NARAYANA ENGINEERING COLLEGE: NELLORE/GUDUR

DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING

SUB: ELECTRONIC DEVICES AND CIRCUITS
STAFF:
YEAR&BRANCH: II ECE/EEE/EIE

OBJECTIVE QUESTIONS __________________

UNIT-I
1. Zener diodes are primarily used as [ ]
a) Amplifiers b) voltage regulators c) rectifiers d) oscillators
2. The element having four valance electrons is [ ]
a) Gallium b) boron c) Germanium d) Aluminium
3. The PN juction diode used as [ ]
a) Rectifier b) clipper c) Clamper d) all of the above
4 The expression for diode current equation is [ ]
a) I=I0(1+ eV/VT) b) I=I0(1- eV/ήVT )
c) Io=I(1-eV) d) I=I0(eV/ήVT -1)
5 Which of the following is intrinsic semiconductor [ ]
a) Aluminum b) Boron
c) Arsenic d) Germanium
6.The Cut in voltage of Germanium diode is [ ]
a) 0.486V b) 0.7V c) 0.3V d) 1.1V
7. The zener effect for BZX5.1V diode is valid at_____ [ ]
a) 6.1V b) 6V c) 5.1V d) 10.2V
8. The element that doesn’t have three valence electrons is_______ [ ]
a) Boron b) aluminum c) germanium d) gallium
9. The forbidden energy gap for germanium is____ [ ]
a) 0.12eV b) 0.32eV c) 0.72eV d) 0.92eV
10. The Cutin voltage of Si diode is [ ]
a)0.7 V b) 0.3V c) 1.1 V d) 0.1 V
11. Which of the following materials can be used to make a LED [ ]
a) Silicon b) Germanium c) Boron d)Phosphorescent materials

12. At 300c the reverse saturation current in PN junction is 5 µA .Find its value at 400c
a) 20 µA b) 10 µA c) 50 µA d) 100 µA [ ]
13. For every 10 degrees of temperature the reverse leakage current _____ in diode
a) constant b) half c) doubles d) triple
14. Which of the following device convers light energy to electrical energy [ ]
a) Zener diode b) LED c) Photo diode d) Varactor diode
15.Which of the following device is heavily doped [ ]
a) Varactor diode b)photo diode c) Tunnel diode d)LED
16. Other name for Tunnel diode is [ ]
a) ESAKI diode b) POWER diode c) JENPACT diode d) Vericaps
17. Which of he following Diode has negative resistance region characteristics [ ]
a) Zener diode b) Tunnel diode c) photo diode d) LED
18. Which of the following semiconductor device has negative resistanec characteristics [ ]
a) BJT b) FET c) UJT d) SCR
19. Which of the following is power electronic device [ ]
a) Zener Diode b) SCR c) Varactor diode d) FET
20. Which of the following is called double based diode [ ]
a) LED b) UJT c) SCR d) Tunnel diode

UNIT-II

1. A rectifier is used to
a) convert AC voltage to DC voltage b) convert DC voltage to AC voltage [ ]
c) regulate voltage b) amplify voltage
2.The PIV of Bridge rectifier [ ]
a)Vm b) 2Vm c)3Vm d) Vm/2
3. The TUF of Half wave rectifier [ ]
a) 0.48 b) 1.21 c)0.68 d) 0.81
4. Ripple factor of a full-wave rectifier is [ ]
a) 1.21 b) 0.482 c) 0.406 d) 0.121
5.The ideal Efficiency of Bridge rectifier [ ]
a) 40.6% b)81.2% c) 68.2% d) 50%
6 .In a full wave rectifier the Vs(r.m.s) is 15V then find the max voltage Vm [ ]
a) 15V b) 7.5V
c) 21.21V d) 30V
7. The efficiency of a full-wave rectifier is
a) 40.6% b)81.2% c) 1.12% d) 48.2% [ ]
8. The efficiency of a half wave rectifier is [ ]
a) 40.6٪ b) 81.2٪ c) 1.12٪ d) 48.2٪
9. The ripple factor of inductor filter is [ ]
a) R∟ω/√2√3Lb) R∟/√2√3L c) R∟/3√2 ωL d) R∟/√3 2 ωL
10. The PIV of a full wave rectifier is [ ]
a) Vm b)2Vm c) Vm/2 d) 3Vm
11. The ripple factor of capacitor filter is [ ]
a) 1/4√3 fC R∟ b) 1/4√3 C R∟ c) 1/4√2 fCR∟d) 1/6√3 fC R∟
12.The form factor of a bridge rectifier is [ ]
a)1.57 b)0.482 c)0.812 d)1.11
13.The average value of DC current for half wave rectifier is [ ]
a)Im/2 b) Im/π c) 2Im/π d) Im/√2
14. Transformer utilization factor of half wave rectifier is [ ]
a) 0.693 b) 0.812 c) 0.287 d) 0.406
15. Bridge rectifier requires [ ]
a) 2 diodes b) 3 diodes c)4 diodes d) 8diodes
16. The PIV of a half wave rectifier is [ ]
a) Vm b)2Vm c) Vm/2 d) 3Vm
17. Transformer utilization factor of center tapped full wave rectifier is [ ]
a) 0.693 b) 0.812 c) 0.287 d) 0.406
18. The form factor of a half wave rectifier is [ ]
a) 1.57 b) 0.482 c)0.812 d)1.11
19. The peak factor of a half wave rectifier is [ ]
a)1.57 b)2 c) 1.414 d)1.11
20. The peak factor of a full wave rectifier is [ ]
a) 1.57 b) 2 c) 1.414 d)1.11
. UNIT-III

1. The transistor used as an amplifier in [ ]

a) Active region b) cutoff region c) saturation region d) breakdownregion

2. which of the following is unipolar device [ ]

a) BJT b)JFET c)SCR d) UJT
3. PNP transistor is [ ]
a) Voltage controlled device b) Unipolar device c) current controlled device d) high input impedance

4. In a transistor the region that is very lightly doped and very thin is the [ ]
a) Emitter b) base c) collector d) Drain
5. In an NPN transistor when the emitter junction is forward biased and the collector junction
is reverse biased, the transistor will operate in [ ]
a) Active region b) saturation region c) cutoff region d) inverted region
6. The arrow head on a transistor symbol indicates [ ]
a) Direction of electron current in the emitter b) Direction of hole current in the emitter
c) Diffusion current in the emitter d) Drift current in the emitter
7. The largest current flow of a bipolar transistor occurs [ ]
a) In emitter b) in base c) in collector d) through emitter
8. A JFET has a [ ]
a) Very high input resistance b) very low input resistance
c) High connection emitter junction d) forward biased PN junction
9. Base to emitter voltage VBE is forward biased transistor decreases with increase of
temperature at ___mv/º c [ ]
a) 0.6 b) 2.5 c) 0.25 d) 25
10. Which of the following h-parameters calculated from input characteristics of BJT [ ]
a) hi ,hr b) hi ,hf c)hf,ho d) hr,hr

11. The current gain is more in [ ]

a)CB configuration b)CE configuration c) CC configuration d) CG configuration
12) what is the relation between current gains ∞,β and γ is [ ]
a) ∞ = β γ b) ∞ = β / γ c) ∞ β = γ d) ∞ β γ =1
13) Transistor acts as ON switch in the following operating region [ ]
a) Active b) Saturation c) cutoff d) breakdown
14) If a 2 mV signal produces a 2 V output, what is the voltage gain? [ ]
a) 100 b) 0.001 c) 1000 d) 0.004
15. The current gain in CB configuration is Ic/ IE is denoted with [ ]
a) alpha b) theta c) beta d) omega
16. A transistor may be used as a switching device or as a [ ]
a) tuning divice b) fixed resistor c) rectifier d) variable resister
17. The Common collector configuration is used for [ ]
a) Pre amplifier b) Impedance matching c) Voltage amplifier d) rectifier
18. When transistors are used in digital circuits they usually operate in the [ ]
a) break down region b) linear region
c) active region d) saturation and cutoff regions
19. Junction Field Effect Transistors (JFET) contain how many diodes ? [ ]
a) 4 b) 3 c) 2 d) 1
20. which of the following statement is correct in FET parameters gm,rd,µ

a) gm= rd,µ b) gmrd =µ c) gm=rd/µ d) gm= rd+µ [ ]

UNIT-IV
1. The Q point on a load line may be used to determine: [ ]
a) Vcc b) Vc c) Ic d) Vb
2. The stability factor of a fixed bias is [ ]
a) 1+β b) 1-β c) β /(1-β) d) 1/(1-β)
3. Stability’ S’ is approximately unity for [ ]
a) collector-base bias b) fixed bias c) self bias d) none
4.. In thermistor compensation technique thermister is connected parallel with [ ]
a) Collector resistance b) emitter resistance c) base to ground d) base to Vcc
5. Voltage-divider bias provides [ ]
a) A stable ‘Q’ point b) a Q point that easily changes in the transistor’s current gain
c) A Q point that is stable and easily changes in the transistor’s current gain
d) An unstable ‘Q’ point
6. In a transistor, collector current is controlled by [ ]
a) collector resistance b) base current c) collector voltage d) emitter current
7. Which of the following has a negative temperature co-efficient [ ]
a) thermistor b) sensistor c) resistor d) thyristor
8. The Q point of a transistor biasing current implies [ ]
a) zero bias b) no output c) no distortion d) no input signal
9. The biasing method which is considered independent of transistor βdc is [ ]
a) fixed bias b) collector feedback bias
c) voltage divider bias d) base bias with collector feedback
10. The best location for setting a Q point on dc load line of a FET amplifier is [ ]
a) saturation point b) mid-point c) cut-off point d)
11. The operating point variation is due to [ ]
a) ICO b) VBE c) β d) all
12. For normal amplification, the Q point should be established in the [ ]
a) Active region b) saturation region c) cut off region d) None
13. Thermal runaway occurs when [ ]
a) collector is reverse biased b) transistor is not biased
c) Emitter is forward biased d) junction capacitance is high
14. The power transistors the heat developed at the the collector junction may be
removed by the use of [ ]
a) Heat sink b) transistor with high β c) transistor with low β d) None
15. The resistance of thermistor decreases exponancially with [ ]
a) increase of temperature b) decrease of temperature
c) increase of current b) decrease of voltage
16. The early effect in BJT is caused due to [ ]
a) slow turn off b) fast turn off c) break down d) none
17. In fixed bias circuit if the base resister is shorted then [ ]
a) the transistor may get damaged b) the base voltage is zero
c) the collector voltage will be the supply voltage d) the collector current is zero
18. Sensistor having __________ temperature coefficient [ ]
a) positive b) negative c) zero d_nutral
19. Thermistor having ________ temperature coefficient [ ]
a) positive b) negative c) zero d_nutral
20. The self bias arrangement gives an improved Q point stability when [ ]
a) RE is low b) β is small but REβ large
c) both β and RE are large d) both β and RE are large
 UNIT-V
1. What is the phase difference between input and output signal in CE amplifier [ ]
a)0º b)45º c)180º d)90º
2. The voltage gain of CC amplifier is___ [ ]
a) < 1 b) >1 c) =1 d)Zero
3. The phase shift between output and input currents in amplifier [ ]
a) 180º b) 90º c) 0º d) 60º
4. Which of the following is known as emitter follower [ ]
a) CE b) CC c) CB d) CG
5 Which of the following is used for impedance matching [ ]
a)CE b) CB c)CC d) Cascade
6. Which of the following amplifier preferred at out put stages [ ]
a) CE b) CC c) CB d) CS
7. Which of the following is normally used in intermediate stages? [ ]
a) CE b) CB c) CC d) None
8. The simplified h-parameter model represents in terms of ____ [ ]
a)hi,hf b) hi,ho c) hf,hr d) hf,ho
9. The current gain Ai in CC amplifier using simplified h-parameter model is given by [ ]
a) 1 b) 1+hfe c) hfe/1+hfe d) 1/ hfe
10. The BJT amplifier which is having the highest output resistance is____ [ ]
a)CE b) CB c) CC d) None

11. A Transistor has hfe = 100, then its hfc will be______ [ ]
a) 1/100 b) 1 c) 101 d) 50

12.Which of the following configurations has the lowest output impedance? [ ]

a) CB b) CE c) emitter follower d) CG
13.In BJT the following are dependent variables _____ [ ]
a)Input voltage, out put current b) input voltage,output voltage
c) input and output currents d) out put voltage, output current
14. In CE amplifier stage on introducing a resistor RE in emitter circuit the input resistance____
a) increases b) decreases c) remain constant d) increases and then decreases [ ]
15. With source resistance of 1kΩ the output Impedance of CE amplifier is of order of______[ ]
a) kilo ohm b) mega ohm c) ohm d) giga ohm
16. In which of the amplifier power gain is high [ ]
a) CB b) CE c) CC d) CD
17. The highest voltage gain of transistor amplifier is ____________ [ ]
a) CE b) CB c) CC d) CS
18. Parameter hie of typical transistor is of order of _____ ohm [ ]
a) 1 b) 1000 c) 100 d) 10000
19. The input impedance of CB amplifier using approximate h-parameter model Ri = ________ [ ]
a) hie b) hie/(1+hfe ) c) 1/ hie d) 1mega ohm
20. The general expression for Voltage gain in BJT amplifier Av = [ ]
a) Ai.RL/Ri b) Ai.RL c) Ai.Ri d) RL/Ri