ST330CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 720 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AB (E-PUK) RoHS
COMPLIANT
• Lead (Pb)-free
• Designed and qualified for industrial level

TO-200AB (E-PUK) TYPICAL APPLICATIONS

• DC motor controls
PRODUCT SUMMARY • Controlled DC power supplies
IT(AV) 720 A • AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS
720 A
IT(AV)
Ths 55 °C
1420 A
IT(RMS)
Ths 25 °C
50 Hz 9000
ITSM A
60 Hz 9420
50 Hz 405
I2 t kA2s
60 Hz 370
VDRM/VRRM 400 to 1600 V
tq Typical 100 µs
TJ - 40 to 125 °C

ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM IDRM/IRRM MAXIMUM
VOLTAGE
TYPE NUMBER AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM
CODE
V V mA

04 400 500
08 800 900
ST330C..C 12 1200 1300 50
14 1400 1500
16 1600 1700

Document Number: 94407 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 1
ST330CPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 720 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current 180° conduction, half sine wave 720 (350) A
IT(AV)
at heatsink temperature double side (single side) cooled 55 (75) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 1420
t = 10 ms No voltage 9000
Maximum peak, one-cycle t = 8.3 ms reapplied 9420 A
ITSM
non-repetitive surge current t = 10 ms 100 % VRRM 7570
t = 8.3 ms reapplied Sinusoidal half wave, 7920
t = 10 ms No voltage initial TJ = TJ maximum 405
t = 8.3 ms reapplied 370
Maximum I2t for fusing I2 t kA2s
t = 10 ms 100 % VRRM 287
t = 8.3 ms reapplied 262
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2√s
Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91
V
High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.92
Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58
mΩ
High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.57
Maximum on-state voltage VTM Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V
Maximum holding current IH 600
TJ = 25 °C, anode supply 12 V resistive load mA
Typical latching current IL 1000

SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of Gate drive 20 V, 20 Ω, tr ≤ 1 µs
dI/dt 1000 A/µs
rise of turned-on current TJ = TJ maximum, anode voltage ≤ 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/µs
Typical delay time td 1.0
Vd = 0.67 % VDRM, TJ = 25 °C
µs
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
Typical turn-off time tq 100
VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs
off-state voltage
Maximum peak reverse and IRRM,
TJ = TJ maximum, rated VDRM/VRRM applied 50 mA
off-state leakage current IDRM

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94407

2 Revision: 11-Aug-08
 ST330CPbF Series
Phase Control Thyristors Vishay High Power Products
(Hockey PUK Version), 720 A

TRIGGERING
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp ≤ 5 ms 10.0
W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp ≤ 5 ms 3.0 A
Maximum peak positive gate voltage + VGM 20
TJ = TJ maximum, tp ≤ 5 ms V
Maximum peak negative gate voltage - VGM 5.0
TJ = - 40 °C 200 -
DC gate current required to trigger IGT TJ = 25 °C 100 200 mA
Maximum required gate trigger/
TJ = 125 °C current/voltage are the lowest 50 -
TJ = - 40 °C value which will trigger all units 2.5 -
12 V anode to cathode applied
DC gate voltage required to trigger VGT TJ = 25 °C 1.8 3.0 V
TJ = 125 °C 1.1 -
Maximum gate current/voltage
DC gate current not to trigger IGD not to trigger is the maximum 10 mA
TJ = TJ maximum value which will not trigger any
DC gate voltage not to trigger VGD unit with rated VDRM anode to 0.25 V
cathode applied

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction temperature range TJ - 40 to 125
°C
Maximum storage temperature range TStg - 40 to 150
DC operation single side cooled 0.09
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation double side cooled 0.04
K/W
DC operation single side cooled 0.02
Maximum thermal resistance, case to heatsink RthC-hs
DC operation double side cooled 0.01
9800 N
Mounting force, ± 10 %
(1000) (kg)
Approximate weight 83 g
Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

ΔRthJ-hs CONDUCTION
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
CONDUCTION ANGLE TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.012 0.011 0.008 0.007
120° 0.014 0.012 0.014 0.013
90° 0.017 0.015 0.019 0.017 TJ = TJ maximum K/W
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC

Document Number: 94407 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 3
ST330CPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 720 A

Maximum Allowable Heatsink Temperature (°C)

Maximum Allowable Heatsink Temperature (°C)

130 130
ST330C..C Series ST330C..C Series
120 (Double Side Cooled)
(Single Side Cooled)
120 RthJ-hs (DC) = 0.09 K/ W 110 RthJ-hs (DC) = 0.04 K/ W
100
110 90
80 Conduction Period
Conduction Angle
100 70 30°
60 60°
30°
90 60° 50 90°
90°
40 120°
120°
180°
80 180° 30
20 DC
70 10
0 50 100 150 200 250 300 350 400 0 200 400 600 800 1000 1200 1400 1600

Average On-state Current (A) Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Maximum Allowable Heatsink Temperature (°C)

Maximum Average On-state Power Loss (W)

130 1400
ST330C..C Series 180°
120 (Single Side Cooled)
1200 120°
110 R thJ-hs (DC) = 0.09 K/ W 90°
100 60°
1000 RMS Limit
30°
90
Conduction Period 800
80
70
600
60 Conduction Angle
50 400
40 60° ST330C..C Series
30° 90° 200
30 120° 180° TJ = 125°C
DC
20 0
0 100 200 300 400 500 600 700 800 900 0 100 200 300 400 500 600 700 800

Average On-state Current (A) Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics

Maximum Allowable Heatsink Temperature (°C)

Maximum Average On-state Power Loss (W)

130 1800
ST330C..C Series DC
120 (Double Side Cooled) 1600 180°
110 RthJ-hs (DC) = 0.04 K/ W 120°
1400 90°
100 60°
1200 30°
90
80 Conduction Angle 1000 RMSLimit
70 800
60 Conduction Period
600
50 30° 60°
90° 400
40 120° ST330C..C Series
180°
30 200 TJ = 125°C

20 0
0 200 400 600 800 1000 0 200 400 600 800 1000 1200

Average On-state Current (A) Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94407

4 Revision: 11-Aug-08
 ST330CPbF Series
Phase Control Thyristors Vishay High Power Products
(Hockey PUK Version), 720 A

8000 9000

Peak Half Sine Wave On-state Current (A)

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With Maximum Non Repetitive Surge Current
7500 Rated VRRM Applied Following Surge. 8500 Versus Pulse Train Duration. Control
Initial TJ = 125°C 8000 Of Conduc tion May Not Be Maintained.
7000 @60 Hz 0.0083 s Initial TJ = 125°C
@50 Hz 0.0100 s 7500
No Voltage Reapplied
6500 7000 Rated VRRM Reapplied
6000 6500

5500 6000
5500
5000
5000
4500
4500
ST330C..C Series ST330C..C Series
4000 4000
3500 3500
1 10 100 0.01 0.1 1
Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s)

Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled Single and Double Side Cooled

10000

TJ = 25°C
Instantaneous On-state Current (A)

TJ = 125°C

1000

ST330C..C Series

100
0 1 2 3 4 5 6 7
Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1
Transient Thermal Impedance Z thJ-hs (K/ W)

Steady State Value

RthJ-hs = 0.09 K/ W
(Single Side Cooled)
R thJ-hs = 0.04 K/ W
(Double Side Cooled)
(DC Operation)
0.01

ST330C..C Series

0.001
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance ZthJ-hs Characteristics

Document Number: 94407 For technical questions, contact: ind-modules@vishay.com www.vishay.com

Revision: 11-Aug-08 5
ST330CPbF Series
Vishay High Power Products Phase Control Thyristors
(Hockey PUK Version), 720 A

100
Rectangular gate pulse (1) PGM = 10W, tp = 4 ms
a) Recommended load line for (2) PGM = 20W, tp = 2 ms

Instantaneous Gate Voltage (V)

rated di/ dt : 20V, 10ohms; tr<=1 µs (3) PGM = 40W, tp = 1 ms
b) Recommended load line for (4) PGM = 60W, tp = 0.66 ms
<=30% rated di/ dt : 10V, 10ohms
10 tr<=1 µs (a)
(b)

Tj=-40 °C
Tj=25 °C
Tj=125 °C
1
(1) (2) (3) (4)
VGD
IGD
Device: ST330C..C Series Frequency Limited by PG(AV)
0.1
0.001 0.01 0.1 1 10 100
Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

ORDERING INFORMATION TABLE

Device code ST 33 0 C 16 C 1 - PbF

1 2 3 4 5 6 7 8 9

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic PUK
5 - Voltage code x 100 = VRRM (see Voltage Ratings table)
6 - C = PUK case TO-200AB (E-PUK)
7 - 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)
1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)
2 = Eyelet terminals (gate and auxiliary cathode soldered leads)
3 = Fast-on terminals (gate and auxiliary cathode soldered leads)
8 - Critical dV/dt: None = 500 V/µs (standard selection)
L = 1000 V/µs (special selection)
9 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94407

6 Revision: 11-Aug-08
 Outline Dimensions
Vishay Semiconductors

TO-200AB (E-PUK)

DIMENSIONS in millimeters (inches)

Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum

25.3 (0.99)
DIA. MAX.
0.3 (0.01) MIN.

14.1/15.1
(0.56/0.59)

0.3 (0.01) MIN.

25.3 (0.99) Gate terminal for
DIA. MAX. 1.47 (0.06) DIA.
pin receptacle

40.5 (1.59) DIA. MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

6.5 (0.26)

4.75 (0.19)

25° ± 5°

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95075 For technical questions, contact: indmodules@vishay.com www.vishay.com

Revision: 01-Aug-07 1
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