ELECTRONICS LECTURE

Electronics Devices and Circuits 3: The Field Effect Transistor (FET)

FET (Unipolar)
Field Effect Transistor
- A FET is a three – terminal Active Junction FET
semiconductor device, where the (JFET)
output current is controlled by an Depletion – mode
electric field generated by the input
voltage.  N – Channel
- It is a VCCS device which means a
voltage controlled, current source
device.

Physical Characteristics of FET

 GATE
- Similar to BASE of BJT  P – Channel

 DRAIN
- Similar to COLLECTOR of BJT

 SOURCE
- Similar to EMITTER of BJT
Metal Oxide Semiconductor FET
PARAMETER BJT FET (MOSFET)
Operation CCCS VCCS
Size Bigger Smaller Depletion – mode
Consumes Consumes
Power
More Less  N – Channel
Gain More Gain Less Gain
Switching Time Slower Fast
Temp. Better Heat
Heat Stability
Dependent Stability
Cost Cheaper Costly

FET is used in digital electronics due to its

 P – Channel
switching time and better heat stability.

Enhancement – mode
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Schematic Symbol
 N – Channel

 P – Channel
N – Channel
- Nakapasok

P – Channel
- Palabas

JFET CONSTRUCTION How does JFET works?

 JFET is normally ON device
 Normally short/closed
 JFET acts as a Resistor
 JFET acts as a Capacitor
 JFET is a constant current source

In order for the depletion region of a JFET

to increase, it needs a VARACTOR device
(a variable capacitor) wherein it works in
Channel reverse bias direction.
- Conductive Part
Substrate
- Located at the Gate

If the JFET is an N – type, its channel is

N – Channel and P – substrate.

JFET VGS VP/VGS(OFF) VDS

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Type Pinch – off V

N - type - - +
+
P - type + -

JFET PARAMETERS

Shockley’s Equation

( )
2
V
I D =I DSS 1− GS
VP
Vp = - VGS (OFF)
Transconductance Equation

gm =
ΔID
Δ I GS |V DS =0

Drain – Source Characteristic Curve

gm =g mo 1−
( V GS
VP )
gmo = the maximum AC gain parameter of
the JFET.

2 I DSS
gmo=
|V P|

Metal – Oxide Semiconductor Field Effect

Transistor (MOSFET)
Vp about the region is + while Vp about - The insulating layer between the gate
VGS is – and channel has resulted in another
name for the device: insulated gate
FET or IGFET.
Transfer Curve from Characteristic
Curve
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DE – MOSFET STRUCTURE
- Depletion mode and Enhancement
mode
- soliD line (for schematic symbol)

Depletion Mode

Schematic Symbols of DE – MOSFET

 N – Channel

 P – Channel
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- Similar to JFET

At VGS = 0V
I D =I DSS

At VGS < 0V
I D < I DSS

Enhancement Mode
- The transistor operates with VGS>
0V, and ID increases above IDSS

At VGS > 0V
I D > I DSS

D – MOSFET PARAMETERS

Shockley’s Equation

( )
2
V GS
I D =I DSS 1−
VP

VGS VGS
MOSFET
Depletion Enhancement
Type
mode mode
N - type - +
P - type + -

Transconductance Equation
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gm =
ΔID
Δ I GS |
V DS =0
 P – Channel

(
gm =g mo 1−
V GS
VP )
E – MOSFET (Normally OFF device)
- The transfer curve is not defined by
Shockley’s equation. E – MOSFET PARAMETERS
- The drain current is now cut off until
the gate – to – source voltage reaches 2
I D =k ( V GS −V GS (TH ) )
a specific magnitude.
k
= 0.3
mA/V2
VGS(TH) =
threshold
voltage

gm =|2 k (V GS −V GS (TH ))|

E – MOSFET Structure

Schematic Symbols (brokEn)

 N – Channel

VGS VGS
MOSFET
VP Depletion Enhancement
Type
mode mode
N - type - - +
P - type + + -
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Self – Bias
FET Biasing

Fixed Bias

V GS=V G
Voltage – Divider Bias

V GS=−V S
I D =I S
Self – Bias: Midpoint Bias
Midpoint biasing
V D=V DD−I D R D
- It is usually desirable to bias a JFET
near the midpoint of its transfer
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characteristic curve where ID=0.5 IDSS

when VGS = VGS(OFF)/3.4

I D =0.5 I DSS

V GS ( OFF)
V GS=
3.4