2

SECTION A: 10 OBJECTIVE QUESTIONS

1. The current flowing through a heating element is 5 A when a potential difference of 35 V

is applied across it. Find the resistance of the element.
A. 18 Ω
B. 7Ω
C. 6Ω
D. 10 Ω

2. Select the answer below that fit the definition of BRANCH.

A. Represents a point that joins the circuit element.
B. Represents any element in the same loop in a circuit.
C. Represents a single two-terminal element in a circuit.
D. All points on the node have the same voltage.

3. Define the meaning of EXTRINSIC material.

A. Extrinsic is a pure semiconductor material.
B. Extrinsic is a semiconductor material that has a very low level of impurities.
C. Extrinsic is a semiconductor that has been subjected to a doping process and is no
longer pure.
D. Doping is the process of adding impurity atoms to intrinsic material to improve the
resistivity of the semiconductor.

4. Fine incorrect statement for the n-type material

A. N stands for the negative charge of electrons.

B. The n-type material is created by introducing those impurity elements that have five
valence electrons (pentavalent).
C. The elements most frequently used as doping for n-type material are boron,
antimony, and arsenic.
D. In an n-type material the electron is called the majority carrier and the hole the
minority carrier.
 3

5. From the list below, identify the components of a power supply.

i. Rectifiers
ii. Filters
iii. Voltage regulator

A. i and ii
B. i, ii and iii
C. i and iii
D. ii and iii

6. In a PNP transistor, the current carriers are ………….

A. accepter ions
B. donor ions
C. free electrons
D. holes

7. The transistor arrangement in Figure 1 is …………… arrangement.

A. common base
B. common emitter
C. common collector
D. none of the above

Figure 1
 4

8. Referring to the transistor symbol diagram in Figure 2 which terminal is the collector?

A. P
B. Q
C. R
D. R and P

Figure 2

9. Which diagram shows an n-p-n transistor operating in forward bias?

A.

B.

C.
 5

10. A bipolar junction transistor (BJT) is a type of transistor. BJT acts as a switch at …………

i) cut-off region
ii) saturation region
iii) active region

A. i and ii
B. ii and iii
C. iii
D. i, ii and iii

[CO1/PO1/C2] (10 marks)

(Each question – 1 mark)

SECTION B: 2 SUBJECTIVE QUESTIONS

QUESTION 1

(a) A series-parallel circuit is shown in Figure Q1(a). Given that the resistance for
R1 = 5 Ω, R2 = 16 Ω, R3= 60 Ω, R4 = 40 Ω, R5 = 10 Ω, R6 = 18 Ω, R7 = 20 Ω,
R8 = 30 Ω, R9 = 30 Ω, R10 = 60 Ω, R11 = 15 Ω, R12 = 10 Ω, R13 = 22.8 Ω and R14
= 15 Ω respectively. Find,

i) the total resistance, Rab

[CO2/PO2/C4] (6 marks)
ii) the value of current, Is
[CO2/PO2/C4] (2 marks)
iii) the voltage across R14
[CO2/PO2/C4] (2
marks)
 6

Figure Q1(a)

(b) Solve the following question:

i) Calculate the value of Vo and ID for the diode configuration shown in Figure Q1(b)(i).
[CO2/PO2/C4] (5 marks)

Figure Q1(b)(i)
 7

ii) For the voltage regulator circuit shown in Figure Q1(b)(ii), determine the range of
Vi, that will maintain the Zener diode in the ‘ON’ state.
[CO2/PO2/C4] (5 marks)

Figure Q1(b)(ii)

QUESTION 2

(a) A schematic diagram of a Bipolar Junction Transistor (BJT) amplifier circuit is shown in
Figure Q2(a). Given that its resistances are R1 = 8.2k Ω , R2 = 9.1k Ω , RC = 0.5k Ω and
RE = 0.68k Ω respectively. The capacitance for C1, C2 and C3 is set at 10µF and the
DC voltage at the collector terminal is 20V. The amplification factor, β for this circuit is
120. By using suitable circuit analysis procedures, determine

i) the type of configuration and analysis method

[CO2/PO2/C4] (2
marks)
ii) the Collector current, IC and Emitter current, IE
[CO2/PO2/C4] (2 marks)
iii) the Base voltage, VB and Emitter voltage, VE
[CO2/PO2/C4] (2 marks)
iv) the Output voltage, VCE
[CO2/PO2/C4] (2 marks)
v) the Q-point of the circuit by load line analysis.
[CO2/PO2/C4] (2 marks)
 8

Figure Q2(a)

(b) By using the DC analysis results of Q2(a) and proceed with AC analysis of the BJT
amplifier circuit, determine

i) the AC equivalent circuit

[CO2/PO2/C4] (2 marks)
ii) the dynamic emitter resistance, re
[CO2/PO2/C4] (2 marks)
iii) the input impedance, Zi and output impedance, Zo
[CO2/PO2/C4] (2 marks)
iv) the voltage gain, AV
[CO2/PO2/C4] (2 marks)
v) the current gain, Ai
[CO2/PO2/C4] (2 marks)

such that the Emitter resistance, RE is bypassed and ro is 50k Ω .

 2

SECTION A: 10 OBJECTIVE QUESTIONS

1. Find the potential difference which must be applied to a 5 kΩ resistor such that a current
of 6 mA may flow.
A. 30 V
B. 7Ω
C. 6Ω
D. 10 Ω

2. Select the answer below that fit the definition of NODE.

A. Represents any element that connection between two nodes.
B. Represents any element that starts and ends at the same node in the circuit.
C. Represents a point that joins the circuit element. All points on the node have the
same voltage.
D. Elements that are connected to the same node will have the same current.

3. Define the meaning of semiconductor..

A. Semiconductor is a conductor material.
B. Semiconductor is an insulator material.
C. Semiconductor is neither a conductor nor an insulator but rather halfway in
between the two.
D. The resistive properties of a semiconductor are similar to a conductor.

4. Fine incorrect statement for the p-type material

A. P stands for positive charge of holes.

B. P is created by adding with three valence electrons into pure Si and Ge base.
C. The elements most frequently used as doping for p-type material are phosphorus,
gallium, and indium.
D. In a p-type material the hole is the majority carrier and the electron is the minority
carrier.
 3

5. From the list below, identify the type of transformer.

i. step up transformer
ii. step down transformer
iii. solation transformer

A. i and ii
B. i, ii and iii
C. i and iii
D. ii and iii

6. In a NPN transistor, the current carriers are ………….

A. accepter ions
B. donor ions
C. free electrons
D. holes

7. Bipolar Junction Transistor “BJT” consist of

A. two terminals
B. three terminals
C. four terminals
D. five terminals
 4

8. The transistor arrangement in Figure 1 is …………… arrangement.

A. common base
B. common emitter
C. common collector
D. none of the above

Figure 1

9. Which diagram shows an n-p-n transistor operating in reverse bias?

A.

B.

C.
 5

10. A bipolar junction transistor (BJT) is a type of transistor. How BJT acts at saturation
region?

A. Acts as an amplifier
B. Acts like a short circuit
C. Acts like an open circuit
D. As an rectifier

[CO1/PO1/C2] (10 marks)

(Each question – 1 mark)

SECTION B: 2 SUBJECTIVE QUESTIONS

QUESTION 1

(a) A series-parallel circuit is shown in Figure Q1(a). Given that the resistance for
R1 = 5 Ω, R2 = 16 Ω, R3= 60 Ω, R4 = 40 Ω, R5 = 10 Ω, R6 = 18 Ω, R7 = 20 Ω,
R8 = 30 Ω, R9 = 30 Ω, R10 = 60 Ω, R11 = 15 Ω, R12 = 10 Ω, R13 = 22.8 Ω and R14
= 15 Ω respectively. Find,

i) the total resistance, Rab

[CO2/PO2/C4] (6 marks)
ii) the value of current, Is
[CO2/PO2/C4] (2 marks)
iii) the voltage across R14
[CO2/PO2/C4] (2
marks)
 6

Figure Q1(a)

(b) Solve the following question:

i) Calculate the value of Vo and ID for the diode configuration shown in Figure Q1(b)(i).
[CO2/PO2/C4] (5 marks)

Figure Q1(b)(i)
 7

ii) For the voltage regulator circuit shown in Figure Q1(b)(ii), determine the range of
Vi, that will maintain the Zener diode in the ‘ON’ state.
[CO2/PO2/C4] (5 marks)

Figure Q1(b)(ii)

QUESTION 2

(a) A schematic diagram of a Bipolar Junction Transistor (BJT) amplifier circuit is shown in
Figure Q2(a). Given that its resistances are RB = 270k Ω and RC = 1.7k Ω respectively.
The capacitance for C1 and C2 is set at 10 µF and the DC voltage at the collector
terminal is 20 V. The amplification factor, β for this circuit is 120. By using suitable circuit
analysis procedures, determine

i) the type of BJT configuration

[CO2/PO2/C4] (1
marks)
ii) the input current, IB and output current, IC
[CO2/PO2/C4] (2 marks)
iii) the VBE value and output voltage, VCE
[CO2/PO2/C4] (2 marks)
iv) the terminal voltage, VB and VC
[CO2/PO2/C4] (2 marks)
v) the Q-point of the circuit by load line analysis.
[CO2/PO2/C4] (3 marks)
 8

Figure Q2(a)

(b) For the circuit stabilization, a resistor of 1.8k Ω is added at the emitter terminal. Thus,
proceed with the AC analysis of the BJT amplifier circuit, determine

i) the AC equivalent circuit

[CO2/PO2/C4] (2 marks)
ii) the dynamic emitter resistance, re
[CO2/PO2/C4] (2 marks)
iii) the input impedance, Zi and output impedance, Zo
[CO2/PO2/C4] (2 marks)
iv) the voltage gain, AV
[CO2/PO2/C4] (2 marks)
v) the current gain, Ai
[CO2/PO2/C4] (2 marks)

such that the BJT’s output resistance, ro is infinity.