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1. Introduction The plane wave cut off energy is taken to be 1400 eV.
The Monkhorst and Pack k-point meshes [18] are used
Perovskite-type materials have attracted much atten- so as to perform the Brillouin zone integrations with
tion in the field of photovoltaic devices. This is due to a 10 × 10 × 10 special k points mesh.
their important optical and electronic properties [1–9].
As a matter of fact, the power conversion efficiencies of
perovskite solar cells were improved by about 20% in ten 3. Results and discussion
years, which makes them comparable with polycrystalline
silicon solar cells. The electronic band structure is an effective means for
Generally, perovskite solar cells with excellent perfor- studying the electronic and optical properties of semi-
mance are based on lead which is toxic and are insta- conductors [19–23]. The accurate knowledge of these
ble [10]. This severely limits their applications in photo- parameters is an important information for synthesiz-
voltaics. To overcome this shortcoming, a new generation ing and fabricating devices based on these semiconduc-
of perovskites materials such as Cs2 AgBiBr6 was pro- tors [24–27]. In this regard, the electronic band structure
posed [11–14]. These materials are inorganic, stable, and of Cs2 AgBiBr6 double perovskite has been computed us-
non-toxic. Besides, they are regarded as useful materials ing the GGA-PBE approach. Our findings are displayed
for photovoltaic applications since they were reported to in Fig. 1. The picture appears to be qualitatively sim-
be successfully synthesized [15]. ilar to those of other semiconducting materials [28, 29].
The fundamental properties of perovskite solar cell ma- A close inspection of Fig. 1 shows the absence of inter-
terials, mainly the electronic and optical properties play section points between the Fermi level and energy bands.
a crucial role in the design and fabrication of devices This indicates that the material of interest is a semicon-
based on these materials. For that, the current contribu- ductor. By observing Fig. 1, one can note that the va-
tion attempts to investigate the electronic band structure lence band maximum is located at the high symmetry
and absorption coefficient of the double perovskites ma- point L in the Brillouin zone, whereas the conduction
terial Cs2 AgBiBr6 using first-principles calculations. band minimum occurs at the Γ point. This suggests that
the material in question is an indirect (L-Γ ) band gap
semiconductor. The computed magnitude of this band
2. Computational method
gap is found to be 1.32 eV. As a matter of fact, the na-
The computations realized in this paper are based on a ture of the band gap of Cs2 AgBiBr6 limits its application
pseudopotential plane-wave method using the CASTEP in photovoltaics. In this case, we suggest replacing Bi
code [16]. The exchange and correlation potential is by In in order to change the nature of the band gap.
described using the generalized gradient approximation Work is in progress in this respect and will be reported
(GGA) of Perdew et al. (PBE) [17]. in due course.
The optical properties of semiconductors are impor-
tant physical parameters that are required to model
quantum structures [30, 31]. Before being absorbed,
∗ corresponding author; e-mail: n_bouarissa@yahoo.fr the incident light of a given wavelength penetrates into
a material and travels a certain distance. This distance
(486)
Band Structure and Optical Spectra of Double Perovskite Cs2 AgBiBr6 for Solar Cells Performance 487
References