ARUL INSTITUTE, CHENNAI

CBSE – CLASS XII – PHYSICS – CHAPTER 14

SEMICONDUCTOR ELECTRONICS

CBSE BOARD QUESTIONS

1. In an n-type semiconductor, the donor energy level lies

(a) at the centre of the energy gap (b) just below the conduction band

(c) just above the valence band (d) in the conduction band

2. In a p-type semiconductor, the acceptor energy level lies

(a) at the centre of the energy gap (b) just below the conduction band

(c) just above the valence band (d) in the conduction band

3. The barrier potential of a p-n junction depends on

(a) type of semiconductor material (b) amount of doping

(c) temperature (d) all of these

4. At equilibrium, in a p-n junction diode the net current is

(a) due to diffusion of majority charge carriers

(b) due to drift of minority charge carriers

(c) zero as diffusion and drift currents are equal and opposite

(d) zero as no charge carriers cross the junction

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5. Which one of the following is wrong with respect to forward biasing of p-n junction?

(a) Low resistance offered at junction (b) Width of the depletion region decreases

(c) Effective barrier potential increases (d) High current flows through the circuit

6. The dominant mechanisms for motion of charge carriers in forward and reverse biased

silicon pn junctions are

(a) drift in forward bias, diffusion in reverse bias

(b) diffusion in forward bias, drift in reverse bias

(c) diffusion in both forward and reverse bias

(d) drift in both forward and reverse bias

7. Which one of the following represents forward bias diode?

(a) –4V –3V (b) –2V +2V

(c) 0V –3V (d) 2V 3V

8. In an unbiased p-n junction, electrons diffuse from the n-region to p-region because of

(a) the attraction of holes of p-region

(b) the potential difference across the p-n junction

(c) the higher hole concentration in p-region than that in n-region

(d) the higher electron concentration in n-region than that in p-region

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9. The circuit shown in the figure has two oppositely connected ideal diodes connected in

parallel. Find the current flowing through each diode in the circuit.

2Ω D2

D1 3Ω

4Ω
12 V

Solution:

Since the diode D1 is reverse biased, it offers an infinite resistance. So no current flows in

the branch of diode D1.

Since the diode D2 is forward biased, it offers negligible resistance in the circuit. So the

current flows in the branch of diode D2.

V 12 12
I= = = =2A
R eq 2+4 6

10. When a voltage drop across a pn junction diode is increased from 0.70 V to 0.71 V, the

change in the diode current is 10 mA. What is the dynamic resistance of diode?

Solution:

∆V 0.71 − 0.70 0.01

rd = = −3
= −2 = 1 Ω
∆I 10 x 10 10
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11. Assuming that the two diodes D1 and D2 used in the electric circuit shown in the figure

are ideal, find out the value of the current flowing through 1 Ω resistor.

D1 2Ω

D2 2Ω

1Ω

6V

Solution:

Since the diode D1 is forward biased, it offers negligible resistance in the circuit. So the

current flows in the branch of diode D1.

Since the diode D2 is reverse biased, it offers an infinite resistance. So no current flows in

the branch of diode D2.

The value of the current flowing through 1 Ω resistor is

V 6 6
I= = = =2A
R eq 2+1 3

12. In the following diagram, is the junction diode forward biased or reverse biased?

+5V

Solution:

Since the voltage at p-side is less than the voltage at n-side of the diode, it is reverse biased.
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13. Draw V–I characteristics of a p-n junction diode. Answer the following questions, giving

reasons.

(i) Why is the current under reverse bias almost independent of the applied potential

upto a critical voltage?

(ii) Why does the reverse current show a sudden increase at the critical voltage?

Solution:

V–I Characteristics of a diode

(i) The reverse current is due to minority charge carriers and even a small voltage is

sufficient to sweep the minority carriers from one side of the junction to the other

side of the junction. The current is not limited by the magnitude of the applied

voltage but it is limited due to the concentration of the minority carrier on either

side of the junction.

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(ii) At the critical voltage, the minority carriers acquire sufficient kinetic energy and

collide with valence electrons. So, a large number of covalent bonds break, resulting

in enormous flow of free electrons and holes. Thus there is a sudden increase in the

current at the critical voltage.

14. How does the width of a depletion region of a pn junction vary if doping concentration is

increased?

Solution:

As doping increases, the concentration of holes and free electrons will be more in p-type

and n-type semiconductors respectively.

When the electrons move from n-side to p-side by diffusion, they recombine with the

positive ions in the depletion region and make them as neutral atoms.

Similarly, when the holes move from p-side to n-side by diffusion, they recombine with

the negative ions in the depletion region and make them as neutral atoms.

Thus, the width of a depletion region of a pn junction decreases if doping concentration

is increased.
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15. Distinguish between intrinsic and extrinsic semiconductors.

Intrinsic Semiconductors Extrinsic Semiconductors

These are semiconducting tetravalent

These are pure semiconducting
crystals doped with pentavalent (or)
tetravalent crystals
trivalent impurities

Their electrical conductivity is low Their electrical conductivity is high

There is permitted energy state of the

There is no permitted energy state
impurity atom between valence and
between valence and conduction bands
conduction bands

16. Distinguish between intrinsic semiconductor and p-type semiconductor.

Intrinsic Semiconductor p-type Semiconductor

It is a impure semiconductor i.e. doped

It is a pure semiconductor
with trivalent impurity

The number of free electrons is equal The number of holes is very much
to the number of holes greater than the number of free electrons
ne = nh nh >> ne

Its electrical conductivity is low Its electrical conductivity is high

Electrical conductivity depends on Electrical conductivity depends on

temperature temperature and dopant concentration

There is no permitted energy level There is a acceptor energy level just

between valence and conduction bands above the valence band
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17. Distinguish between intrinsic semiconductor and n-type semiconductor.

Intrinsic Semiconductor n-type Semiconductor

It is a impure semiconductor i.e. doped

It is a pure semiconductor
with pentavalent impurity

The number of free electrons is equal The number of free electrons is very
to the number of holes much greater than the number of holes
ne = nh ne >> nh

Its electrical conductivity is low Its electrical conductivity is high

Electrical conductivity depends on Electrical conductivity depends on

temperature temperature and dopant concentration

There is no permitted energy level There is a donor energy level just below
between valence and conduction bands the conduction band

18. Distinguish between p-type semiconductor and n-type semiconductor.

p-type Semiconductor n-type Semiconductor

It is doped with trivalent impurity It is doped with pentavalent impurity

The number of holes is very much The number of free electrons is very
greater than the number of free electrons much greater than the number of holes
nh >> ne ne >> nh

Holes are majority charge carriers and Free electrons are majority charge carriers
free electrons are minority charge carriers and holes are minority charge carriers

There is a acceptor energy level just There is a donor energy level just below
above the valence band the conduction band
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19. Give reason why a p-type semiconductor is electrically neutral although nh >> ne.

Solution:

In p-type semiconductor, trivalent impurity is doped with tetravalent semiconductor

crystal. Both types of atoms (trivalent impurity atoms and tetravalent semiconductor

atoms) are electrically neutral. So p-type semiconductor is also electrically neutral.

20. Pure Si at 500 K has equal number of electron (ne) & hole (nh) concentrations of

1.5 x 1016 m–3. Doping by indium increases nh to 4.5 x 1022 m–3. Calculate the new

electron concentration of the doped semiconductor.

Solution:

ne x nh = n i2

n i2 (1.5 x 1016 ) 2 2.25 x 10 32 225 x 10 30

ne = = 22
= 22
= 21
= 5 x 109 m–3
nh 4.5 x 10 4.5 x 10 45 x 10