IEEE TRANSACTIONS

ELECTRON
ON DEVICES, VOL. ED-30, NO. 3, MARCH 1983 207

Current-Voltage and Capacitance-Voltage

Characteristics of Modulation-Doped
Field-Effect Transistors

Abstract-A model describing I-V and C-V characteristics of modula- k Boltzmann's constant.
tion do'ped FET's is developed and used to predict the performance of L Gate length.
Al,Gal-,As/GaAsFET's ingood agreementwith ourexperimental
results. It is shown that the change in the Fermi energy with the gate lJ Low field mobilityof the two-dimensionalelectron
voltage changes the effective separation between the gate and the two- gas.
dimensional electron gas by about 80 A. Current-voltage characteristics Nd Donor concentration in the(Al, Ga)As.
were calculated using a two piece as well as a three piece linear approxi- % Sheet carrier density in the two-dimensional electron
mation for the electron velocity and comparedwith experimental results. gas.
At 300 K, the two piece model overestimates the current predicted by
the thr(ee piece model only by approximately 10-20 percent. At 77 K, @b Schottky-barrier height.
however, thethree piece linear approximation for the velocityfield 4 Electron charge.
characteristic should be used since the electron mobility decreases very QT Total charge beneath the gate.
abruptly at about 200 V/cm. The effect of the nonlinear source resis- RS Source resistance.
tance is also discussed along with the gate-to-source and gate-to-drain Drain resistance.
Rd
capacitances,parameters of paramountimportance in determining
device performance. These capacitances are calculated as functions of
T Temperature.
Gate voltage.
gate-to-source and drain-to-source voltages below saturation. 5,
v, Gate voltage minus the threshold voltage.
Threshold voltage.
LIST O F SYMBOLS Vof f
Slope ofthe linearized EF(H,)function. Drain-to-source voltage at saturation.
Gate-to-drain capacitance. US Electron saturationvelocity.
Gate-to-source capacitance.
I. INTRODUCTION
Thickness of undoped (Al, Ga)As at the heterointerface.
Thickness of doped(Al, Ga)As beneath the gate.
Total thickness of(Al, Ga)As beneath thegate.
Correction for gate metalto a two-dimensional electron
M UCH progresshas beenmade in the fabricationof
modulation-doped field-effect transistors suitable for
high-speed applications [l ] , [2] , [3] . Ring oscillators have
gas spacing. operated with a propagation delay of 17.1 ps at 77 K, which is
Two-dimensional density of states (3.24 X lo" m-' comparable to the performance of Josephson devices [4]. In
v-'). [5] , a simple charge control model was introduced for C-V
Conduction band discontinuity at the heterojunction. characteristics, which is the same as that used forthe first
Zero intercept of thelinearized Ef(ns) function. order MOSFET modelling. This model assumes that the two-
Energy of the first subband in the triangular well. dimensionalelectron gasis localized in the boundaryplane
Energy of the second subband in the triangular well. between GaAs and (Al, Ga)As. A piece-wise linear approxima-
Difference between the conduction band edge and the tionfortheelectrondrift velocity in the two-dimensional
Fermi energy in the bulk (As, Ga)As. layer was used in [5] to calculate the I-V characteristics.
Fermi levels. In the present paper, we describe an improved charge control
Permittivity of (Al, Ga)As. model which takes into account the dependence of the Fermi
Critical electric field for velocity saturation. level on the gate voltage and the finite width ofthetwo-
= 2.5 X V * m4I3. dimensional gas. (Some preliminary results are given in [6]).
= 3.2 X V . m4/3. We start with the description of the new
charge control model.
Drain-to-source current at saturation. We then calculate I-V characteristics using a two piece linear
approximation for the velocity (as in [5]) and a three piece
Manuscript received August 24, 1982; revised October 12, 1982. The linear approximation. The latter approximation is necessaryto
research at the University of Minnesota and the University of Illinois
was funded by ARO and Honeywell, Inc., and AFOSR, respectively. take into account the decrease of the low field mobility with
K. Lee and M. S . Shur are with the Department of Electrical Engi- the electric field which isespecially importantat 77 K for
neering, University of Minnesota, Minneapolis, MN 55455. normally-off devices. Finally, we discuss the role of a nonlin-
T. J. Drummond and H. MorkoG arewith the Department of Elec-
trical Engineering and Coordinated Science Laboratory, University of ear source series resistance and calculate the voltage dependence
Illinois, Urbana, IL 6 1801. of the small signalgate-to-source and gate-to-drain capacitances.

0018-9383/83/0300-0207$01.00 0 1983 IEEE

208 IEEE TRANSACTIONSELECTRON
ON DEVICES,VOL. ED-30, NO. 3 , M A R C H 1983

11. CHARGE CONTROL MODEL 031 I 1

When a doped (Al, Ga)As layer is grown on top of an. .un-

doped GaAs layer, a two-dimensional electron gas is formed
at the interface due to the difference in the electron affinity of
these layers. The amount ofcharge transfer across the inter!ace
is found by equating the charge depleted from the (Al, C:.)As
to the charge accumulated in the potential well. A soluticn is
then found such that the Fermi levelis constant across the
heterointerface. The charge depletedfromthe (Al, Ga).P,sis I
5 10 15 20
given by [5] Sariace Corrler Denslty I n 10 ‘lcm.‘

The charge accumulated in the potential well is givenby
where D is the densityofstates, Eo = and El = ylrr.?-I3
are the positions of the first two allowed energy levels in. the
triangular well. The energy reference in the well is the G aAs
conduction band edge at the heterojunction. The constantsyo,
yl, and D are derived in the formalism of the triangular well
but have beenadjusted slightly to obtain closer agreement
with measured subband splitting and electron effective II[I;ISS
(D = qrn*/n.ti2). Placing a Schottky gate on the (Al, Gzu.)As
results in a certain amount of depletion beneath the gate. If
the (Al, Ga)As layer is thin enough or asufficiently large n4f:ga-
tive gate voltageis applied, thegatedepletionand junc:i:ion
depletion regionswill overlap, in which case (1) must be
replaced by
E density n, at 300 K is about half of that predicted by a less
ns = - [vg - (@b - VPZ EFI - AEc)] (3)
qd
where @b is the Schottky-barrier height, Vg is the gate vohge,
and VP2 = qNdd;/2e, dd being the thicknessof the do.l)ed
(Al, Ga)As beneath the gate andd = dd t di. The simultaneous
solution of (2) and (3) then yields the two-dimensional e:ec-
tron gas density n, in the potentialwell for cases with n, gre:]ter
than zero and less than the equilibrium nso. If the (Al, Ga:iAs
layer is too thick or a sufficiently large positive gate voltag: is
applied, a parallel conduction path in the (Al, Ga)As is created.
For a given dd the maximum gatevoltage which affects :he
two-dimensional electron gas can be obtained by equating ( 1 )
and (3) using the Fermi energy at the interface in equilibrit m.
This condition implies that the (Al,Ga)As underneath the gate
is fully depleted.
In the model given in [5] the total charge in the two-dimen-
sional electron gasis foundneglecting the variation of .:he
Fermi level with the gatevoltage
Fig. 1. Fermi potential versus surface carrier density at 300, 77, and
4 K, respectively (solid lines). Linear approximations ((5)) are shown
as dashed lines.
rent saturation is reached when the electric field at the drain
side of the gate is equal to the saturation field F, = u,/p [5] ,
[7] where us is the saturation velocity and p is, the low field
mobility. In a typically normally-off transistor, however, E F ~
can be larger than 0.14 V when the device is fully on, causing
the charge to be significantly overestimated. The Fermi level
E F ~determines the width of the potentialwell at the interface.
As the Fermi level drops, the well becomes wider and the
spatial distribution of the electrons changes. As shown below,
this effect leads to an increase of about 80 A in the effective
distance from the two-dimensional electron gas to the gate, to
a small change in the threshold voltage, to a very pronounced
decrease of the transconductance near the threshold and to a
“subthreshold” current.
Equation (2) is a quadraticequationwithrespect to exp
(qEFi/kT). The solutions of ( 2 ) at 300, 77, and 4 K, respec-
tively, are shown in Fig. 1 (solid lines). The calculated electron
accurate three-dimensional electron gas model which neglects
the quantizationin the potential well and uses the Joyce-Dixon
approximation [8]. Forthe values of n, between 5 X 10’’
cm-2 and 1.5 X lox2cm-’, these dependenciescan be approxi-
mated as (shown in dashed lines)
Epi = AEFO(T) t a n, (5)
where a 0.125 X V * m-2and AEFO N- 0 at 300 K and
AEFO = 0.025 V at 77 K and below. Substituting (5) into (3),
we find the modified equation of the charge control model
where
and

where The estimate for Ad given by (8) is in good agreement with

the experimental data reported in [8] . The “apparent” mobil-
v,”ff= @b - AEc - v p 2 ity for the two-dimensional gas calculated from the drain con-
is the threshold voltage.Using (4) I-V characteristics of‘ a ductance versus gate voltagecurvewas 5 5 000 cm2/V * s at
modulation-doped FET can be found assuming that the cur- 77 K. The measured mobility was 61 000 cm2/V s. We esti-
LEE et a i : : CURRENT- AND CAPACITANCE-VOLTAGE CHARACTERISTICS O F FIELD-EFFECT TRANSISTORS 209

-6 I I I
“>3
.c_a -- Exact Two Plece Model
Lo-
M
I .....Present Model
-Asymptote
-E4-
P
3
C
e
0 2-
-E,=O I -c
”“ Nurnerlcol Solutlon N
-
-- Present Model 0
E
6
I I
=0..
-4 -2 0 2 4 6
I 2 NormallzedGateVoltoge CV,/V,)
Gate Voltage ( V )

Fig. 2. Surface carrier density versus voltage differencebetween gate Fig. 3. Normalized drain saturation current versus normalized gate-to-
and channel (V& = 0.15 V and d = 400 A). Solid line: simple charge source voltage ( R , = 0). Dotted line: equation (10). Dashed line:
control model proposed in [5], (4). Do’tted line: numerical solution exact solution using two piece model. Solid line: asymptote of (lo),
from (2) and (3). Dashed line: present model, ( 6 ) . (11).

mate that thevalue of A d required to explain this difference is

100 8:, in good agreement with (8). Thus Ad gives an impor-
tant correction especially for a normally-off device where d
may be ofthe order on 300 A or less.
Theimplicationsof this model are shown in Fig. 2. The
exact solution of (2) and (3) is shown by the dottedline. This
canbe compared with the solution of ( 6 ) using the linearized
EFj versus rz, relation (dashed line) and the charge control
model of Delagebeaudeuf and Linh where E F ~ is set equal to
F2
zero (solid line). Since AEF, is zero at 300 K, the difference GI
Electrtcal Fleld
between the two approximations is due to the A d = 80-8in- Fig. 4. Three piece linear approximation for
the velocity field
crease in the effective gate to two-dimensionalelectron gas characteristic.
spacing. If we also introduce a thresholdvoltage V& (see (6))
similar to the threshold voltage of a MOSFET, a substantial t.W
“subthreshold” charge exists leading to thesubthreshold I;, = ___ usw; - VI). (1 1)
d+Ad
current. Our modified charge control model,however, is quite
adequate for device modelling. As can be seen in Fig. 3 , the agreement is quite good at high
Assu.mingas in [5], [ 6 ] that the current saturation occurs gate voltage (above threshold), but there is a considerable sub-
when the electrical field at the drain side of the gate exceeds threshold current flowingas pointed out in[6]. For V i greater
the velocity saturation field F, = u,/p and using the Shockley than K1 and d of around 300 a, our simplified charge con-
model in order to describe the longitudinal field distribution in trol model (6) seems to be quite adequate.
the channel belowthe saturationvoltage we find
111. FIELDDEPENDENTMOBILITY
V& = V i + V,, - ( V i z + VA)’” + &(RS + R d ) (9) As recentexperimental results indicate themobilityofa
and two-dimensional gas becomes field dependent when the elec-
tric field is substantially less than the electric field required to
saturate the drift velocity [9] , especially a.t low temperatures.
We use a linear three piece approximation of the u versus F
where curve to take the field dependent of the mobility into account
(see Fig. 4).
When the drain-to-source voltage is smallthe Shockley model
applies, leading to
IDS = P(v,‘ &S - 3 V,“,> (12)
ydss is the drain-to-source saturation voltage, I& is the satura- for
tion current, L is the gate length, and W is the gate width,
respectively.
v,, < VB‘ + v, - = VIS. (13)
The normalized drain saturation current for Rs = 0 (i& = Here V, = F1L . At higher V,,
I&/p&;) versus normalized gatevoltage (ug = Vi/V,,) is
depicted in Fig. 3. Also shown in the drain current from the VIS < Vds < VdSs- (14)
exact solution of (2) and (3) using the two piece model and There are two regions withdifferent differential mobilities
the asymptote of (lo), i.e., under thegate. The first region
 210 IEEE TR4NSACTIONS ON ELECTRON
DEVICES, VOL. ED-30, NO. 3, MARCH 1983

O<X<L1 (15 ) The resulting (24) and (25) look quite similar to the simpler
where L1 is defined as the point where F = F 1. In this rcigion equations of the linear two piece model.
the mobility is equal to the low field mobility p. In thesecond IV. SMALL SIGNAL GATE CAPACITANCEMODEL
region
For simplicity, we calculate the small signal gate capacitance
L1 < x < L (16) using the two piece model. The total charge QT in the Shock-
the differential mobility is equal to p1 In region 1 (see Fig. 4)
~
ley regime is given
the current is given by
IDS = CO(Gr- V1)Ul 3 7)
where u1 = v(Fl)(see Fig. 4)

=.Ls vd dx
qn, -dV
dV

In region 2 we find

where
eW
Integrating (18) with respect t o x we obtain co = ___
d+Ad'
r
Then

cgs= -
~ Q T
a Vgs
L
(19)
Equations (17) and (19) are solved numerically to yield. L 1 and
and Ids.
At the saturation voltage Vd, = V& the analytical so1ut:on
may be foundusing the following equation
I& = co (vg'
- V&) us. (:;!0)
The result of the solution for(1 7 ) ,(19), and (20) is given by
In Figs. 5 and 6 , normalized capacitance Cgs/Co and cgd/cO
u1 1 - dl + b( 5'/V0)' are plotted against normalized drain-to-sourcevoltage V&/V$l
b VO (:!I) using normalized gate voltage V,,/V,, as parameter. The cal-
culation is done up to the saturation point. As canbeseen
and from Figs. 5 and 6 , over a wide range of voltages each capaci-
tance value is nearly onehalf of the totalgate capacitance. The
(2 2) capacitances are calculated using the charge controlmodel
((4)) and thus our results are not accurate near the threshold
where voltage.

V. DISCUSSIONAND COMPARISION WITH THE

EXPERIMENTAL RESULTS
If the source resistance R, and the drain resistance Rd are Totesttheaccuracyofthemodel,anormally-offanda
included, these equations become normally-on modulation doped FET fabricatedin our lab were
selected and characterized. The low field mobility was obtained
from the Van der Pauw-Hall measurements of the particular
wafer from which the FET was fabricated. The gate width is
145 pm and the length is 1 pm. The heterostructures used to
and fabricate these FET's were grown by molecular-beam epitaxy
on Cr-doped semi-insulating substrates. The structure consisted
of consecutively, a I-pm undoped GaAs buffer layer, a 60-8
undoped Al,Ga,-,As layer anda 600-8 n-type (Al, Ga)As
(2:.!;) layer doped with Si to a level of 1 X 10" ~ m - ~The . 600-8
LEE et al.: CURRENT- AND
CAPACITANCE-VOLTAGE CHARACTERISTICS OF FIELD-EFFECT TRANSISTORS 211

-
i
i
c
0
U 0.6 I 2
a
n 10 :/
c

-3 Piece Mode
m ....2 P,ece Mode
o Experimental Data
W
L
e
0
s o -10 -08 - 0 6 -0.4-02
L
0 0.2
U
0.4 3 608 1.0
0 0.2 04 06 0.8 10
Drain-To-Source Voltage (vd,/v,,i Gate-To-Scurce
Voltage (V,,[Vl)

Fig. 5 . Normalized gate-to-source capacitance versus normalized drain- Fig. 7. Drain saturation current versus gate-to-source voltages for n-
to-source voltage fordifferent values ofnormalizedgate-to-source ON €ET.
voltage. (All voltages are normalized with respect to Vsl .)

- 3 Piece Mode
I

-2 Piece Mode
3 Experimental Dota

eo.2-
W
+
0
O
-1O-CB
L
-36
A
- 0- 4
02
L ;
0
dL
02 04
06
? l
38
0

(30 I I Gate-To-Source
Voltcqe Wq5[Vl)
02 04 0.6 0.8 1.0
Dratn-To-Source
Voltage
(Vds/dsi) Fig. 8. Drain saturation current versus gate-to-source voltages for n-
OFF FET.
Fig. 6. Normalized gate-to-draincapacitance versus normalizeddrain-
to-source voltage for different values ofnormalizedgate-to-source
voltage. (All voltages are normalized with respect to V,, .)

dimension wasused to allow fabrication of either normally-

on or normally-off devices by recessing the gate. For x = 0.3,
Nd = 1 X 10l8 ~ m - and ~ , di = 60 8, the doped (Al, Ga)As re-
maining beneath the gate shouldbe about 250 and 3508 thick
___*___..__.-------
to obtain normally-off and normally-ondevices, respectively.
The calculated and experimental drain saturation currents at -____________^

room temperature as a function of the gate voltage are shown

in Figs. 7 and 8. Nd = 1 X 10l8 ~ m - p~=,0.68 m2/V * s, and
R, = 7 S2 for the normally-on and 10 S2 for the normally-off
FET, respectively are measured. Gat = 2 X lo5 m/s [9] ,F1 =
1 kV/cm and Fz = 3.5 kV/cm are used for our calculation in
Figs. ’7 and 8 (solid line: three piece velocity model; dotted
line: two piece velocitymodel.Theexperimental values are
marked by the dots). The measured transconductance for the
n-ON device at 300 K is 225 mS/mm. Even though 10 S2 is
measured as R, for the n-OFF FET, 12 S2 is used for our model
to obtain the best fit to theexperimentaldata. A possible
explanation for this is given below. As can be seen from Fig. 7,
the ageement between our model and the experimental data
is quite good except near the threshold. (This regionis not
described by the model.) The two piece model overestimates
the current predicted by the three piece modelbyapproxi-
mately10-20percent.The I,,-V,, characteristics forthe
n-ON IFET are shown in Fig. 9. As can be seen from the figure,
the agreement betweenthe measurement and our calculation is
very good.
Forthe II-OFF FET,theagreement isalso good butthe
value of R , has to be adjusted to give a best fit. The slightly
smaller current measured at V,, = 0.8 V may be due to the
3
Fig. 9. Id.,-Vd, characteristics of a n- OX FET. Solid line: three piece
model. Dots: measured points.
fact that our model becomes invalid at gate voltage higher than
Voff + (Vpo),, where
The justification for using R, = 12 S2 instead of 10 S2 may be
as follows: The fabricated FET has 1-pm spacing between the
source and gate. The voltage drop across this region may be so
large that R , should increase as thecurrent increases. This
effect should be morepronounced for n - o w FET’s,even
thoughthe surface depletionpotential for (Al, Ga)Aswas
reported to be substantially smaller than the Schottky-barrier
height [ 101 .
VI. CONCLUSION
A newcharge control model for modulation-doped FET’s,
which takes into account the variation of the Fermi energy of
212 IEEE TRh:‘TSACTIONS ON ELECTRON DEVICES, VOL. ED-30, NO. 3, MARCH 1983

the two-dimensional electron gas with gate voltage, was devel- [4] S . Hiyamizu, T. Mimura, and T.Ishikawa, “MBE-Grown GaAs/
oped. This model together with the two and threepiece 1ir.ear N-AIGaAs heterostructures and their application to high electron
mobility transistors,” Japan. J. Appl. Phys., vol. 21, Suppl. 21-1,
approximations for the velocity field characteristic, was used p. 161, 1981.
forthe analytical calculation ofthe I-V characteristics of [ 5 ] D. Delagebeaudeuf and N. T. Linh, “Metal-(n)AlGaAs-GaAs two-
AlxGal,As/GaAs FET’s in good agreement with experime~ltal dimensionalelectron Gas FET,” IEEE Trans. Electron Devices,
vol. ED-29, no. 6, p. 955, June 1982.
results. Small signal gate-to-source andgate-to-drain capaci- [6] T. J. Drummond, H. Morkog, K. Lee, and M. S . Shur, “Model for
tances are calculated below saturation. Their values are shc wn modulation-doped field-effect transistor,” IEEE Electron Device
to be nearly one half of the totalgate capacitance over a ~ i d e [7] Lett., vol. EDL-3, p. 338, 1982.
P. L. Hower and G. Bechtel, “Current saturation and small-signal
range of voltages. characteristics of GaAs field-effecttransistors,” IEEE Trans.
REFERENCES Electron Devices, vol. ED-20, p. 213, 1973.
[8] S . Hiyamizu and T. Mimura, “MBE-Grown selectively doped
T. Mimura, S. Hiyamizu, K. Joshen, and K. Hikosaka, “Enha xce- GaAs/n-A1,Gal,As heterostructuresand theirapplications to
ment-mode high electron mobility transistors for logic app ica- high electronmobilitytransistors,” in SemiconductorTechnol-
tions,” Japan. J. Appl. Phys., vol. 20, p. L317, 1981. ogists, J. Nishizawa, Ed. North Holland, 1982, pp. 258-271.
M. Laviron, D. Delagebeaudeuf, P. Delescluse, P. Etienne, J. [9] T. J. Drummond, W. Kopp, H. MorkoG, and M. Keever, “Trans-
Chaplart, and N. T. Linh, “Low noise normally on and normally port in modulationdopedstructures (A1,Gal,As/GaAs) and
off two-dimensional electron gas field effect transistor,” A spl. correlations with Monte Carlo calculations (GaAs),” Appl. Phys.
Phys. Lett., vol. 40, p. 530, 1982. Lett., vol. 41, pp. 277-279, 1982.
T. J. Drummond, W. Kopp, R. E. Thorne, R. Fischer, antiH. [lo] D. Delagebeaudeuf, M. Laviron, P. Delescluse, P. N. Tung, J.
Morkop, “Influence ofAl,Gal,As buffer layers on the pe:[for- Chaplart, and N. T. Linh, “Planar enhancement mode two-dimen-
mance of modulation doped field effect transistors,” Appl. P ~ I Y S . sional electron gas FET associatedwithalow AlGaAs surface
Lett., vol. 40, p. 879, 1982. potential,” Electron. Lett., vol. 18, no. 2, p. 103, 1982.

Analysis of Camel [Gate FET‘s (CAMFET‘s)

ROBERT E. THORNE, SHUN-LIN SU, RUSSELL. J. FISCHER, WILLIAM F. KOPP, W. GREGORY LYONS,
PAUL A. MILLER, AND HADIS MORKOC, SENIOR MEMBER, IEEE

Abstract-The performance of camel gate GaAs FET’s and its delwn- that thesubmicrorneter dimensions required for high-frequency
dence on device parameters has been described. In particular, the de- operation are relativelyeasy to obtain. MESFET’s, however,
pendence of the performance on the dopingthickness product of‘ the
arebeset with several problems. The metal-semiconductor
p’ layer was examined. Theoretical calculations indicate that using1 irge
pt doping-thickness products provides relatively voltage-indepenclent contacttends to be unstable, particularly at high operating
transconductances and large reverse breakdown voltages, both of w111ichtemperatures, leading to degraded reliability [ I ] . Further,
are desirable in large signal applications. Decreasing the p’ dopin;i; in-
the barrier height to current conduction is difficult to adjust.
creases the transconductance, which is desirable in logic applicati ms.Schottky barriers with acceptable characteristics cannot be
Comparison with performance of fabricated devices indicatesgood
agreement between theory and experiment over a wide range of strac-
obtained on somesmallbandgap semiconductorssuch as
tural parameters. Microwave measurements on CAMFET’s have yielded InGaAs unless a tunneling oxide layer is used to enhance the
a gain of 10 dB at 9 GHz. barrier height [ 2 ] .
An alternative to the MESFET is the JFET, which employs
a p-n junction to modulate the channel. The p-n junction
I. INTRODUCTION gateallows gate biasesofup to +1 V to be applied without
HEPRINCIPAL type of FET used at present for h gh- appreciable gate conduction. However, these devicesarerela-
T frequency applications i s the MESFET.Thisdevicellses tively difficult to fabricate, particularly with the dimensions
a rectifying metal-semiconductor contact for modulating, the required for high-frequency operation. In addition,they re-
width of the FET channel. The main virtue of this devic: is quire that an ohmic contact be made to a p-type semiconduc-
tor, which can lead to large gate resistances.
Manuscript received August 24, 1982; revised November 1, 1982. ‘’his An alternative to the JFET and MESFET has recently been
work was supported by the Air Force Office of Scientific Research. proposed [ 3 ] . The camel-gate FET (CAMFET)usesvery thin
The authors are withthe Department of Electrical Engineering and
Coordinated Science Laboratory, University of Illinois, Urbana.IL n+ and p+ layers, which together with the channel form acamel
61801. diode [4] to modulate the channel current. Useof the camel

0018-9383/83/03~00-0212$01.000 1983 IEEE