different from due to which generation of emf takes
reverse biasing in a p- n junction diode? place in a solar cell. All Indio 2017
Delhi 2D11
CHAPTER 14 : Semiconductor Electronics
30. (i) In the following diagram, is the
junction diode forward biased or
reverse biased?
~v
(ii) Draw the circuit diagram of a full
wave rectifier and state how it
works? All Indio 2017
31. Write the two processes that take place in
the formation of a p-n. junction. Explain
with the help of a diagram, the formation
of depletion region and barrier potential
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in a p-ri junction. Delhi 2017
32. A Zener diode is fabricated by heavily
doping both p- and n- sides of the
junction. Explain, why?
Briefl~plain the use of Zener diode as a
DC voltage regulator with the help of a
circuit diagram. Delhi 2017
IT
33. (i) Explain with the help of a diagram
the formation of depletion region and
barrier potential in a p - n junction.
(ii) Draw the circuit diagram of a
half-wave rectifier and explain its
working. All Indio 2016
H
34. (i) Describe the working principle of a
solar cell. Mention three basic
processes involved in the generation
of emf.
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(ii) Why are Si and GaAs preferred
materials for solar cells? Foreign 2016
35. With what considerations in view, a
photodiode is fabricated? State its
working with the help of a suitable
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diagram.
Even though the current in the forward
bias is known to be more than in the
reverse bias, yet the photo diode works in
reverse bias. What is the reason? Deihl 2015
36. (i) Distinguish between n-type and
p- type semiconductors on the basis
of energy band diagrams.
(ii) Compare their conductivities at
absolute zero temperature and at
room temperature. Delhi 2015C
433
37. Draw the energy band diagrams of
(i) n -type and
(ii) p-type semiconductor at
temperature, T> OK.
In the case n-type Si semiconductor, the
donor energy level is slightly below the
bottom of conduction band whereas in
p-type semiconductor, the acceptor energy
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level is slightly above the top of the
valence band. Explain, what role do these
energy levels play in conduction and
valence bands. All Indio 2015C
38. Write any two distinguishing features
between conductors, semiconductors and
insulators on the basis of energy band
diagrams. All Indio 2014
39. (i) How is a photo diode fabricated?
(ii) Briefly explain its working. Draw its
V-I characteristics for two different
intensities of illumination. Foreign 2014
40. Draw the circuit diagram of a full-wave
rectifier using p-ti junction diode. Explain
its working and show the output input
waveforms. Delhi 2012
41. Draw V-I characteristics of a p-ri junction
diode. Answer the following questions,
giving reasons.
(i) Why is the current under reverse
bias almost independent of the
applied potential upto a critical
voltage?
(ii) Why does the reverse current show a
sudden increase at the critical
voltage?
Name any semiconductor device which
operates under the reverse bias in the
breakdown region. All Indio 2012
42. Draw a labelled diagram of a full-wave
rectifier circuit. State .
Its working principle. Show the
input-output waveforms. All Indio 2011
43. Name the important processes that occurs
during the formation of a p- n junction.
Explain briefly, with the help of a suitable
diagram, how a p- n junction is formed.
Define the term 'barrier potential'?
Foreign 2011
434
44. (i) Why is a photo diode operated in
reverse bias mode?
(ii) For what purpose is a photo diode
used?
(iii) Draw its I-V characteristics
for different intensities of
illumination. HOTS; All India 2011C
45. (i) Why are Si and GaAs preferred
R
materials for solar cells?
(ii) Describe briefly with the help of a
necessary circuit diagram, the
working principle of a solar cell.
All India 2011C
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46. (i) Describe the working of Light
Emitting Diodes (LEDs).
(ii) Which semiconductors are preferred
to make LEDs and why?
(iii) Give two advantages of using LEDs
over conventional incandescent low
power lamps. All India 2011
IT
47. An AC signal is fed into two circuits 'X' and
'Y' and the corresponding output in the two
cases have the waveforms as shown.
(i) Identify the circuits 'X and 'Y'. Draw
their labelled circuit diagrams.
(ii) Briefly explain the working of
H
circuit Y.
(iii) How does the output waveform from
circuit Y get modified when a capacitor
is connected across the output
terminals parallel to the load resistor?
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~~ @-o, 0,
~[}-~
All India 2009
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48. With the help of a suitable diagram, explain
the formation of depletion region in a p-ti
junction. How does its width change when
the junction is
(i) forward biased and
(ii) reverse biased? All India 2009
49. (i) With the help of circuit diagrams,
distinguish between forward biasing
and reverse biasing of p-ti junction
diode.
o Chapterwise CBSE Solved Papers PHYSICS
(ii) Draw V-I characteristics of a
p-n junction diode in
(a) forward bias. (b) reverse bias.
All India 2009
50. Explain with the help of a circuit diagram
how a Zener diode works as a DC voltage
regulator? Draw its V-I characteristics.
All India 2009
51. How is a Zener diode fabricated so as to
make it a special purpose semiconductor
diode? Draw the circuit diagram of a
Zener diode as a voltage regulator and
explain its working. All India 2009C
o 5 Marks Questions
52. (i) State briefly the processes involved
in the formation of p-ri junction,
explaining clearly how the depletion
region is formed.
(ii) Using the necessary circuit
diagrams, show how the V-I
characteristics of a p-ri junction are
obtained in (a) forward biasing
(b) reverse biasing
How are these characteristics made use of
in rectification? Delhi 2014
53. (i) Draw the circuit arrangement for
studying the V-I characteristics of a
p-n junction diode in (a) forward and
(b) reverse bias. Briefly explain how
the typical V-I characteristics of a
diode are obtained and draw these
characteristics.
(ii) With the help of necessary circuit
diagram, explain the working of a
photodiode used for detecting optical
signals. All India 2014C
54. (i) Explain with the help of diagram,
how a depletion layer and barrier
potential are formed in a junction
diode.
(ii) Draw a circuit diagram of a
full-wave rectifier. Explain its
working and draw input and output
waveforms.
Delhi 2014C
CHAPTER 14 : Semiconductor Electronics
55. (i) How is a depletion region formed in
p-n junction?
(ii) With the help of a labelled circuit
diagram. Explain how a junction
diode is used as a full-wave rectifier.
Draw its input, output waveforms.
(iii) How do you obtain steady DC output
from the pulsating voltage? Delhi 2D13C
R
56. Why is a Zener diode considered as a
special purpose semiconductor diode?
Draw the I-V characteristics of Zener
diode and explain briefly, how reverse
SI
current suddenly increase at the
breakdown voltage?
Describe briefly with the help of a circuit
diagram, how a Zener diode works to
obtain a constant DC voltage from the
unregulated DC output of a rectifier.
Delhi 2009C; Foreign 2012
57. (i) Describe briefly, with the help of a
IT
diagram, the role of the two
important processes involved in the
formation of a p-ri junction.
(ii) Name the device which is used as a
voltage regulator. Draw the
necessary circuit diagram and
H
explain its working. HOTS; All Indio 2012
58. (i) Draw the circuit diagram of a p-n
junction diode in
(a) forward bias.
O
(b) reverse bias.
How are these circuits used to study
the V-I characteristics of a silicon
diode? Draw the typical V-I
characteristics.
M
(ii) What is a Light Emitting Diode
(LED)? Mention two important
advantages of LEDs over
conventional lamps.
Delhi 2010C; All Indio 2010
59. (i) Draw I-V characteristics of a Zener
diode.
(ii) Explain with the help of a circuit
diagram, the use of a Zener diode as
a voltage regulator.
435
(iii) A photodiode is operated under
reverse bias although in the forward
bias, the current is known to be more
than the current in the reverse bias.
Explain, giving reason. HOTS; Foreign 2010
60. (i) Draw a circuit arrangement for
studying V-I characteristics of a p-n
junction diode in
(a) forward bias and
(b) reverse bias.
Show typical V-I characteristics of a
silicon diode.
(ii) State the main practical application
of LED. Explain, giving reason, why
the semiconductor used for fabrication
of visible light LEDs must have a
band gap of at least (nearly) 1.8 eV.
Delhi 2010C
61. (i) How is a Zener diode fabricated so as
to make it a special purpose diode?
Draw I-V characteristics of Zener
diode and explain the significance of
breakdown voltage.
(ii) Explain briefly, with the help of a
circuit diagram, how a p-n junction
diode works as a half-wave rectifier.
Delhi 2009C
62. (i) Draw the typical shape of the V-I
characteristics of a p-ti junction diode
both in (a) forward (b) reverse bias
J r L 'r:
configuration. How do we infer, from
these characteristics that a diode can
be used to rectify alternating
voltages?
(ii) Draw the circuit diagram of a
full-wave rectifier using a centre-tap
transformer and two p-ti junction
diodes. Give a brief description of the
working of this circuit. Delhi 2009C
o Explanations
1. Resistance of a material can be found out by the
slope of the curve V versus I. Part Be of the curve
shows the negative resistance as with the increase
in current and uecrease in voltage. (1)
436 [21 Chapterwise CBSE Solved Papers PHYSICS

2. n-type p-type 9. Intrinsic Extrinsic

Semiconductor Semiconductor semiconductor semiconductor

(i) It is formed by It is formed by 1. It is a pure It is prepared by doping

doping doping trivalent semiconductor a small quantity of
pentavalent impurities. material with no impurity atoms to the
impurities. (112) impurity atoms pure semiconductor.
in it.
(ii) The electrons are The holes are

R
majority carriers majority carriers 2. The number of The number of free
and holes are and electrons are free electrons in electrons and holes is
minority carriers. minority carriers the conduction never equal. There is an
(n,»nh) (nh> >n,) band and the excess of electrons in
(112) number of holes n- type n, > nj
in valence band is semiconductors and

SI
3. (i) Width of depletion layer decreases in exactly equal. excess of holes in p-type
forward bias. n, = nh = nj nh > nj semiconductors.
(ii) Width of depletion layer increases in reverse (2)
bias. (1)
10. p-n Junction Diode as a Half-Wave Rectifier AC
4. In this way;-c6ntinuous contact cannot be voltage to be rectified is connected to the primary
produced at atomic level and junction will coil of a step-down transformer. Secondary coil is
behave as a discontinuity for the flowing charge connected to the diode through resistors Ru across
carrier. (1) which output is obtained.
IT Transformer
5. The photodiode can be used as a photodetector A x
to detect optical signals. In light operated
switches. (1)

6. In LED, energy of the photon should be equal

to or less than the band gap energy i.e.
hv s; Es
H
where, E s = band gap energy, B Y
v = frequency of emitted photon. (1)
Working During positive half cycle of the input
7. Zener diode, which is used as a DC voltage AC, the p-n junction is forward biased. Thus, the
regulator. (1) resistance in p-n junction becomes low and current
flows. Hence, we get output in the load. During
8. (i) From the given curve, we have
O

negative half cycle of the input AC, the p-n junction

voltage, V = 0.8 volt for current, is reverse biased. Thus, the resistance of p-n junction
I = 20 mA for voltage, is high and current does not flow. Hence, no output
V = 0.7 volt for current,
in the load. So, for complete cycle of AC, current
flows through the load resistance in the same
I=10mA direction. (2)
= (20-10) mA = 10 x 10-3A
M

=> LV (1) (a)

=> ~V= (0.8-0.7) =0.1 V InputAC
I

. ~V I
I
:. Resistance, R=- I

LV I

=> R = 0.1
10 x 10 3

=> R=10n
(ii) For V = -10V, we have
1= -1 J.LA= -1 Xl0-6A
(b) t
=> R=_1_0_=1.OXI07n Input and output waveforms
1X10-6 (1)
CHAPTER 14 : Semiconductor Electronics 437

11. The required energy band diagram is shown 13. Working of photodiode A junction diode made
below: (1)
I Conduction band I from light sensitive semiconductor is called a
photodiode. A photo diode is a p-n junction diode
Acceptor energy level arranged in reverse biasing.
~ hv
10
.04 eV
I
V~I~D9.~ba.Dd
."",,.':,., ',.:':.'..:'1.,,',

(a) p-type

R
I Conduction band 1

10.045 eV
••_.'\ ...••........•
0-- •• _.-..

Donor energy level R (1)

IHV~I~r,9~6~g81

SI
The number of charge carriers increases when
light of suitable frequency is made to fall on the
(b) n-type (1)
p-n junction, because new electron holes pairs are
12. (i) Metal For metals, the valence band is created by absorbing the photons of suitable
completely filled and the conduction band can frequency. Intensity of light controls the number
have two possibilities either it is partially filled of charge carriers. Due to this property
with an extremely small energy gap between photodiodes are used to detect optical signals. (1)
the valence and conduction bands or it is
14. According to the question
empty, with two bands overlapping each other
as shown below: zn
IT 01
A B
Partiallyfilled { Conduction band
conduction
band O2 2n
0 C
Filled valence band{I.;X~f~~~~:~~~P~~~
Overlapping ~ . + - 1 n
H
conduction band Conduction band E F
6V
Filledvalence band~ .;!yaW6.1.f§~ri§;.
RAB = 2+1;= 3n
On applying small even electric field, metals 1 1 1
-=-+-
can conduct electricity. (1) R' 2 3
O

(ii) Insulators For insulator, the energy gap = 3+2=2n-1;

between the conduction and valence bands are 6 6
very large, also the conduction band is
R'=~n
practically empty, as shown below:
S
V 6
IEF =-=-= SA
M

R 6/ S (2)

15. For LEDs, the threshold voltages are much higher

When an electric field is applied across such a
solid, the electrons find it difficult to acquire.
So, a large amount of energy is required to
reach the conduction band. Thus, the
conduction band continues to be empty. That
is why no current flows through insulators. (1)
and slightly different for different colours. The
reverse breakdown voltages of LEDs are low
generally around 5V. It is due to this reason, the
care is taken that high reverse voltages do not
appear across LEDs. There is very little resistance
to limit the current in LED. Therefore, a resistor
must be used in series with the LED to avoid any
damage to it. (1)
438 o Chapterwise eSSE Solved Papers PHYSICS

u
~ Q5
.Q
3: c
o Ql Ql :.c 2 17. When we apply sufficient voltage to LED, electron
~ u
Ql E = Ql ::::l
move across the junction into p-region and get
~ a: <{ ~ 000 ~
attracted to the holes there holes are sent from
50 p region to n region (where they are minority
<{ carriers). Thus, electrons and holes recombine .
.§.
-
C
40 During each recombination, the electric potential
energy is converted into the electromagnetic
~ energy and a photon of light with a characteristic
o 30
::::l
frequency is emitted, this is how, LED works.

R
12
<Il
~ 20
Li9h~
0
u, p
10
RL
n

SI
0 2 3 4 5 V
The semiconductor used for fabrication of visible
[1)
LEDs must at least have a band gap of 1.8eV
(spectral range of visible light is from about Advantages of LEDs over incandescent lamps
O.41lm to 0.71lm i.e. from about 3 eV to 1.8 eV). [1) (i) Since, LEDs do not have a filament that can
16. (i) In n-type semiconductor, the semiconductor is burn out, hence, they last longer.
doped with pentavalent impurity. In it the (ii) They do not get hot during use, hence fast
electrons are majority carriers and holes are action, no warm up time required. [1)
minority carriers or n, > > nil (n,= number
IT Hand calculators, cash registers, digital clocks,
density of electrons, nh= number density of
ete. use seven-segment red or green displays. Each
holes). In energy band diagram of n-type
segment is an LED and depending on which
semiconductor, the donor energy level ED is
segment is energised, the display lights up the
slightly below the bottom of Ee conduction
numbers 0 to 9, as shown in figure.
band and thus, the electron can move to
LED segment
conduction band, even with small supply of
-I n
__+ .
energy. I:I:IU
H
Ec· • • • .}ED 0.01 eV
I. U "__1 I
,-, CC -100
~ - _11_1IU_I
Eg
18. When photodiode is illuminated with light due to
j breaking of covalent bonds, equal number of
O

additional electrons and holes come into

n-type [1)
existence whereas fractional change in minority
(ii) In p-type semiconductor, the semiconductor is charge carrier is much higher than fractional
doped with trivalent impurity. In this change in majority charge carrier. Since, the
semiconductor, the holes are the majority carriers fractional change of minority carrier current is
and electrons are the minority carriers i.e. measurable significantly in reverse bias than that
M

nil » n,. of forward bias. Therefore, photodiode are

--:"j---'--- Ec connected in reverse bias. [2)

19. A light emit ting diode is simply a forward biased

Eg
p-n junction which emits spontaneous light
0.01 eV {--i---------------· EA radiation. At the junction, energy is released in
o 0 0 0 0 0 0 0 ~ Ev the form of photons due to the recombination of
p-type the excess minority charge carrier with the
In energy band diagram of p-lype, the acceptor majority charge carrier. (1)
energy level is slightly above the top of valence Advantages:
band Ev' Thus, even with small supply of energy (i) Low operational voltage and less power.
electron from valence band can jump to level, E A (ii) Fast action and no warm up time required. [1)
and ionise the acceptor, negatively. [1)
CHAPTER 14 : Semiconductor Electronics 439

20. (i) The energy for the maximum intensity of the 22. Differences between forward and reverse biases
solar radiation is nearly 1.5 eV. In order to are given below:
have photo excitation, the energy of radiation
(hv) must be greater than energy band gap Forward bias Reverse bias
(Eg), i.e., hv » Eg• Therefore, the Positive terminal of Positive terminal of
semiconductor with energy band gap about battery is connected to battery is connected
1.5 eV or lower and with higher absorption p-type and negative to n-type and negative
coefficient, is likely to give better solar terminal to n- type terminal to p- type
semiconductor. semiconductor.

R
conversion efficiency. (1)
The energy band gap for Si is about 1.1 eV, Depletion layer is very Depletion layer is
while for GaAs, it is about 1.43 eV. The gas thin. thick.
GaAs is better inspite of its higher band gap
p-n junction offers very p-njunction offers
than Si because it absorbs relatively more energy low resistance. very high resistance.
from the incident solar radiations being of

SI
relatively higher absorption coefficient. (1)
An ideal diode have An ideal diode have
zero resistance. infinite resistance.
(ii) I
t (1/2 x 4 = 2)
Open circuit voltage (VAc)
A 23. With the formation of p-njunction, the holes
from p-region diffuse into the n-region and
(Vod -V
electrons from n-region diffuse into p-region and
B electron-hole pair combine and get annihilated.
Isc
This in turn, produces potential barrier, VB across
IT
Short circuit current the junction which opposes the further diffusion
characteristic of a solar cell through the junction. Thus, small region forms in
the vicinity of the junction which is depleted of
(i) V-I curve is drawn in the forth quadrant, free charge carrier and has only immotile ions is
because a solar cell does not draws called the depletion region. (2)
current but supply current to the load.
24. Circuit diagram of forward biased and reverse
H
(ii) In V-I curve, the point A indicates the biased p-n junction diode is shown below: (1)
maximum voltage Voc being supplied by
the given solar cell when no current is
being drawn from it. Voc is called the
open circuit voltage.
O

(iii) In V-I curve, the point B indicates the

maximum current lsc which can be
obtained by short circuiting the solar cell
without any load resistance. lsc is called
the short circuit current. (1)

21. Zener diode is used as voltage regulator. (112) B

M

Principle Zener diode is operated in the reverse The width of depletion layer
breakdown region. The voltage across it remains (i) decreases in forward bias.
constant, equal to the breakdown voltage for (ii) increases in reverse bias. (1/2 • 1 =1)
large charge in reverse current. (1) 25. The four valence electrons of carbon are present
mA in second orbit while that of silicon in third orbit.
Forward So, energy required to extricate an electron from
bias silicon is much smaller than carbon.
Therefore, the number of free electrons for
conduction in silicon is significant on contrary to
the carbon. This makes silicons is conductivity
much higher than carbon. This is the main
(1/2) distinguishable property. (2)
JlA
440 o Chopterwise CBSE Solved Papers PHYSICS

26. Device, D is a Zener diode. (1) (b) These electron hole pair move in opposite
Symbol of Zener diode (1) direction due to junction field. Their

-t>f-- movement in opposite direction creates

potential difference (photo-voltage).
(c) When load is connected in the external
27. Circuit diagram of illuminated photodiode in
circuit, current starts flowing through it
reverse bias is shown below: (1)
due to photo-voltage. (1)
1(~) 30. (i) The given diagram shown below.

R
Reverse bias ~v
11----- .•..
.111 v
12----- .•.. The circuit above can be redrawn as follows
h-----

74-----
14> h > 12> 11 I (mA)
Reverse bias currents through a photodiode
Hence, frequency of light v such that hv » E 9'
where E 9 i/i band gap of increasing intensity
I] ')2,13, ete. The value ofreverse saturation current
increases with the increase of intensity of light.
IT
Thus, the measurement of charge in the reverse
saturation current can give the intensity of
incident light.
28.
(i) Main use of photo diode In demodulation of
optical signal and detection of optical signal. (1)
In light operated switches, electronic counters.
H
(ii) Main use of Zener diode As DC voltage
regulator.
29. (i) D] diode is forward biased, hence current will
flow in B] bulb and D2 is reverse biased, so
O
SI
.---111------,
R
As the p-section is connected to negative
terminal of the battery, the diode shown is
reverse biased. (1)
(ii) During the first half of input cycle, the upper
end of the coil is at positive potential and
(1) lower end at negative potential. The function
diode D] is forward biased and D2 in reverse
biased. Current flows in output load in the
direction shown in figure. During the second
half of input cycle, D2 is forward biased. In
this way, current flows in the load in the
(1) single direction as shown in figure. (2)
01

there will be no current in B2. Hence, B] will

glow. (1)
(ii) The diagram of illuminated p-n junction solar
cell is given below
M

31. Two processes that takes place during the

p n
(iii) Processes due to generation of emf takes place
in a solar cell are given below
(a) When light photon reach the junction, the
excited electrons from the valence band
to conduction band creating equal
number of holes and electrons.
formation of p-njunction are diffusion and drift
of charge carriers.
In an n-type semiconductor, the concentration of
(1)
electrons is more than that of holes. Similarly, in a
p-type semiconductor, the concentration of holes is
more than that of electrons. Formation of
depletion region during formation of p-n junction
and due to the concentration gradient across p and
n-sides, holes diffuse from p-side to n-side
CHAPTER 14 : Semiconductor Electronics 441

(p -t n) and electrons diffuse from n-side to 33. (i)

p-side (n -t p). The diffused charge carriers
combine with their counterparts in the
Hole
immediate vicinity of the junction and neutralise
each other. (1)

Thus, near the junction, positive charge is built

on n-side and negative charge on p-side. (1)
p-type ~ n-type
- Electron diffusion Depletion layer

R
Electrondrift -

·ii::D
Electron drift~Electron diffusion

D eeE9E9
eeE9E9
pli j- - : ::f-Depletion region

SI
Hole diffusion'~ :.
: :- Depletion region
Hole diffusion- --Hole drift
-Hole drift
v
p-n junction formation process : .
: :
~ : : ve
This sets up potential difference across the X1: : :X2
junction and an internal electric field E, directed : : :
from n-side to p-side. The equilibrium is The small region in the vicinity of the junction
established when the field E, becomes strong which is depleted of free charge carriers and
enough to stop further diffusion of the majority has only immobile ions is called depletion
IT region. The accumulation of negative charges in
charge carriers (however, it helps the minority
the p-region and positive charge in the n-region
charge carriers to drift across the junction). (1)
sets up a potential difference across the
The region on either side of the junction which junction. This acts as a barrier and is called
becomes depleted (free) from the mobile charge barrier potential VB'
carriers is called depletion region or depletion
layer. The potential difference developed across
H
the depletion region is called the potential V'~
barrier. (1)

32. In Zener diode, both p and n-side of the function

are heavily doped. Heavy doping ensures high '-----\,...-~----.l.- 0 T/2 T t
junction field and low breakdown voltage. (1)
O

(1)
The circuit diagram of a voltage regulator using

0110'
a Zener diode is shown in figure. The
unregulated DC voltage is connected to the
Zener diode through a series resistance R, in
reverse biased. Thus, any charge in the input
M

voltage result is charge voltage drop across R, Step down Transformer

without any change in voltage across the Zener
diode. Therefore, Zener diode acts as a voltage Working
regulator. (1)
(a) During positive half cycle of input
alternating voltage, the diode is forward
r---~~VV~~-r-----'---O+ biased and a current flows through the
Load load resistor RL and we get an output
Unregulated voltage.
-=- voltage
Output
(constant (b) During other negative half cycle of the
voltage) input alternating voltage, the diode is
(Vz) reverse biased and it does not conduct
(under break down region). (1)
Excess current bypass when V.Xl ~ V, Hence, AC voltage can be rectified in the
(1)
pulsating and unidirectional voltage.
442 o Chapterwise CSSE Solved Papers PHYSICS

34. (i) Principle A solar cell works on the principle of
photo voltaic effect according to which when
light photons of energy greater than energy
band gap of a semiconductor are incident on
p-n junction of that semiconductor,
electron-hole pairs are generated which give
rise to an emf. Thus, working principle of a
solar cell is same as that of a photodiode.
However, no bias is applied in a solar cell and
When visible light of energy (hv > E 9) enters its
depletion region, the electron-hole pairs are
generated. These charge carriers are separated by
the junction's electric field and are made to flow
across the junction and causes reverse saturation
current. The value of the reverse saturation
current depends on the intensity of incident
radiation and is independent of reverse bias. (1)

R
the junction area is kept much larger so that The photo diode is operated in reverse bias
more solar radiation may be incident. condition because in the reverse bias condition,

cc;;J
the change in the reverse saturation current is
directly proportional to the change in incident
light intensity. Thus, photodiode can be used to
detect the optical signals. It cannot be done, if

SI
the photodiode is forward biased. (1)

Depletion layer
36. (i)
••• •
Generation of emf: Three basic processes are
• •

~:oo;·~vnn.n.n..m.~[EO
~ Ec • •
involved in the generation of emf by a solar cell Q)
c
when solar radiations are incident on it. These Q)

c
are e
,(a) t¥ generation of electron-hole pairs close t5
Q) -----<>--<>----
m --<>--<>---
IT
to the junction due to incidence of light
with photo energy hv ~ E b' (1'12)
••••
(b) the separation of electrons and holes due (a)
to the electric field of the depletion region. Energy band diagram of
So, electrons are swept to n-side and holes n-type semiconductor
to p-side. at T>O K
(1%)
(c) the electrons reaching the n-side are
H
collected by the front contact and holes
reaching p -side fIe ~llected by the back
contact. Thl!sL.p"''.,,~!<!e
btcomes positive and >- • •
n-side become negative giving rise to a ~
Q)
c
photovoltage. When a4 external load R L is Q)
c
O

connected as shown in figure, a e

photocurrent I L begins.cnflcw through the t5
Q)

load. ' "'.' y/ I m

(ii) Refer to Ans. 45 (i). (1'/2) • •
35. The photodiode is a special purpose silicon diode. (b)
It is fabricated with a transparent window to Energy band diagram of
M

expose its junction to light radiations. It always p-type semiconductor

works on the reverse bias condition below the at T>O K
breakdown voltage. (1) In n-type extrinsic semiconductors, the
hv>Eg number of free electrons in conduction band
is much more than the number of holes in
valence band. The donor energy level lies just
below the conduction band. In p-type
extrinsic semiconductor, the number of the
holes in valence band is much more than the
'--v---' '--v---' number of free electrons in conduction band.
p-side n-side The acceptor energy level lies just above the
- + R valence band.
CHAPTER 14 : Semiconductor Electronics 443

(ii) 40. In these type of questions, we have to mind that in

:>.
!? full-wave rectifier, full cycle of the input will be used.
Ql
c Eel
Ql
Eg The circuit diagram of full-wave rectifier is shown
C
e Ev below:
~ • • • • +
tn • •
• • • •

R
Energy band diagram of
semiconductor at T =0 K
At absolute zero temperature (0 K) conduction
band of semiconductor is completely empty,
i.e., 0=0.

SI
Hence, the semiconductor behaves as an
insulator. At room temperature, some valence
electrons acquire enough thermal energy and
jump to the conduction band where they are
free to conduct electricity. Thus, the
semiconductor acquires a small conductivity at
room temperature. (1'10)

37. The required energy band diagrams are given in +

Ans.36. (2)
The input and output waveforms have been given
IT
The donor energy level ED is just below the below:
bottom of the conduction band. At room
temperature this small energy gap is easily ~~
converted by the thermally excited electrons. The ~~Or----+----t----t----+--
£~
conduction band has more electrons as they have I
I
been contributed both by thermal excitation and I I I I

Due to:Due to: Due to'Due to:

H
donor impurities. Whereas the acceptor energy
level E A lies slightly above the top of the valence 01 : 02 : 01 : O2 :
I I I I
,I I I I
band. At room temperature, many electrons of ~Ql I I I I

the valence band get excited to these acceptor ~ Ol Or---'--+.;....;.--.f----f-'---+--

energy levels, leaving behind equal number of "S ~ : Time
o~ I
holes in the valence band. These holes can
O

I
(2)
conduct current. Thus, the valence band has more
holes than the electrons in the conduction bandrn , Its working.based on the principle that junction
diode offer very low resistance in forward bias
38. Refer to text. (Pg-425) (3)
and very high resistance in reverse bias. (1)
39. (a) A photodiode is fabricated by allowing light to
41. V-I characteristic of p-n junction diode
fall on a diode through a transparent window.
M

It is fabricated such that the generation of e-h

pairs take place near the depletion region. (1)
100
(b) Refer to Ans. 13.
80
V-I characteristics:
60
currentt mA
40
20
100 80 60
Reverse bias

'1-----~1Voltage
'2-----'
(2)
(1)
444 o Chnpterwise eBSE Solved Papers PHYSICS

(i) Under the reverse bias condition, the holes of For explanation of formation of p-n junction
p-side are attracted towards the negative Refer to Ans. 23.
terminal of the battery and the electrons of Potential barrier The accumulation of =ve'
the n-side are attracted towards the positive charges in the p-region and +ve charges in the
terminal of the battery. This increases the n-region sets up a potential difference across the
depletion layer and the potential barrier. junction (p-n) is called potential barrier (VB) which
However, the minority charge carriers are opposes the further diffusion of electrons and
drifted across the junction producing a small holes. (1]
current.

R
At any temperature, the number of minority 44. In these type of questions, we should mind that the
carriers \5 constant, so there is the small diode is connected reverse biased or forward biased.
current at any applied potential. This is the
(i) Photodiode is connected in reverse bias and
reason for the current under reverse bias to
feeble reverse current flows due to thermally.
be almost independent of applied potential.
generated electron-hole pair, known as dark

SI
At the critical voltage, avalanche breakdown
current. When light of suitable frequency (v)
takes pl~ce which results in a sudden flow of
such that hv » E 9' where E 9 is band gap is .
large current. (1]
incident on diode, additional electron-hole pair
(ii) At the critical voltage, the holes in the n-side generated and current grows in the circuit. ( 1)
and conduction electrons in the p-side are
(ii) Refer to Ans. 28 (i) (2]
accelerated due to the reverse bias voltage.
These minority carriers acquire sufficient (iii) Refer to Ans. 27. (1]

kinetic energy from the electric field and
collide with a valence electron.
IT
Thus, the bond is finally broken and the
valence electrons move into the conduction
band resulting in enormous flow of electrons
and thus, formation of hole-electron pairs.
Thus, there is a sudden increase in the
current at the critical voltage.
H
Zener diode is a semiconductor device which
operates under the reverse bias in the
breakdown region. .
42. Refer to Ans. 40.
43. ... 11-- .
O
45. (i) The energy for the maximum intensity of the solar
radiation is nearly1.5 eV. In order to have
photoexcitation, the energy of radiation (hv) must
be greater than energy band gap (E 9)' Therefore,
the semiconductor with energy band gap about
1.5 eV or lower than it and with higher absorption
coefficient is likely to give better solar conversion
efficiency. The energy band gap for Si is about
1.1 eV, while for GaAs, it is about 1.53 eV. The
GaAs is better inspite of its higher band gap than
(1] Si because it absorbs relatively more energy from
the incident solar radiations being of relatively
(3]
higher absorption coefficient. (1]
(ii) When light of frequency, v such that hv » E 9

/' ve " (band gap) is incident on junction, then

p I \
n
_ 0 --<>Ieee (±)(±)(±),__ 0 electron-hole pair liberated in the depletion
0-.0 0 Ieee
(±)(±)(±)I_ 0 _ region drifts under the influence of potential
rI o 0 o-Ieee (±)(±)(±)I--<> • • l- barrier. The gathering of these charge carriers
• --<> 0 Ieee (±)(±)(±)I__ 0 make p-type as positive electrode and n-type as
M

_ 0 --<>
Ieee (±)(±)(±)I_0 • negative electrode and hence, generating
I I photo-voltage across solar cell.
Depletion RL
layer
It
- IIII +
B ~v
During the formation of p-n junction, diffusion
of charge takes place. As, soon as p-type
semiconductor is joined with n-type
semiconductor, diffusion of free charges across
the junction starts. (2]
(2]
CHAPTER 14 : Semiconductor Electronics 445

remained charged to the peak voltage of the

46. (i) Working of LED LED is a forward biased
rectified output. (1)
p-njunction which converts electrical energy into
optical energy of infrared and visible light region. However, when there is no load and the
rectified voltage starts falling, the capacitor
Being in forward bias, thin depletion layer and low
gets discharged through the load and the
potential barrier facilitate diffusion of electron and
voltage across capacitor begins to fall slowly.
hole through the junction when high energy
electron of conduction band combines with the
low energy holes in valence band, then energy is

R
released in the form of photon, may be seen in the
form of light. (1)
(ii) Semiconductors with appropriate band gap (E 9)
close to 1.5 eV are preferred to make LED size
GaAs, CdTe, ete.
Filtered output

SI
The other reasons to select these materials are I
high optical absorption, availability of raw
material and low cost. (1)
-I
(iii) Uses of LEOs
(a) LED can operate at very low voltage and 48. Refer to Ans. 23 and 24. (3)
consumes less power in comparison to 49. (i) Refer to Ans. 24 for circuit diagram. (1)
incandescent lamps. (ii) (a) Refer to Ans. 22 for difference between
(b) Unlike the lamps, they take very less forward and reverse bias.
operational time and have long life. (1)
(b)
IT Reverse bia~ (V)
47. (a) X = Half-wave rectifier
Y = Full-wave rectifier -8 -6 -4
Transformer o x

Primary RL Output
H
10
B y
(1) 15
(Half-wave rectifier)
Centre-Tap Reverse bias characteristic curve (1)
O

Transformer V-I characteristicof a p-n junction in reverse

r----------, A Diode (0,)
, r-~'----~~.~----, bias is shown above.
Centre For forward bias V-I characteristic curve
Tap Refer to Ans. 41 (ii).
II B
x
50. Explanation refer to Ans. 21.
(1)

(2)
M

, L--+,~~--~>r----~
,-----------, Diode (02) RL Output

(Full-wave rectifier)
Unregulated
(b) Refer to Ans. 40. (1) voltage (Vz)
(c) A capacitor oflarge capacitance is connected in Iz
Regulated
parallel to the load resistor RL . When the
voltage (Vo)
pulsating voltage supplied by the rectifier is
rising, the capacitor C gets charged. If there is ! (1)
no external load, the capacitor would have
446 o Chapterwise CSSE Solved Papers PHYSICS

becomes depleted (free) from the mobile

51. Zener diode fabrication Zener diode is made by
heavily doping of both p and n-type
semiconductors and hence, the width of depletion
layer becomes thin which lead to produce large
electric field to increase the current even on
applying reverse voltage of 4 or 5 V.
For circuit diagram Refer to Ans. 59.
52. (i) p-n Junction A p-n junction is an
charge carriers is called depletion region or
depletion layer. The width of depletion
region is of the order oflO-6 m
The potential difference developed across the
(2) depletion region is called the potential barrier.
Potential barrier depends on dopant
(1)
concentration in the semiconductor and
temperature of the junction. (1)

R
arrangement made by a close contact of n-type
(ii) (a) Forward Biased Characteristics
semiconductor and p-type semiconductor.
There are various methods of forming p-n The circuit diagram for studying forward
junction diode. In one method, an n-type biased characteristics is shown in the figure.
germanium crystal is cut into thin slices called Starting from a low value, forward bias voltage
is increased step by step (measured by

SI
wafers. An aluminium film is laid on an n-type
wafer which is then heated in an oven at a voltmeter) and forward current is noted (by
temperature of about 600°C. Aluminium then ammeter). A graph is plotted between voltage
diffuses into the surface of wafer. In this way, and current. The curve so obtained is the
a p-type semiconductor is formed on n-type forward characteristic of the diode.
semiconductor. (1)
P n
Formation of Depletion Region in p-n
Junction In an n-type semiconductor, the
concentration of electrons is more than
IT
concentration of holes. Similarly, in a p-type
semiconductor, the concentration of holes is
more than that of concentration of electrons.
During formation of p-n junction and due to
the concentration gradient across p and
n-sides, holes diffuse from p-side to n-side
H
(p ~ n) and electrons diffuse from n-side to Battery
p-side (n ~ pl. (a)
- Electron diffusion 8
Electron drift -

iiiiDn'
~7

t:
O

p'

D I
eeee .
eeee o 4 Ge
: :- Depletion region 'E
Hole diffusion- ~ 3
-Holednft
~2
The diffused charge carriers combine with
M

their counterparts in the immediate vicinity of o

the junction and neutralise each other.
Thus, near the junction, positive charge is built
on n-side and negative charge on p-side. This
sets up potential difference across the junction
and an internal electric field E; directed from
n-side to p-side. The equilibrium is established
when the field E; becomes strong enough to
stop further diffusion of the majority charge
carriers (however, it helps the minority charge
carriers to diffuse across the junction). The
region on either side of the junction which
(1) o 0.1 0.2
FO~M
(b)
At the start when applied voltage is low, the
current through the diode is almost zero. It is
because of the potential barrier, which opposes
the applied voltage. Till the applied voltage
exceeds the potential barrier, the current
increases very slowly with increase in applied
voltage (OA portion of the graph).With further
CHAPTER 14 : Semiconductor Electronics 447

increase in applied voltage, the current increases current is voltage independent up to certain
very rapidly (AB portion of the graph), in this voltage known as breakdown voltage and this
situation, the diode behaves like a conductor. The voltage independent current is called reverse
forward voltage beyond which the current saturation current. (1)

through the junction starts increasing rapidly with Use of p-n Junction Characteristics in
voltage is called knee voltage. If line AB is Rectification
extended back, it cuts the voltage axis at potential From forward and reverse characteristics, it is
barrier voltage. (1) clear that current flows through the junction
diode only in forward bias not in reverse bias i.e.

R
(b) Reverse Biased Characteristics
The circuit diagram for studying reverse biased current flows only in one direction.
characteristics is shown in the figure. 53. (i) Refer to Ans. 52 (ii). (3)

P n (ii) Refer to Ans. 27. (2)

54. (i) Refer to Ans. 43. (3)

SI
(ii) Refer to Ans. 40. (2)

55. (i) Refer to Ans. 52 (i). (1)

(ii) Refer to Ans. 42. (1)
(iii) A full-wave bridge rectifier using four diodes
(full-wave bridge rectifier) gives a
continuous, unidirectional but pulsating
output voltage or current. (1)

The rectified output is passed through a filter

IT circuit which removes the ripple and an
Battery
L-----1- IIII j.:...+ __ -l almost steady DC voltage (or current) is
(a) obtained. (2)

56. Zener diode works only in reverse breakdown

Reverse bias (\I)
-10 -8 -8 -4 -2 0 region that is why it is considered as a special
purpose semiconductor. (1)
a
H
c 2 -c I - V characteristics of Zener diode is given below:
4.§. (1)
C I (mA)
Breakdown 6 ~
voltage 8
8 ~
O

Q) Forward bias
105i
a:
o -VM
(b)
In reverse biased, the applied voltage supports the
flow of minority charge carriers across the
M

junction. So, a very small current flows across the I(IlA)

junction due to minority charge carriers.
Motion of minority charge carriers is also
supported by internal potential barrier, so all the
minority carriers cross over the junction.
Therefore, the small reverse current remains
almost constant over a sufficiently long range of
reverse bias, increasing very little with increasing
voltage (OC portion of the graph). This reverse
Reverse current is due to the flow of electrons
from n -+ p and holes from p -+ 11. As, the reverse
biased voltage increase the electric field across
the junction, increases significantly and when
reverse bias voltage V = Vz' then the electric field
strength is high enough to pull the electrons
from p-side and accelerated it to n-side. (1)
448 o Chapterwise CBSE Solved Papers PHYSICS

These electrons are responsible for the high The two process involved in the formation of
current at the breakdown. p-n junction.
(a) Diffusion (b) Drift. (112 x 2 = 1)
Holes and electrons diffuse from p to n and n to
p respectively.
The majority charge carrier drifts under the
influence of applied electric field such that
Unregulated h_-.
I-_ •. ---e (a) holes along applied Eand
voltage
(b) electron opposite to E (1/2 x 2 = 1)

R
Regulated (ii) Zener diode is used as voltage regulator for
voltage, Vz explanation Refer Ans. 21 and Ans. 50
for circuit. (3)

58. (i) Refer to Ans. 52. (2)

(ii) Refer to Ans. 46 (i) and (ill). (3)

SI
Voltage regulator converts an unregulated DC
output of rectifier into a constant regulated DC 59. (i) Refer characteristics curve of Ans. 21. (1)
voltage, using Zener diode. The unregulated (ii) From the figure, it is clear that the device, X is
voltage is connected to the Zener diode through a a full-wave rectifier. Circuit diagram as shown
series resistance Rs such that the Zener diode is in figure below: (1)
reverse biased. If the input voltage increases, then R1
current through Rs and Zener diode increases.
+
Thus, the voltage drop across Rs increases without
Iz
any change in the voltage drop across Zener
Unregulated RL Regulated

f
IT
diode. This is because of the breakdown region,
voltage voltage (Vo)
Zener voltage remain constant even though the
current through Zener diode changes. Similarly, if
the input voltage decreases, the current through
1 1
(1)
Rs and Zener diode decreases. The voltage drop
Zener diode connected with unregulated DC
across Rs' decreases without any change in the
voltage in reverse bias. When the input voltage
voltage across the Zener diode. (1)
H
increases, then current through R\ increase and
Now, any change in input voltage results the hence, voltage drop across R\, increases while
change in voltage drop across Rs, without any voltage across the Zener diode remains
change in voltage across the Zener diode.Thus, constant. The voltage across Zener diode
Zener diode acts as a voltage regulator. (1) remains constant beyond Zener voltage and
hence, same/constant regulated voltage is
O

57. When we are dealing with depletion layer obtained across RL. (1)
formation we have to keep in mind the majority (ill) In n-type semiconductor,
charge carriers, diffusion will always happens from
high concentration to low concentration. n, > nh ... (i)

On incidence of light of suitable frequency,

(i) there is equal rise in number of electrons and
M

Fictitious battery holes [i.e. ill! (say) 1

Junction Va 1 1 tin ill!
Acceptor ion ~ -<-or-<-
», nh n, nh

Hole e
0
e0
e 0
e:e:0:0
o I
• I I
where, ill! = change in electron or hole charge
carrier. Thus, fractional change in minority
I I I

e
0
e0
e 0
e:e:0:0
0 I I I •
charge carrier (hole) is much higher than
fraction change in majority charge carrier
I I I

e
0
e0
e 0
e:e:0:0
0 I
• I I
(electron). Also, minority charge carrier
I I I contribute in drift current in reverse bias.
e
0
e0
e 0
e:e:0:00
o I
• •I I
0• Thus, with incidence of light, fractional change
in minority charge carrier is significant.
p-type 1.----1 n-type
Therefore, photodiode should be connected in
reverse bias for measuring light intensity. (1)
CHAPTER 14 : Semiconductor Electronics 449.

60. (i) Refer to Am. 52. (3) This action is known as half-wave rectification.
(ii) Refer to Am. 46. (2)

61. (i) Refer to Am. 56. (3)

(ii) Circuit diagram of p-n junction diode as ~~l°r----+----r----+----+--
E -g Time
half-wave rectifier is shown below:
p-n
+
A +
T

R
:50- ~~IO~---+----+----+----T--
c3 -g Time
R :5
o
(1)

B
1

SI
(1) 62 (i) Refer to Am. 52. (3)
From these two graphs we see that the
Diode conducts corresponding to positive half junction diodes operates mainly in forward
cycle and does not conduct during negative half bias, this characteristic of junction diode can
cycle, hence AC is converted by diode into be used to make it a rectifier.
unidirectional pulsating DC.
(ii) Refer to Ans. 40. (2)

[TOPIC 2] Transistors and Its Applications

IT
and Logic Gates
2.1 Junction Transistor n-p-n transistor
A junction transistor is three terminal Here, two thicker segments of n-type
H
semiconductor device consisting of two p-n semiconductor (emitter and collector) are separated
junctions formed by placing a thin layer of by a segment of p-type semiconductor (base).
Emitter Base Collector
doped semiconductor (p-type or n-type) between
two thick similar layers of opposite type.
E C
O

There are two types of transistor: n P n

p-n-p transistor
Here, two thicker segments of p-type (termed as
emitter and collector) are separated by a B
segment of n-type semiconductor (base). n-p-n transistor
M

Emitter Base Collector

Transistors Schematic
E C
Representation
n- p- n transistor p - n- p transistor
E C E P P C

B B
450 o ehopterwise eBSE Solved Papers PHYSICS

Transistor Action or n-p-n Transistor

Working of Transistor
p-n-p Transistor
From given figure, we can see that, the
emitter-base junction is forward biased.
Collector-base junction is reverse biased.
In the base, Ie and I c flow in opposite directions. In
this transistor, the emitter-base junction is forward
biased and its resistance is very low.
So, the voltage of VEE is quite small.
p-Base
n-Emitter n-Collector

-
. ....---'--0. '

R
n-Base
p-Emitter
. .
p-Colleetor
E n

-
..----'---.. :::: n C
p:::: ~ :::: p
Ie
E
0--

::::
0--:
I

J..
0--+

::::
0--
c -

SI
0---+ I 0---+ -VCB-
Ia
VES lc
- + -IIII~+---'
+ - + 11- VEE h Ie vcc
VEE Ie Ie Vcc
Flow of charge carriers in n-p-n transistor
n-p-n
Flow of charge carriers in p n p tronststor
E C
IT
B
t-----<~- II +
ie VEa Vcs
L-I f--~+ II - Action of n-p-n transistor and its biasing
H
Vca The collector base junction is reverse biased. The
resistance of this junction is very high. So, the voltage
Action of p-n-p transistor
of Vcc (VCB) is quite large (45 V). In n-p-n transistor,
and its biasing
the current is carried inside as well as in external
circuit by the electrons. Thus, in this [I b « Ie] case
O

The resistance of emitter-base junction is very also, IE = I B + I c [Kirchhoff's first law]

low. So, the voltage of VEE(VEB) is quite small In the base, IE and Ie flow in opposite direction.
(i.e., 1.5 'V).
The current in p-n-p transistor is carried by Transistors Configuration
holes and at the same time their concentration
M

is mMtroned. (i) Common Base (CB) mode

,.
(ii) Common Emitter (CE) mode
But in external circuit, the currentis due to
the flow of electrons. (iii) Common Collector (CC) mode
In this case,
I, = Ib + l ,
[using Kirchhoff's law]
2.2 Characteristics of a
where, Ie = emitter
current Transistor
I b = base current The graphical representation of the variations among
and I, = collector current the various current and voltage variables of a
transistor are called transistor characteristics.
CHAPTER 14 : Semiconductor Electronics 45t

Common Base Transistor Common Emitter Transistor

Characteristics Characteristics
Here, base-emitter circuit is forward biased with
Here emitter-base circuit is forward biased with battery VBE and emitter- collector circuit is '"'
battery VEEand collector-base circuit is reverse reverse biased with battery Vcc.
biased with battery Vcc.
I p-n-p
e C

R
I'

SI
The common base characteristics of a transistor are
of two types:
(i) Emitter or Input Characteristics A graphical
relation between the emitter voltage and emitter
current at constant collector voltage, is called These two characteristics can be studied
emitter or input characteristics. The graph is as shown below:
plotted between emitter current and (i) Emitter or Input Characteristics A
corresponding emitter voltage. graphical relation between the emitter
Ie (mA) VEB= - 4 V, VCB= -2 V
IT
. . . . . voltage and the emitter current by keeping
10 --t--i-- - ~---~-- collector voltage constant is called input
""""-IQ.)t I a' I I I
__ 8 - - + - - of - - :- -:- - -:- -- characteristics of the transistor.
~ 6 : : P: : : Ib(llA)
:J --i--i- ai--i--
o "JC\", 100
Ci3 4 --1"-- - -1--- t- --
VCE=10V
v,C::
H
t: :
'E 2 -- •.- - - -1- - -1- - -'- --
80
W I I I I I
, '0.5' 0.7' ,
'----L--,.L..:...-':-'-:-'---::-'-:,.......,...".-..... VEB M 60
0.2 0.4 0.6 0.8 1.0
40
Emitter-base voltage (VEB)-
20
O

(ii) Collector or Output Characteristics A

graphical relation between the collector voltage B
and collector current at constant emitter 0.2 0.4 0.6 0.8 1.0 VSEM ~
current, is called collector or output
characteristics. The graph is plotted between Input resistance It is defined as the
collector current and corresponding collector ratio of change in base-emitter voltage 1
M

voltage. (AVBE)to the resulting change in the base, 21

Ie (mA) current (AIb) at constant collector-emitter

(/8) Base current
voltage (VCE)'It is reciprocal of slope of
, , , , ,
~20 ,, ,, ,, , ,Ie =20mA I b - VBE cu:e. ~n(p:~B:e)sistance,
C , , , ,, ,
~15 'Ie
, =15mA
:J
o ,, ,, ,, ,, I AI b V
CE
= constant
010 ,, ,, ,, ,, 'I, e = 10 mA
(ii) Collector or Output Characteristics A
,, ,'I e =5mA
,, ,, ,
~ 5 graphical relation between the collector
8 -- - -- ' __ 'IA = OmA voltage and collector current by keeping
5V10V15V20V25V VcBM base current constant is called output
Collector voltage (VCB)- .characteristics of the transistor.
452 o Chopterwise CBSE Solved Papers PHYSICS

~
.s
10 lb
60 J.IA
/~P 1 -.!c
RL

~ 8 r: 50 J.IA
C\
V
CE
cP
L 1 :vcc
C Ie
40 J.IA Input Output
~ 6
:;
o
.9 4 " 30 J.IA
20 J.IA
AC
signal
VSE
Ib Ie
+ AC
signal

R
~ 10 J.IA Circuit diagram of transistor as on amplifier
"0
o 2
o 2 4 6 8 10 12 14 16 When no AC voltage is applied to the input circuit,
Collector to emitter voltage (VcE!in volts we have
NOTE From the output characteristics, we define Ie=Ib+I, ... (i)

SI
output resistance of transistor as the ratio of Due to collector current I" the voltage drop across
change in collector-emitter voltage to the load resistance (RL) is I,RL. Therefore, the
resulting change in collector current at constant collector-emitter voltage VCE is given by
base current. Thus, output resistance,
VCE = Vcc - IeRL ... (ii)
ra =(~VCE)
~/c Ib = constant Gains in Common-Emitter
= Reciprocal of slope of Ie - V CEcurve. Amplifier
IT
The current amplification factor (~) of a a and ~ parameters of a transistor are defined as
transistor in CE configuration is defined as the
ratio of change in collector current to the change
a =!.£ and ~ = !.£.a is about 0.95 to 0.99 and ~ is
Ie Ib
in base current at a constant collector-emitter
about 20 to 100. The various gains in a
voltage when the transistor is in active state.
common-emitter amplifier are as follows:
(i) DC Current Gain It is defined as the ratio of
H
.. ~AC=(~;:tE=constant the collector-current to the base current and
is denoted by ~DC- Thus,
Its value is very large (~AC
> > 1)
Region of Operation of Junctions
~DC =!.£ = _1_, _ = I,/Ie
i, Ie-I, I-I,/Ie
O

Region Collector Emitter junction [':Ie=Ib+I,l

junction
~=~ [.:a = I,IIel
Cut-off Reverse biased Reverse biased I-a
(ii) AC Current Gain It is defined as the ratio
Active Reverse biased Forward biased of the change in the collector-current to
M

the change in the base-current at a constant

Saturation Forward biased Forward biased
collector to emitter voltage and is denoted
by ~AC' ()

2.3 Transistor as an Amplifier Thus, ~AC = ~'

b VCE
(CE configuration) The value of~ is from 15 to 100, for a
An amplifier is a device which is used for transistor.
increasing the amplitude of input signal. The (iii) AC Voltage Gain It is defined as the ratio of
circuit diagram for p-n-p transistor as an the change in the output voltage to the change
amplifier is shown in the figure given below: in the input voltage and is denoted by Av.
CHAPTER 14 : Semiconductor Electronics 453

Suppose, on applying an AC input voltage A sinusoidally varying alternating voltage as shown

signal, the input base-current changes by in figure is the simplest analog signal. The
M b and correspondingly the output electronic circuits which process analog signals are
collector-current changes by Me' If Rin and called analog circuits.

Vb /\ /"
Rout be the resistances of the input and the
output circuits respectively, then

A_Me X Rout Me Rout

v- x--

R
si, xRin si, Rin
Now, Me/ si, is the AC current gain ~AC'
\J\J
(iv) AC Power Gain It is defined as the ratio
of the change in the output power to the
Digital Circuits

change in the input power.
Since, power = current x voltage, we have
. Change in output power
AC power gam = --"'-----"----'--
Change in input power
= AC current gain x AC voltage gain
= ~AC xAv
SI
Circuits use two discrete level of current or voltage
which are termed as binary signals. These two
values are represented as 0 and 1 (low or high i.e.
ON or OFF)
The electric circuits which process digital signals
are called digital circuits.
V

. Relationship between a and ~

IT Level1

~=~
I-a

and a=-~-
I+~
H
Voltage gain = Current gain x Resistance gain 2.5 Logic Gate
Feedback A gate is a digital circuit that follows certain
relationship between input and output voltage.
When a portion of the output power is returned
Logic gates are building blocks of electronic
O

back to the input in phase, this is termed as

circuits. In logic gates, there exist a logical
positive feedback.
relationship between output and input(s).
.r-=-i
Input fTrairiSiErtOr'l--------,
TransistorI It has one output but one or more inputs .
I II amplifier 1f-----------r~Output · Truth Table It is a table that shows all possible
input combinations and the corresponding
M

'----=------11 FeedbackU output combinations for a logic gate. .~

I network ~ · Boolean Operators Just as in ordinary algebra,
mathematical operators like addition, subtraction
2.4 Analog and Digital Circuits and multiplication are used, similarly, in Boolean
algebra three basic operators like OR, AND and
Analog Circuits NOT are used.

Circuits use signals (current or voltage) in the · Boolean Expression The expression shows the
form of continuous, time-varying voltage or combination of two Boolean variables that
current. results into a new Boolean variable is known as
Boolean expression.
454 o Chopterwise CBSE Solved Papers : PHYSICS

~----------------- .•.. ,
Basic Logic Gates A , \
\

There are three basic logic gates:

OR Gate
~r
5V.:r...
0, \
r
y

Boolean expression of OR gate is given as

-1
o~
B L__~~ ~~~~~_// -L
Y=A+B. Realisatian of AND gate
(a) It has two or more inputs and one output.

R
(b) In this gate, if anyone of the input or all the NOT Gate
inputs are 1, then output is 1. Boolean expression of NOT gate is given as Y = it .
Symbol (a) It has one input and one output.
(b) It gives an inverted version of its input i.e. if

SI
input is 1, then output is 0 and vice-versa.
Truth Table
Symbol ~ .
A B y

o o o Truth Table
o A y
o o
o
IT
A
.. ~~--------
\
.........•...•..
,,
,,

r: ,,
\
,,
\ 01
, , y
C
,r
,,
/
R /
/

-=
-;'
... /

,~
H
..J:...5V B I

'-- --_L?2..-
I
~'
--,-
~
o~
Realisatlon of OR gate
O

~
AND Gate
Boolean expression of AND gate is given as
Y=A·B
(a) It has two or more inputs and one output.
Reallsatlan of NOTgate
M

(b) It has output 1, only when all inputs are 1.

Symbol
A~y
~ Combination of Gates
B
Various combinations of three basic gates can be
Truth Table used to produce complicated digital circuits,
A B y which are also called gates. Different
combinations of basic gates are given below:
o o o
o o NOR Gate
o 0 Boolean expression of NOR gate is given as
Y=A+B.
CHAPTER 14 : Semiconductor Electronics 455

Here NOT operation is applied after OR gate. XNDR Gate

If all its inputs are 0, then its output will be l. Boolean expression of XNOR gate is given as
A~- Y = A· B = AB + AB.
Symbol B~Y=A+B
Here, XOR gate is followed by a NOT gate.
Truth Table
----------------------
Input Output Symbol

R
A B Y=A+B Truth Table
0 0 1
Y=A·B
A B
0 0
o 0

SI
0 0
1 0 o 0

o o
NAND Gate (NOT AND)
Boolean expression of NAND gate is given as
Y = A-B.
Here, AND gate followed by a NOT gate. Some Useful Laws of Boolean Algebra
(i) de-Morgan's Theorem It states that the
IT
If all the inputs are 1, then output will be O.
complement of the whole sum is equal to
Symbol ~~Y the product of individual complements and
vice-versa.
Truth Table (a) A+B=A·B
----------------~=---
Y=A·B
A B (b) A·B=A+B
H
o o de-Morgan's theorem also states that
o (a) A+B = A·B = A·B
o (b) A·B = A·B = A+B
O

o (ii) Commutative laws

NAND and NOR gates are called universal gates. (a) A+B=B+A
(b) A·B =B·A
XDR Gate (iii) Associative laws
Boolean expression of XOR gate is given as
= (A+B)+C
M

(a) A+(B+C)
Y=A-B+A·B=AE9B
(b) A·(B·C) = (A·B)·C
Symbol (iv) Distributive laws
Truth Table (a) A·(B+C) = A·B+A·C
A B Y=AEaB
(b) (A+B)·(A+C) = A+B·C
(v) Absorption laws
o o o (a) A+A·B =A
o (b) A·(A+A) =A
o (c) A.(A+B) = A·B
o
 8. The truth table of a logic gate has the form
given here. Name this gate and draw its
PREVIOUS YEARS' symbol.
-------------------------
A B Y
EXAMINATION QUESTIONS 0 0 1
TOPIC 2 0 1 1
1 0 1

o 1 Mark Questions 1 1 0
All India 2010C

R
1. In a transistor, doping level in base is
9. Give the logic symbol of NOR gate. All India 2009
increased slightly. How will it affect
(i) collector current and 10. Give the logic symbol of NAND gate.
All India 2009
(ii) base current? Delhi 2011

SI
11. Give the logic symbol of AND gate. All India 2009
2. Draw the logic circuit of a NAND gate
and write its truth table. 12. Define current amplification factor in
common-emitter mode of transistor.
Foreign 2011
All India 2010C, Delhi 2009C
3. Draw the logic circuit of AND gate and
write its truth table. Foreign 2011

4. Draw the logic circuit of NOT gate and

o 2 Marks Questions
write its truth table. Foreign 2011
13. Draw a circuit diagram of n-p-ri transistor
IT amplifier in CE configuration. Under what
5. Write the truth table for the following condition does the transistor act as an
circuit. Name the equivalent gate that amplifier? All India 2014
this circuit represents.
14. Write the truth
;~y table for the
combination of the
A
H
gates shown.
Foreign 2010
Name the gates
6. A given logic gate inverts the input used. All India 2014
applied to it. Name this gate and give
its symbol. Delhi 2010C 15. Identify the logic A~
O

gates marked P and B Q X

7. The truth table of a logic gate has the Q in the given circuit.
form given here. Name this gate and Write the truth table
draw its symbol. for the combination. Delhi 2014

A B y 16. The outputs of two NOT gates are fed to a

M

NOR gate. Draw the logic circuit of the

o o combination of gates. Give its truth table.
o o Identify the gate represented by this
o o combination. Delhi 2014C
o 17. The input waveforms A and B and the output
All Indio 2010C waveform Yof a gate are shown below.
 CHAPTER 14 : Semiconductor Electronics 457

Name the gate it represents, write its 20. Draw a typical output characteristics of an
truth table and draw the logic symbol of n-p-ri transistor
in CE configuration. Show
this gate. how these characteristics can be used to
A'
ri.L. I

I
determine output resistance? All Indio 2013
21. In the circuit shown in the figure, identify
I
I
the equivalent gate of the circuit and make
I

B its truth table.

A

R
I
I
I Y
ljr----;-----;
Y u
I
I
I
I
I
I
I
I
B
All Indio 2013

SI
I I I I
I I I I
I I I I
22. In the circuit shown in the figure, identify
t = 0 2 4 5 7
the equivalent gate of the circuit and make
All Indio 2014C
its truth table.
18. Identify the equivalent gate represented A
by the circuit shown in the figure. Draw
its logic symbol and write the truth Y
table.
B
IT
A All Indio 2013

23. In the circuit shown in the figure, identify

the equivalent gate of the circuit and make
its truth table.
A
H
B

Foreign 2014 B
19. In the given circuit diagram, a voltmeter All Indio 2013
V is connected across a lamp L. How
O

24. Describe briefly with the help of a circuit

would
(i) the brightness of the lamp and
(ii) voltmeter reading V be affected, if
the value of resistance R is
decreased? Justify your answer.
M
diagram, how the flow of current carriers
in a p-n- p transistor is regulated with
emitter-base junction in forward biased
and base-collector junction in reverse
biased. All Indio 2012

25. Distinguish between analog signal and

L digital signal. All Indio 2012

~+ 26. Draw the output waveform at X using the

i 9V
I
given inputs, A and B for the logic circuit
-'- shown below. Also, identify the logic
operation performed by this circuit.
R A
x
B
458 o ehapterwise eSSE Solved Papers PHYSICS

1
1
1
1
1
30. Write the truth table for the logic circuit

U 1
1
1
1
1
1
shown below and identify the logic
operation performed by this circuit.

n
1
1 1
1
1
Delhi 2011
1
1
1
1 A
i
1 <I 1
1 1 1
t1 t2 ! t3 t4 ts t6 . t7 ! !

R
Delhi 2012; 2011 y
27. In the given circuit, a voltmeter V is
connected across lamp L. What changes
would you observe in the lamp L and the B
voltmeter V if the value of resistor R is

SI
reduced? 31. Identify the logic gates X and Y in the
figure. Write down the truth table of
output Z for all possible inputs A and B.
All India 2011C
A
z
B
32. (i) For the digital circuit given
IT below, write the truth table showing
outputs Y1 and Y2 for all possible
inputs of A and B.
A Y1
B
Delhi +2DllC
(ii) Show output waveform for all
H
28. Draw the transfer characteristic curve of a possible inputs of A and B.
base-biased transistor in CE configuration. All India 2011C
Explain clearly how the active region of the
Vo versus Vi curve, in a transistor is used 33. (i) Identify the logic gates marked P and
as an amplifier? Delhi 2011 Q in the given logic circuit.
O

(ii) Write down the output at X for the

29. Draw the output waveform at X using the
inputs,
given inputs, A and B for the logic circuit
shown below. Also, identify the logic A = 0, B = 0 and A = I, B = 1 .
operation performed by this circuit. All India 2010
Delhi 2011; 2DDB .
M

A
x ~~x
B
1 1 1

AU 1
1
1
1
1
1
i
1
1
1
1
1
1
1
34. (i) Identify the logic gates marked P and
Q in the given logic circuit.

I
1 1
1
1
1
1 A~ Q X
BI I B
1 1 1
! ! !
t1 tz t3 t4 ts t6 t7
CHAPTER 14 : Semiconductor Electronics 459

(ii) Write down the output at X 39. Draw the logic symbol of the gate whose
for the inputs A = 0, B = 0 truth table is given as below:
and A = 1 , B = 1 .
Inputs Output
All Indio 2010
A B y
35. Define the following terms.
0 0 1
(i) Input resistance ri'
0 1 0
(ii) Current amplification factor 13 of a 1 0 0
transistor used in its CE

R
1 1 0
configuration. All Indio 2010C
If this, logic gate is connected to NOT gate,
36. The following figure shows the input
what will be the output when
waveforms A, B and the output
waveform Y of a gate. Identify the gate, (i) A = 0, B = 0 and (ii) A = 1 , B = 1 ?

SI
write it, .ruth table and draw its logic Draw the logic symbol of the combination.
symbol. Deihl 2009 Foreign 2009

Ah ,---
....
I
40. A logic gate is obtained by applying output of
OR gate to a NOT gate. Name the gate so
formed. Write the symbol and truth table of
this gate. Foreign 2009
I
8
41. A logic gate is obtained by applying output of
I I
AND gate to a NOT gate. Name the gate so
I
I I
I
I
IT I
formed. Write the symbol and truth table of
I I I I I

yU I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
U
I
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I
this gate. Foreign 2009
42. The two circuits shown here are a
0 1 2 3 4 5 6 combination ... r-___...
A
37. The output of a 2-input AND gate is y
H
fed to a NOT gate. Give the name of 8
the combination and its logic symbol.
Write down its truth table.
A
Deihl 2009, Foreign 2008
O

38. (i) Sketch the output waveform from

an AND gate for the inputs, A and
B shown in the figure.
I I I I 8
I I I I

LJ LJ (i) Three NAND gates.

M

A, I I
(ii) Three NOR gates.
I I I
I
I I
Write truth tables for each of these

n
I I I
I I
I
I
I
I
combinations. Delhi 2009C

o 3 Marks
I I
8'I I

I
I
I
I
I Questions
! ! !
0 1 3 4 5 6 7 43. For a CE transistor amplifier, the audio
(ii) If the output of the above AND signal voltage across the collector resistance
gate is fed to a NOT gate, name of 2 kn is 2V. Given, the current amplification
the gate of the combination, so factor of the transistor is 100, find the input
formed. Delhi 2009 signal voltage and base current, if the base
resistance is 1 kn. Deihl 2017
460 o Chapterwise CBSE Solved Papers PHYSICS

44. (i) Write the functions of the three 49. Output characteristics of an n-p-ri
segments of a transistor. transistor in CE configuration is shown in
(ii) The figure shows the input the figure. Determine
waveforms A and B for 'AND' gate.
Draw the output waveform and write 50mA
the truth table for this logic gate.
t, t2 t3 t4 t5 t6 t7 t8
, I I
I I I

R
I I I

A I

~n
I
I
(Input)

SI
I
I
I

All India 2017

a 2 4 6 8 10 12 14 16 18
VCE(V) -

(i) dynamic output resistance

45. (i) Write the functions of three
segments of a transistor.
(ii) Draw the circuit diagram for
studying the input and output
characteristics of n-p-n transistor in
IT
common emitter configuration.
Using the circuit, explain how input,
output characteristics are obtained.
Delhi 2016
46. Identify the gates P and Q shown in the
figure. Write the truth table for the
H
combination of gates shown in figure
below:
A ----1;\.-~
O
(ii) DC current gain and
(iii) AC current gain at an operating point
VCE = 10 V, when IB = 30 ~A.
Delhi 2D13
50. Draw the transfer characteristic of a
base-biased transistor in CE configuration.
Mark the regions where the transistor can
be used as switch. Explain briefly its
working.
51. You are given a circuit below. Write its
truth table. Hence, identify the logic
operation carried out by this circuit. Draw
Y the logic symbol of the gate which
corresponds to All India 2011

B~
X
A
Name the equivalent gate representing
this circuit and write its logic symbol.
z
Deihl 2015

47. Draw a circuit diagram of a CE transistor

M

B
amplifier. Briefly explain its working and
write the expression for (i) current gain, 52. You are given a circuit below. Write its
(ii) voltage gain of the amplifier. Deihl 2015 truth table. Hence, identify the logic
48. Draw a circuit diagram of a transistor operation carried out by this circuit. Draw
amplifier in CE configuration. the logic symbol of the gate which
Define the terms corresponds to All India 2011
(i) input resistance and A
(ii) current amplification factor. How are
these determined using typical input z
and output characteristics?
B
All India 2015
CHAPTER 14 : Semiconductor Electronics 461

53. Draw transfer characteristics of a

common-emitter n- p-n transistor. Point A
tt1JJlljj
~--+-- I : '---I : : :

out the region in which the transistor ! !

operates as an amplifier. B LlJTI1Itj
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Define the following terms used in ,, ,,
transistor amplifiers: G1', '+--I'-+--I
(i) Input resistance ,,

R
(ii) Output resistance G2: I---+-+--+--+---1
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(iii) Current amplification factor.

Foreign 2011

54. Draw the general shape of the transfer

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characteristics of a transistor in its

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58. Draw the labelled circuit diagram of a
CE configuration. Which regions of this common-emitter transistor amplifier.
characteristic of a transistor are used Explain clearly, how the input and output
when it works as an amplifier? All Indio 2010C signals are in opposite phase? All India 2009
55. Give the circuit diagram of a 59. The inputs A and B are inverted by using
common-emitter amplifier using an n-p-ri two NOT gates and their outputs are fed
transistor. Draw the input and output to the NOR gate as shown below:
waveforms of the signal. Write the
A
expression for its voltage gain.
IT
HOTS. All Indio 2010
y
56. The inputs A and B shown here are used
as the inputs for three different gates G1,
G2 and G3• The outputs obtained in the
three cases have the forms shown. Analyse the action of the gates (1) and (2)
H
Identify the three gates and write their and identify the logic gate of the complete
truth tables. All India 2009C
', circuit so obtained. Give its symbol and
•

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8'
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the truth table. All India 2009

o 5 Marks Questions
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60. (i) Differentiate between three segments
of a transistor on the basis of their
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size and level of doping.
(ii) How is a transistor biased to be in
, , ,
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(iii) With the help of necessary circuit
2,
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diagram, describe briefly, how n-p-ri
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transistor in CE configuration
amplifies a small sinusoidal input
01234567
voltage. Write the expression for the
57. The inputs A and B shown here are used AC current gain. Delhi 2014
as the inputs for three different gates G1, 61. (i) Explain briefly with the help of a
G2 and G3 one by one. The outputs circuit diagram, how an n- p-n
obtained in the three cases have the forms
transistor in CE configuration is used
shown. Identify the three gates and write
to study input and output
their symbols.
characteristics.
All India 2009C
462
(ii) Describe briefly the underlying
principle of a transistor amplifier
working as an oscillator. Hence, use
the necessary circuit diagram to
explain how self sustained
oscillations are achieved in the
oscillator. Delhi 2D14C
62.
(i) Draw the circuit diagram of an
n-p-ri transistor with emitter-base
junction forward biased and
collector-base junction reverse
biased. Describe briefly, how the
SI
motion of charge carriers in the
transistor constitutes the emitter
current IE' the base current IB and
the collector current Ie. Hence,
deduce the relation, IE = IB + Ie·
(ii) Explain with the help of a circuit
diagram, how a transistor works as
an amplifier? All Indio 2D14C
63.
IT
(i) Why is the base region of a
transistor thin and lightly doped?
(ii) Draw the circuit diagram for
studying the characteristics of an
n-p-n. transistor in common-emitter
configuration.
H
Sketch the typical (a) input and
(b) output characteristics in this
configuration.
(iii) Describe briefly, how the output
characteristics can be used to
O
obtain the current gain in the
transistor? Deihl 2D13C
64. The set-up shown below can produce an
AC output without any external input
signal. Identify the components 'X' and
M
'Y' of this set up. Draw the circuit
diagram for this set-up. Describe briefly
its working. Ail Indio 2D12C
Input Output
~ ~
o ehopterwise eSSE Solved Papers PHYSICS
65. Draw a simple circuit of a CE transistor
amplifier. Explain its working. Show that
the voltage gain Av of the amplifier is given
by A v = 13AcR L / rj' where 13AC is the current
gain, RL is the load resistance and rj is the
input resistance of the transistor. What is
the significance of the negative sign in the
expression for the voltage gain. Deihl 2012
R
66. (i) Draw the circuit for studying the input
and output characteristics of a
transistor in CE configuration. Show
how from the output characteristics the
information about the current
amplification factor (13 AC) can be
obtained.
(ii) Draw a plot of the transfer
characteristics (V, versus Vi) for a
base-biased transistor in CE
configuration. Ail Indio 2010; Foreign 2012
67. (i) Using the necessary circuit diagram,
draw the transfer characteristics of a
base-biased transistor in CE
configuration. With the help of these
characteristics, explain briefly how the
transistor can be used as an amplifier?
(ii) Why are NAND gate called universal
gates? Identify the logical operations
carried out by the circuit given as
below: Foreign 2011
A
y
B ~--,'---"
68. (i) Draw the circuit diagram of a
base-biased n-p-n transistor in
CE configuration. Explain, how this
circuit is used to obtain the transfer
characteristic Vo - Vi characteristic.
(ii) The typical output characteristics
Ie versus VCEof an n -;r n transistor in
CE configuration is shown in the figure.
Calculate
(a) the output resistance ro and
(b) the current amplification factor I3AC'
Forelan 2010
CHAPTER 14 : Semiconductor Electronics 463

~ 10 o Explanations
c 8.5
.- 8 60mA
;g I'.. 1. (i) Collector current decreases.
50mA
V (ii) Base current increases. (1/2 x 2 = 1)
6 40mA
/ 2. Logic circuit of a NAND gate
30mA
4 Truth table
20mA
A B Y=A·B

R
10mA
2 /
0 0 1
o 2 4 6 8 10 12 14 16
Collector to emitter voltage (VC8 in volts 0 1 1
1 0 1
69. (i) Draw the circuit diagram used for 1 1 0

SI
studying the input and output (1/2 x 2 = 1)
characteristics of an n- p-re transistor 3. Logic circuit of a AND gate
in the CE configuration.
Show the typical shapes of these two
characteristics.
:=O-y
(ii) How are the Truth table
(a) input resistance
A B Y=A·B
(b) current amplification factor of the
IT
transistor determined from these 0 0 0
characteristics? Delhl2010C 0 0
70. (i) Draw a circuit diagram to study the 0 0
input and output characteristics of an
n -p - n transistor in its common-
emitter configuration. Draw the (1/2 x 2 = 1)
H
4. Logic circuit of a OT gate
typical input and output
characteristics.
(ii) Explain with the help of a circuit
A--t>----y
diagram, the working of an n -p- n Output is high when input is low and vice-versa.
O

transistor as a common-emitter Truth table

amplifier. Delhl2009C
Input Output
71. Draw a circuit diagram of an n- p-ri
transistor with its emitter base junction A Y=A
forward biased and base- collector o
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junction reverse biased. Describe briefly

o
its working. Explain, how a transistor in
active state exhibits a low resistance at (112 x 2 = 1)
its emitter-base junction and high 5. The given combination consists of NOR gate and
resistance at its base-collector junction? NOT gate, so equivalent gate is OR gate.
Foreign 2009 Truth table
72. Draw a labelled circuit diagram of a A B Y=A+B
base-biased transistor in common-emitter 0 0 0
configuration. Plot the transfer 0 1 1
characteristics of this base biased 1 0 1
transistor indicating the different regions 1 1 1
of its operation. Delhl2009C (112 x 2 = 1)
464 o Chopterwise C8SE Solved Papers PHYSICS

From the truth table, it is clear that the output is 15. The logic gates are P is NAND gate and Q is OR gate. (1)
1 only when at least one of the inputs is at the
The truth table is given as shown below:
high state i.e. 1
6. This logic gate is NOT gate and its symbols A B A·B A·B X=B+A-B
A ----{:>o----- y = Ii
0 0 0 1
(1)
0 I 0 1
7. Logic gate is NOR gate. 1 0 0 1

:=I>-y
Symbol 1 1 1 0

R
(1)
16. Refer to Ans. 21. (2)
NOR gate (112" 2 = 1) A0---1 )<0---'-'--\
8. Logic gate is NAND gate. :o---y
Bo----I ")(}---'"'---{

SI
Refer to Ans. 2. (1/2 " 2 = 1)
9. Logic gate is NOR gate. 17. Refer to Ans. 2. (2)
Symbol Refer to Ans. 7. (1) 18. Refer to Ans. 23. (1)
10. Refer to Ans. 2. (1) and logic symbol is
11. Refer to Ans. 3. (1)

12. Current amplification factor in common emitter :~Y=A+B

(1)
mode,
19. The given figure in question is common-emitter (CE)
I
PAC = tilc I configuration of an n-p-n transistor. The input circuit
IT
ti I B VCE = constant (1) emitter is forward biased and collector circuit is
13. Circuit diagram of n-p- n transistor amplifier in CE reverse biased. (1)

configuration is given below: As, the base resistance R decreases, the input circuit
Ie will become more forward biased thus, decreasing
the base current (IB) and increasing the emitter
current (IE). This will increase the collector current
H
(Icl as IE =~B + Ic· .
Vec When Ic increases which flows through the lamp,
the voltage across the bulb will also increase thus
making the lamp brighter and as the voltmeter is
connected in parallel with the lamp, the reading in
the voltmeter will also increases.
O

(1)

Ie Ie 20. Output characteristics is the plot between

collector-emitter voltage (VCE) and the collector
current (Ie) at different constant values of base
current (18).
The condition for the amplifier to work is that
M

the base-emitter junction should be forward

biased and collector-base junction should be ~ 10 Base current (Is)
reversed biased. (2)
.s 60 jlA
14. The truth table is given as shown below: ~ 8 I:.. 50 jlA
A B Y'=A+ B Y = A·(A + B) c
~ 6 40 jlA
0 0 0 0
:so /
30 jlA
0 1 1 0 o 4 20 jlA
1
1
0
1
1
1
1
1
U
~
8 2
, 10 jlA

o 2 4 6 8 10 12 14 16
The logic gates used are R is OR gate (1)
Collector to emitter voltage {VcE! in volts
and S is AND gate. (1) (1)
CHAPTER 14 : Semiconductor Electronics 465

Output resistance is defined as the ratio of 23. Y=A'·B'=A+B=A+B

variation of collector-emitter voltage (dId and
corresponding change in collector current (dI d A
when base current remains constant. Initially Y=A'·B'
with the increase in VeE the collector current
B
increases almost linearly. this is because the (1)

junction is not reverse biased. When the supply

Truth table
is more than required to reverse bias. the
base-collector junction. Ie increases very little B' = B· B Y = A· B

R
A B A'=A·A
with VeE. The reciprocal of slope of the linear =A+B
part of the curve gives the value of output
resistance. i.e. ro = (dsi; )IB
VeE = constant
(1)
001
o I I
I
o
0
I
100 I 1

SI
21. A I I 0 o I

Thus. the equivalent gate is OR gate. (1)

Y
24. Emitter-base Collector-base
B jUnctio~ \ ( ~unction
A'= A. B'=B n
()--+ ()--+

~ Y'= A'B'
()--+ ()--+

Y = y= A' + B' ()--+ ()--+

IT
~ =A·B=A·B (1)
Ic
Forward Reverse
IE 18
The equivalent gate of the given circuit is AND biasing biasing
gate.
+
Truth table II
VEB VCB (1)
A B A' B' Y' Y
H
Heavily doped emitter is subjected to electric field
I I 0 0 0 I by emitter-base battery and consequently. holes
I 0 0 I 0 gets drifted towards collector through thin and
0 I I 0 I 0 lightly doped base region. Nearly 5% hole. which
drifted from emitter combined with electron in base
0 0 I I I 0
O

region and remaining nearly 95% hole reaches to

(1) collector under the influence VeE. (1)
22. Y1 = A and Y2 = 13 25. A signal in which current or voltage changes
continuously with the time is called analog
. . Y = Y1 + Y2 = Y1 . Y2 signals. A signal in which current or voltage can
take only two discrete values is called a digital
=A·B=A·B
M

signal. Example of analog circuit amplifier. radio.

The equivalent gate of the given circuit is AND oscillator etc. Examples of digital circuit VCR.
gate. (1) electronic watches. robots. modern computers.
(lx2=2)
Truth table

A B II Yz Y
Eorl
I I 0 0 I
I 0 0 I 0 o~~--~--,---+------+------~--
0 I I 0 0
0 0 I I 0
Analogsignal
(1) (Asinusoidallyvaryingalternatingvoltage)
466 IZI ehapterwise eBSE Solved Papers PHYSICS

Pulse duration
l
forI Pulse
1

rise \
1
Pulse
amplitude
Rs
O~--~O----~--~O----~--~--~~ B
Time-
Digital signal

26. Equivalent gate is OR gate. If input A or B or both VBB

R
are 1. then the output of OR gate is 1. Boolean
expression of OR gate is given as A + B = X
Logic symbol of OR gate and the output

::=[>---0
waveform as shown below: (1)

X =A + B Applying Kirchhoff's rule to the input and output

SI
circuits separately. we get
I I 1 I 1 I I I 1 I
VBB = VBE + [BRB
A~
I
:
I
:
I
I 1
I
I 1
I
I
I
:
I
I
VCC = VCE + IeRe
B~ VCE = Vee - IeRe
I I I I I I I
I I I I I I I
I I I I I I I VBB = DC input - voltage (V;)
: t-----:---t---i ~
X ~ii}---1i
....... VCE = DC output - voltage (Vo)

Truth table As. V; increases slightly above 0.6 V. a current Ie

IT
flows in the output circuit and the transistor
Inputs Output
arrives in active state.
A B X=A+B
.. Vo=Vcc-IeRe
0 0 0 with the growth of Ie. Ve decrease linearly.
0 I 1
Also. voltage gain in active state is given by
H
1 0 1
Av = - ~Vo (':~Vo > ~V;)
1 I I (2) ~V;
27. Lamp glows brighter and voltmeter reading There is voltage gain and hence amplification of
increases with the decrease of R. Input current voltage takes place. Thus. transistor used as an
increases in turn by transistor action which will amplifier. (1)
O

lead to increase in collector current. This makes

lamp brighter and hence. voltmeter reading goes 29. Logic circuit behaves like an AND gate
up. (2) For truth table (1)
28. The transfer characteristic curve of base biased Refer to Ans. 3.
transistor in CE configuration as shown below:
t, tz t3 t4 ts t6 t7 t8
r I I I I I I I
: r-r--:
I
M

Cut-off Active 1 Saturation :. : M

region region: region
~ l--...:.-.l : :
--- ----+" A I I I I I I :
I
I
I
I
(Inputs):
,"1:
~
:
: r---i1I I

:
I
:
:

l--...:.-.l
r--i:
I

n
I
I
I
B I I I : I I I
I I I I I 1 I
I
I I I I I I
I I I I I I
I I I I I I
I X " , 1 '
I
I (Output) ! I I ! I I ! (1)
I
I
I
I
I Logic operation of the graphic circuit
I

X=A·B=AB
Vj-
CHAPTER 14 : Semiconductor Electronics 467

30. The truth table of given system is as follows: (1/2) 34. (i) P: NOT gate and Q: OR gate
(U) X = (A + B) [1/2x2= 1)
A B C=A·A D=A·B Y=C·D
For A = B = 0, X = 0 + 0 = 1 + 0 = 1
0 0 1 1 0 For A = 1, B = 1, X = T + 1= 0 + 1= 1 (1)
0 0 1
35. (i) The input resistance, rj of transistor in CE
1 0 0 1 1 configuration is defined as the ratio of small
0 1 1 0 1 change in base-emitter voltage to the

R
corresponding small change in the base current,
(l1/a)
when the collector emitter voltage is kept
The correct performs the logic operation of OR constant, i.e.
gate.
31. X: AND gate
~:BLE=

SI
Y: NOT gate r. = ( constant
(1)
Z: Y=A·B (112 x 2) (U) The current amplification factor of a transistor in
CE configuration is equal to the ratio of the small
A B z
change in the collector current (Md to the small
o o change in base current when collector-emitter
o voltage is kept constant, i.e.
o
o
~= (Me)
MB vCE ::::constant (1)
IT
(1) 36. Gate From the given output waveform, it is clear
32. (i) As, Y1 = A + B, Y2 = A + B that output is zero only when both inputs are 1, so
the gate is NAND gate. (112)
A B Y1 Y2 Truth table
0 0 0 1
A B Y
H
0 1 1 0
1 0 1 0 o 0
1 1 1 0
(1)
o
(U) t1 t2 ts t4 ts te t7 o
I
O

I I I I I I
I
I
I
I
I
I
I
I o
I I I I (1)
(Inp:t:l
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I Logic symbol

~:=[J-Y
I I I I I I I
I I I I I I I
B
M

Y= AB (1/2)

37. When output of a two inputs AND gate is fed to a

NOT gate, then the combination is called NAND
Y2 gate
(Output)
33. (i) P:

(U) X=A·B+
NAND gate; Q: OR gate
B
For A = 0, B = 0, X = 0.0 + 0 = 1 + 0 = 1
(1I2x2=
(1)

1)
Logic symbol

~=cr-Y
For truth table, refer Ans. 36.
(1)

(1)

For A =1, B = 1, X = 1.1 + 1 = 0 + 1 = 1. (1)

468 o ehopterwise eBSE Solved Papers PHYSICS

38. (i) Output of AND gate is Y = A·B. In this case, 42. (i)
output will be I only when both inputs A A B B Y=A+B=A+B
are 1.
0 1 0 1 0

A--+- iHJ
I
I
I
I
I
I
0
1
1
I
0
0
0
I

I
0

0
1
I
1
1
(Inputs)

i H (ii)
(1)

R
8 -~--+---!I I I
I I I A A B B Y=A+B=A·B

n
I I I
il
I
I
I
I
0 I 0 1 0
I I
0 1 I 0 0
X I I ::
(Output) 0 1 ; ; 4 5 ~ ~ 1 0 0 I 0

SI
1 0 1 0 1
Input and output waveforms for an AND gate
(1)
(1)
43. Given, amplification factor = iL = 100
(ii) NAND gate will be formed. (1) ib
39. NOR gate i = collector voltage = __ 2_ = 10-3 A
c collector resistance 2 x 103
Symbol
. _ i, _ 10-3 -10-5 A
Ib------
100 100
IT (1) (1)

3
Also given, base resistance = 10 Q
On connecting the given gate with NOT gate,
the output Input signal voltage = ib x R = 10-5 X 103y = 10-2 v (1)
Y=A+B=A+B 10-2 10-5 A
Base current = input signal voltage = -- =
(i) If A=O,B=O~Y=A+B=O+O=O base resistance 103 (1)
H
(ii) If A=l,B=1 44. (i) The functions of all the three segments of
Y=I+I=1. (1) transistor are given below.
40. Logic gate The emitter supplies the majority carriers for

~=D---v-Y current flow. The collector collects them. The

base acts as an accelerator for charge carriers
O

and send them to collector. It also regulates the

Equivalent so formed gate is NOR gate. flow of majority carriers in the circuit. (1)

(ii) Output of an AND gate is at high potential when

Symbol

~=D-Y (1)
both inputs A and B are supplied with high
potential. So, waveform is (1)
M

t1 t2 t3 t8
,, ,, ,
Truth table Y =A + B ,, , ,,,
,, ,
A A B B Y=A·B ,,
A:, ,,
, ,
0
0
0
0
0
1
0
0

0
0
0
0
(Input) l
, ,
8'i-,, --;.-
,,
,,
,
~n ,,
,,
,,
,,
,,,
,,
(1)
,, ,
(Output) (Y) :;-----;.-,
,,
41. NAND gate will be formed for logic symbol and ,,
truth table, refer to Ans. 36. (2) ,
CHAPTER 14 : Semiconductor Electronics 469

Truth table for AND gate is given below.

Inputs Output 100

VCE = 1 V
y
80
A B VCE = 5 V
60
o o o VcE=10V
40
o o
20

R
o o

0.2 0.4 0.6 0.8 1.0 VSE(V) (1]

(1]
Input resistance (r;) This is defined as the
45. (i) Functions of three segments of a transistor are ratio of change in base-emitter voltage (6V BE)

SI
as follows: to the resulting change in base current (MB)
Emitter It supplies a large number of majority at constant collector-emitter voltage (VCE). This
charge carriers for the flow of current through is dynamic (AC resistance) and as its value
the transistor. varies with the operating current in the
Base It controls the flow of majority charge transistor.
carriers from emitter to collector.
Collector It collects a major portion of the
r; = (~BE)
B VCE
majority carriers supplied by emitter for the
(b) Output characteristics A graph showing
circuit operation.
IT
the variation of collector current Ie with
collector emitter voltage VCE at constant base
current IBis called the output characteristic of
the transistor.
A study of these curves reveals the following
features.
H
R8 Vcc (i) When the voltage VCE increases from 0 to
about 0.2 V, the collector current Ie
VBB increases rapidly.
(ii) Once the voltage VCE exceeds the knee
voltage the output current Ie varies very
slowly but linearly with VCE for a given
O

Circuit arrangement for studying the input and output

base current lB. (1)
characteristics of transistor in CE configuration (1]

(a) Input characteristics Input characteristic

~12.5
means we have to plot the graphical .~ Base current (/a)
representation between I Band VBE. VBE is the ~ 10 60 J.IA
M

emitter to base voltage or the forward bias /'

C 7.5
50 J.IA
voltage and IB is the base current. In this ~ 40 J.IA
forward biasing, E is at lower potential than B. ::::l 30 J.IA
o 5 20 J.IA
We will be plotting IB versus VBE because base
is at higher potential than emitter, so that will j 2.5
(5
V
10 J.IA
be reflected here. Now go on varying VBE. For u
silicon diode we have knee voltage around o 0.5 1 1.5 2 2.5 3 3.5 4
0.7 V. After overcoming the knee voltage, Collector to emitter voltage (VCE) in volts
current will rise sharply. (ill) Output resistance (ro) This is defined as
The input characteristic will be different if we the ratio of change in collector-emitter
go on increasing the VCE. It will be shifting voltage (6VCE) to the change in collector
BE
right, means for the same V we will be current (Mcl at a constant base current IB:
getting lower input current lB.
470 121 Chapterwise CSSE Solved Papers PHYSICS

46. Consider the given figure, Due to collector current Ie' the voltage drop
across the load resistance (Rd is IeRL. Therefore,
A -----l;'\~ y the collector emitter voltage VCE is given by
B~ VCE '"' Vcc - IeRL ... (ii)
when the input AC voltage signal is applied across
P is AND gate and Q is a NOT gate. (1) the base-emitter circuit, it changes base-emitter
Truth Table voltage and hence, emitter-current IE changes
which in turn changes the collector current Ic.

R
A B X X=y So, the collector-emitter voltage VCE varies in the
0 0 0 1 accordance with Eq. (ii).
0 1 0 1 This variation in VCE appears as an amplified
output. (1)
1 0 0 1
Current gain and voltage gain of amplifier

SI
(1)
1 1 1 0
(i) DC current gain, ~DC = Ie
Is
The equivalent gate representing this circuit is
NAND gate. Its logic symbol is AC current gain, ~AC = (!Hc )VCE
Ills
A~ -
B~Y=A.B
(1) (ii) AC voltage gain, A v = II Ie X R
II t,
X R
47. Circuit diagram of a CEtransistor amplifier
IT = llIe x~
Ie
st, R (1)

48.
p-n-p RL

VCE
0 ~
H
V IE OutputAC
::=::
L
InputAC
signal -=-
+
Vcc signal

IB Ie (1)
VBE (1)
O

(i) Input resistance may be defined as the ratio of

Working
the small change in the base - emitter voltage
The emitter-base circuit is forward biased by a (IlVse) to the resulting change in base current
low voltage battery VSE' that means the resistance (Is) at constant collector-emitter voltage (VCE) .
of input circuit is small. The collector-emitter
Input resistance, R; = II VBE (1)
circuit is reversed biased by a high voltage battery si,
M

Vco that means the resistance of the output

(ii) Current amplification factor (r) is defined as
circuit is high.
the ratio of change in emitter current (ME) to
RL is a load resistance connected in
the change in base current (MB).
collector-emitter circuit.
.
u. r=ME m
The weak input AC signal is applied across the si,
base-emitter circuit and the amplified output is
obtained across the collector emitter circuit. 49. (i) Dynamic output resistance is given as
When no AC voltage is supplied to the input R" t = (IlVCE) 12-8
circuit, we have u llIc IB~ constant (3.6- 3.4) X 10 3
... (i)
4 = 20kn
0.2 x 10-3 (1)
CHAPTER 14 : Semiconductor Electronics 471

(ii) DC current gain, 51. Truth table of given circuit is as shown below:
~DC = Ie = 3.5 mA 3.5 X 10-3
A B X=A Y=B Z=X+Y
I8 30~A 30 X 10-6"

= 350 = 116.67 0 0 0
3 (1) 0 0 0
(iii) AC current gain, 0 1 0 0
~ = Me = (4.7-15)mA = 1.2x 10-3 =120 0 0
M8 (40-30)~A 10xlO-6

R
DC
This circuit carries out by the logic operation
In the linear region of output characteristics ~ AC
of AND gate which can also be verified by
is close to ~DC' (1)
de-Morgan's theorem
50. Transfer characteristics The graph between Vi)
and Vi is called the transfer characteristics of the Z=X+Y

SI
base-biased transistor, is shown in figure. =A+B
Cut-off Active
V region i region =A+B=A·B
a I
So, the circuit corresponds to AND gate. (2)
I
I Saturation
__ region
Symbol A
B=D--Z=A.a
(1)

52. = A + B = A· B = AB
IT Z

Refer to Ans. 51. (3)

Transfer characteristic (1)
53.
When the transistor is used in the cut-off or
saturation state. It acts as a switch.
Cut-off Active
Vo = Vcc -IcRc ~ Vi = l8R8 + VBE region region I
H
Transistor as a switch The circuit diagram of v, : :
transistor as a switch is shown in figure. I : Saturation
: __ re-"9'-io_n _
Ie
I
I
I
I
Rc I
O

I
+ I
Va

vcc
Transfer characteristic of
bose-biased transistor (W2)
M

Sase-biased transistor in CE The active region of transfer characteristic curve

configuration (1) operates as an amplifier. (1/2)

As long as Vi is low and unable to forward bias the (i) Refer to Ans. 35 (i). (1/2)
transistor, Vo is high (at Vd. if Vi is high enough (ii) Output resistance The ratio of variation of
to drive the transistor into saturation, then Vo is collector emitter voltage (VCE) and
low, very near to zero. corresponding change in collector current (Me)
When the transistor is not conducting it is said to be when base current remains constant is called
switched off and when it is driven into saturation it
output characteristic curve.
is said to be switched on. This shows that if we
defme low and high states as below and above R out -- (~VCE)
--
certain voltage levels corresponding to cut-off and Me 18 =conSlant
saturation of the transistor, then we can say that a
low input switches the transistor off and a high (ill) Refer to Ans. 35 (i), (ill). (112)
input switches it on. (1)
412 o Chapterwise CBSE Solved Papers PHYSICS

54. For curve, refer Ans. 53. (1) Truth table

The active region of transfer characteristic curve
'Sufsed as an amplifier. (2)
A B

55. , Whenever CE circuit is used as an amplifier the o o

(
j~~~~;f~~;~li~~i~f;r~i;~~~:hr:~ o
o
o
o

R
o
Circuit diagram of a common-emitter amplifier
(112 x 2= 1)
(1'12)
ForG3
Ie
Gate AND gate
Truth table

SI
VeE Ie Output A B G3 = A·B

- Vcc 1 0 0 0

0 0
VBB = 0 0

C\
V
IT
Input (112 x 2 = 1)
~d
AC voltage output
57. (i) G1 : AND gate (ii) G2: NOR gate
(1'1.)
(iii) G3: OR gate. (112 x 3)
Voltage gain It is equal to the ratio of small
Truth table
ch~rige'in 'output voltage at the collector to that of
(tl
change in input voltage, i.e. A B G1 G2 G3
H
Av = Output voltage 0 0 0 1 0
Input voltage : ' 0 1 0 0 1
= ,iVCE = (MdRout = ~AC X 'Rout (1'1.) 1 0 0 0 1
,iVEB ME Rm Rm
1 1 1 0 1
O

=> Voltage gain = ~AC X Rout (1'12)

Bm
58. For figure refer to Ans. 55. (2)
where, ~ AC is AC current gain.
Relationship between input and output signals of
56. For G1 n -p- n transistor amplifier. When positive half
cycle is fed into input circuit, forward bias of
M

Gate NAND gate

emitter base circuit decreases. This lead to
Truth table
decrease IE and by transistor action, collector
current decreases. Since, output voltage,
A B
Vo = VCE - Ie Ru therefore, decrease in collector
current, irIcreases the output voltage. As, the
collector is connected with the negative terminal
of battery Vee, the irIcrease in collector voltage
imply that negatively of collector increases.
Thus, correspondirIg to positive half cycle of input
(112 x 2 = 1) AC, a negative amplified cycle is obtained at
For G2 collector and vice-versa. This shows that output
and input signals are in opposite phase. (1)
Gate NOR gate
CHAPTER 14 : Semiconductor Electronics 473

lc
59. The gates 1 and 2 are NOR gates acting as NOT
gate.
For I and 2,
When A = 0, A = 0, Y = °+ ° 0 = =I
Similarly, B = 0, B = 0, Y =°+ 0= 0 = I (1)
Vee
Logic gate of complete circuit is AND gate. (1)

R
Truth table (1)
Refer to Ans. 3. (2)

60. (i) The base region of the transistor is physically From circuit diagram, we come across to know
located between the emitter and the collector that it is made up of two sections, i.e. input and
region and is made from lightly doped high output. (1)

resistivity material. The emitter and collector
regions are heavily doped. But the doping level
in emitter is slightly greater than that of
collector and the area of collector region is
slightly more than that of emitter. (1)
In term of doping level,
Emitter region> collector region> base
region
IT
In term of area of the region,
Collector region> emitter region> base
region.
The area of the collector region is greater than
that of emitter. This is because the collector
region has to handle more power than the
emitter and also it has to collect more number
H
of charge carriers to constituent the current.
Emitter is heavily doped to provide large
number of majority charge carriers, while base
and collector are lightly doped to accept these
charge carriers from emitter.
O
SI
These two characteristics can be studied as shown
below:
(a) Emitter or Input Characteristics
A graphical relation between the emitter
voltage and the emitter current by keeping
collector voltage constant is called input
characteristics of the transistor.
Adjust collector-emitter voltage at a suitable
high value VCE (say = + 10 V). It is necessary so
as to make the base-collector junction reverse
(1) biased.
Now, with the help of rheostat gradually
increases, the value of base-emitter voltage VBEin
small steps and note the corresponding values of
base current lB' (1)
'B~)
100
VeE=10V
80
(1) 60

(ii) The conditions of a transistor for to be in

40
active state are below:
(a) The input circuit should be forward biased 20
by using a low voltage battery.
(b) The output circuit should be reverse 0.2 VBEM
M

biased by using a high voltage battery. (1)

(ill) CE configuration refer to Ans. 65.
61. (i) Common-emitter Transistor
Characteristics To study the characteristics of
an n-p-n transistor in common-emitter mode,
required circuit is shown in the figure. Here,
base-emitter circuit is forward biased with
battery VBEand emitter- collector circuit is
Input resistance It is defined as the ratio of
(1)
change in base-emitter voltage (L~.vBE)to the
resulting change in the base current (!VB) at
constant collector-emitter voltage (VeE)' It is
reciprocal of slope of IB-VBE curve.
Input resistance, R i = (~BE) = constant
B VCE

reverse biased with battery Vce.

474 o ehapterwise eBSE Solved Papers PHYSICS

(b) Collector or Output Characteristics

A graphical relation between the collector voltage
and collector current by keeping base current
constant is called output characteristics of the Inductive
transistor. To study output characteristics of coupling n-p-n
+
transistor we keep value of base current IB fixed
(say at 10 J.1A) with the help of VBE. Now, gradually

'----l~KJ-
change the value of VCE and note the values of

R
collector current t.. (1)

Plot Ie - VCE graph. Repeat the process for different

constant values of lB' VBB

The output characteristics are as shown below: Circuit diagram of tronsistor as on oscillator

SI
At maximum value of Ie' current through L'
Base current (18)
~ 10 does not change and therefore flux remains
.5:
unchanged and emf in L' and L reduces to zero .
60~
;g 8 /
Now, the discharging of capacitor begins
C
50~ through L. The positivity of upper plate
~ 6 40~ decreases and forward bias decrease, which
'S
o 30~ results in the form of decrease in base current
~ 4 20~ and hence, decrease in collector current. This
.!l1 phenomenon repeats till collector current
(5 10~
o 2
IT reduces to zero and emf in the coil L also
o 2 4 6 8 10 12 14 16 reduces to zero.
Collector to emitter voltage (VcEl in volts
Thus, the time duration in which collector
(ii) Feedback When a portion of the output current grows from zero to maximum, the
power is returned back to the input in phase current in coil L of tank circuit complete its half
this is termed as positive feedback. (1) cycle. The duration in which collector current
reduces from maximum to zero, the current in L'
H
Input
'r=--i Transistor I completes its next half cycle.
I r-i amplifier II---------.-~ Output
Ie I
Collectorl'---+--J(--.......;--+-
'----------11 Feedback U current
I network ~
O

in L'

Feedback network The phenomenon of mutual

inductance is used to take a part of output in coil
(L') back into input coil (L). Current in coil f---+--+---I-,---t--
When the switch K is closed, collector current L of input
M

circuit t-
begin to flow through L', which in turn increases
the magnetic flux linked with L' and hence with L. Rise and fall of currents
This leads to produce an induce emf in L, which
The frequency of oscillation is given by
increases the forward bias. This also increases the
base current and hence collector current along with 1
V=---
the charging of capacitor takes place with upper 2rc.JLC
plate as positive. Thus, the AC of desired frequency and
This phenomenon is repeated again and again till amplitude can be obtained by taking appropriate
the collector current reaches to its maximum value. value of inductance, capacitance and strength of
battery B. (1)
CHAPTER 14 : Semiconductor Electronics 475

62. (i) In this transistor, the emitter-base junction is
forward biased and its resistance is very low. So,
the voltage of VEE is quite small. (1)
The collector-base junction is reverse biased. The
resistance of this junction is very high. So, the
63. (i) Thin and lightly doped base region contains a
smaller number of majority charge carriers,
reducing rate of recombination resulting small
Is and collector current almost equal to 1£
resulting large voltage and power gain. (1)

voltage 'of Vee (VeB) is quite large ('" 45 V). (ii) Refer to Am. 61 (i). (1)
Electrons in emitter are repelled towards base by (iii) Refer to Ans. 68 (i). (3)
negative potential of VEE on emitter, resulting
64. X ~ Amplifier, Y ~ Feedback network

emitter current 1£.
The base being thin and lightly doped has low
density of holes, thus when electrons enter the
base region, then only a few holes get
neutralised by electron hole combination,
resulting in base current (Is). The remaining
R
(1)
Transistor as an oscillator: In an oscillator, the
output at a desired frequency is obtained without
applying any external input voltage. The common
emitter n - p - n transistor as an oscillator is shown in
the following figure. A variable capacitor C of

SI
suitable range is connected in parallel to coil L to
electrons pass over to the collector, due to high give the variation in frequency. (1)
positive potential of collector, resulting in
collector current (I cl .
As, one electron reaches to collector. it gets
neutralised by the flow of one electron from the
negative terminal of the battery Vee to collector
through connecting wire. Then, one electron
flow from negative terminal of battcry Vce to
IT
positive terminal of battery VEE and one electron
flow from negative terminal of VEE to emitter. (1)
When the electron coming from emitter (1)
combines with the holes in base, then deficiency
of hole in the base is compensated by the
breaking of covalent bond there. The electron, so f- .--:f-:::Output
released flows to the positive terminal of battery
H
VEE, through connecting wire.
Thus, in n-p-n transistor, the current is carried
inside as well as in external circuit by the (1)

electrons. Thus, in this case also, Oscillator action

O

1£ = Is + I e [Kirchhoff's first law] As in an amplifier, the base-emitter junction is

In the base, IE and Ie flow in opposite direction. (1) forward biased while the base collector junction is
reverse biased. When the switch S is put on, a surge
p-base
of collector, current flows in the coil T2. The
n-emitter region n-collector
,
, , .,-----'--, , inductive coupling between coil T2 and Ii cause a

---:::::.e -
:-- ------ current to flow in the emitter circuit i.e., feedback
M

~n
------ :--i:= ---
___ --.-0 ------ nL
from input to output. As a result of positive
feedback, the collector current reaches at
maximum. When there will be no further feedback

--VEB
--- - B
---
VCB-.-- ic
from T2 to Ii, the emitter current begins to fall and
collector current decreases. Therefore, the transistor
has reverted back to its original state. The whole
18 process now repeats itself.The resonance frequency
-.1
1
+ -1111:+
(f) of the oscillator is given by
IE lc 1=_1_
VEE vcc
Flow of charge carriers in n-p-n transistor
21tfLC (2)

The tank of tuned circuit is connected in the

(ii) Refer to Ans. 61. (1) oscillator side. Hence, it is known as tuned collector
oscillator.
476 o Chopterwise CBSE Solved Papers PHYSICS

65. While finding gain for CE configuration we Current amplification factor (J3Ad is the ratio
should mind that it will depend upon the load of change in collector current (Md to the change
resistance, input resistance as well as output will is based current (M B) at constant collector
be inverted. voltage, i.e.
For circuit diagram refer to Ans. 55. (1)
.• ~AC = Me I
Working In the circuit, emitter is forward MB VCE = constant (1)
biased and collector is reversed biased. This
makes input resistance (R;n) very low and output Output characteristics represent the variation of

R
resistance (Rout) high. During the positive half t c with Ve' keeping 18 constant.
cycle of input AC decrease the forward bias.
Hence, emitter current, IE and by transistor
--------~_r_--- la = 400 mA
action collector current decreases. This tend to .-...&.---- la = 300 mA
increase the collector voltage which is given

SI
by Vo = VCE = Vcc - IeRL
__
-r--- le
= 200 mA

The high value of RL produces large change ill Vo la=100mA

corresponding to low change in Vi' Thus,
amplified pulse is obtained at collector. (1)

Voltage gain It is equal to the ratio of change

in output voltage (VeE) corresponding to the
change in input voltage (~VBE)' i.e. Vc(volt) - (1)

Voltage gain, Av = ~VCE ,;, (Md RL From above graph at Ve = V, the value of collector
IT
~VBE (M8) Vi current increases with the increase in the base
current, lB' Thus,
where, RL and R, are output resistances (load
resistance) and input resistance of transistor
respectively. (1)
~AC = Me I [AC current gain]
M B vCE = constant

AV=(Me)RL =~AeRL (U) Transfer characteristics curve for a base-biased

ri ri
H
M8 transistor in CE configuration.
Cut-off
where, ~Ae is AC current gain = Me Active
M8 region
(112) region Saturation
The output voltage of CE amplifier differ in phase region
O

from the input voltage by 180 or n rad. The

0

opposite phase is represented by negative sign. (1)

.. Voltage gain = - ~Ae RL

ri (112)

66. (i) The circuit is as shown below:

M

'------'-------'----_ Vi
Ra
c Rc (2)

B Hence, low input give high output and high input

+
/' Vo gives low output.
te
67. (i) For curve refer to Ans. 53, CE amplifier circuit
VBB vcc Ans.55. (2)
The active region of a transfer characteristics
curve can be used to explain the transistor as
an amplifier.
(1)
CHAPTER 14 : Semiconductor Electronics 477

The resistance of output circuit is large being 69. (i) Refer to Ans. 66 (ii), 28. (3)
in reverse bias and resistance of input circuit (ii) Refer to Ans. 35 (i), (ii). (2)
is low being in forward bias.
70. (i) Refer to Ans. 57. (3)
When input voltage, VBE comes in active
region, Ie flows in output and Vo varies (ii) For circuit refer to Ans. 51. (1)

significantly as Vo = VCE = Vcc - IeRL Working of n-p-n transistor as CE

This change in output voltage is obtained as amplifier In the circuit, output resistance is
amplified form. (1) very high whereas input resistance is very low

(ii) NAND gates are termed as universal gates
because all three basic gates namely AND, OR
and NOT can be made using NAND gate.
The given circuit perform the logic operations
R
being reverse and forward bias, respectively.
When current, Ie grows in output circuit,
(1)
potential difference across the collector
decreases significantly as per relation

SI
of AND gate as Y = (A·B) = A·B (1) Vo ;= VCE = Vcc - IeRL
When input voltage is fed into input circuit, VEB
68. (i) For n-p- n transistor in CE configuration circuit
changes, which in turn change IB and IE' By
diagram.
transistor action, Ie change and thus, output
Refer to Ans. 66 (ii). (1)
voltage changes in amplified manner. (1)
For transfer characteristic curve Refer to
Ans.28. (2)
71. n -p- n transistor in CB configuration Since,
the base is common in input and output circuits,
(ii) (a) The output resistance (ro)
therefore transistor is connected in CB
_ (L'l.VCE) configuration.
IT
Me Is = constant h
o--..,---{/}---,-=-T
From the given graph, at IB = 60~,
VCE = 2V, VCE = 16 V
Collector current changes from 8 mA to
Input =}
r B
,=} Output
VSE
8.5 mA,
Is
=vcc
H
i.e. L'l.VCE =16 - 2=14 V VSS
Me = 8.5 - 8 = 0.5 mA = 5 x 10-4 A
1
(2%)

.. ro =(:~t=60~ sx1:0-4 Working When input voltage, VBE is sufficient

O

to make flow of emitter current, collector current

ro = 2.8 x 104 n flows in output circuit. In this condition, the
ro = 28 kn (1) circuit is said to be in active state.
(b) The current amplification factor,
The small change in VEB, produces sufficient
~AC= (Me) change in emitter current and hence, in collector
current. The input circuit offers very small
MB
M

VCE = constant
resistance as ample change in emitter current
At VCE = 2 V, IB = 10 ~ to 60 ~ occurs corresponding to small change in input
.. MB=(60-1O)=50~ voltage.
Ie changes from 1.5 mA to 8 mA This lead to produce large change in output
.. Me=8-1·.5=6.5mA voltage in spite of smaller change in collector
current (IE < Id. This shows that output circuit
=> ~ =(Me)
AC M
6.5x 10- A
50x 10 6 A
3

offer high resistance. (2%)

B VCE

6.5 X 103 2
~AC= =1.3xlO=>~Ac=130
50 (1)
 478
72. Refer to (first part)
VBB
V
Input
ACvoltage
n-p-n transistor as a common emitter amplifier
(H) Second part 66 (ii).
Value Based Questions (From Complete Chapter)
o 4 Marks Questions
IT
1. Meeta's father was driving her to the
school. At the traffic signal she noticed
that each traffic light was made of many
tiny lights instead of a single bulb. When
Meeta asked this question to her father,
H
he explained the reason for this.
Answer the following questions based on
above information:
(i) What were the values displayed by
O
Meeta and her father? ' house. When he pointed out his anxiety
(ii) What answer did Meeta's father
give?
(iii) What are the tiny lights in traffic
signals called and how do these
M
operate? Deihl 2016
Ans. (i) Values displayed by Meeta, are curiosity to
learn and good observation. Values displayed
by her father are patience and
knowledgeable.
(ii) Meeta's father most probably explained her
the benefits of using tiny bulbs (LEOs) over a
single bulb.
(a) Tiny lights are semiconductor devices
which consume very less power than a
single bulb.
(b) Tiny lights are very cheap.
o Chapterwise CBSE Solved Papers PHYSICS
RL I
Ie Vo
R
=-
~
SI
~
(5)
(c) If some of these tiny lights are not
working, then traffic system will not be
affected. But if a single bulb is fused,
traffic system will be disturbed. (2)
(Hi) Tiny lights in traffic signals are called LEOs.
LEOs are operated in forward biasing and emits
spontaneous radiation. (1)
2. Ameen had been getting huge electricity bill
for the past few months. He was upset
about this. One day his friend Rohit, an
electrical engineer by profession, visited his
about this to Rohit, his friend found that
Ameen was using traditional incandescent
lamps and using old fashioned air
conditioner. In addition there was no proper
earthing in the house. Rohit advised him to
use CFL bulbs of 28 W instead of
lOOOW-200Vand also advised him to get
proper earthing in the house. He made
(1)
some useful suggestion and asked him to
spread this message to his friends also.
(i) What qualities/values, in your opinion
did Rohit possess?
(ii) Why CFLs and LEDs are better than
traditional incandescent lamps?
(iii) In what way earthing reduces
electricity bill? oelhl2015C
 CHAPTER 14 : Semiconductor Electronics 479

Ans. (i) Being an engineer, Rohit was well awared 4. Ashwin was given 3 semiconductors A, B
about energy saving and use of modern and C with respective band gaps of 3 eV,
technology. (1) 2 eV and 1 eV for use in a photodetector to
(ii) CFLs and LEOs consumes less power in detect A = 1400nm. He found that the
comparison of traditional incandescent lamp photodetector was not working with these
and also give more light and it can save upto semiconductors and did not know why? His
85% on energy bill. (1)
friend Akash found out the reason for it
(iii) The earth wire acts as negative terminal. The and explained it to him.

flowing current from positive cable to earth
grounding will not be counted by electric
meter because it does not pass the negative
cable. In this way, you can reduce the
electricity bill and save your money.
R
Read the above passage and answer the
following questions.
(i) Why did the photodetector not work?
(2) (ii) What according to you are the values

SI
3. Kritika Singh was enjoying TV shown by Akash?
programme at her home with her Ans. Energy related to wavelength A is
younger brother Sorya at night. 34 8
E = he = 6.634x 10- x 3x 10 =1.42 x 1O.-19J
Suddenly, the light went off causing A 1400x 10 9
darkness all over. Sorya asked her to 19
E _1.42 X 10- = 0.88 eV [:. 1 eV = 1.6 x 10-19J]
bring candle along with matchstick to 1.6x 10 19 .
put the TV switch off. Kritika at once
(i) The photodetector does not work because the
picked the mobile phone and pressed the
IT energy related to wavelength, 0.88 eV is less
button lighting up the surrounding. Her than band gaps of semiconductors A, Band C.
younger brother was surprised and (2)
asked, where the light was coming. (ii) The values of Akash are
Kritika proudly showed her mobile. (a) helping attitude.
Read the above passage and answer the (b) presence of mind.
H
following questions. (c) high degree of awareness.
(i) Which value is displayed by (d) concern for his friend, kindness. (2)

Kritika? 5. Garima and Gaurav want to purchase a

(ii) Name the material used in the new TV set. They visited electronic shops to
formation of LED. look for some branded TV. The dealer
O

(iii) LED works, in which biasing? showed them LCD and LED TV's. Now,
Ans. (i) Kritika is a creative and intelligent girl. She they were confused which set to buy.
has good knowledge of Physics. Finally, after discussing with friends,
(ii) The semiconductor material is used in the reading relevant literature and searching
formation of LED e.g. Ga, As, P. the internet, they decided to purchase LED.
M

(iii) LED works in forward biasing i.e. n-type is (i) Which value is being highlighted by
connected with negative terminal of the Garima and Gaurav?
battery and p-type is connected with positive (ii) What is the difference between LED
terminal of the battery. and LCD?
Ans. (i) Interpretation skill application skill. analytical
thinking is being highlighted by both. (1)
(4)
(ii) LED stands for Light Emitting Diode. LED is a
Light Emitting Diode (LED) Specially semiconductor diode. Whereas, LCD stands for
designed diodes, which give out light Liquid Crystal Displays. LCDs came as a
radiations when forward biased. LED's are replacement technology for large and heavy
made of GaAsP, GaP etc. cathode ray tubes.
480
LCD is a devices, which consists of several parts,
whereas an LED is a single component device. LCD
is only used as a display device, whereas LED are
used in various other applications such as flashlights
and indicators. LEDs are capable of producing light
whereas liquid crystals cannot produce light. LED
displays consume less power in general than the
same sized LCDs.
LED displays can produce more brightness and
contrast than the counter part LCD displays.
6. Gautam went for a vacation to the village
SI
where his grandmother lived. His
grandmother took him to watch 'nautanki' one
evening. They noticed a blackbox connected to
the mike lying nearby. Gautam's grandmother
did not know what that box was. When she
asked this question to Gautam, he explained
to her that it was an amplifier.
(i) Which values were displayed by the
IT
grandmother? How can inculcation of
these values in students be promoted?
(ii) What is the function of an amplifier?
(iii) Which basic electronic device is used in
the amplifier?
H
Ans. (i) The values displayed by Gautam's grandmother are
(a) Curiosity (b) Awareness [2)
The inculcation of these values in students can be
promoted by positive mental state, improvement in
motives and healthy supportive environment.
O
(H) The function of an amplifier to increase the
amplitude of variation of alternating voltage or
current or power.
(Hi) Transistor is the basic electronic device used in the
amplifier.
7. (i) Figure shows the input waveform which
M
is converted by a device 'X' into an output
waveform. Name the device and explain
its working using the proper circuit.
Derive the expression for its voltage gain
and power gain.
(ii) Draw the transfer characteristic of base
biased transistor in CE configuration.
Explain clearly which region of the curve
is used in an amplifier. Delhl2015C
o Chopterwise CBSE Solved Papers PHYSICS
Ans. (i) Device X ~ CE Amplifier
Power gain Ap of the transistor may be
expressed as:
AC power gain (Ap) = Current gain (J3Acl x
Voltage gain (A,,)
Ap = ~;,.C"RL
R
R [2)
As power is always positive, hence power gain
Ap is always positive.
[31
Refer to Ans. 48.
(H) Refer to Ans 50. [2)
8. Sorya usually enjoyed loud music.
One day his music system was not
producing very loud sound. Sorya get
disappointed. He discussed his
problem with his big brother Kamal.
Kamal advised him to connect an
amplifier in series with the amplifier
of sterosystem. This increased the
sound of Sorya music system
considerably.
Read the above passage and answer
the following questions.
(i) Which values is displayed by
Kamal?
(ii) Why the loudness of music
system get increased on
connecting amplifier?
(iii) Give the equation for current
gain in the transistor as an
[1) amplifier.
Ans. (i) Kamal is caring for his younger
[1)
brother, good subject knowledge helps
him to develop application skill.
[1)
(ii) On connecting two amplifiers in series, its
amplification gains get multiplied. Hence
loudness of music system increases. [21
(iii) Current gain in the transistor as an
amplifier is given by ~ AC = M C
MB
where, Mc = change in collector current
M B = change in base current [1)