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TOSHIBA 2SC2500
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2$C2500
STROBE FLASH APPLICATIONS Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS SANAL
¢ High DC Current Gain and Excellent hp Linearity
: hpg (1)=140~600 (Vog=1V, I¢=0.5A)
+ RR (2)=70 (Min), 200 (Typ.) (VoR=1V, Ig=2A)
© Low Saturation Voltage
: VOR (sat)=0.5V (Max.) (Ig=2A, Ip=50mA)
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MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC syMBoL | RATING | UNIT
Collector Base Voliage Von 3 3
Vcrs 30 i
Collector-Bmitter Voltage v :
VcEO 10 1. EMITTER ~
[Emitter Base Voltage 2 COLLECTOR
se Note VEBO s V1) 3 ease
(Collector De. Io 2 A
(Current Pulsed (Note D)_| Icp 5 JEDEC _TO-92MOD
Base Current Ip 05 A_||serra =
[Collector Power Dissipation Pc 900 | mw |[TOSHIBA 2-5J1A
Junction Temperature Ty 150 °C | Weight : 0.364 (Typ)
Storage Temperature Range Tag =55~150 | °C
(Note 1) : Pulse WidthS 10ms, Duty Cycles 30%
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC symgoL | TEST conprTion —_| aan. | Typ. | Max. UNIT
(Collector Cut-off Current TcBO. — | — | 100 | aA
[Emitter Cut-off Current TEBO = [= [00 aa
(Collector-Bmitier Breakdown
Voltage Vcro woi|-/- |
Bmitter-Base Breakdown
Voltage VEBO S{-|-|¥
RE (a) =1V, Ig= _
DC Current Gain (ote’2) |VoB=1V, 10=0.54 140 600
bre) [Von=1V, 1g=2A 70 | 200 | —
(Collector Emitter Saturation
Setters Vou (sat) [Io=2A, Ip=50mA — | o2] o5 | v
[Base-Emitier Voltage Var | Von=1V, Io=2A = [oss [as |v
[Transition Frequency fr Vor=1V, Io=0.5A — [150 | — | inte
(Collector Output Capacitance | Cop _[Vop=10V, In=o, f=IMz| — | 27] — | oF
(Note 2) : hy (1) Classification A: 140~240, B : 200~330, C : 300~450, D:
420~600
200TOSHIBA 2SC2500
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z 2001-11-05TOSHIBA 2SC2500
RESTRICTIONS ON PRODUCT USE 0070700
@ TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the “Handling Guide for
Semiconductor Devices," or “TOSHIBA Semiconductor Reliability Handbook" etc.
@ The TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended
Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
@ The information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
@ The information contained herein is subject to change without notice.
3 2001-11-05