Order this document by MC33169/D


    
   
  GaAs POWER AMPLIFIER
SUPPORT IC
The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs
used in hand portable telephones such as GSM, PCN and DECT. This
device provides negative voltages for full depletion of Enhanced MESFETs SEMICONDUCTOR
as well as a priority management system of drain switching, ensuring that the TECHNICAL DATA
negative voltage is always present before turning “on” the Power Amplifier.
Additional features include an idle mode input and a direct drive of the
N–Channel drain switch transistor.
This product is available in two versions, – 2.5 and – 4.0 V. The – 4.0 V
version is intended for supplying RF modules for GSM and DCS1800
applications, whereas the – 2.5 V version is dedicated for DECT and PHS
systems.
• Negative Regulated Output for Full Depletion of GaAs MESFETs 14

• Drain Switch Priority Management Circuit

• CMOS Compatible Inputs 1

• Idle Mode Input (Standby Mode) for Very Low Current Consumption
• Output Signal Directly Drives N–Channel FET DTB SUFFIX
• Low Startup and Operating Current PLASTIC PACKAGE
CASE 948G
(TSSOP–14)

PIN CONNECTIONS

Simplified Block Diagram

C2 Input 1 14 VCC
C3
+ C1/C2 2 13 Idle Mode Input
VBB Double +
12 VBattery
+ – – + VCC
(2.7 to 7.0 V) C1 Input 3 12 VBB Double
C1 2 C2 1 14
8 VO Output 4 11 VBB Triple
MMSF4N01HD
VBB 11 3 VBB
Generator Gate Drive Output VO Charge Pump
Triple + MC33169 Capacitor+ 5 10 Sense Input
C4 (Voltage Tripler)
– Tx Power
Gnd 6 9
Control Input
Tx Power Priority VO Charge Pump
Control 9 Management 7 8 Gate Drive Output
Capacitor–
Input RF RF
In Out (Top View)
13 Power Amplifier
Idle Sense
10
Mode Input
6 Sense Input
Gnd
Negative
Generator
Charge
Pump ORDERING INFORMATION
7 – + 5 4 – + Operating
C Device Temperature Range Package
Cp VO Ci + f
Output
(– 2.5 V or – 4.0 V) Rf MC33169DTB–4.0
TA = –40° to +85°C TSSOP–14
MC33169DTB–2.5
This device contains 148 active transistors.

This document contains information on a new product. Specifications and information herein  Motorola, Inc. 1996 Rev 1
MOTOROLA
are ANALOG
subject to change IC DEVICE DATA
without notice. 1
 MC33169
MAXIMUM RATINGS
Rating Pin Symbol Value Unit
Power Supply Voltage 14 VCC 9.5 V
Tx Power Control Input 9 VTx VCC V
Idle Mode Input 13 Vi VCC V
Sense Input 10 VSense –5.0 to 0 V
Negative Generator Output Source Current 4 ISS 20 mA
Charge Pump Capacitor Current – Imax 60 mA
Diode Forward Current – IFmax 60 mA
Gate Drive Output Current 8 IGO 5.0 mA
Power Dissipation and Thermal Characteristics –
Maximum Power Dissipation @ TA = 50°C PD 417 mW
Thermal Resistance, Junction–to–Air RθJA 240 °C/W
Operating Junction Temperature TJ +150 °C
Operating Ambient Temperature – TA –40 to +85 °C
Storage Temperature Range – Tstg –60 to +150 °C
NOTE: ESD data available upon request.

MC33169–4.0
ELECTRICAL CHARACTERISTICS (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating
ambient temperature range that applies, unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit
VBB GENERATOR (VOLTAGE TRIPLER)
Oscillator Frequency – fosc 90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V, IO = 3.0 mA) V
Double Voltage 12 VBBD 4.6 5.0 –
Triple Voltage 11 VBBT 6.1 7.0 –
Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 11 VBBT – 11.2 –
NEGATIVE GENERATOR OUTPUT
Output Voltage (IO = 3.0 mA) 4 VO –3.75 –4.0 –4.25 V
Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 Vr mVpp
(IO = 0 to 5.0 mA) – 2.0 –
PRIORITY MANAGEMENT SECTION
Idle Mode Input 13
Input Voltage High State (Logic 1) VIH 2.0 – 2.7 V
Input Voltage Low State (Logic 0) VIL 0 – 0.5 V
Input Current High State (Logic 1) IIH 10 – 80 µA
Input Current Low State (Logic 0), i.e. Standby Mode IIL – – 1.0 µA
Tx Power Control Input 9
Input Voltage Range VTx 0 – 3.1 V
Input Voltage “Off” State (Zero RF Output Level) VTx(off) – 0.7 – V
Input Voltage “On” State (Maximum RF Output Level) VTx(on) – 2.7 – V
Input Resistance Rin – 90 – kΩ
Bandwidth (– 3.0 dB) B – 1.0 – MHz
Gate Drive Output 8
Voltage (VTx = 0 V) VGO – – 0.5 V
Voltage (VTx = 3.0 V) VCC+2.7 – –
Peak Current (Source and Sink) (VTx = 3.0 V) IGO – 3.0 – mA
Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 Vsense –3.0 –3.2 – V

2 MOTOROLA ANALOG IC DEVICE DATA

 MC33169

MC33169–4.0
ELECTRICAL CHARACTERISTICS (continued) (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating
ambient temperature range that applies, unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit

TOTAL DEVICE POWER CONSUMPTION

ICC Operating (VTx = 3.0 V, IO = 3.0 mA) – ICC – 10 15 mA
ICC Operating – ICC mA
(VTx = 0 V, IO = 3.0 mA) – 12 15
(VTx = 0 V, IO = 0 mA) – 4.0 5.0
Standby Mode (Idle Mode Input = 0 V) – ICC – – 1.0 µA

MC33169–4.0
ELECTRICAL CHARACTERISTICS (VCC = 2.7 V. For typical values TA = 25°C, for min/max values TA is the operating
ambient temperature range that applies, unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit
VBB GENERATOR (VOLTAGE TRIPLER)
Oscillator Frequency – fosc 90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V, IO = 3.0 mA) V
Double Voltage 12 VBBD 4.6 5.0 –
Triple Voltage 11 VBBT 6.1 7.0 –
Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 11 VBBT – 11.2 –
NEGATIVE GENERATOR OUTPUT
Output Voltage (IO = 1.0 mA) 4 VO – 3.75 – 4.0 – 4.25 V
Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 Vr mVpp
(IO = 0 to 5.0 mA) – 2.0 –
PRIORITY MANAGEMENT SECTION
Idle Mode Input 13
Input Voltage High State (Logic 1) VIH 2.0 – 2.7 V
Input Voltage Low State (Logic 0) VIL 0 – 0.5 V
Input Current High State (Logic 1) IIH 10 – 80 µA
Input Current Low State (Logic 0), i.e. Standby Mode IIL – – 1.0 µA
Tx Power Control Input 9
Input Voltage Range VTx 0 – 3.0 V
Input Voltage “Off” State (Zero RF Output Level) VTx(off) – 0.7 – V
Input Voltage “On” State (Maximum RF Output Level) VTx(on) – 2.7 – V
Input Resistance Rin – 90 – kΩ
Bandwidth (– 3.0 dB) B – 1.0 – MHz
Gate Drive Output 8
Voltage (VTx = 0 V) VGO – – 0.5 V
Voltage (VTx = 3.0 V) VCC+2.7 – –
Peak Current (Source and Sink) (VTx = 3.0 V) IGO – 3.0 – mA
Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 Vsense –3.0 –3.2 – V
TOTAL DEVICE POWER CONSUMPTION
ICC Operating (VTx = 3.0 V) 14 ICC mA
(IO = 3.0 mA) – – 15
(IO = 1.0 mA) – – 9.0
ICC Operating (VTx = 0 V) 14 ICC mA
(IO = 3.0 mA) – – 13
(IO = 1.0 mA) – – 9.0
(IO = 0 mA) – 4.5 6.0
Standby Mode (Idle Mode Input = 0 V) 14 ICC – – 1.0 µA

MOTOROLA ANALOG IC DEVICE DATA 3

 MC33169

MC33169–2.5
ELECTRICAL CHARACTERISTICS (VCC = 4.8 V. For typical values TA = 25°C, for min/max values TA is the operating
ambient temperature range that applies, unless otherwise noted.)
Characteristic Pin Symbol Min Typ Max Unit
VBB GENERATOR (VOLTAGE TRIPLER)
Oscillator Frequency – fosc 90 100 110 kHz
Oscillator Duty Cycle – DC 35 50 65 %
Output Voltage (VCC = 3.0 V, IO = 3.0 mA) V
Double Voltage 12 VBBD 4.6 5.0 –
Triple Voltage 11 VBBT 6.1 7.0 –
Triple Voltage (VCC = 7.2 V, IO = 3.0 mA) 11 VBBT – 11.2 –
NEGATIVE GENERATOR OUTPUT
Output Voltage 4 VO V
(IO = 3.0 mA) – 2.35 – 2.5 – 2.65
(IO = 5.0 mA, VCC = 6.0 V) – – 2.5 –
Output Voltage Ripple with Filter (Rf = 33 Ω, Cf = 4.7 µF) 4 Vr mVpp
(IO = 0 to 5.0 mA) – 2.0 8.0
PRIORITY MANAGEMENT SECTION
Idle Mode Input 13
Input Voltage High State (Logic 1) VIH 2.0 – 2.7 V
Input Voltage Low State (Logic 0) VIL 0 – 0.5 V
Input Current High State (Logic 1) IIH 10 – 80 µA
Input Current Low State (Logic 0), i.e. Standby Mode IIL – – 1.0 µA
Tx Power Control Input 9
Input Voltage Range VTx 0 – 3.0 V
Input Voltage “Off” State (Zero RF Output Level) VTx(off) – 0.7 – V
Input Voltage “On” State (Maximum RF Output Level) VTx(on) – 2.7 – V
Input Resistance Rin – 90 – kΩ
Bandwidth (– 3.0 dB) B – 1.0 – MHz
Gate Drive Output 8
Voltage (VTx = 0 V) VGO – – 0.5 V
Voltage (VTx = 3.0 V) VCC+2.7 – –
Peak Current (VTx = 3.0 V) IGO – 3.0 – mA
Undervoltage Lockout Voltage on Sense Input (Magnitude) 10 Vsense –2.0 –2.3 – V
TOTAL DEVICE POWER CONSUMPTION
ICC Operating (VTx = 3.0 V, IO = 3.0 mA) 14 ICC – 14 17 mA
ICC Operating 14 ICC mA
(VTx = 0 V, IO = 3.0 mA) – 13.5 16
(VTx = 0 V, IO = 0 mA) – 4.5 6.0
Standby Mode (Idle Mode Input = 0 V) 14 ICC – – 1.0 µA

PRIORITY MANAGEMENT TRUTH TABLE

Control Inputs Outputs
Idle Mode Tx Power Control VO Gate Drive
0 0 Off 0.5 V max
1 0 –2.5 or – 4.0 V 0.5 V max
0 1 Off 0.5 V max
1 1 –2.5 or – 4.0 V VCC + 2.7 V min

4 MOTOROLA ANALOG IC DEVICE DATA

 MC33169

PIN FUNCTION DESCRIPTION

Pin Name Description
1 C2 Input This is the positive pin for the charge pump capacitor in the voltage doubler.
2 C1/C2 This is the negative pin for the charge pump capacitors.
3 C1 Input This is the positive pin for the charge pump capacitor in the voltage tripler.
4 VO Output It delivers a regulated negative voltage of –4.0 V or –2.5 V depending on the product version. It can
source an output current in excess of 5.0 mA.

5 VO Charge Pump This is the positive pin for the capacitor in the inverting charge pump.
Capacitor +

6 Gnd This pin is Ground for both signal and power circuitry.
7 VO Charge Pump This is the negative pin for the capacitor in the inverting charge pump.
Capacitor –

8 Gate Drive Output This is the output of the gate amplifier which directly drives the gate of an N–Channel MOSFET. It can
sink and source peak currents up to 3.0 mA.

9 Tx Power Control The input signal applied on this pin controls the N–Channel switching MOSFET in follower mode and
Input therefore, linearly controls the RF output voltage.

10 Sense Input Pin It senses the negative voltage directly on the Power Amplifier. It is also the input pin of an internal
Undervoltage Lockout circuit which blocks the switching of the N–Channel MOSFET if the sensed
voltage is more positive than –3.0 V (–4.0 V version) or –2.0 V (–2.5 V version).
11 VBB Triple This is the positive pin of the output filter capacitor in the voltage tripler. The triple voltage at that pin is
used internally to supply the inverting charge pump and the gate amplifier.

12 VBB Double This is the positive pin of the output filter capacitor in the voltage doubler.
13 Idle Mode Input This pin is used to set the circuit in Low Power Consumption Standby mode. It is CMOS compatible, i.e.
a voltage lower than 0.5 V applied on this pin makes the device go into Standby mode in which the
current consumption is lower than 1.0 µA. The MC33169 is then awakened by a voltage higher than
2.0 V applied on that pin.
14 VCC This is the supply input pin for the MC33169, VCC voltage ranges from 2.7 V to 7.2 V.

Figure 1. MC33169 Representative Block Diagram

C2 C1
VCC
1 2 3 14
Priority
VBB Double Management
Positive VBB Triple
12
Cd Charge Pump 11 + VBattery
Ct

Standby Idle Mode

Positive Circuit 13 Input
Regulator

Oscillator Voltage
Reference

Negative Regulator VGout

(–4.0 or –2.5 V) UVLO
8 VDD

RF In RF Out
Negative Gate 9
Charge Pump Amplifier Tx(on) GaAs
PA

6 Gnd 7 5 VO 4 10 Vsense

Cp Cn

MOTOROLA ANALOG IC DEVICE DATA 5

 MC33169

Figure 2. Operating Current versus Temperature Figure 3. Operating Current versus Temperature
5.0 15
VCC = 4.8 V
4.5 14 VCC = 4.8 V
I CC , OPERATING (mA)

I CC , OPERATING (mA)
4.0 VCC = 2.7 V 13

3.5 12 VCC = 2.7 V

VTx = 0 V
3.0 IO = 0 mA 11 VTx = 0 V
IO = 0 mA
2.5 10
–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

Figure 4. Operating Current versus Temperature Figure 5. Operating Current versus Temperature
16 8.0
VCC = 4.8 V VTx = 3.0 V
7.6
I CC , OPERATING (mA)

I CC , OPERATING (mA)
15

VCC = 2.7 V 7.2

14 VTx = 0 V
6.8

VTx = 3.0 V VCC = 2.7 V

13
IO = 3.0 mA 6.4 IO = 1.0 mA

12 6.0
–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

Figure 6. Output Voltage versus Temperature Figure 7. Output Voltage versus Temperature
–4.04 –4.04
–4.035 ISS = 3.0 mA
VSS, OUTPUT VOLTAGE (V)

–4.02
–4.03 ISS = 1.0 mA
OUTPUT VOLTAGE (V)

–4.025 –4.0
–4.02 ISS = 3.0 mA

–4.015 –3.98
VCC = 2.7 V VCC = 4.8 V
–4.01
–3.96
–4.005

–4.0 –3.94
–50 –25 0 25 50 75 100 –50 –25 0 25 50 75 100
TA, AMBIENT TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C)

6 MOTOROLA ANALOG IC DEVICE DATA

 MC33169

Figure 9. VTx Control Voltage versus Gate

Figure 8. Output Voltage versus Load Current Drive Output Voltage
–4.04 8.0

VGO, GATE DRIVE OUTPUT VOLTAGE (V)

7.0
–4.035
6.0
OUTPUT VOLTAGE (V)

25°C
–4.03 –25°C
0°C 5.0

–4.025 85°C 4.0

3.0
–4.02
2.0
–4.015
1.0

–4.01 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0
LOAD CURRENT (mA) VTx, POWER CONTROL INPUT VOLTAGE (V)

OPERATING DESCRIPTION
The MC33169 is a power amplifier support IC that is
designed to properly switch “on” or “off” a MESFET Power
Amplifier either manually or by microprocessor. Controlling
the power drain of the RF Amplifier extends operating battery
life in many portable systems.
Outputs
The IC is designed to provide a –4.0 V or –2.5 V bias to
the gate of the RF Ampllifier MESFET devices prior to
application of a positive battery voltage to the drain. The
negative output voltage can provide up to 5.0 mA of current.
The positive voltage control requires an external
N–Channel logic level MOSFET, connected as a source
follower. The Gate Drive Output, Pin 8, can source or sink
3.0 mA to the external MOSFET. The low drive current slows
the MOSFET switching speed, thereby minimizing voltage
glitches on the VCC line which could cause disturbances to
other circuitry.
Inputs
A Sense Input, Pin 10, protects the Power Amplifier load
by monitoring the level of the negative output voltage. If the
negative voltage magnitude falls below a preset level, 3.2 V
typical for the –4.0 V version or 2.3 V for the –2.5 V version,
an undervoltage lockout circuit disables the external
MOSFET gate drive.
The Tx Power Control Input controls the N–Channel
external switching MOSFET in source follower mode, which
allows linear control of the RF Output voltage level.
The Idle mode input is CMOS compatible, allowing the RF
Amplifier to be placed in a standby mode, drawing less than
1.0 µA from the power source.

MOTOROLA ANALOG IC DEVICE DATA 7

 MC33169

Figure 10. Class 4 GSM with a Two–Stage Integrated Power Amplifier (I.P.A.)
VBatt
= 4.8 V Tx Power
(4 cells Control
3.0 V NlCd/NIMH) Input 3.0 V
Idle MMSF4N01HD
0V 0V
100
5 G 4
C2 0.1 6 S 3
1 14
7 Drain S 2
2 13 68 8 1
C1 0.1 C3 1.0
3 12
Ci 0.22 100 C4 1.0
4 MC33169 11
MMBD701
LT1 5 10

Cp 1.0 6 9
9 MRF IC 093 8
7 8
10 7
.047 47 pF 47 pF .047
11 6
3.3 k 2 mm 4 mm 47 pF
VG2 tune 12 Out 5
1.0 k 30 Ω 30 Ω 50 Ω Out
VG1 tune
13 Out 4 5.6 pF 5.6 pF
14 3
8.2 nH
50 Ω In 15 In 2
Cf
16 1 0.22
6.8 pF RF
330
Grounded Backside
– 4.0 V

Figure 11. Transfer Characteristic for

Gate Drive Output
1.4

1.2
VBatt = 4.8 V
1.0 Pin = 10 dBm
IPA RF OUT (Vrms)

VIdle = 3.0 V
0.8
Vramp: 40 Hz sinusoidal voltage
0.6
set for 95% AM depth on RF
TA = 25°C
0.4 VBatt = 4.8 V
VIdle = 3.0 V Peak output
0.2 power: 34.6 dBm

0
0 0.5 1.0 1.5 2.0 2.5
VTx (V)

8 MOTOROLA ANALOG IC DEVICE DATA

 MC33169
CURVES RELATED TO APPLICATION GSM CLASS 4

Figure 12. RF Output Voltage (40 Hz/95% AM) and Figure 13. Idle, PA Drain, RF Output and VO
VTx Driving Voltage Voltages During a Burst Period
Output RF Idle Voltage
Voltage
VTx
VTx AND RF OUTPUT (V)

0V

VTx 0V

VT 0V
Negative Output RF Voltage
VO
Voltage
–0 V
–50 ms –25 ms 0s –350 µs 150 µs 850 µs
TIMEBASE = 5.0 ms/DIV TIMEBASE = 5.0 µs/DIV
VERTICAL SCALE = 0.5 V/DIV VERTICAL SCALE = 0.5 V/DIV

Figure 14. RF Output Voltage, PA Drain Voltage Figure 15. RF Output Voltage, PA Drain Voltage and
and VTx Driving Voltage, During Fall Time VTx Driving Voltage, During Rise Time

VTx

VTx

PA Drain
Voltage
PA Drain
Voltage
Output
RF Voltage
Output
RF Voltage

–13.4 µs 11.6 µs 36.6 µs –13.4 µs 11.6 µs 36.6 µs

TIMEBASE = 5.0 µs/DIV VERTICAL SCALE = 0.5 V/DIV
VERTICAL SCALE = 0.5 V/DIV

MOTOROLA ANALOG IC DEVICE DATA 9

 MC33169

Figure 16. AMPS version with MRFIC0913, Integrated Power Amplifier (I.P.A.)
VBatt
= 3.6 V Tx Power
(3 cells Control
3.0 V NlCd/NIMH) Input 3.0 V
Idle MMSF4N01HD
0V 0V
100
5 G 4
C2 0.1 6
1 14
S 3
7 Drain S 2
2 13 68 8 1
C1 0.1 C3 1.0
3 12
Ci 0.22 100 C4 1.0
4 MC33169 11
MMBD701
LT1 5 10

Cp 1.0 6 9
9 MRFIC0913 8
7 8
10 7
.047 68 pF 68 pF .047
11 6
3.3 k 2.5 mm 7 mm 68 pF
VG2 tune 12 Out 5
1.0 k 30 Ω 30 Ω 50 Ω Out
VG1 tune
13 Out 4 5.6 pF 5.6 pF
14 3
10 nH
50 Ω In 15 In 2
Cf
16 1 0.22
6.8 pF Rf
330
Grounded Backside

– 4.0 V

Figure 17. MC33169 with GaAs RF Power Amplifier

Tx Power
Control
3.0 V VBatt Input 3.0 V
Idle MMSF4N01HD
0V 0V
100
5 G 4
C2 0.1 6 S 3
1 14
7 Drain S 2
2 13 68 8 1
C1 0.1 C3 1.0
3 12
Ci 0.22 100 C4 1.0
4 MC33169 11
MMBD701
LT1 5 10

Cp 1.0 6 9 VDD
RF In RF Out
7 8 50 Ω In 50 Ω Out

GaAs Power Amplifier

VO

Cf
0.22 Rf
330

– 4.0 V

10 MOTOROLA ANALOG IC DEVICE DATA

 MC33169

OUTLINE DIMENSIONS
DTB SUFFIX
PLASTIC PACKAGE
CASE 948G–01
(TSSOP–14)
ISSUE O

14X K REF NOTES:

1 DIMENSIONING AND TOLERANCING PER ANSI
0.10 (0.004) M T U S V S Y14.5M, 1982.
2 CONTROLLING DIMENSION: MILLIMETER.
0.15 (0.006) T U S 3 DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
N (0.006) PER SIDE.
0.25 (0.010)
14 8 4 DIMENSION B DOES NOT INCLUDE INTERLEAD
2X L/2 FLASH OR PROTRUSION. INTERLEAD FLASH OR
M PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
L B 5 DIMENSION K DOES NOT INCLUDE DAMBAR
–U– N PROTRUSION. ALLOWABLE DAMBAR
PIN 1 PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
IDENT. F EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
1 7 6 TERMINAL NUMBERS ARE SHOWN FOR
DETAIL E REFERENCE ONLY.
7 DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
0.15 (0.006) T U S K

ÉÉ
ÇÇ
A MILLIMETERS INCHES
–V– K1 DIM MIN MAX MIN MAX

ÇÇ
ÉÉ
A 4.90 5.10 0.193 0.200
B 4.30 4.50 0.169 0.177

ÇÇ
J J1 C ––– 1.20 ––– 0.047
D 0.05 0.15 0.002 0.006
F 0.50 0.75 0.020 0.030
SECTION N–N G 0.65 BSC 0.026 BSC
H 0.50 0.60 0.020 0.024
J 0.09 0.20 0.004 0.008
J1 0.09 0.16 0.004 0.006
C –W– K 0.19 0.30 0.007 0.012
K1 0.19 0.25 0.007 0.010
0.10 (0.004) L 6.40 BSC 0.252 BSC
M 0_ 8_ 0_ 8_
–T– SEATING D G H DETAIL E
PLANE

MOTOROLA ANALOG IC DEVICE DATA 11

 MC33169

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.

How to reach us:

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INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

*MC33169/D*
12 ◊ MC33169/D
MOTOROLA ANALOG IC DEVICE DATA