2SB1644

Transistors

Power Transistor (−80V, −4A)

2SB1644

!Features !External dimensions (Units : mm)

1) Low saturation voltage. 13.1
(Typ. VCE(sat) = −0.5V at IC / IB = −3A / −0.3A) 3.2

2) Excellent DC current gain characteristics.

(3) (2) (1)

2.54

10.1
5.08
1.24
0.78
!Absolute maximum ratings (Ta = 25°C) 8.8

1.3
0.4
1.3
Parameter Symbol Limits Unit

4.5
Collector-base voltage VCBO −80 V

0to0.3
Collector-emitter voltage VCEO −80 V 0.5Min.
Emitter-base voltage VEBO −5 V
−4 A (DC)
Collector current IC (1) Base
−6 ROHM : PSD3
Collector power dissipation
A (Pulse)
* EIAJ : SC-83A (2) Collector
PC 30 W (Tc = 25°C)
(3) Emitter
Junction temperature Tj 150 °C
Storage temperature Tstg −55~+150 °C

* Single pulse, Pw = 100ms

!Packaging specifications and hFE

Type 2SB1644
Package PSD3
hFE EF
Code T100
Basic ordering unit (pieces) 1000

!Electrical characteristics (Ta = 25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO −80 − − V IC = −50µA
Collector-emitter breakdown voltage BVCEO −60 − − V IC = −1mA
Emitter-base breakdown voltage BVEBO −5 − − V IE = −50µA
Collector cutoff current ICBO − − −10 µA VCB = −80V
Emitter cutoff current IEBO − − −10 µA VEB = −4V
Collector-emitter saturation voltage − − −1.5 V IC/IB = −3A/−0.3A
Base-emitter saturation voltage
VCE(sat)
− − −1.5 V IC/IB = −3A/−0.3A
*
DC current transfer ratio
VBE(sat)
100 − 320 − VCE/IC = −5V/−1A
*
hFE
Transition frequency fT − 12 − MHz VCE = −5V , IE = 0.5A , f = 5MHz
Output capacitance Cob − 100 − pF VCB = −10V , IE = 0A , f = 1MHz
*
* Measured using pulse current.