Sensor Review

Graphene film development on flexible substrate using a new technique: temperature dependency of gauge
factor for graphene-based strain sensors
SahourSayed, MohammedGamil, AhmedFath El-Bab, KoichiNakamura, ToshiyukiTsuchiya, OsamuTabata, AhmedAbd El-
Moneim,
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El-Moneim, (2016) "Graphene film development on flexible substrate using a new technique: temperature dependency of
gauge factor for graphene-based strain sensors", Sensor Review, Vol. 36 Issue: 2, pp.140-147, https://doi.org/10.1108/
SR-07-2015-0114
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 Graphene film development on flexible
substrate using a new technique: temperature
dependency of gauge factor for
graphene-based strain sensors
Sahour Sayed and Mohammed Gamil
Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology, Alexandria, Egypt
Ahmed Fath El-Bab
Department of Mechanical Engineering, Faculty of Engineering, Assiut University, Assiut, Egypt
Koichi Nakamura
Center for the Promotion of Interdisciplinary Education and Research, Kyoto University, Kyoto, Japan
Toshiyuki Tsuchiya
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Department of Micro Engineering, Kyoto University, Kyoto, Japan

Osamu Tabata
Graduate School of Engineering, Department of Micro Engineering, Kyoto University, Kyoto, Japan, and
Ahmed Abd El-Moneim
Department of Materials Science and Engineering, Egypt-Japan University of Science and Technology, Alexandria, Egypt
Abstract
Purpose – The purpose of this paper is to develop a new simple technique to synthesize graphene film on a flexible polyethylene terephthalate (PET)
substrate and applied as a strain sensor.
Design/methodology/approach – Graphene film was synthesized using laser treatment of graphene oxide (GO) film deposited on PET substrate.
A universal laser system was used to simultaneously reduce and pattern the GO film into laser reduced graphene oxide (LRGO) film.
Findings – The laser treatment synthesizes a multilayer graphene film with overlapped flakes, which shows structure integrity, mechanical flexibility
and electrical conductivity of 1,330 S/m. The developed LRGO/PET film was used to fabricate a high sensitivity strain sensor. The sensitivity and
temperature dependency of its gauge factor (GF) was examined at applied strains up to 0.25 per cent and operating temperatures up to 80°C. The
fabricated sensor shows stable GF of approximately 78 up to 60°C with standard error of the mean not exceeding approximately ⫾ 0.2.
Originality/value – The proposed method offers a new simple and productive technique of fabricating large-scale graphene-based flexible devices at a
low cost.
Keywords Gauge factor, Graphene synthesis, Laser treatment, Strain sensor
Paper type Research paper

1. Introduction sensitive strain gauges such as doped silicon and nano-carbon

materials, e.g. graphene and carbon nanotubes (CNTs), with
Strain detection plays an important role in engineering
their attractive piezoresistive properties (Geim, 2009).
applications. The use of strain gauges is the most common
Nowadays, graphene has attracted a great interest in a wide
way to detect dimensional changes in large structures and
range of applications because of its exceptional electrical and
delicate electronic applications. The sensitivity of strain gauge
mechanical properties as well as high thermal stability. Also its
is determined in terms of its gauge factor (GF), which could
planar structure is an important merit which makes it compatible
be simply defined as the ratio of relative change in electrical
with microfabrication techniques. The unique monocrystalline
resistance to the applied mechanical strain. Different novel
planar structure with covalent carbon/carbon ␴-bonds is
and smart materials with high GF have been used to produce
responsible for fast electron mobility, ultra-high modulus of
elasticity and negligible internal mechanical hysteresis (Bolotin
et al., 2008; Poot and van der Zant, 2008; Wang et al., 2008).
The current issue and full text archive of this journal is available on
Emerald Insight at: www.emeraldinsight.com/0260-2288.htm Many techniques are used to synthesize graphene such as
mechanical exfoliation, chemical vapor deposition (CVD), and

Sensor Review Received 14 July 2015

36/2 (2016) 140 –147 Revised 20 September 2015
© Emerald Group Publishing Limited [ISSN 0260-2288] 26 October 2015
[DOI 10.1108/SR-07-2015-0114] Accepted 27 October 2015

140
 Graphene film development on flexible substrate Sensor Review
Sahour Sayed et al. Volume 36 · Number 2 · 2016 · 140 –147

reduction of chemically exfoliated graphene oxide (GO) using
reducing agents like hydrazine, etc. (Chang et al., 2012; Hummers
and Offeman, 1958; Li et al., 2009; Stankovich et al., 2007; Yu et al.,
2008a, 2008b; Zhao et al., 2010).
So far, many researchers have developed graphene-based
strain gauges and reported their GFs. Zheng et al. (2013) stated
that the GF of mechanically exfoliated graphene on Si/SiO2
substrate ranges from 10 to 15, depending on its number of
layers, but their production method was time-consuming and
produced graphene at low yields. Lee et al. (2010) reported that
the GF of graphene grown by chemical vapor deposition (CVD)
on a copper film deposited on Si/SiO2 substrate is 6.1. On the
other hand, Fu et al. (2011) measured a GF of 151 for monolayer
graphene prepared by CVD and then transferred to
polydimethylsiloxane (PDMS) substrate. In a similar research
(Gamil et al., 2014a, 2014b), a higher GF of 255 was measured
for monolayer graphene film grown by CVD on a copper foil and
then transferred to Si/SiO2 substrate. Furthermore, many
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analyzed. Finally, the strain sensing mechanism was discussed
in terms of LRGO film microstructure.
2. Experiment
2.1 Graphene oxide synthesis
Graphite oxide was prepared using the modified Hummer’s
method from graphite powder by oxidation with NaNO3, H2SO4
and KMnO4 in an ice bath (Hummers and Offeman, 1958; Zhao
et al., 2010). A suspension of graphene oxide (GO) sheets was
obtained by sonication of the prepared graphite oxide powder in
distilled water (5 mg/mL) for 2 h, followed by mild centrifugation
at 5,000 rpm for 30 min to remove non-exfoliated materials,
leading to a brownish color solution of exfoliated GO sheets with
a final concentration of 3.7 mg/mL, as determined from the
residual weight of the dried aliquot.
2.2 Device fabrication

investigations have been conducted to increase the sensitivity of The graphene-based strain sensor fabrication process consists of
graphene-based strain sensors using various techniques which four main stages as shown in Figures 1(a-d). First (Figure 1(a)),
the GO precursor solution was drop casted at 20°C on the
depend on different structures and mechanisms such as structure
flexible PET square substrate with 10-cm edge length and 100
deformation (Jin et al., 2009; Yu et al., 2008a, 2008b),
overlapped graphene sheets (Hempel et al., 2012; Kim et al.,
2011) and tunneling effect between neighboring graphene Figure 1 Fabrication processes of the flexible LRGO/PET strain sensor
islands (Zhao et al., 2012).
Despite the fact that CVD technique provides monolayer
graphene film with high GF, but the subsequent complicated
transferring and pattering techniques of this film make the
batch fabrication of graphene-based devices not feasible.
Therefore, there is a need for simple fabrication technology
which avoids the use of harsh chemicals, high synthesis
temperature and well suites the batch fabrication of
graphene-based strain sensors.
On the other hand, merging the flexibility with devices has
recently become a great challenge for researchers trying to
develop flexible micro-devices. In this regard, the excellent
flexibility of graphene comes in handy when aiming to produce a (a)
whole new class of state-of-the-art devices for many industrial
Laser beam
applications. As a result, some attempts have been made to
achieve that goal. Strong et al. (2012) used laser source of DVD
drive to reduce graphene oxide deposited on a polyethylene
terephthalate (PET) substrate to fabricate flexible sensors. (b)
Although this process is quite simple, but the produced graphene
Connecting pads
has insufficient quality due to incomplete reduction, as a
consequence of the small laser power of the DVD drive. Also, Gamil
et al. (2014a, 2014b) have recently synthesized a reduced graphene
oxide film on PET substrate using high-power CO2 laser and used
it as a strain sensor. The fabricated sensor showed a GF of 61.5 at (c)
applied strains up to 0.05 per cent at room temperature. Copper wires
In the present study, a universal laser system was utilized to
pattern and reduce a drop-casted GO film on a flexible PET
substrate into laser reduced graphene oxide (LRGO) film. By
utilizing this technique, any special preparations or
adjustments for the samples were avoided, thus allowing the (d)
fabrication of a flexible and sensitive strain sensor with a
simple and low-cost technique. The sensitivity and stability of Notes: (a) Drop-casting of GO solution on
the developed LRGO/PET strain sensor were tested at applied PET substrate; (b) simultaneous reduction
strains up to 0.25 per cent and under operating temperatures and patterning for GO film by Laser beam;
up to 80°C. Furthermore, the effectiveness of laser reduction (c) deposition of silver connecting pads by
technique on the properties of the synthesized graphene was thermal evaporation; (d)wire bonding process

141
 Graphene film development on flexible substrate
Sahour Sayed et al.
␮m in thickness (Figure 1(a)). The spreaded GO solution was
left to dry for 48 h in air at room temperature. Then in the second
step (Figure 1(b)), the dried GO film was simultaneously
reduced and patterned into graphene rectangular strips (5 ⫻ 10
mm) using a CO2 laser beam, with wavelength of 10.6 ␮m and
diameter of 70 ␮m, generated from a universal laser printing
machine (model: Universal Laser Systems VLS2.30) with a focal
length of 50 mm. The desired shape was reduced and patterned
with a resolution of 1,000 pulses per inch and speed of 25.4
mm/s. The used laser power for this process was 2 W with an
average reduction time of 30 s. The laser processing parameters
were optimized after several experimental trials to give the best
results concerning graphene film quality and properties. For
instance, the higher power damages the GO film and the PET
substrate, while lower values only produce a partially reduced
graphene film with undesired properties. In the third step (Figure
1(c)), silver connecting pads were deposited through a stencil
mask onto the LRGO strip ends by thermal evaporation
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(Edwards Auto 306A Vacuum Coating system). Finally (Figure
1(d)), copper wires were bonded to the connecting pads for
electrical resistance measurement.
2.3 Characterization of LRGO film
To assess the efficiency of the reduction process and the
quality of LRGO film, the thickness, electrical conductivity,
structure and morphology of the deposited GO and LRGO
films were characterized using 3D laser scanning microscope
(KEYENCE VK-X200), four-probe technique (Pro4,
LUCAS LABS), Fourier transform infrared spectroscopy
(FTIR) (BRUKER VERTEX 70), X-ray diffraction (XRD)
(SHIMADZU XRD-6100), Raman spectroscopy (HORIBA
Jobin Yvon LabRAM HR-800 SSM) and scanning electron
microscopy (SEM) (JEOL JSM-6010 LV).
2.4 Gauge factor measurement
2.4.1 Test rig preparation.
To measure the GF of the fabricated LRGO/PET device, test
rig consisting of rigid frame, trapezoidal steel cantilever beam,
fine pitch power screw and four commercial strain gauges, was
utilized, as shown in Figure 2. A 350-⍀ four commercial strain
gauges with GF of 2.1 were used to represent the resistances
Figure 2 Schematic representation of the used test rig to estimate
the GF of the LRGO/PET strain sensor
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Sensor Review
Volume 36 · Number 2 · 2016 · 140 –147
in a full Wheatstone bridge circuit. These strain gauges were
glued on the cantilever beam to measure the axial strain at
different applied loads. Power screw with 1.25-mm pitch was
used to apply different loads on a cantilever beam with 1-mm
thickness. The trapezoidal beam was used to have a uniform
uniaxial stress distribution inside the beam (Chen et al.,
2011). Finally, the LRGO/PET sensor was fixed on the top
surface of the cantilever beam at the same distance from the
fixed end and the commercial strain gauges to ensure receiving
the same axial strain as the strain gauges. The change in the
electrical resistance because of the different applied strains
was recorded to determine the GF.
The effect of operating temperature on the stability of GF
was studied up to 80°C. The test rig was placed inside a
furnace, while the connecting wires (terminals) were kept
outside it, as shown in Figure 2.
3. Results and discussion
3.1 Characterization of LRGO film
A 3D laser microscope image for the deposited LRGO film on
the PET substrate is presented in Figure 3. The image shows the
formation of a rough, cracks-free film with an average thickness of 3
␮m. This reflects that the fast laser treatment of GO film allows
maintaining the structural integrity of the parent GO film.
Figures 4(a-c) show SEM images of the LRGO film at
various magnifications. The image in Figure 4(a) presents a
clear transformation of the prepared non-conductive GO film
with dark contrast (lower part) into patterned conductive LRGO
film with bright contrast (upper part). Figures 4(b and c) clearly
illustrate the existence of overlapped flakes structure in the
LRGO film. The overlapped flakes connect together through
electrostatic forces (Van der Waals forces) to form a
continuous and conductive network (Koenig et al., 2011).
To estimate the efficiency of the laser reduction process,
XRD, SEM, FTIR, Raman spectroscopy and conductivity
measurements were conducted. Figure 5 shows the XRD
patterns of graphite powder (Curve a), GO (Curve b) and
LRGO (Curve c) films. Typical intense peak at 26.4° with an
estimated interlayer distance of 3.38 Å is identified for
graphite powder, as shown in Figure 5 (curve a). This
interlayer distance expands to 8.14 Å upon the oxidation of
Figure 3 Thickness of the LRGO film on PET substrate using 3D
scanning laser microscopy
 Graphene film development on flexible substrate
Sahour Sayed et al.
Figure 4 SEM images of LRGO film at various magnifications: (a)
border line between LRGO and dark GO films; (b) overlapped LRGO
flakes structure; (c) integrated network of multilayer LRGO flakes
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graphite to graphene oxide by the modified Hummer’s
method, as shown in Figure 5 (curve b). By applying the laser
beam on the GO film, a characteristic halo peak of amorphous
carbon is detected at 25.9° with interlayer distance of 3.43 Å,
as revealed in Figure 5 (curve c). This reduction in interlayer
distance reflects the successful removal of oxygen functional
groups and water molecules from the interlayer spacing of the
GO film upon laser reduction process.
Figure 6 shows the FTIR spectra of graphite (Curve a), GO
(Curve b) and LRGO (Curve c). Graphite spectrum shows the
absorption band of (O–H) group at 3,400 cm⫺1, while the
peak located at 1,600 cm⫺1 is attributed to unoxidized
graphitic domains and skeletal vibration of C⫽C bonds. The
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Sensor Review
Volume 36 · Number 2 · 2016 · 140 –147
Figure 5 XRD patterns for graphite (Curve a), GO (Curve b) and
LRGO (Curve c)
Figure 6 FTIR spectra for graphite (Curve a), GO (Curve b) and
LRGO (Curve c)
FTIR spectrum of GO shows the existence of different
functional groups because of the chemical exfoliation process
of graphite using strong oxidizers by means of modified
Hummer’s method. The (O–H) group absorption causes
broad and intense peak at 3,400 cm⫺1, and the (C⫽O) group
gives another peak at 1,720 cm⫺1. Also stretching vibration
peaks because of various deformations are observed at 1,220
and 1,060 cm⫺1 because of (C–OH) and (C–O) groups;
respectively. The formation of hydroxyl, carboxylic and alkoxy
groups can explain the recorded expansion in the typical
interlayer distance of the starting bulk graphite after oxidizing
it to GO, as observed in Figure 5. On the other hand, the
FTIR spectrum for LRGO indicates that the exposure to the
laser irradiation removes (C⫽O), (C–OH) and (C–O) groups,
while (O–H) stretching vibrations observed at 3,400 cm⫺1 is
significantly decreased because of deoxygenation and
carbon-carbon bonding is simultaneously restored. The
remnants of hydroxyl groups were reported to be related to
water molecules intercalated among graphene layers (Li et al.,
2007; Wojtoniszak et al., 2012).
 Graphene film development on flexible substrate
Sahour Sayed et al.
Figure 7 Raman spectra for GO (Curve a) and LRGO (Curve b) films
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Figure 7 shows Raman spectra for the synthesized GO (Curve
a) and LRGO (Curve b) films. The characterizing peaks of
GO film are the D-band at 1,345 cm⫺1 and the G-band at
1,600 cm⫺1. For LRGO film, three predominant peaks could
be noticed in Raman spectrum (Curve b), the 2D-band at
2,700 cm⫺1, G-band at 1,580 cm⫺1 and the D-band at 1,350
cm⫺1.
The G-band and the 2D-band are characteristic of the
sp2-hybridized carbon-carbon bonds in graphene (Ferrari et al.,
2006; Gupta et al., 2006; Mattevi et al., 2009; Ni et al., 2008;
Pimenta et al., 2007). The 2D-band is the second-order Raman
feature of the D-band and originates from a double-resonance
process (Ferrari and Robertson, 2000). The presence of the
D-band (at 1,350 cm⫺1) indicates the presence of structural
imperfections or disorder induced by the attachment of oxygen
functional groups on the carbon basal plane (Mattevi et al.,
2009). This band usually disappears in highly ordered graphene
layers. On the other hand, both I(2D)/I(G) and I(G)/I(D) ratios
are widely used to provide structural information of the GO with
different degree of reduction. A higher I(2D)/I(G) ratio, as well as
increased intensity and decreased width of the 2D-band, is
commonly used to indicate the restoration of sp2-hybridized
carbon-carbon bonds in graphitic structures and the presence of a
fewer number of graphene layers (Chieu et al., 1982). Meanwhile, a
lower I(G)/I(D) ratio is related to the presence of more disordered
carbon and/or functionalities attached to the graphene sheets.
Table I summarizes the values of the calculated I(2D)/I(G)
and I(G)/I(D) ratios for GO and LRGO films. To correlate
the effects of the structural changes and the restoration degree
of sp2 carbon network structure on the recovery of the
electrical properties of GO film (obtained upon the laser
reduction process), the electrical conductivities of the GO and
LRGO films were measured using four-probe technique, and
the obtained values are compiled in Table I.
Table I I(2D)/I(G), I(G)/I(D) ratios and electrical conductivity for GO
and LRGO films
Film type I(2D)/I(G) I(G)/I(D) Electrical conductivity (S/m)
GO 0.065 1.02 9 ⫻ 10⫺2
LRGO 0.74 1.54 1.33 ⫻ 103
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Volume 36 · Number 2 · 2016 · 140 –147
Table I shows that the laser treatment of the GO film renders
higher values of I(2D)/I(G) and I(G)/I(D) ratios for LRGO
film than those for GO film. Besides, it confirms the
multilayer, disorder and defective nature of LRGO film. In
correlation with the previous facts, the GO film shows a very
low electrical conductivity (9 ⫻ 10⫺2 S/m), while the
application of suitable laser power makes the film electrically
active by increasing its conductivity in five orders of
magnitude to reach 1.33 ⫻ 103 S/m. This likely means that the
removal of oxygen-containing functional groups from the GO
film with the laser reduction process leads to an efficient
recovery of the sp2 network structure, which subsequently
enhances the conductivity among the graphitic domains. On
the other hand, Vallés et al. (2012) reported that the I(2D)/
I(G), I(G)/I(D) and the electrical conductivity values obtained
for hydrazine reduced GO film were 0.183, 1.4 and 1.75 ⫻
102 S/m, respectively. These values are much lower than those
measured for the LRGO film presented in this study, as
illustrated in Table I. Therefore, the treatment with laser
power presents a highly efficient method to improve the
reduction of GO film than chemical treatment, wherein it
leads to a significant removal of oxygen-containing functional
groups and efficiently recovers the sp2 network structure.
Moreover, the laser treatment of GO film allows
maintaining the structural integrity and flexibility of the GO
film, which enables the use of LRGO film as a strain sensor. In
other words, the proposed approach sets the base for an easy,
fast, cost-effective and environment-friendly fabrication route
for flexible graphene films with great application potential in
various fields of technology.
3.2 Gauge factor measurement results at different
operating temperatures
The feasibility of the fabricated LRGO/PET device in strain
sensing was tested by studying the effect of applied axial
strains, up to 0.25 per cent, on its electrical resistance at
different operating temperatures up to 80°C, as shown in
Figure 8. Each sequence of measurements was repeated three
times for three different samples. Under strain-free condition,
the average electrical resistance of the device slightly decreases
with the increase in temperature, wherein the recorded
Figure 8 Electrical resistance change of the LRGO-based sensor
with axial strain at temperatures of 20, 40, 60 and 80°C
 Graphene film development on flexible substrate
Sahour Sayed et al.
resistances were 124.8, 118.2, 112.9 and 108 ⍀ at 20, 40, 60
and 80°C, respectively. The plots of the resistance vs strain at
different operating temperatures up to 60°C show strong
linear trends with very good fits which reflects the structural
integrity and continuity of the graphene film network under
the applied mechanical strain during the test. On the other
hand, a clear deviation from linearity in strain-resistance curve
is observed at temperature of 80°C.
The GF of the LRGO-based sensor can be calculated from the
following equation equation (1), which relates it to the relation
between electrical resistance change and the applied strain:
⌬R/R
GF ⫽ (1)
␧ but on the expense of the GF approximately 65, which is
where R is the resistance of strain-free LRGO and ⌬R is the
change in its electrical resistance owing to an applied strain å.
Based on GF calculations; the relation between the applied axial
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strain and GF at 20 (a), 40 (b), 60 (c) and 80°C (d) are shown
in Figures 9(a-d). Figures 9(a-c) show that the LRGO-based
sensor has a stable GF with an average values of 77.8, 77.74 and
77.7 at 20, 40 and 60°C, respectively, with a standard error of the
mean of approximately ⫾0.2. On contrary, the GF measurement
at 80°C shows a large error bars where the average value of the
Figure 9 Relation between GF of LRGO-based sensor and axial strain at 20 (a), 40 (b), 60 (c) and 80°C (d)
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Sensor Review
Volume 36 · Number 2 · 2016 · 140 –147
GF is decreased to 71.1 with standard error of the mean of
approximately ⫾1.05 (Figure 9(d)). The reason for this
instability and inconsistency of the GF measurement at 80°C is
the softening and properties change of the PET substrate,
wherein the average glass transition temperature of the PET is
about 70°C and that subsequently affects the adhesion between
the LRGO film and its PET substrate.
The measured temperature dependency of the
LRGO-based sensor GF is smaller than that of doped silicon
strain sensors, wherein doped silicon shows significant
decrease in GF with temperature increase. Although the
temperature dependency of doped silicon GF can be
decreased by heavily doping with concentration of 1020 cm⫺3
comparable with that of LRGO-based strain sensor (Kulite
Semiconductor Products, 2004).
3.3 Strain sensing mechanism
Flexible LRGO-based strain sensor has shown in the present
investigation a potential application as a highly sensitive strain
sensor. Therefore, the underlying mechanism should be
clearly investigated to achieve better sensitivity and stability of
our novel LRGO-based strain sensor in the future.
 Graphene film development on flexible substrate
Sahour Sayed et al.
Figure 10 Schematic illustration of resistance change mechanism due to change in contact area between the overlapped flakes
According to the presented SEM results, the developed
graphene by laser reduction technique appears as overlapped
sheets or flakes connected to each other to form a continuous and
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conductive network. It is reported for multilayer graphene that
high GF attributed to change in bonds length between carbon
atoms can be observed at large strains, while in the present
investigation, the applied strain does not exceed 0.25 per cent.
From a macroscopic point of view, the change in overall electrical
resistance is also dependent on the overlapped area and contact
resistance of adjacent sheets in the graphene network (Jing et al.,
2013). In other words, the change of the overall electrical
network of graphene sheets, rather than the deformation of each
graphene sheet, is another reason causing the resistance change
and brings forth a high GF of approximately 78. Once an axial
strain is applied to the LRGO film; the contact area between
overlapped flakes changes as well as the contact resistance
between flakes, and this is reflected by an increase in the electrical
resistance of the graphene network, as shown in Figure 10. It is
worth mentioning that the overlapped area between neighboring
flakes is dependent on the density and flakes size of the graphene
film; therefore, more investigations are required to estimate the
effect of these parameters on the GF of the LRGO film.
4. Conclusions
A universal laser system was used for simultaneous reduction and
patterning of graphene oxide film deposited on flexible PET
substrate. A multilayer LRGO film with an average thickness of
3 ␮m and good adhesion to the PET substrate was obtained
accordingly. The used laser power for the reduction process was
adjusted at 2 W. The synthesized graphene film was
characterized by XRD, SEM, FTIR and Raman spectroscopy.
The feasibility of the proposed method was realized by
successfully fabricating a flexible LRGO/PET strain sensor. The
measured GF of this strain sensor was approximately 78 at
different strains up to 0.25 per cent. The effect of temperature
was studied at 20, 40, 60 and 80°C, and the sensor showed very
good stability in its GF with temperature change up to 60°C with
standard error of the mean not exceeding ⫾0.2. On the other
hand, the GF of the fabricated sensor decreased to approximately
71 with high standard error of the mean of ⫾1.052 at 80°C,
wherein the glass transition temperature of the PET substrate
was exceeded. Finally and based on the presented results, it
could be concluded that the proposed method offers a new
simple and productive technique of fabricating large-scale
graphene-based flexible devices at a low cost.
146
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Volume 36 · Number 2 · 2016 · 140 –147
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Corresponding author
Ahmed Abd El-Moneim can be contacted at:
ahmed.abdelmoneim@ejust.edu.eg
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