Professional Documents
Culture Documents
ST083S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
All diffused design 85A
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
'l(AV)
85 A
@Tc 85 °C
T(RMS)
135 A
@60Hz 2560 A
@60Hz 27 KA2s
tq range (*) 10 to 30
case style
MS
TO-209AC (TO-94)
T, -40 to 125 °C
(*) t = 10 to 20|js for 400 to 800V devices
tq = 15 to 30us for 1000 to 1200V devices
Quality Semi-Conductors
ST083S Series
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V DRM /V RRM' maximum VRSM, maximum WRRM™*-
Type number Code repetitive peak voltage non-repetitive peak voltage @ T.J = T.J max.
V V mA
04 400 500
08 800 900
ST083S 30
10 1000 1100
12 1200 1300
50Hz
Frequency
210
180°el '
'TM
120
'
r
330
\'»
270
'
2540
/ Y™ -\00\is
'
1930
_
Units
On-state Conduction
Parameter ST083S Units Conditions
'T(AV) Max. average on-state current 85 A 180° conduction, half sine wave
@ Case temperature 85 °C
19 t = 8.3ms reapplied
! 2 Vt Maximum ! 2 Vt for fusing 300 KA2Vs t = 0.1 to 10ms, no voltage reapplied
ST083S Series
On-state Conduction
Parameter ST083S Units Conditions
V TM Max. peak on-state voltage 2.15 ITM= 300A, Tj = Tj max, t = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
voltage 1.46 (16.7% x TC x IT(AV) < l< n x IT(AV)), Tj = Tj max.
V
V T(TO)2 High level value of threshold
1.52 (' > n x W' L = TJ max-
voltage
r (1 Low level value of forward
2.32 (16.7% x n x IT(AV) < l< jt x IT(AV)), Tj = Tj max.
slope resistance
mn
r (2 High level value of forward
2.34 ('* n x 'T(AV))' TJ = TJ max-
slope resistance
IH Maximum holding current 600 Tj = 25°C, I T > 30A
mA
IL Typical latching current 1000 Tj = 25°C, V A = 12V, Ra = 6£2, IG= 1A
Switching
Parameter ST083S Units Conditions
di/dt Max. non-repetitive rate of rise
1000 A/MS VTjmaX'VDRM=ratedVDRM
of turned-on current L. . = 2 x di/dt
I Tvl
td Typical delay time 0.80 V 25°C' VDM =rated VDRM' 'TM = 50A DC' 4p= 1 MS
Resistive load, Gate pulse: 10V, 5£1 source
us
Min Max Tj = Tj max, ITM = 100A, commutating di/dt = 10A/us
t Max. turn-off time (*) 10 30 VR = 50V, t = 200us, dv/dt: see table in device code
(*) t = 10 to 20us for 400 to 800V devices; t = 15 to 30us for 1000 to 1200V devices.
Blocking
Parameter ST083S Units Conditions
dv/dt Maximum critical rate of rise of Tj = Tj max., linear to 80% VDRM, higher value
500 V/ns
off-state voltage available on request
Lr,..
RRM
Max. peak reverse and off-state
L_.. leakage current 30 mA Tj = Tj max, rated V DRM /V RRM applied
UKM
Triggering
Parameter ST083S Units Conditions
PQM Maximum peak gate power 40
W T - T max f ~ 50Hz d% ~ 50
PG(AV) Maximum average gate power 5
Fast-on Terminals
AMP. 280000-1
REF-250
215(8.46)^ 10(0.39)
WHITE SHRINK
CERAMIC HOUSING
FLAG TERMINALS
22.5 DIA
5.2 (0.20) DIA
(0.30)