Photomicrosensor (Transmissive)

EE-SX1041
■ Dimensions ■ Features
Note: All units are in millimeters unless otherwise indicated. • General-purpose model with a 5-mm-wide slot.
• PCB mounting type.
0.2 max. 0.2 max.
14±0.2 • High resolution with a 0.5-mm-wide aperture.

■ Absolute Maximum Ratings (Ta = 25°C)

6±0.2
Item Symbol Rated value
0.5±0.1 Emitter Forward current IF 50 mA
(see note 1)
Optical Pulse forward cur- IFP 1A
axis
rent (see note 2)
Reverse voltage VR 4V
Detector Collector–Emitter VCEO 30 V
voltage
5 min. Two, 0.7± 0.1 Emitter–Collector VECO ---
Four, 0.25 voltage
Four, 0.5 2.35±0.1
5.2±0.1 Collector current IC 20 mA
Two, 2.54 Collector dissipa- PC 100 mW
tion (see note 1)
Ambient tem- Operating Topr –25°C to 95°C
Two, 0.7±0.1 dia. perature Storage Tstg –30°C to
100°C
Internal Circuit
Soldering temperature Tsol 260°C
K C (see note 3)
Unless otherwise specified, the
tolerances are as shown below. Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
A E Dimensions Tolerance
2. The pulse width is 10 µs maximum with a frequency of
3 mm max. ±0.3 100 Hz.
Terminal No. Name 3. Complete soldering within 10 seconds.
3 < mm ≤ 6 ±0.375
A Anode
6 < mm ≤ 10 ±0.45
K Cathode
C Collector 10 < mm ≤ 18 ±0.55
E Emitter 18 < mm ≤ 30 ±0.65

■ Electrical and Optical Characteristics (Ta = 25°C)

Item Symbol Value Condition
Emitter Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA
Reverse current IR 0.01 µA typ., 10 µA max. VR = 4 V
Peak emission wavelength λP 940 nm typ. IF = 20 mA
Detector Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V
Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx
Leakage current ILEAK --- ---
Collector–Emitter saturated volt- VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA
age
Peak spectral sensitivity wave- λP 850 nm typ. VCE = 10 V
length
Rising time tr 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA
Falling time tf 4 µs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA

58 EE-SX1041 Photomicrosensor (Transmissive)

■ Engineering Data
Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current
Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)

Ta = 25°C

Collector dissipation PC (mW)

Forward current IF (mA)

IF VCE = 10 V
Forward current IF (mA)

Light current IL (mA)

Ta = −30°C
PC
Ta = 25°C
Ta = 70°C

Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)

Light Current vs. Collector−Emitter Relative Light Current vs. Ambi- Dark Current vs. Ambient
Voltage Characteristics (Typical) ent Temperature Characteristics Temperature Characteristics
(Typical) (Typical)

Ta = 25°C IF = 20 mA VCE = 10 V
VCE = 5 V 0 lx
Relative light current IL (%)
Light current IL (mA)

Dark current ID (nA)

IF = 50 mA

IF = 40 mA

IF = 30 mA

IF = 20 mA

IF = 10 mA

Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)

Response Time vs. Load Resist- Sensing Position Characteristics Response Time Measurement
ance Characteristics (Typical) (Typical) Circuit

VCC = 5 V IF = 20 mA Input
Ta = 25°C VCE = 10 V
Relative light current IL (%)
Response time tr, tf (µs)

Ta = 25°C 90 %
(Center of Output 10 %
optical axis)

Input

Output

Load resistance RL (kΩ) Distance d (mm)

EE-SX1041 Photomicrosensor (Transmissive) 59