AO4614B

40V Dual P + N-Channel MOSFET

General Description Product Summary

N-Channel P-Channel
The AO4614B uses advanced trench technology VDS (V) = 40V, -40V
MOSFETs to provide excellent RDS(ON) and low gate ID = 6A (VGS=10V) -5A (VGS=-10V)
charge. The complementary MOSFETs may be used RDS(ON)
in H-bridge, Inverters and other applications. < 30mΩ (VGS=10V) < 45mΩ (VGS= -10V)
< 38mΩ (VGS=4.5V) < 63mΩ (VGS= -4.5V)

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

SOIC-8
D2 D1
Top View Bottom View

Top View

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1 G2 G1
G1 4 5 D1
S2 S1

Pin1 n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 6 -5
Current A TA=70°C ID 5 -4
A
Pulsed Drain Current B IDM 30 -30
B
Avalanche Current IAR 14 -20
Repetitive avalanche energy L=0.1mH B EAR 9.8 20 mJ
TA=25°C 2 2
Power Dissipation PD W
TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s n-ch 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State n-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 35 50 °C/W
Maximum Junction-to-Ambient A t ≤ 10s p-ch 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State p-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 50 °C/W

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AO4614B

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.7 2.5 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 30 A
VGS=10V, ID=6A 24 30
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 36 45 mΩ
VGS=4.5V, ID=5A 30 38
gFS Forward Transconductance VDS=5V, ID=6A 19 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 1 V
IS Maximum Body-Diode Continuous Current 2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 410 516 650 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 82 pF
Crss Reverse Transfer Capacitance 43 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4.6 Ω
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 8.9 10.8 nC
Qg (4.5V) Total Gate Charge VGS=10V, VDS=20V, 4.3 5.6 nC
Qgs Gate Source Charge ID=6A 2.4 nC
Qgd Gate Drain Charge 1.4 nC
tD(on) Turn-On DelayTime 6.4 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=3.3Ω, 3.6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16.2 ns
tf Turn-Off Fall Time 6.6 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 18 24 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 10 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature. 9
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
12
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

40 30
10V
35 5V VDS=5V
25
30 4.5V
20
25
4V
ID (A)

ID(A)
20 15
15
10 125°C
10 VGS=3.5V
25°C
5 5

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

36 1.8

34 VGS=4.5V
Normalized On-Resistance

1.6
32 VGS=10V
1.4 ID=6A
RDS(ON) (mΩ )

30

28 1.2

26 VGS=10V VGS=4.5V
1 ID=5A
24
0.8
22

20 0.6
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

80 100 9
ID=6A 12
70 10

60
1
RDS(ON) (mΩ )

50
IS (A)

125°C 0.1
40 125°C
0.01 25°C
25°C
30
0.001
20

10 0.0001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=20V
8 ID= 6A
600 Ciss

Capacitance (pF)
VGS (Volts)

6
400
4

200 Crss
2 Coss

0 0
0 2 4 6 8 10 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000
TJ(Max)=150°C
10µs TA=25°C
10
100µs 100
Power (W)
ID (Amps)

1 RDS(ON) 1ms
limited 10ms
0.1s 10
0.1 1s
TJ(Max)=150°C 10s
TA=25°C DC
0.01 1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E)
Ambient (Note E)

9
10
12
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=74°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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AO4614B

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID= -250µA, VGS=0V -40 V
VDS= -40V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 -2 -3 V
ID(ON) On state drain current VGS= -10V, VDS= -5V -30 A
VGS= -10V, ID= -5A 36 45
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 52 65 mΩ
VGS= -4.5V, ID= -4A 50 63
gFS Forward Transconductance VDS= -5V, ID= -5A 13 S
VSD Diode Forward Voltage IS= -1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 750 940 1175 pF
Coss Output Capacitance VGS=0V, VDS= -20V, f=1MHz 97 pF
Crss Reverse Transfer Capacitance 72 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 14 Ω
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge 17 22 nC
Qg (-4.5V) Total Gate Charge VGS= -10V, VDS= -20V, 7.9 10 nC
Qgs Gate Source Charge ID= -5A 3.4 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 6.2 ns
tr Turn-On Rise Time VGS= -10V, VDS= -20V, RL=4Ω, 8.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 44.8 ns
tf Turn-Off Fall Time 41.2 ns
trr Body Diode Reverse Recovery Time IF= -5A, dI/dt=100A/µs 21 27 ns
Qrr Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 14 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The value of R θJA isinmeasured
A =25°C. The value any givenwith the device
application mounted
depends onon
the1in FR-4
user's board board
specific with 2oz. Copper,
design. The in a still rating
current air environment with
is based on theT A =25°C.
The value in any a given application
t ≤ 10s thermal resistance rating. depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature. 9
B:
C.Repetitive rating,
The R θJA is pulse
the sum of width limitedimpedence
the thermal by junction from
temperature.
junction to lead R θJL and lead to ambient. 12
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained2 using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
E.
T AThese
=25°C.tests
The are
SOAperformed with the
curve provides devicepulse
a single mounted on. 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
rating
SOA
Rev1curve
: Janprovides
2010 a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 30
-10V VDS=-5V
25 -5V 25
-4V
20 -4.5V 20
-ID (A)

-ID(A)
15 15

VGS=-3.5V
10 10 125°C

5 5 25°C

0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5
-VDS (Volts) -VGS(Volts)
Fig 12: On-Region Characteristics Figure 13: Transfer Characteristics

65 Normalized On-Resistance 1.7

60
1.5 VGS=-10V
VGS=-4.5V ID=-5A
55
RDS(ON) (mΩ )

1.3
50

45 1.1 VGS=-4.5V
ID=-4A
40 VGS=-10V
0.9
35

30 0.7
0 5 10 15 20 -50 -25 0 25 50 75 100 125 150

-ID (A) Temperature (°C)

Figure 14: On-Resistance vs. Drain Current and Figure 15: On-Resistance vs. Junction
Gate Voltage Temperature

130 100 9
ID=-5A 12
10
110

1
RDS(ON) (mΩ )

90 125°C
-IS (A)

0.1
70 125°C
0.01 25°C

50 0.001
25°C

30 0.0001
3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VGS (Volts) -VSD (Volts)

Figure 16: On-Resistance vs. Gate-Source Voltage Figure 17: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4614B

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1400
VDS=-20V
ID= -5A 1200
8 Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
800

4 600

400 Crss
2 Coss
200

0 0
0 3 6 9 12 15 18 0 10 20 30 40
Qg (nC) -VDS (Volts)
Figure 18: Gate-Charge Characteristics Figure 19: Capacitance Characteristics

100 1000
TJ(Max)=150°C
10µs
TA=25°C
10
100µs 100
-ID (Amps)

Power (W)

1 RDS(ON) 1ms
limited 10ms
0.1s 10
0.1 1s
TJ(Max)=150°C 10s
TA=25°C DC
0.01
0.1 1 10 100 1
-VDS (Volts) 0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 20: Maximum Forward Biased Safe
Figure 21: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

9
10 12
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJA=74°C/W
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance

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